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At least 163 records · Page 9

InAsSbBi, a direct band-gap, III-V, LWIR material

In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation.

Stringfellow, G. B.↗

Large-gap magnetic suspension systems

The classification of magnetic suspension devices into small-gap and large-gap categories is addressed. The relative problems of position sensing, control systems, power supplies, electromagnets, and magnetic field or force analysis are discussed. The similarity of all systems from a controls standpoint is qualified. Some applications where large-gap technology is being applied to systems with a physically small air-gap are mentioned. Finally, the applicability of some other suspension approaches, such as electrodynamic or superconducting are briefly addressed.

Britcher, Colin P.↗

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Choi, S. W.↗

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Choi, S. W.↗

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Xing, G. C.↗

Supersonic flow and shock formation in turbine tip gaps

Shock formation due to overexpansion of supersonic flow at the inlet to the tip clearance gap of a turbomachine has been studied. As the flow enters the tip gap, it accelerates around the blade pressure-side corner creating a region of minimum static pressure. The 'free streamline' separates from the wall at the corner; and, for Mach numbers greater than about 1.3, it curves back to intersect the blade tip. At this point, the freestream flow is abruptly turned parallel to the surface, giving rise to an oblique shock. The results are consistent with compressible sharp-edged orifice flow calculations found in the literature and with the theory of oblique shock wave formation in supersonic flow over a wedge. For freestream Mach numbers of 1.4 to 1.8, wave angles are 43 to 54 deg, and turning angles are 9 to 20 deg; as the Mach number increases, the angle of turn also increases. It appears that in a turbine, after separating from the inlet corner, the flow reattaches on the blade tip and an oblique shock is formed at 0.4-1.4 tip gap heights into the clearance gap. The resulting shock-boundary layer interaction may contribute to further enhancement of already high heat transfer to the blade tip in this region. This in turn could lead to higher blade temperatures and adversely affect blade life and turbine efficiency.

Moore, John↗

Features and applications of the Groove Analysis Program (GAP)

An IBM Personal Computer (PC) version of the Groove Analysis program (GAP) was developed to predict the steady state heat transport capability of an axially grooved heat pipe for a specified groove geometry and working fluid. In the model, the capillary limit is determined by the numerical solution of the differential equation for momentum conservation with the appropriate boundary conditions. This governing equation accounts for the hydrodynamic losses due to friction in liquid and vapor flows and due to liquid/vapor shear interaction. Back-pumping in both 0-g and 1-g is accounted for in the boundary condition at the condenser end. Slug formation in 0-g and puddle flow in 1-g are also considered in the model. At the user's discretion, the code will perform the analysis for various fluid inventories (undercharge, nominal charge, overcharge, or a fixed fluid charge) and heat pipe elevations. GAP will also calculate the minimum required heat pipe wall thickness for pressure containment at design temperatures that are greater than or lower than the critical temperature of the working fluid. This paper discusses the theory behind the development of the GAP model. It also presents the many useful and powerful capabilities of the model. Furthermore, a correlation of flight test performance data and the predictions using GAP are presented and discussed.

Ku, Jentung↗

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗

Characterizing the Nightside Auroral Gap Using Polar-UVI Images

Using images from the Ultraviolet Imager (UVI) aboard the Polar spacecraft, we identify an unusual morphological feature of the auroral oval marked by a drastic decrease of auroral luminosity near local midnight during the growth and/or recovery phases of some substorms. This feature has not been previously described in much detail. The nightside cap appears in roughly 10% of the substorms during our study period of January and February, 1997. Two nightside gap events are characterized in detail as case studies of this phenomenon. We show that the nightside gap typically spans 1.0-1.5 hours in local time between 2200 LT and 2400 MLT and extends across the entire north/south direction of the auroral oval. Within this well-defined region, the energy flux is only 20-30% of the adjacent auroral activity at levels generally < 1.5 erg/sq cm.s. These phenomena indicate that there exists a region in the plasma sheet which maps to the nightside gap sector that is depleted of electrons during these events. Another possibility is that within the gap region, which lacks discrete auroral structures, no significant field-aligned currents exist and there is an insufficient ionospheric potential to accelerate precipitating electrons.

Chua, D.↗

The Slot Gap Model for Pulsar High-Energy Emission

A new picture of pulsar high-energy emission is proposed that is different from both the traditional polar cap and outer gap models, but combines elements of each. The slot gap model is based on electron acceleration along the edge of the open field region from the neutron star surface to near the light cylinder. Along the last open field line, the pair formation front rises to very high altitude forming a slot gap, where the accelerating electric field is unscreened by pairs. Electrons continue to accelerate to high altitudes in the slot gap, reaching a radiation reaction-limited energy of several TeV. The resulting radiation pattern features sharp caustics on the trailing edge of the open field region, allowing for the possibility of double-peaked pulse profiles very similar to those observed in gamma-ray pulsars. Since emission from a large range of altitudes arrives in phase, this model very naturally explains the phase alignment of radiation at all wavelengths from the Crab pulsar.

Harding, Alice K.↗

Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks

Methods of fabricating nano-gap electrode structures in array configurations, and the structures so produced. The fabrication method involves depositing first and second pluralities of electrodes comprising nanowires using processes such as lithography, deposition of metals, lift-off processes, and chemical etching that can be performed using conventional processing tools applicable to electronic materials processing. The gap spacing in the nano-gap electrode array is defined by the thickness of a sacrificial spacer layer that is deposited between the first and second pluralities of electrodes. The sacrificial spacer layer is removed by etching, thereby leaving a structure in which the distance between pairs of electrodes is substantially equal to the thickness of the sacrificial spacer layer. Electrode arrays with gaps measured in units of nanometers are produced. In one embodiment, the first and second pluralities of electrodes are aligned in mutually orthogonal orientations.

Son, Kyung-Ah↗

High-Altitude Emission from Pulsar Slot Gaps: The Crab Pulsar

We present results of a 3D model of optical to gamma-ray emission from the slot gap accelerator of a rotation-powered pulsar. Primary electrons accelerating to high-altitudes in the unscreened electric field of the slot gap reach radiation-reaction limited Lorentz factors of approx. 2 x 10(exp 7), while electron-positron pairs from lower-altitude cascades flow along field lines interior to the slot gap. The curvature, synchrotron and inverse Compton radiation of both primary electrons and pairs produce a broad spectrum of emission from infra-red to GeV energies. Both primaries and pairs undergo cyclotron resonant absorption of radio photons, allowing them to maintain significant pitch angles. Synchrotron radiation from pairs with a power-law energy spectrum from gamma = 10(exp 2) - 10(exp 5), dominate the spectrum up to approx. 10 MeV. Synchrotron and curvature radiation of primaries dominates from 10 MeV up to a few GeV. We examine the energy-dependent pulse profiles and phase-resolved spectra for parameters of the Crab pulsar as a function of magnetic inclination alpha and viewing angle zeta, comparing to broad-band data. In most cases, the pulse profiles are dominated by caustics on trailing field lines. We also explore the relation of the high-energy and the radio profiles, as well as the possibility of caustic formation in the radio cone emission. We find that the Crab pulsar profiles and spectrum can be reasonably well reproduced by a model with alpha = 45deg and zeta approx. 100deg or 80deg. This model predicts that the slot gap emission below 200 MeV will exhibit correlations in time and phase with the radio emission.

Harding, Alice K.↗

Closed Gap Slug Calorimeter for Plasma Stream Characterization

Slug calorimeters are used in sheer and stagnation mode to characterize heat flux levels for high enthalpy streams. The traditional design features a gap between slug and holder, which can be of concern in these convective heat flux environments. The challenge is to develop a calorimeter that closes the gap to gas flow, but largely maintains thermal insulation of the slug. The work presented herein introduces two new slug calorimeter designs featuring a closed gap. This is done using either aerogel as a filler or press fitting the slug with a disk. The designs were verified and compared to the baseline calorimeter design under radiative heat flux. Building on this, the calorimeters were exposed to convective heat flux in the arc-jet facilities. Results from the new designs and conclusions on the impact of the gap in convective heat flux will be shown.

Nawaz, Anuscheh↗

A Geometric Analysis to Protect Manned Assets from Newly Launched Objects - COLA Gap Analysis

A safety risk was identified for the International Space Station (ISS) by The Aerospace Corporation following the launch of GPS IIR-20 (March 24, 2009), when the spent upper stage of the launch vehicle unexpectedly crossed inside the ISS notification box shortly after launch. This event highlighted a 56-hour vulnerability period following the end of the launch Collision Avoidance (COLA) process where the ISS would be unable to react to a conjunction with a newly launched object. Current launch COLA processes screen each launched object across the launch window to determine if an object's nominal trajectory is predicted to pass within 200 km of the ISS (or any other manned/mannable object), resulting in a launch time closure. These launch COLA screens are performed from launch through separation plus I 00 minutes. Once the objects are in orbit, they are cataloged and evaluated as part of routine on-orbit conjunction assessment processes. However, as the GPS IIR-20 scenario illustrated, there is a vulnerability period in the time line between the end of launch COLA coverage and the beginning of standard on-orbit COLA assessment activities. The gap between existing launch and on-orbit COLA processes is driven by the time it takes to track and catalog a launched object, identify a conjunction, and plan and execute a collision avoidance maneuver. For the ISS, the total time required to accomplish an of these steps is 56 hours. To protect human lives, NASA/JSC has requested that an US launches take additional steps to protect the ISS during this "COLA gap" period. The uncertainty in the state of a spent upper stage can be quite large after all bums are complete and all remaining propellants are expelled to safe the stage. Simply extending the launch COLA process an additional 56 hours is not a viable option as the 3-sigma position uncertainty will far exceed the 200 km miss-distance criterion. Additionally, performing a probability of collision (Pc) analysis over this period is also not practical due to the limiting effects of these large orbit state uncertainties. An estimated upper bound for Pc for a typical spent upper stage if nominally aligned for a direct broadside collision with the ISS is only on the order of 10-6. For a smaller manned object such as a Soyuz capsule, the risk level decreases to an order of 10'8 . In comparison, the Air Force Range policy (AFI 91-217) for launch COLAs would only eliminate launch opportunities when conjunctions with objects exceed a Pc of 10'5 This paper demonstrates a conservative geometry-based methodology that may be used to determine if launch opportunities pose a threat to the ISS during the COLA gap period. The NASA Launch Services Program at Kennedy Space Center has developed this COLA gap analysis method and employed it fQr three NASA missions to identify potential ISS conjunctions and corresponding launch window closures during the 56-hour at-risk period. In the analysis, for each launch opportunity, the nominal trajectory of the spent upper stage and the orbit state of the ISS are propagated over the 56 hour period. Each time the upper stage crosses the orbit plane of the ISS, the relative radial and argument of latitude separations are calculated. A window cutout is identified if these separation differences fall within a mission-specific violation box, which is determined from the evaluation of a Monte Carlo dispersions analysis that quantifies the potential variation in the upper stage radial and argument of latitude differences. This paper details the results of these analyses and their impacts to each mission.

Hametz, Mark E.↗

Launch Lock Assemblies Including Axial Gap Amplification Devices and Spacecraft Isolation Systems Including the Same

Embodiments of a launch lock assembly are provided, as are embodiments of a spacecraft isolation system including one or more launch lock assemblies. In one embodiment, the launch lock assembly includes first and second mount pieces, a releasable clamp device, and an axial gap amplification device. The releasable clamp device normally maintains the first and second mount pieces in clamped engagement; and, when actuated, releases the first and second mount pieces from clamped engagement to allow relative axial motion there between. The axial gap amplification device normally residing in a blocking position wherein the gap amplification device obstructs relative axial motion between the first and second mount pieces. The axial gap amplification device moves into a non-blocking position when the first and second mount pieces are released from clamped engagement to increase the range of axial motion between the first and second mount pieces.

Barber, Tim Daniel↗

Development of a SMA-Based, Slat-Gap Filler for Airframe Noise Reduction

Noise produced by unsteady flow around aircraft structures, termed airframe noise, is an important source of aircraft noise during the approach and landing phases of flight. Conventional leading-edge-slat devices for high lift on typical transport aircraft are a prominent source of airframe noise. Many concepts for slat noise reduction have been investigated. Slat-cove fillers have emerged as an attractive solution, but they maintain the gap flow, leaving some noise production mechanisms unabated, and thus represent a nonoptimal solution. Drooped-leading-edge (DLE) concepts have been proposed as "optimal" because the gap flow is eliminated. The deployed leading edge device is not distinct and separate from the main wing in DLE concepts and the high-lift performance suffers at high angles of attack (alpha) as a consequence. Elusive high-alpha performance and excessive weight penalty have stymied DLE development. The fact that high-lift performance of DLE systems is only affected at high alpha suggests another concept that simultaneously achieves the high-lift of the baseline airfoil and the noise reduction of DLE concepts. The concept involves utilizing a conventional leading-edge slat device and a deformable structure that is deployed from the leading edge of the main wing and closes the gap between the slat and main wing, termed a slat-gap filler (SGF). The deployable structure consists of a portion of the skin of the main wing and it is driven in conjunction with the slat during deployment and retraction. Benchtop models have been developed to assess the feasibility and to study important parameters. Computational models have assisted in the bench-top model design and provided valuable insight in the parameter space as well as the feasibility.

Turner, Travis L.↗