Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co 1 / 3 NbS 2
Not Available
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
SEARCH · Engineering Papers
Results for “HALL EFFECT”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Tunable topological Hall effects in noncollinear antiferromagnet Mn 3 Sn/Pt bilayers
Noncollinear antiferromagnet Mn3Sn has attracted wide interest as it is a candidate for Weyl semimetal. Here, we report the observation of topological Hall like signals in Mn3Sn/Pt bilayers grown on Al 2 O 3 (0001). X-ray diffraction and scanning transmission electron microscopy results confirm the high epitaxial quality of the c-axis-oriented Mn3Sn films. The detected topological Hall resistivity shows a broad temperature range from 210 to 365 K by tuning the thickness of Mn3Sn from 3 to 15 nm. Compared with previously reported topological Hall effects in Mn3Sn at temperatures below 50 K, the observed high-temperature topological Hall signal is likely due to the stabilization of topological spin textures enabled by the strong spin–orbit coupling of the Pt overlayer and the Dzyaloshinskii–Moriya interaction at the Mn3Sn/Pt interface.
36 MATERIALS SCIENCE↗
Bulk dissipation in the quantum anomalous Hall effect
Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures
36 MATERIALS SCIENCE↗
Large anomalous Hall effect induced by weak ferromagnetism in the noncentrosymmetric antiferromagnet CoNb 3 S 6
We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet CoNb 3 S 6 by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of CoNb 3 S 6 and its family compounds (FeNb 3 S 6 and CoNb 3 S 6 ), we find a band dispersion unique to the Co intercalation existing near the Fermi level. We further demonstrate that a slight deficiency of sulfur in CoNb 3 S 6 eliminates the ferromagnetism and the AHE simultaneously while hardly changing the band structure, indicating that the weak ferromagnetism is responsible for the emergence of the large AHE. Based on our results, we propose Weyl points near the Fermi level to cause the large AHE.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb 2
Spin-valley locking in monolayer transition metal dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a Dirac semimetal BaMnSb 2 . This is revealed by comprehensive studies using first principles calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy measurements. Moreover, this material also exhibits a stacked quantum Hall effect (QHE). The spin-valley degeneracy extracted from the QHE is close to 2. This result, together with the Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we also observed a plateau in the z-axis resistance, suggestive of a two-dimensional chiral surface state present in the quantum Hall state. These findings establish BaMnSb 2 as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
36 MATERIALS SCIENCE↗
The quantum Hall effect in the absence of disorder
Abstract It is widely held that disorder is essential to the existence of a finite interval of magnetic field in which the Hall conductance is quantized, i.e., for the existence of “plateaus” in the quantum Hall effect. Here, we show that the existence of a quasi-particle Wigner crystal (QPWC) results in the persistence of plateaus of finite extent even in the limit of vanishing disorder. Several experimentally detectable features that characterize the behavior in the zero disorder limit are also explored.
36 MATERIALS SCIENCE↗
Topological monopole's gauge field‐induced anomalous Hall effect in artificial honeycomb lattice
Abstract Vortex magnetic structure in artificial honeycomb lattice provides a unique platform to explore emergent properties due to the additional Berry phase curvature imparted by chiral magnetization to circulating electrons via direct interaction. We argue that while the perpendicularly aligned magnetic component leads to the quantized flux of monopole at the center of the Berry sphere, the in‐plane vortex circulation of magnetization gives rise to unexpected nontrivial topological Berry phase due to the gauge field transformation. The unprecedented effect signifies the importance of vector potential in multiply connected geometrical systems. Experimental confirmations to proposed hypotheses are obtained from Hall resistance measurements on permalloy honeycomb lattice. Investigation of the topological gauge transformation due to the in‐plane chirality reveals anomalous quasi‐oscillatory behavior in Hall resistance as a function of perpendicular field. The oscillatory nature of is owed to the fluctuation in equilibrium current as a function of Fermi wave‐vector , envisaged under the proposed new formulation in this article. Our synergistic approach suggests that artificially tunable nanostructured material provides new vista to the exploration of topological phenomena of strong fundamental importance. Key Points Demonstration of gauge field flux due to vortex magnetism. Anomalous Hall effect in magnetic honeycomb lattice. Topological monopole‐induced magnetic flux.
Guo, Jiasen↗
3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness
Magnetic topological states refer to a class of exotic phases in magnetic materials with the non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10 nm. Here, molecular beam epitaxy (MBE) is employed to synthesize magnetic TI trilayers with a thickness of up to ≈106 nm. It is found that these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying the magnetic dopants, gate voltages, temperature, and external magnetic fields, the properties of these thick QAH insulators are examined and the robustness of the 3D QAH effect is demonstrated. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of the thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.
36 MATERIALS SCIENCE↗
Hall effect in LaCrGe 3 at pressures up to 24 kbar and a 𝐻−𝑇 phase diagram of the pressure-induced magnetic phase
LaCrGe 3 is a metallic, itinerant ferromagnet with 𝑇 𝐶 ≈ 86K and an easy magnetic direction along its hexagonal 𝑐 axis. Here we present studies of the 𝐻 ∥ 𝑐 Hall effect in LaCrGe 3 at ambient pressure and under pressures up to 24 kbar. At ambient pressure the anomalous Hall conductivity in the ferromagnetic state reaches a large value of ∼520 Ω − 1 cm −1 . The overall data are consistent with the behavior expected for a ferromagnet with magnetic field applied along its easy axis. Measurements under pressure yield an 𝐻 = 0, 𝑃−𝑇 phase diagram consistent with earlier publications with 𝑇 𝐶 being suppressed with pressure and nonferromagnetic phases appearing for 𝑃 >15 kbar. The data suggest that the observed 𝑇 𝐶 suppression is due to the pressure-dependent exchange interactions rather than suppression of the size of the magnetic moment. Field-dependent Hall resistivity in the higher-pressure, nonferromagnetic state is consistent with the net moment being zero for 𝐻=0. In a finite field there is a sharp anomaly comparable to the one associated with a spin-flip metamagnetic transition. The 𝐻−𝑇 phase diagrams corresponding to a pressure-induced magnetic phase are constructed for several pressures. In conclusion, the Hall data suggest the possibility of the pressure-induced nonferromagnetic phase being a combination of multiple small regions of antiferromagnetic phases with different wave vectors.
Bud'ko, Sergey L. [Ames Laboratory, and Iowa State↗
Distinct Composition‐Dependent Topological Hall Effect in Mn 2‐x Zn x Sb
Abstract Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect (THE), a key component in spintronics, has gained significance due to emerging theories surrounding noncoplanar chiral spin textures. This study focuses on Mn 2‐x Zn x Sb, a material crystalizing in centrosymmetric space group with rich magnetic phases tunable by Zn contents. Through comprehensive magnetic and transport characterizations, we found that the high‐Zn ( x > 0.6) samples display THE which is enhanced with decreasing temperature, while THE in the low‐Zn ( x < 0.6) samples show an opposite trend. The coexistence of those distinct temperature dependencies for THE suggests very different magnetic interactions/structures for different compositions and underscores the strong coupling between magnetism and transport in Mn 2‐x Zn x Sb. The findings contribute to understanding topological magnetism in centrosymmetric tetragonal lattices, establishing Mn 2‐x Zn x Sb as a unique platform for exploring tunable transport effects and opening avenues for further exploration in the realm of spintronics.
Nabi, Md Rafique Un↗
Room-temperature terahertz anomalous Hall effect in Weyl antiferromagnet Mn 3 Sn thin films
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however, their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn 3 Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn 3 Sn thin films is investigated by polarization-resolved spectroscopy. Large anomalous Hall conductivity Re σxyð Þ ω 20 Ω1cm1 at THz frequencies is clearly observed as polarization rotation. A peculiar temperature dependence corresponding to the breaking/recovery of symmetry in the spin texture is also discussed. Observation of the THz AHE at room temperature demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn3Sn, and will also open new avenue for studying nonequilibrium dynamics in Weyl antiferromagnets.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Investigation of topologically trivial and non-trivial spin textures and their relationships with the topological Hall effect
This proposal has two main goals: (1) to investigate ways to create a variety of spin textures, both topologically trivial and non-trivial, and (2) to establish the relationships between the created spin textures and the topological Hall effect (THE) signal. The approach is achieved by utilizing the van der Waals (vdW) two-dimensional (2D) magnetic materials, such as CrX 3 (X=I, Br, and Cl) and Fe 3 GeTe 2 , transferred onto various substrates with different interactions to create a wide range of spin textures; and utilize Spin helical system, such as Eu metal, and the impact of the thickness.
36 MATERIALS SCIENCE↗
Visualizing the strongly reshaped skyrmion Hall effect in multilayer wire devices
Magnetic skyrmions are nanoscale spin textures touted as next-generation computing elements. When subjected to lateral currents, skyrmions move at considerable speeds. Their topological charge results in an additional transverse deflection known as the skyrmion Hall effect (SkHE). While promising, their dynamic phenomenology with current, skyrmion size, geometric effects and disorder remain to be established. Here we report on the ensemble dynamics of individual skyrmions forming dense arrays in Pt/Co/MgO wires by examining over 20,000 instances of motion across currents and fields. The skyrmion speed reaches 24 m/s in the plastic flow regime and is surprisingly robust to positional and size variations. Meanwhile, the SkHE saturates at ~22 ° , is substantially reshaped by the wire edge, and crucially increases weakly with skyrmion size. Particle model simulations suggest that the SkHE size dependence - contrary to analytical predictions - arises from the interplay of intrinsic and pinning-driven effects. These results establish a robust framework to harness SkHE and achieve high-throughput skyrmion motion in wire devices.
36 MATERIALS SCIENCE↗
Anomalous Hall effect and perpendicular magnetic anisotropy in ultrathin ferrimagnetic NiCo2O4 films
The inverse spinel ferrimagnetic NiCo2O4 possesses high magnetic Curie temperature TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo2O4 thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo2O4 films on MgAl2O4 substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while TC for 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity (σxy) and its scaling relation with the longitudinal conductivity (σxx) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo2O4.
Chen, Xuegang↗
Topological response of the anomalous Hall effect in MnBi 2 Te 4 due to magnetic canting
Three-dimensional (3D) compensated MnBi 2 Te 4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi 2 Te 4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi 2 Te 4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings bring to light a topological anomalous Hall response that can be found in non-collinear ferromagnetic, and antiferromagnetic phases.
36 MATERIALS SCIENCE↗
Higher harmonics in planar Hall effect induced by cluster magnetic multipoles
Antiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish “cluster magnetic multipoles” in AFM Nd 2 Ir 2 O 7 (NIO-227) fully strained films. By imposing compressive strain on the spin structure of NIO-227, we artificially induced cluster magnetic multipoles, namely dipoles and A 2 - and T 1 -octupoles. Importantly, under magnetic field rotation, each magnetic multipole exhibits distinctive harmonics of the PHE oscillation. Moreover, the planar Hall conductivity has a nonlinear magnetic field dependence, which can be attributed to the magnetic response of the cluster magnetic octupoles. Our work provides a strategy for identifying cluster magnetic multipoles in AFM systems and would promote octupole-based AFM spintronics.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet
Abstract Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn 3 Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn 3 Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn 2 PdIn
Noncollinear magnets with near-zero net magnetization and nontrivial bulk electronic topology hold significant promise for spintronic applications, though their scarcity necessitates deliberate design strategies. In this work, a topologically nontrivial electronic structure is reported in metallic Mn 2 PdIn, which crystallizes in the inverse Heusler structure and exhibits a spin-glassy ground state with quenched magnetization. The system features Weyl-type band crossings near the Fermi level and reveals a novel interplay among momentum-space nesting, orbital hybridization, and spin-orbit coupling. Comprehensive magnetotransport measurements reveal a pronounced anomalous Hall effect (AHE) in Mn 2 PdIn. The observed quadratic relationship between the longitudinal and anomalous Hall resistivities highlights the dominance of the intrinsic Berry curvature contribution to the AHE. These findings establish inverse Heusler alloys as compelling platforms for realizing noncollinear magnets that host Weyl-type semimetallic or metallic phases-combining suppressed magnetization with robust electronic transport-thereby offering a promising route toward their seamless integration into next-generation spintronic devices.
Ahmed, Afsar [Saha Institute of Nuclear Physics, K↗