Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “HIGH”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Development and operation of a high-throughput accurate-wavelength lens-based spectrometer

A high-throughput spectrometer for the 400–820 nm wavelength range has been developed for charge exchange recombination spectroscopy or general spectroscopy. A large 2160 mm{sup −1} grating is matched with fast f/1.8 200 mm lenses, which provide stigmatic imaging. A precision optical encoder measures the grating angle with an accuracy ≤0.075 arc sec. A high quantum efficiency low-etaloning CCD detector allows operation at longer wavelengths. A patch panel allows input fibers to interface with interchangeable fiber holders that attach to a kinematic mount at the entrance slit. Computer-controlled hardware allows automated control of wavelength, timing, f-number, automated data collection, and wavelength calibration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The structure of liquid water up to 360 MPa from x-ray diffraction measurements using a high Q-range and from molecular simulation

X-ray diffraction measurements of liquid water are reported at pressures up to 360 MPa corresponding to a density of 0.0373 molecules per Å{sup 3}. The measurements were conducted at a spatial resolution corresponding to Q{sub max} = 16 Å{sup −1}. The method of data analysis and measurement in this study follows the earlier benchmark results reported for water under ambient conditions having a density of 0.0333 molecules per Å{sup 3} and Q{sub max} = 20 Å{sup −1} [J. Chem. Phys. 138, 074506 (2013)] and at 70 °C having a density of 0.0327 molecules per Å{sup 3} and Q{sub max} = 20 Å{sup −1} [J. Chem. Phys. 141, 214507 (2014)]. The structure of water is very different at these three different T and P state points and thus they provide the basis for evaluating the fidelity of molecular simulation. Measurements show that at 360 MPa, the 4 waters residing in the region between 2.3 and 3 Å are nearly unchanged: the peak position, shape, and coordination number are nearly identical to their values under ambient conditions. However, in the region above 3 Å, large structural changes occur with the collapse of the well-defined 2nd shell and shifting of higher shells to shorter distances. The measured structure is compared to simulated structure using intermolecular potentials described by both first-principles methods (revPBE-D3) and classical potentials (TIP4P/2005, MB-pol, and mW). The DFT-based, revPBE-D3, method and the many-body empirical potential model, MB-pol, provide the best overall representation of the ambient, high-temperature, and high-pressure data. The revPBE-D3, MB-pol, and the TIP4P/2005 models capture the densification mechanism, whereby the non-bonded 5th nearest neighbor molecule, which partially encroaches the 1st shell at ambient pressure, is pushed further into the local tetrahedral arrangement at higher pressures by the more distant molecules filling the void space in the network between the 1st and 2nd shells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Potassic, High-Silica Hadean Crust.

Understanding Hadean(>4 Ga) Earth requires knowledge of its crust. The composition of the crust and volatiles migrating through it directly influence the makeup of the atmosphere, the composition of seawater, and nutrient availability. Despite its importance, there is little known and less agreed upon regarding the nature of the Hadean crust. By analyzing the Sr-87/Sr-86 ratio of apatite inclusions in Archean zircons from Nuvvuagittuq, Canada, we show that its protolith had formed a high (>1) Rb/Sr ratio reservoir by at least 4.2 Ga. This result implies that the early crust had a broad range of igneous rocks, extending from mafic to highly silicic compositions

early Earth↗
DOE OSTI2023

Grid Strength Assessment for High Levels of Inverter-based Resources in the Puerto Rico Power

A system-wide assessment of the Puerto Rico power system grid strength is studied when considering high levels of inverter-based resource penetration. This study is carried out in PSSE and assesses the impact of inverter-based resource (IBR) contributions in response to three-phase ground faults. A hypothetical 100% inverter-based generation scenario is created to assess the extreme impact on short circuit levels and a realistic scenario is considered to assess the impact to short circuit ratios. The overall conclusion is that short circuit capacity and current will drastically decrease in a high IBR scenario, an effect that is quantified in this paper. The short circuit ratio metric is typically used to assess the impact of IBR but generally overestimates grid strength due to not accounting for the impact from multiple IBRs. Other methods such as equivalent circuit based short circuit ratio and weighted short circuit ratio offer a more comprehensive consideration for multiple IBRs and can better account for their mutual interactions. The work presented in this paper is part of the PR100 study.

inverter based resources, PR100, grid strength↗
DOE OSTI2011

Structural Changes of (KGd)2Ta2O7 Pyrochlore at High Pressure

The structure of K-bearing tantalate pyrochlore (K{sub 2-x}Gd{sub x})Ta{sub 2}O{sub 6+x}(x {approx} 0.4) was studied at high pressures using in situ X-ray diffraction and Raman scattering methods. Experimental results indicated that (K{sub 2-x}Gd{sub x})Ta{sub 2}O{sub 6+x}(x {approx} 0.4) retains the pyrochlore structure up to 40 GPa, but partial amorphization occurred at pressures above 23 GPa. The amorphous phase was also confirmed in the quenched sample by means of transmission electron microscopy. The tantalate pyrochlore lattice is more stable than pyrochlore compounds in other systems, such as rare earth titanates, zirconates and stannates. The structural stability of pyrochlore tantalate may be mainly related to the size ratio of cations on the 16d and 16c sites in the lattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passivation, gate and ohmic contacts so that the device surface can be examined by SEM and AFM. We have found prominent pits and trenches that have formed under the gate edge on the drain side of the device. The width and depth of the pits under the gate edge correlate with the degree of drain current degradation. In addition, we also found visible erosion under the full extent of the gate. The depth of the eroded region averaged along the gate width under the gate correlated with channel resistance degradation. Both electrical and structural analysis results indicate that device degradation under high-power DC conditions is of a similar nature as in better understood high-voltage OFF-state conditions. The recognition of a unified degradation mechanism provides impetus to the development of a degradation model with lifetime predictive capabilities for a broad range of operating conditions spanning from OFF-state to ON-state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Evolution of sputtered tungsten coatings at high temperature

Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Characterization of local hydride re-orientation in high burn-up PWR fuel rods induced by high pressure at high temperatures

Hydride re-orientation in high burn-up PWR fuel rods was induced by high pressure at high temperatures. The high-burnup specimens were sectioned from PWR rods taken from a 15×15 assembly of the H.B. Robinson (HBR) Unit 2 reactor. Out-of cell benchmark tests performed on unirradiated hydrided Zircaloy-4 specimens were conducted to determine the appropriate temperature, pressure, cooling rate, and number of cooling cycles for the reorientation of the irradiated in-cell specimens. The in-cell hydride reorientation tests were performed using high-burnup fuel specimens under a hoop stress ≈145 MPa at 400°C. The specimens were heated to the target temperature of 400°C, held for 3 hours, cooled at 1°C/min to 170°C,and then heated at 1°C/min to the target temperature again for five cycles. Post test metallographic examinations showed that a significant amount of radial hydrides were induced in the HBR fuel rods. The length of radial hydride was up to 60 μm. For unirradiated materials, the ductility of the radial hydride treated specimens is significantly reduced as compared to the as-hydrided specimens having the same hydrogen concentration (≈300 wppm in this work). The mechanical testing on irradiated fueled samples with hydride reorientation experiments have been performed, and will be reported separately in the near future.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Oxidation of High Yield Strength Metals Tungsten and Rhenium in High-Pressure High-Temperature Experiments of Carbon Dioxide and Carbonates

The laser-heating diamond-anvil cell technique enables direct investigations of materials under high pressures and temperatures, usually confining the samples with high yield strength W and Re gaskets. This work presents experimental data that evidences the chemical reactivity between these refractory metals and CO 2 or carbonates at temperatures above 1300 °C and pressures above 6 GPa. Metal oxides and diamond are identified as reaction products. Recommendations to minimize non-desired chemical reactions in high-pressure high-temperature experiments are given.

36 MATERIALS SCIENCE↗