The vanadium-gallium system in the region of V sub 3 Ga.
Solubility range of 75 atomic percent vanadium- gallium system to determine phases in equilibrium and ascertain presence or absence of superconductivity
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Solubility range of 75 atomic percent vanadium- gallium system to determine phases in equilibrium and ascertain presence or absence of superconductivity
Results of theoretical and applied research related to fissioning uranium plasmas. Topics examined include uranium plasma instabilities, diagnostic techniques, radiant heat transfer characteristics, nuclear pumping of lasers, and various fission engine concepts. Engineering aspects considered for open-cycle gas core engines include effects of buoyancy on fuel containment, flow and criticality problems, effects of injection conditions, and radiation hazards. The nuclear light bulb engine, the mini-cavity reactor, the dust-bed reactor, and the colloid core reactor are also examined in terms of design and control considerations. Individual items are abstracted in this issue.
The mean thermal conductivity of liquid gallium was measured as 70 (plus or minus 7) W/m/K over the range 250-550 C. For indium antimonide, Kl = 2.04Ks at the melting temperature with Kl = 9.23 W/m/K- as a reasonable absolute value.
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The results of an experimental program to develop the epitaxial growth techniques and analytical characterization techniques to fabricate graded bandgap solar cells are reported.
A double discharge technique was used in the investigation. An initial discharge established between parallel arrays of tungsten pin electrodes was followed, after a variable time delay, by a high voltage (180 kV), short duration (50 nsec) secondary discharge between two aluminum main electrodes. Metal compounds, including metal alkyls, hydrides, and halides, were used to obtain the required metal atom concentrations. Twenty-four new laser transitions involving 9 different metal atoms were observed. The observed relations are shown in a number of partial energy-level diagrams.
Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.
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The development of a sulfur-iodine thermal water splitting cycle is described. The process features a 50% thermal efficiency, plus all liquid and gas handling. Basic chemical investigations comprised the development of multitemperature and multistage sulfuric acid boost reactors, defining the phase behavior of the HI/I2/H2O/H3PO4 mixtures, and development of a decomposition process for hydrogen iodide in the liquid phase. Initial process engineering studies have led to a 47% efficiency, improvements of 2% projected, followed by coupling high-temperature solar concentrators to the splitting processes to reduce power requirements. Conceptual flowsheets developed from bench models are provided; materials investigations have concentrated on candidates which can withstand corrosive mixtures at temperatures up to 400 deg K, with Hastelloy C-276 exhibiting the best properties for containment and heat exchange to I2.
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The effects of interfacial chemistry on the electrical properties of metal contacts to gallium arsenides and aluminum gallium arsenides are determined.
The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.
Transitions of the type 2s-2p in the F I, O I, N I, and C I isoelectronic sequences of copper, zinc, gallium, and germanium have been identified in the spectra from plasmas produced by the Omega laser system at the University of Rochester. The wavelengths are in the range 50 to 112 A and are measured using silicon and oxygen lines as wavelength standards for gallium and using several lines from the F I, O I, and Na I isoelectronic sequences as wavelength standards for copper, zinc, and germanium. The energy levels that are determined from the measured wavelengths are also presented. Based on these measurements, the wavelengths for a number of magnetic-dipole transitions within the ground configurations of the F I, O I, and N I isoelectronic sequences are predicted.
The Cape Smith Belt is a 380x60 km tectonic klippe composed of greenschistto amphibolite-grade mafic and komatiitic lava flows and fine-grained quartzose sediment, intruded by minor syn- to post-tectonic granitoids. Previously studied transects in areas of relatively high structural level show that the belt is constructed of seven or more north-dipping thrust sheets which verge toward the Superior Province (Archean) foreland in the south and away from an Archean basement massif (Kovik Antiform) external to the Trans-Hudson Orogen (Early Proterozoic) in the north. A field project (mapping and structural-stratigraphic-metamorphic studies) directed by MRS was begun in 1985 aimed at the structurally deeper levels of the belt and underlying basement, which are superby exposed in oblique cross-section (12 km minimum structural relief) at the west-plunging eastern end of the belt. Mapping now complete of the eastern end of the belt confirms that all of the metavolcanic and most of the metasedimentary rocks are allochthonous with respect to the Archean basement, and that the thrusts must have been rooted north of Kovik Antiform. The main findings follow.
Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.
The Infrared Space Observatory (ISO) satellite will contain a 60 cm telescope. A 4 faces pyramid mirror feeds each experiment with a 3 arc minute part of the telescope field of view. The camera system is described. The arrays for the 3 to 5 and 5 to 17 micron channel are also discussed.
Preliminary results from the Hughes 58 x 62 gallium-doped silicon infrared array are presented. The device functioned predictably and repeatedly at the low temperatures for the Space Infrared Telescope Facility (SIRTF). Power dissipation was reduced to acceptable levels while still maintaining the device speed. The infrared response was excellent and the degree of anomalous effects was compatible to conventional photoconductors.