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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Impact of symmetry on the ferroelectric properties of CaTiO 3 thin films

Epitaxial strain is a powerful tool to induce functional properties such as ferroelectricity in thin films of materials that do not possess ferroelectricity in bulk form. In this paper, a ferroelectric state was stabilized in thin films of the incipient ferroelectric, CaTiO 3 , through the careful control of the biaxial strain state and TiO 6 octahedral rotations. Detailed structural characterization was carried out by synchrotron x-ray diffraction and scanning transmission electron microscopy. CaTiO 3 filmsgrown on La 0.18 Sr 0.82 Al 0.59 Ta 0.41 O 3 (LSAT) and NdGaO 3 (NGO) substrates experienced a 1.1% biaxial strain state but differed in their octahedral tilt structures. A suppression of the out-of-plane rotations of the TiO 6 octahedral in filmsgrown on LSAT substrates resulted in a robust ferroelectricI4 mm phase with remnant polarization ~5 μC/cm 2 at 10 K and T c near 140 K. In contrast, filmsgrown on NGO substrates with significant octahedral tilting showed reduced polarization and T c . Finally, these results highlight the key role played by symmetry in controlling the ferroelectric properties of perovskite oxide thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Band alignment of epitaxial SrTiO{sub 3} thin films with (LaAlO{sub 3}){sub 0.3}-(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001)

SrTiO{sub 3} (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO{sub 3}){sub 0.3}-(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility with STO and the strain-induced ferroelectric response in STO films grown on LSAT. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. We find that the valence band offset ranges from +0.2(1) eV to −0.2(1) eV depending on the film surface termination. From these results, we extract a conduction band offset from −2.4(1) eV to −2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Texture in thin film silicides and germanides: A review

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Phase identification and control of thin films deposited by co-evaporation of elemental Cu, Zn, Sn, and Se

Kesterite thin films [(i.e., Cu{sub 2}ZnSn(S,Se){sub 4} and related alloys] have been the subject of recent interest for use as an absorber layer for thin film photovoltaics due to their high absorption coefficient (>10{sup 4} cm{sup -1}), their similarity to successful chalcopyrites (like CuInxGa{sub 1-x}Se{sub 2}) in structure, and their earth-abundance. The process window for growing a single-phase kesterite film is narrow. In this work, we have documented, for our 9.15%-efficient kesterite co-evaporation process, (1) how appearance of certain undesirable phases are controlled via choice of processing conditions, (2) several techniques for identification of phases in these films with resolution adequate to discern changes that are important to device performance, and (3) reference measurements for those performing such phase identification. Data from x-ray diffraction, x-ray fluorescence, Raman scattering, scanning electron microscopy, energy dispersive spectroscopy, and current-voltage characterization are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

Recently developed classes of monocrystalline silicon solar microcells (μ-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 μm) μ-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon μ-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. Here, the conversion efficiency increases from 8.1% to 11.5% with a small drop in open circuit voltage and fill factor.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

Photoelectrochemical Proton-Coupled Electron Transfer of TiO 2 Thin Films on Silicon

TiO 2 thin films are often used as protective layers on semiconductors for applications in photovoltaics, molecule–semiconductor hybrid photoelectrodes, and more. Experiments reported here show that TiO 2 thin films on silicon are electrochemically and photoelectrochemically reduced in buffered acetonitrile at potentials relevant to photoelectrocatalysis of CO 2 reduction, N 2 reduction, and H 2 evolution. On both n-type Si and irradiated p-type Si, TiO 2 reduction is proton-coupled with a 1e – :1H + stoichiometry, as demonstrated by the Nernstian dependence of the Ti 4+/3+ E 1/2 on the buffer pK a . Experiments were conducted with and without illumination, and a photovoltage of ∼0.6 V was observed across 20 orders of magnitude in proton activity. The 4 nm films are almost stoichiometrically reduced under mild conditions. The reduced films catalytically transfer protons and electrons to hydrogen atom acceptors, based on cyclic voltammogram, bulk electrolysis, and other mechanistic evidence. TiO 2 /Si thus has the potential to photoelectrochemically generate high-energy H atom carriers. Characterization of the TiO 2 films after reduction reveals restructuring with the formation of islands, rendering TiO 2 films as a potentially poor choice as protecting films or catalyst supports under reducing and protic conditions. Altogether, this work demonstrates that atomic layer deposition TiO 2 films on silicon photoelectrodes undergo both chemical and morphological changes upon application of potentials only modestly negative of RHE in these media. While the results should serve as a cautionary tale for researchers aiming to immobilize molecular monolayers on “protective” metal oxides, the robust proton-coupled electron transfer reactivity of the films introduces opportunities for the photoelectrochemical generation of reactive charge-carrying mediators.

Electrodes↗
DOE OSTI2021

Investigations of Polymethacrylate Tribochemical Films Using X-Ray Spectroscopy and Optical Profilometry

This study investigates the elemental composition and surface morphology of solid tribochemical films formed on steel surfaces. The reversible addition-fragmentation chain transfer (RAFT) method was used to synthesize nine different metal-free polymers, which were blended into commercial base oils. The polymers were either homopolymers of dodecyl methacrylate and ethylhexyl methacrylate or were co-polymers of these monomers with six polar monomers. After tribological testing at 100 degrees C using the ball-on-flat geometry, the resulting tribochemical films were imaged using scanning electron microscopy (SEM) and optical microscopy. The resulting tribochemical films have thicknesses around 50-100 nm. Two of the films corresponding to small (P1-imidazole-containing copolymer) and large (P3-less polar homopolymer) wear were cross-sectioned using focused ion beam (FIB) and analyzed for elemental composition using energy-dispersive X-Ray (EDX) mapping. Oxygen and nitrogen enrichment was observed, consistent with the relative chemical composition of the precursor polymers. Transmission electron microscopy (TEM) evidence suggests that at the worn surface, some organic elements penetrate or are mixed into the steel substrate giving an interlocking appearance. The two samples examined with TEM showed that P1 tribofilm is diffused or mixed with the steel substrate more so than P3, suggesting a stronger affinity and contact during tribofilm formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Effects of pyrolysis conditions on dielectric properties of PLZT films derived from a polyvinylpyrrolidone-modified sol-gel process

Graphical abstract: SEM images showing the surface morphology of PLZT films derived from solutions with various PVP content and treated with either RTA (rapid thermal annealing) or SPT (step-wise preheat treatment) process. Highlights: Black-Right-Pointing-Pointer High-quality PLZT films were fabricated by using a polyvinylpyrrolidone-modified sol-gel method. Black-Right-Pointing-Pointer Improved film density and integrity was achieved by employing a novel step-wise preheat treatment (SPT) process. Black-Right-Pointing-Pointer Enhanced dielectric properties were correlated to the improved microstructures as a result of the SPT process. -- Abstract: Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films were deposited on platinized silicon substrates (Pt/Si) using a polyvinylpyrrolidone (PVP) modified sol-gel method. Pyrolysis of the green films was conducted via two methods: rapid thermal annealing (RTA) and a step-wise preheat treatment (SPT). Microstructure analysis and dielectric property characterization were performed on samples treated by these two methods. Results showed that the SPT-pyrolyzed films exhibited much better dielectric properties when compared with the RTA-pyrolyzed films. The differences in dielectric properties were correlated to microstructural features caused by the different pyrolysis conditions. High-quality PLZT films with high dielectric constant ( Almost-Equal-To 860 at zero bias) and high breakdown strength ( Almost-Equal-To 2.1 MV/cm) were fabricated under controlled pyrolysis conditions. This work demonstrated the potential application of this material for power electronics in electric drive vehicles.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Nanoparticle generation and transport resulting from femtosecond laser ablation of ultrathin metal films: Time-resolved measurements and molecular dynamics simulations

The synthesis of metal nanoparticles by ultrafast laser ablation of nanometers-thick metal films has been studied experimentally and computationally. Near-threshold backside laser ablation of 2–20 nm-thick Pt films deposited on fused silica substrates was found to produce nanoparticles with size distributions that were bimodal for the thicker films, but collapsed into a single mode distribution for the thinnest film. Time-resolved imaging of blackbody emission from the Pt nanoparticles was used to reveal the nanoparticle propagation dynamics and estimate their temperatures. The observed nanoparticle plume was compact and highly forward-directed with a well-defined collective velocity that permitted multiple rebounds with substrates to be revealed. Large-scale molecular dynamics simulations were used to understand the evolution of compressive and tensile stresses in the thicker melted liquid films that lead to their breakup and ejection of two groups of nanoparticles with different velocity and size distributions. Ultrafast laser irradiation of ultrathin (few nm) metal films avoids the splitting of the film and appears to be a method well-suited to cleanly synthesize and deposit nanoparticles from semitransparent thin film targets in highly directed beams.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Reflection High-Energy Electron Diffraction Beam-Induced Structural and Property Changes on WO3 Thin Films

Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO3 as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO3, as well as change the electronic properties of the film through preferential removal of surface oxygen.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2014

Effect of silver doping on the surface of La{sub 5/8}Ca{sub 3/8}MnO{sub 3} epitaxial films

Thin film manganese oxides (manganites) display remarkable properties, such as colossal magnetoresistance and charge ordered phases, and became a focal point of research in the past two decades owing to potential applications ranging from oxide spintronics to resistive switching-based memories. La{sub x}Ca{sub 1−x}MnO{sub 3} (LCMO), a widely studied manganite, is known to substantially improve its transport properties when doped with Ag. However, despite the abundance of studies on LCMO, the effect of silver on the surface structure is unknown. Here, through in-situ methods, scanning tunneling microscopy (STM) is performed on La{sub 5/8}Ca{sub 3/8}MnO{sub 3} films grown by pulsed laser deposition. Films doped by silver, as confirmed by in-situ X-ray photoelectron spectroscopy, display large-scale reconstructions, interpreted as being of type (√10 × √10)R18.4°, while films lacking silver display a (√2 × √2)R45° reconstruction that may be associated with a surface charge-ordered state. It is posited that the possible cause of the varied reconstructions is due to a vacancy ordering on top of the existing (√2 × √2)R45° reconstruction. These studies highlight the influence of Ag on the surface structure, and therefore a route towards modifying the surface properties of manganites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The effect of cesium carbonate on 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C 61 aggregation in films

Surface-pressure isotherms, X-ray reflectivity, and X-ray near-total reflection fluorescence were used to study the properties of 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C 61 (PCBM) that was pre-mixed with cesium carbonate and spread as a film at the air-water interface. The pre-mixed PCBM with cesium carbonate demonstrated a strikingly strong effect on the organization of the film. Whereas films formed from pure PCBM solution were rough due to strong inter-molecular interactions, the films formed from the mixture were much smoother. This indicates that the cesium carbonate moderates the inter-molecular interactions among PCBM molecules, hinting that the cesium diffusion observed in inverted organic photovoltaics and the likely ensuing ionic Cs-PCBM interaction decrease aggregation tendency of PCBM. As a result, this implies that the use of cesium salts affects the morphology of the organic layer and consequently improves the efficiency of these devices.

36 MATERIALS SCIENCE↗