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At least 163 records · Page 9

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DOE OSTI2022

Gated ring oscillator with constant dynamic power consumption

A pure digital ring oscillator with constant power consumption as oscillation frequency is adjusted. Circuit topology includes a multiplexer implemented in NAND gates and a delay element positioned after a path selection NAND gate of that multiplexer such that delay element transistors may not toggle if the non-delaying signal path is selected. Assuming a delay element oscillation frequency f and a total capacitance C, and also assuming a plurality N of delay gates each characterized by a propagation delay t1 and a capacitance C1 such that C=C1*N, the ring oscillator of the present invention is characterized by a C value that is proportional to N and an f value that is inversely proportional to N. Furthermore, each of the N delay gates as well as the input and output gates of the multiplexer are characterized by a common capacitance-to-propagation delay ratio=C1/t1.

Wu, Jinyuan↗

DOE OSTI2023

Gated ring oscillator with constant dynamic power consumption

Wu, Jinyuan↗

DOE OSTI2023

Power converter having a gate drive circuit and method of operating

A power converter apparatus comprises a set of switching elements communicatively coupled with a set of gate drive circuits. Each gate drive circuit is configured to provide a respective drive signal to a corresponding switching element, each switching element being switchably responsive to the respective drive signal. The apparatus includes a controller module configured to control an output state of the power converter, and selectively change one of a respective gate resistance and a respective gate current of a corresponding subset of the gate drive circuits based on the output state of the power converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2021

A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications

This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2022

Na + -gated nanochannel membrane for highly selective ammonia (NH 3 ) separation in the Haber-Bosch process

Currently, cryogenic condensation is the predominant process for recovering ammonia (NH 3 ) in the Haber-Bosch (HB) process, which is highly energy intensive. To be more compatible with the reaction conditions in the HB process and thus minimize the pressure and temperature swing during reactant recycling, energy-efficient technologies for NH 3 extraction at elevated temperature and pressure are greatly needed. In this work, the Na + -gated nanochannel membrane, shown exclusively for water conduction in our previous work, also exhibited highly NH 3 -selective performance, with NH 3 /H 2 selectivity as high as 4,280 and NH 3 /N 2 selectivity > 10,000 at temperature up to 250 °C and pressure up to 35 bar. Excellent stability of the Na + -gated nanochannel membrane was demonstrated during a 100-h run in ternary NH 3 /H 2 /N 2 gas mixture at 200 °C and 35 bar, consistent with structural characterization by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Fourier transfer infrared (FTIR) spectroscopy. A techno-economic analysis (TEA) was conducted for the HB process using the Na + -gated nanochannel membrane and the traditional HB process with condenser. Finally, under the optimized separation conditions, > 80% energy savings and approximately 20% reduction of the net NH 3 production cost can be achieved, demonstrating the great potential of the Na + -gated nanochannel membrane for NH 3 separation in the HB process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Laser-free trapped-ion entangling gates with simultaneous insensitivity to qubit and motional decoherence

The dominant error sources for state-of-the-art laser-free trapped-ion entangling gates are decoherence of the qubit state and the ion motion. The effect of these decoherence mechanisms can be suppressed with additional control fields or with techniques that have the disadvantage of reducing gate speed. In this study, we propose using a near-motional-frequency magnetic field gradient to implement a laser-free gate that is simultaneously resilient to both types of decoherence, does not require additional control fields, and has a relatively small cost in gate speed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Photon-recoil and laser-focusing limits to Rydberg gate fidelity

Limits to Rydberg gate fidelity that arise from the entanglement of internal states of neutral atoms with the motional degrees of freedom due to the momentum kick from photon absorption and re-emission is quantified. This occurs when the atom is in a superposition of internal states but only one of these states is manipulated by visible or UV photons. The Schrödinger equation that describes this situation is presented and two cases are explored. In the first case, the entanglement arises because the spatial wave function shifts due to the separation in time between excitation and stimulated emission. For neutral atoms in a harmonic trap, the decoherence can be expressed within a sudden approximation when the duration of the laser pulses are shorter than the harmonic oscillator period. In this limit, the decoherence is given by simple analytic formulas that account for the momentum of the photon, the temperature of the atoms, the harmonic oscillator frequency, and atomic mass. In the second case, there is a reduction in gate fidelity because the photons causing absorption and stimulated emission are in focused beam modes. This leads to a dependence of the optically induced changes in the internal states on the center of mass atomic position. In the limit where the time between pulses is short, the decoherence can be expressed as a simple analytic formula involving the laser waist, temperature of the atoms, the trap frequency, and the atomic mass. These limits on gate fidelity are studied for the standard π-2π-π Rydberg gate and a protocol based on a single adiabatic pulse with a Gaussian envelope.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

Primitive quantum gates for an S U ( 2 ) discrete subgroup: Binary octahedral

We construct a primitive gate set for the digital quantum simulation of the 48-element binary octahedral ( BO ) group. This non-Abelian discrete group better approximates S U ( 2 ) lattice gauge theory than previous work on the binary tetrahedral group at the cost of one additional qubit—for a total of six—per gauge link. The necessary primitives are the inversion gate, the group multiplication gate, the trace gate, and the BO Fourier transform. Published by the American Physical Society 2024

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Floquet-engineered fast SNAP gates in weakly coupled circuit-QED systems

Superconducting cavities with high quality factors, coupled to a fixed-frequency transmon, provide a state-of-the-art platform for quantum information storage and manipulation. The commonly used selective number-dependent arbitrary phase ( SNAP ) gate faces significant challenges in ultrahigh-coherence cavities, where the weak dispersive shifts necessary for preserving high coherence typically result in prolonged gate times. Here, in this work, we propose a protocol to achieve high-fidelity SNAP gates that are orders of magnitude faster than the standard implementation, surpassing the speed limit set by the bare dispersive shift. We achieve this enhancement by dynamically amplifying the dispersive coupling via sideband interactions, followed by quantum optimal control on the Floquet-engineered system. We also present a unified perturbation theory that explains both the gate acceleration and the associated benign drive-induced decoherence, corroborated by Floquet-Markov simulations. These results pave the way for the experimental realization of high-fidelity, selective control of weakly coupled, high-coherence cavities, and expanding the scope of optimal control techniques to a broader class of Floquet quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗

NASA NTRSDate not supplied

DC Modeling of 4H-SiC JFET Gate Length Reduction at 500°C

The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460 °C surface of Venus. Currently, NASA is looking towards SiC-based devices to provide such a solution. However, the current NASA silicon carbide (SiC) JFET device with a channel length of 6μm (for recently fabricated Gen. 11 ICs) limits on mission relevant circuit capabilities [1]. In this study, we combined experiments with simulations to explore two straightforward fabrication strategies to reduce the SiC JFET channel length while maintaining turn-off behavior (Fig. 1a) needed to realize 500 °C circuit operation. The first fabrication strategy uses a shallow self-align nitrogen implant (Figure 1b) along the device's top surface but not below the gate combined with a high-dose phosphorous implant directly below the source and drain contacts. For the second fabrication strategy (Figure 1c), the high-dose phosphorous implants extended from below the contacts all the way up to the gate edges. Simulations guided gate length reductions without significant degradation in the turn-off performance. In total 12 SiC JFET variants implementing using the different fabrication strategies, gate lengths, and n-channel epilayer thickness were implemented in our simulation framework implemented in COMSOL. Since the COMSOL database does not have the material properties for 4H-SiC, these parameters were taken from the literature and implemented in COMSOL. The empirical models [2] for incomplete ionization, Auger recombination, low field mobility, and Shockley-Read-Hall recombination were implemented to account for material-specific device behavior.

4H-SiC JFET↗

DOE OSTI2026

Probing the Nanoscale Excitonic Landscape and Confinement of Excitons in Gated Monolayer Semiconductors

Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. Here, in this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer WS 2 under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in 2D materials.

2D materials↗

DOE OSTI2021

Channelrhodopsin C1C2: Photocycle kinetics and interactions near the central gate

Channelrhodopsins (ChR) are light-sensitive cation channels used in optogenetics, a technique that applies light to control cells (e.g., neurons) that have been modified genetically to express those channels. Although mutations are known to affect pore kinetics, little is known about how mutations induce changes at the molecular scale. To address this issue, we first measured channel opening and closing rates of a ChR chimera (C1C2) and selected variants (N297D, N297V, and V125L). Then, we used atomistic simulations to correlate those rates with changes in pore structure, hydration, and chemical interactions among key gating residues of C1C2 in both closed and open states. Overall, the experimental results show that C1C2 and its mutants do not behave like ChR2 or its analogous variants, except V125L, making C1C2 a unique channel. Furthermore, our atomistic simulations confirmed that opening of the channel and initial hydration of the gating regions between helices I, II, III, and VII of the channel occurs with 1) the presence of 13-cis retinal; 2) deprotonation of a glutamic acid gating residue, E129; and 3) subsequent weakening of the central gate hydrogen bond between the same glutamic acid E129 and asparagine N297 in the central region of the pore. Also, an aspartate (D292) is the unambiguous primary proton acceptor for the retinal Schiff base in the hydrated channel.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe 3 GaTe 2

Fe 3 GaTe 2 , a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($T$ C ). In this study, we reveal the electronic structure of Fe 3 GaTe 2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($J$ ex ) and magnetic anisotropy energy to the development of the high-$T$ C ferromagnetic ordering in Fe 3 GaTe 2 . Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. In conclusion, these findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$T$ C ferromagnetic ordering in Fe 3 GaTe 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2023

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Gate-free state preparation for fast variational quantum eigensolver simulations

Abstract The variational quantum eigensolver is currently the flagship algorithm for solving electronic structure problems on near-term quantum computers. The algorithm involves implementing a sequence of parameterized gates on quantum hardware to generate a target quantum state, and then measuring the molecular energy. Due to finite coherence times and gate errors, the number of gates that can be implemented remains limited. In this work, we propose an alternative algorithm where device-level pulse shapes are variationally optimized for the state preparation rather than using an abstract-level quantum circuit. In doing so, the coherence time required for the state preparation is drastically reduced. We numerically demonstrate this by directly optimizing pulse shapes which accurately model the dissociation of H 2 and HeH + , and we compute the ground state energy for LiH with four transmons where we see reductions in state preparation times of roughly three orders of magnitude compared to gate-based strategies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Quantum logic gate synthesis as a Markov decision process

Reinforcement learning has witnessed recent applications to a variety of tasks in quantum programming. The underlying assumption is that those tasks could be modeled as Markov decision processes (MDPs). Here, we investigate the feasibility of this assumption by exploring its consequences for single-qubit quantum state preparation and gate compilation. By forming discrete MDPs, we solve for the optimal policy exactly through policy iteration. We find optimal paths that correspond to the shortest possible sequence of gates to prepare a state or compile a gate, up to some target accuracy. Our method works in both the absence and presence of noise and compares favorably to other quantum compilation methods, such as the Ross–Selinger algorithm. This work provides theoretical insight into why reinforcement learning may be successfully used to find optimally short gate sequences in quantum programming.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗