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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Controlled removal of hydrogen atoms from H-terminated silicon surfaces

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2x1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

42 ENGINEERING↗
DOE OSTI2021

Chemical and structural characterization of EUV photoresists as a function of depth by standing-wave x-ray photoelectron spectroscopy

The success in the miniaturization of the electronic device constituents depends mostly on the photolithographic techniques. Recently, to achieve patterning at the sub-10-nm node, extreme ultraviolet (EUV) lithography has been introduced into high volume production. Continued scaling of EUV via increased numerical aperture to achieve nodes at 3-nm and below requires the development of fundamentally new patterning materials and new characterization methods. Current EUV-resist film thicknesses are in the 20- to 40-nm range, and further thickness reduction is required for the next generation. Therefore, interfaces become exceedingly important, and the properties of the resist film would be dominated by top and bottom interfacial effects. X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation (SW-XPS), a fairly new method in the EUV lithography field, previously had been largely applied in multilayers and superlattices for characterizing the composition and electronic structure of buried layers and interfaces as a function of depth. We applied the SW-XPS method to organic/inorganic photoresists to provide depth-selective information on their structural and chemical conditions of as a function of temperature, EUV exposure, different underlayers, and other fundamental parameters. As a first attempt, we perform an SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to an electron beam. By SW-XPS, we determined that the interface between the Al 2 O 3 underlayer and the SAMs is smooth, with a mean roughness of about 0.2 nm. Moreover, we determined that the SAM chains are, on average, tilted by 1/430 deg off the sample normal. The SW-XPS results also suggest that the SAM is not a perfectly aligned and uniform monolayer, with some areas having thickness higher than a single monolayer. We demonstrated that SW-XPS can provide useful information on ultrathin materials with high potential for being used as a characterization method of organic/inorganic photoresists.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Infrared nanospectroscopy characterization of metal oxide photoresists

Implementation of extreme ultraviolet (EUV) lithography in high-volume semiconductor manufacturing requires a reliable and scalable EUV resist platform. A mechanistic understanding of the pros and cons of different EUV resist materials is critically important. However, most material characterization methods with nanometer resolution use an x-ray photon or electron beam as the probe, which often cause damage to the photoresist film during measurement. Here, we illustrated the use of non-destructive infrared nanospectroscopy [or nano-Fourier-Transform infrared spectroscopy (nano-FTIR)] to obtain spatially resolved composition information in patterned photoresist films. Further, clear evidence of exposure-induced chemical modification was observed at a spatial resolution down to 40 nm, well below the diffraction limit of infrared light. With improvements, such a nano-FTIR technique with nanoscale spatial resolution, chemical sensitivity, and minimal radiation damage can be a promising candidate for the fundamental study of material properties relevant to EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hybrid chemical characterization of latent images in EUV resist with 12 nm half-pitch features

With the advancement of high numerical aperture extreme ultraviolet (EUV) lithography, the new platform will enable chipmakers to achieve critical dimensions of 8 nm. However, resist materials face significant challenges in delivering increased sensitivity while managing rising stochastic variations. We aim to develop comprehensive techniques to characterize the chemical profile of latent images, stored in EUV resists after exposure and postexposure baking, which is essential for understanding the origin of stochastic effects. Infrared photo-induced force microscopy (IR PiFM) is a bimodal atomic force microscopy technique combined with an infrared light source, allowing for simultaneous sub-5 nm topographic and chemical characterization within a localized environment. Critical-dimension resonant soft X-ray scatterometry (CD-RSoXS) provides statistical data that reveal structural and chemical information for comparative analysis. For the first time, IR PiFM has been used to chemically map the latent images of EUV resists (after exposure and postexposure baking) at a record high resolution of 12 nm half-pitch, enabling nondestructive analysis of patterns prior to development. Furthermore, CD-RSoXS offers direct experimental observation and comparison of exposed, postexposure baked, and developed patterns, which align with the IR PiFM results. We demonstrate that the IR PiFM technique offers valuable insights into both high spatial resolution and local chemical information simultaneously. In addition, CD-RSoXS provides statistical results that support our main findings. This hybrid metrology approach leverages a multifaceted dataset by combining the most reliable information from each source, which is essential for a comprehensive understanding of the stochastic effects in EUV lithography processes.

O’Reilly, Padraic↗
DOE OSTI2025

Inspection of next-generation EUV resists with nano-projectile secondary ion mass spectrometry

There is a rapidly growing need for new materials for extreme ultraviolet (EUV) lithography, which incorporate high EUV absorbing elements. Hybrid resists, which are a combination of inorganic and organic moieties, are promising as they offer both high EUV sensitivity and high etch resistance. However, there is a glaring lack of methods to examine the uniformity of these important materials at the nanoscale. We examine the capabilities of nano-projectile secondary ion mass spectrometry (NP-SIMS) to investigate hybrid resists. NP-SIMS is a mass spectrometry-based technique with high lateral resolution. Using NP-SIMS, a surface is probed stochastically with a suite of individual projectiles, 10 6 to 10 7 in total, separated in time and space. Examining these individual mass spectra allows for nanoscale investigation of the uniformity of the surface. We evaluated the performance of NP-SIMS using samples of poly(methyl methacrylate) (PMMA) infiltrated with varying amounts of InO x via vapor-phase infiltration (VPI), an organic–inorganic hybridization method derived from atomic layer deposition. Here, we found that NP-SIMS measurements contained abundant characteristic ions related to both the PMMA and infiltrated In. The intensity of In atomic ions increased linearly with the number of infiltration cycles; however, the uniformity of In and PMMA varied with the number of infiltration cycles. After one cycle, we found that both the PMMA and In were relatively inhomogeneous. The homogeneity improved with subsequent infiltration cycles. In addition, NP-SIMS measurements contained characteristic ions related to the infiltration reaction and provided insights into the VPI mechanism. Overall, the results show that NP-SIMS is capable of examining both the inorganic and organic moieties in a hybrid resist and will be an important method for understanding the performance of these materials for use in EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗
DOE OSTI2020

SBV: Characterization of Highly Reflective EUV Coatings (CRADA AWD00002394)

The overall goals were to support the development of new high efficiency EUV coatings which would dramatically reduce the energy needed in the semiconductor manufacturing lithography process as well as dramatically reducing the cost of future EUV lithography tools. The project was successful in the characterization of numerous samples generating many hundreds of datasets and critical feedback for the partner’s internal material development program.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Rapid Fabrication of High Frame Rate Multichannel FTIR Spectrometers

Spectrally resolved signals in the short- to mid-wave infrared (SWIR/MWIR) bands at high-temporal resolution are critical for many national security remote sensing missions. Currently available off the shelf technology can achieve either high temporal resolution or high spectral resolution, but rugged instruments that can achieve both simultaneously remain mostly in the realm of one-off R&D projects. This report documents efforts to demonstrate a new technique for designing and building high resolution, high framerate multichannel FTIR (MC-FTIR) spectrometers that operate in the SWIR/MWIR bands. The core optical element in a MC-FTIR spectrometer is an array of statically-tuned lamellar grating interferometers (LGI). In the original MC-FTIR work these arrays were fabricated using a synchrotron x-ray lithography method. We proposed to instead fabricate these LGI arrays using multiphoton lithography (MPL), a 3D printing technique that can fabricate meso-scale structures with sub-micron precision. Although we were able to fabricate LGI arrays of sufficient size using MPL, the realized optical surfaces had unsuitably high optical form errors, precluding their use in a fieldable instrument. Further advancement in MPL technology may eventually enable fabrication of interferometer-grade LGI arrays.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Gold Ion Beam Milled Gold Zero-Mode Waveguides

Zero-mode waveguides (ZMWs) are widely used in single molecule fluorescence microscopy for their enhancement of emitted light and the ability to study samples at physiological concentrations. ZMWs are typically produced using photo or electron beam lithography. We report a new method of ZMW production using focused ion beam (FIB) milling with gold ions. We demonstrate that ion-milled gold ZMWs with 200 nm apertures exhibit similar plasmon-enhanced fluorescence seen with ZMWs fabricated with traditional techniques such as electron beam lithography.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Patterning of dispenser cathode surfaces to a controlled porosity

A process to pattern slots approximately 1.25 microns in width into 25-micron-thick W films that have been deposited onto flat or concave surfaces is discussed. A 25-micron-thick W film with a high degree of (100) orientation is chemically vapor deposited (CVD) onto a flat or concave Mo mandrel. A 5-micron-thick Al film is deposited onto the CVD W, followed by 2 microns of photoresist. On concave cathodes, XeCl2 laser ablation or X-ray lithography is used to pattern the photoresist, whereas on flat cathodes deep UV lithography can be used. The patterned photoresist serves as the mask in a Cl ion-beam-assisted etching (IBAE) process to pattern the Al. An alternative process is to deposit Al2O3 films onto the W and pattern the Al2O3 using laser ablation. The W film is then patterned to 3-6-micron slot widths using IBAE + ClF3 with the patterned Al or Al2O3 as the mask. Finally, a sputter deposition step is required to close up the slots to approximately 1 micron. The process described is capable of patterning concave dispenser cathodes to a controlled and precise porosity.

Garner, Charles E.↗
NASA NTRS1990

X-ray/VUV transmission gratings for astrophysical and laboratory applications

This paper describes the techniques used to fabricate deep-submicron-period transmission gratings for astrophysical and laboratory applications, with special attention given to the major steps involved in the transmission grating fabrication. These include the holographic lithography procedure used to pattern the master transmission grating, the fabrication of X-ray mask, the X-ray lithography step used to transfer the X-ray mask pattern into a substrate, and the electroplating of the substrate to form the final grating pattern. The various ways in which transmission gratings can be used in X-ray and VUV spectroscopy are discussed together with some examples of experiments reported in the literature.

Schattenburg, M. L.↗
NASA NTRS1992

Rapid Prototyping Of Layered Composite Parts

Numerically controlled cutting accelerates fabrication of layers. Proposed method derived from stereoscopic lithography. CATIA or CAEDS computer program used to generate three-dimensional mathematical model of prototype part. In model, geometry of part specified in layers, as in stereoscopic lithography. Model data for each layer fed to computer-numerically-controlled ultrasonic cutting machine. Sheet of prepreg (uncured composite material) of specified layer thickness placed in machine and cut, under control of model data, to specified shape of layer.

Wolff, Edwin D.↗
NASA NTRS1992

An anti-reflection coating for use with PMMA at 193 nm

An antireflection coating (ARC) for use with poly(methyl methacrylate) (PMMA) resist for ArF excimer laser lithography (193 nm) was formulated. It consists of PMMA and a bis-azide, 4.4-prime-diazidodiphenyl sulfone (DDS) which crosslinks the film after deep UV (260 nm) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. The effectiveness of the ARC was demonstrated by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period (about 50 nm linewidth) that are almost entirely free of an orthogonal standing wave.

Yen, Anthony↗
NASA NTRS1992

Slot antenna SIS mixers for submillimeter wavelengths

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Zmuidzinas, Jonas↗
NASA NTRS1995

Continuous phase and amplitude holographic elements

A method for producing a phase hologram using e-beam lithography provides n-ary levels of phase and amplitude by first producing an amplitude hologram on a transparent substrate by e-beam exposure of a resist over a film of metal by exposing n is less than or equal to m x m spots of an array of spots for each pixel, where the spots are randomly selected in proportion to the amplitude assigned to each pixel, and then after developing and etching the metal film producing a phase hologram by e-beam lithography using a low contrast resist, such as PMMA, and n-ary levels of low doses less than approximately 200 micro-C/sq cm and preferably in the range of 20-200 micro-C/sq cm, and aggressive development using pure acetone for an empirically determined time (about 6 s) controlled to within 1/10 s to produce partial development of each pixel in proportion to the n-ary level of dose assigned to it.

Maker, Paul D.↗