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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2023

Controller Verification of a Smart-Grid Compatible 200 kHz Single-stage Photovoltaic Microinverter

This paper presents control system design, implementation, and experimental validation of a single-stage 400 W, 200 kHz solar photovoltaic (PV) microinverter using hardware-in-the-loop (HIL) and hardware testing. The selected circuit topology is based on a Gallium Nitride (GaN) direct-matrix based dual active bridge (DAB) converter with a low voltage active power decoupler (APD) circuit. Control performance is verified, smart-grid compatibility is tested, and circuit operation is confirmed. Controller HIL (CHIL) is shown to aid in a complex power electronics system design by 1) enabling detailed control development prior to hardware implementation, 2) expanding the use of automated testing, and 3) increasing confidence in control performance prior to prototype testing. Altogether, these factors make HIL a valuable tool in complex power electronic designs.

14 SOLAR ENERGY↗
DOE OSTI2020

Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps

Here, aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal–semiconductor–metal structures and tested with ultrafast, UV laser pulses. The measurements were performed with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy

42 ENGINEERING↗
DOE OSTI2021

Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation

Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.

42 ENGINEERING↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2022

Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Efficient and ultrafast (aluminum)-gallium-nitride-based metal-semiconductor-metal (Al x )Ga 1–x N ultraviolet photodiodes were implemented to investigate the spectral properties of GaN/AlGaN-based photodetectors. Al composition of the GaN templates were varied from 0-% to 30% to demonstrate the impact of Al mole fraction on the cutoff wavelength of these UV photodiodes. Asymmetric metal contact electrodes were fabricated to optimize the external quantum efficiency without compromising their ultrafast photoresponse. Here, the best performing devices exhibited a peak response of 4 V and an oscilloscope limited temporal pulse width of 61 ps at a 20-V bias with a peak spectral responsivity of 36.5 mA/W at 280 nm.

42 ENGINEERING↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2020

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Postfault Operation of Three-Level Inverter Driven Six-Phase PMSM With Enhanced Torque–Speed Region

This article presents an open-switch postfault operational technique with enhanced torque–speed region for three-level (3L) active neutral point clamped (ANPC) inverter-driven symmetrical six-phase (SSP) permanent magnet synchronous machines (PMSMs). Maximum torque (MT), minimum loss (ML), and single three-phase (STP) operations are commonly used for the postfault operations of six-phase drives. The maximum possible torque and speed in these operations are generally limited by voltage, current ratings, and the neutral point configuration of the motor. To enhance the postfault torque and speed operating region, the torque and speed limits in different postfault operational techniques are determined based on the voltage, current constraints, and neutral point configuration of the SSP-PMSM. In this work, a unified postfault operation is proposed that increases the postfault operational limits by combining MT, ML, and STP operations and modifying the neutral point configuration of the SSP-PMSM. In addition, a technique is also presented that modifies the pulsewidth modulation technique to enable full torque operation below 0.5 p.u. speed. The proposed postfault operational technique enables full-speed (1 p.u.) operation by operating in STP mode and full torque operation (1 p.u.) below 0.5 p.u. speed. Furthermore, the postfault operational technique is experimentally validated using a Gallium Nitride (GaN) device-based3L-ANPC inverter-driven SSP-PMSM.

42 ENGINEERING↗
DOE OSTI2020

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

The authors present a quantitative secondary ion mass spectrometry (SIMS) analysis of the useful ion yield of magnesium dopant in a gallium nitride matrix. A quadrupole SIMS instrument was used to analyze an Mg-doped GaN sample grown by metal organic chemical vapor deposition. Oxygen (O2+) was used as the primary ion beam and its energy was varied in the range from 0.5 to 5 kV with and without oxygen flooding near the sample. The results of the analysis can be used to determine the primary beam energies for optimal magnesium sensitivity.

Senevirathna, M. K. Indika (ORCID:0000000243575029↗
DOE OSTI2020

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

The optimum detection levels that can be achieved by a secondary ion mass spectrometer are dependent on how efficiently a particular species of interest can be ionized and detected. One can determine in advance whether the analysis of a particular ion in the sample is possible, if the useful ion yield is known. The useful ion yield depends on the element, instrument transmission, the analytical conditions, the sample matrix, etc. The value of the useful ion yield for a species can diverge from one instrument type to another due to its different transmission and ionization probabilities. However, the same tendencies in the results may be expected for all types of instruments. In this paper, the authors present a quantitative secondary ion mass spectrometry analysis of the useful ion yield for the silicon dopant species in a gallium nitride matrix grown by metal organic chemical vapor deposition. Positively ionized cesium was used as the primary ion beam, and its energy was varied in the range from 0.5 to 5 kV. A quadrupole mass analyzer was utilized to collect secondary ion species of interest. The analysis results can be used to determine the primary beam energies for optimal Si sensitivity.

Senevirathna, M. K. Indika (ORCID:0000000243575029↗
DOE OSTI2022

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗
DOE OSTI2024

Handbook of Molecular Beam Epitaxy of Oxide Materials: Epitaxial Complex Oxide Growth on Semiconductors

This chapter covers the epitaxy of complex oxides on common inorganic semiconductors. The chapter opens with an introduction, motivating the subject and highlighting key general challenges (Section 6.1). We then proceed to describe the general steps of the growth procedure in Section 6.2, which concludes with an overall discussion about trade-offs and expectation management, with an emphasis on the oxide–semiconductor interface. From there, the text describes oxide growth on the common semiconductors, starting with silicon (Section 6.3), where surface reactions and oxidation are the most challenging aspects. Oxide epitaxy on germanium is described in Section 6.4, which is a less challenging oxide growth scheme on semiconductors. Section 6.5 describes oxide epitaxy on gallium arsenide, one of the more challenging schemes, where interface stability and surface preparation pose key challenges. Finally, in Section 6.6, oxide epitaxy on gallium nitride is described, where the lattice mismatch takes the stage as the key challenge. Altogether, this chapter aims to provide the reader with the practical knowledge, tactics and strategies for oxide epitaxy on semiconductors.

Demkov, Alexander A↗
DOE OSTI2021

Classification of Semiconductors Using Photoluminescence Spectroscopy and Machine Learning

Photoluminescence spectroscopy is a nondestructive optical method that is widely used to characterize semiconductors. In the photoluminescence process, a substance absorbs photons and emits light with longer wavelengths via electronic transitions. This paper discusses a method for identifying substances from their photoluminescence spectra using machine learning, a technique that is efficient in making classifications. Neural networks were constructed by taking simulated photoluminescence spectra as the input and the identity of the substance as the output. Here, six different semiconductors were chosen as categories: gallium oxide (Ga 2 O 3 ), zinc oxide (ZnO), gallium nitride (GaN), cadmium sulfide (CdS), tungsten disulfide (WS 2 ), and cesium lead bromide (CsPbBr 3 ). The developed algorithm has a high accuracy (>90%) for assigning a substance to one of these six categories from its photoluminescence spectrum and correctly identified a mixed Ga 2 O 3 /ZnO sample.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Exploring model complexity in machine learned potentials for simulated properties

Abstract Machine learning (ML) enables the development of interatomic potentials with the accuracy of first principles methods while retaining the speed and parallel efficiency of empirical potentials. While ML potentials traditionally use atom-centered descriptors as inputs, different models such as linear regression and neural networks map descriptors to atomic energies and forces. This begs the question: what is the improvement in accuracy due to model complexity irrespective of descriptors? We curate three datasets to investigate this question in terms of ab initio energy and force errors: (1) solid and liquid silicon, (2) gallium nitride, and (3) the superionic conductor Li $$_{10}$$ 10 Ge(PS $$_{6}$$ 6 ) $$_{2}$$ 2 (LGPS). We further investigate how these errors affect simulated properties and verify if the improvement in fitting errors corresponds to measurable improvement in property prediction. By assessing different models, we observe correlations between fitting quantity (e.g. atomic force) error and simulated property error with respect to ab initio values. Graphical abstract

Rohskopf, A. (ORCID:0000000227128296)↗
DOE OSTI2020

14 MeV DT Neutron Test Facility at the Sandia Ion Beam Laboratory

A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Compact Solid-State High-Voltage Switch

Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.

42 ENGINEERING↗