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At least 163 records · Page 9

Aqua/Aura Updated Inclination Adjust Maneuver Performance Prediction Model

This presentation will discuss the updated Inclination Adjust Maneuver (IAM) performance prediction model that was developed for Aqua and Aura following the 2017 IAM series. This updated model uses statistical regression methods to identify potential long-term trends in maneuver parameters, yielding improved predictions when re-planning past maneuvers. The presentation has been reviewed and approved by Eric Moyer, ESMO Deputy Project Manager.

adjust↗

Effect of magnetic field inclination on black hole jet power and particle acceleration

Rotating black holes are known to launch relativistic jets and accelerate particles if they accrete a magnetized plasma. It remains unclear, however, how the global magnetic field orientation affects the jet powering efficiency. We propose the first kinetic study of a collisionless plasma around a Kerr black hole embedded in a magnetic field that is inclined with respect to the black hole spin axis. Using three-dimensional general relativistic particle-in-cell simulations, we show that while oblique magnetic field configurations significantly reduce the jet power, particle acceleration still remains highly efficient. This suggests that black holes producing a weak jet might still be bright sources of nonthermal radiation and cosmic rays.

acceleration of particles↗

Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spontaneous formation of highly periodic nano-ripples in inclined deposition of Mo/Si multilayers

We investigated the growth of Mo/Si multilayers (ML) deposited using a highly collimated flux of ion-beam sputtered particles for a wide range of deposition angles. Growth of the multilayers at normal and moderately inclined deposition is dominated by surface relaxation resulting in smooth interfaces of the multilayer stack. The first signs of interface roughening are observed at a deposition angle of 45° with respect to the normal to the substrate surface. At an oblique angle of 55°, the ML interfaces undergo fast progressive roughening from the substrate to the top of the ML stack, leading to the formation of ripples which are perpendicular to the deposition flux direction. Deposition of the multilayer at an angle of 65° results in a highly periodic lateral ripple structure with a period of 10 nm. The mature ripple pattern forms during growth of only the first few layers and then stabilizes. The ripples propagate through the whole ML stack with almost no changes in frequency and amplitude, resulting in a highly periodic bulk array composed of silicon and molybdenum nano-rods closely packed in a 6-fold symmetric lattice. Here, we present a simple model for the ripple growth, which gives results that are in good agreement with experimental data.

36 MATERIALS SCIENCE↗

Evolution of the magnetic field inclination in a forming penumbra

We describe the evolution of the magnetic and velocity fields in the annular zone around a pore a few hours before the formation of its penumbra. We detected the presence of several patches at the edge of the annular zone, with a typical size of about 1''. These patches are characterized by a rather vertical magnetic field with polarity opposite to that of the pore. They correspond to regions of plasma upflow up to 2.5 km s{sup –1} and are characterized by radially outward displacements with horizontal velocities up to 2 km s{sup –1}. We interpret these features as portions of the pore magnetic field lines returning beneath the photosphere being progressively stretched and pushed down by the overlying magnetic fields. Our results confirm that the penumbra formation results from changes in the inclination of the field lines in the magnetic canopy overlying the pore, until they reach the photosphere.

79 ASTRONOMY AND ASTROPHYSICS↗

Reverse segregation and self-organization in inclined chute flows of bidisperse granular mixtures

In the usual segregation scenario for stable inclined chute flows of bidisperse mixtures of fine and coarse spherical particles, coarse particles rise toward the free surface, forming a coarse-rich region atop the flowing pile. Beyond a threshold coarse-to-fine diameter ratio of approximately 4, conversely, the weight of the coarse particles exceeds the segregation driving forces, causing individual coarse particles to sink within the pile and producing a reversed segregation state. However, an understanding of the collective evolution of the pile structure is still lacking when the particle diameter ratio exceeds 4 and the coarse-particle mass fraction is appreciable. To explore this broadly bidisperse limit, we perform discrete element method simulations considering mean particle diameter ratios of up to 8 and coarse-particle mass fractions spanning 0.1 to 0.9. The steady-state flow profiles reveal several intriguing behaviors that depend on the diameter ratio and mass fraction. These include a previously identified transition from usual to reverse segregation and a newfound tendency to self-organize into alternating coarse- and fine-rich particle layers stacked along the shear gradient direction, with layer thickness dictated by the coarse-particle diameter. A fuller understanding of segregation at this scale could pave the way for enhanced mixing or demixing techniques at the commercial scale.

granular flow↗

First results from the spectral DCT trigger implemented in the Cyclone V Front-End Board used for a detection of very inclined showers in the Pierre Auger surface detector Engineering Array

The paper presents the first results from the trigger based on the Discrete Cosine Transform (DCT) operating in the new Front-End Boards with Cyclone V FPGA deployed in 8 test surface detectors in the Pierre Auger Engineering Array. The patterns of the ADC traces generated by very inclined showers were obtained from the Auger database and from the CORSIKA simulation package supported next by Offline reconstruction Auger platform which gives a predicted digitized signal profiles. Simulations for many variants of the initial angle of shower, initialization depth in the atmosphere, type of particle and its initial energy gave a boundary of the DCT coefficients used next for the on-line pattern recognition in the FPGA. Preliminary results have proven a right approach. We registered several showers triggered by the DCT for 120 MSps and 160 MSps. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Anisotropic Terahertz Emission from Bi 2 Se 3 Thin Films with Inclined Crystal Planes

We investigate the surface states of topological insulator (TI) Bi 2 Se 3 thin films grown on Si nanocrystals and Al 2 O 3 substrates by using terahertz (THz) emission spectroscopy. Compared to bulk crystalline Bi 2 Te 2 Se, film TIs exhibit distinct behaviors in the phase and amplitude of emitted THz radiation. In particular, Bi 2 Se 3 grown on Al 2 O 3 shows an anisotropic response with a strong modulation of the THz signal in its phase. From x-ray diffraction, we find that the crystal plane of the Bi 2 Se 3 films is inclined with respect to the plane of the Al 2 O 3 substrate by about 0.27°. This structural anisotropy affects the dynamics of photocarriers and hence leads to the observed anisotropic response in the THz emission. Such relevance demonstrates that THz emission spectroscopy can be a sensitive tool to investigate the fine details of the surface crystallography and electrostatics of thin film TIs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗