Developments of Ellipsometry on Z Shock-Ramp Experiments.
Abstract not provided.
Grant, Sean Campbell↗
SEARCH · Engineering Papers
Results for “Ellipsometry”
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Effects of helium plasmas on tungsten surfaces characterized by helium ion microscopy ion channeling and in-situ spectroscopic ellipsometry.
Abstract not provided.
Kolasinski, Robert↗
Epitaxy of polar semiconductor Co{sub 3}O{sub 4} (110): Growth, structure, and characterization
The (110) plane of Co{sub 3}O{sub 4} spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co{sup 3+} species at the surface. However, experimental studies of Co{sub 3}O{sub 4} (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co{sub 3}O{sub 4} films grown by molecular beam epitaxy in the polar (110) direction on MgAl{sub 2}O{sub 4} substrates. Reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and transmission electron microscopy measurements attest to the high quality of the as-grown films. Furthermore, we investigate the electronic structure of this material by core level and valence band x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Ellipsometry reveals a direct band gap of 0.75 eV and other interband transitions at higher energies. A valence band offset of 3.2 eV is measured for the Co{sub 3}O{sub 4}/MgAl{sub 2}O{sub 4} heterostructure. Magnetic measurements show the signature of antiferromagnetic ordering at 49 K. FTIR ellipsometry finds three infrared-active phonons between 300 and 700 cm{sup −1}.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Visible light carrier generation in co-doped epitaxial titanate films
Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Quantum confinement in transition metal oxide quantum wells
We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique
In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8 μm wavelength.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Understanding the Decreased Segmental Dynamics of Supported Thin Polymer Films Reported by Incoherent Neutron Scattering
Incoherent neutron scattering (INS) has commonly reported a suppression of segmental dynamics for supported thin polymer films as thickness is decreased, which is counter to expectations based on other measurement techniques such as ellipsometry and fluorescence. We utilized INS in order to measure the dynamics of thin films of comb polystyrene (PS) from 50 to 525 K. There is a significant suppression in dynamics as determined from the similar to 5 ns DebyeWaller factor, < u(2)>, as measured via INS for films as thick as 213 nm, while there is no change in the glass transition temperature (T-g) as determined by ellipsometry for films as thin as 20 nm. This poor correlation between T-g from ellipsometry and dynamics as measured by is attributed to contamination of nanosecond by incipient relaxation processes, differences in sensitivity to the postulated dynamically dead layer near the substrate due to the relative weighting of the distribution of dynamics between the two techniques, differences in the time scales probed, and possible decoupling between fast and slow dynamics under nanoconfinement. Moreover, these results suggest that branching of PS significantly increases the interactions with the substrate to suppress the dynamics. Both technique-specific sensitivity to time scales and its weighing of the average over the gradient in dynamic properties present at the interfaces are important to consider when qualitatively different phenomena are inferred from different measurements.
36 MATERIALS SCIENCE↗
Sputter process investigation: Material and environment interaction processes investigation
The multilayer Ellipsometry program has been developed with which the thickness and the optical properties of top layer can be determined with the additional information obtained from other measurement such as the optical constant of the middle layer film. Once the proper parameters are input into the program, the multilayer Ellipsometry program which was developed by H. Kim and Dr. Fromhold gives the best possible set of the solutions for the top layer thickness or its optical index graphically on a PC screen. In this report the basic two layer Ellipsometry theory will be summarized briefly as well as the one layer case. All the code is written in Microsoft Quickbasic version 4.5 for IBM PC with a VGA color graphics monitor so that the measurement could be cross-checked out graphically on the screen.
Williams, John R.↗
Ellipsometric studies of sputtered silicon nitride on n-GaAs
Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.
Peng, Y. K.↗
Materials, structures, and devices for high-speed electronics
Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.
Woollam, John A.↗
Gold Nanoparticle Labels Amplify Ellipsometric Signals
The ellipsometric method reported in the immediately preceding article was developed in conjunction with a method of using gold nanoparticles as labels on biomolecules that one seeks to detect. The purpose of the labeling is to exploit the optical properties of the gold nanoparticles in order to amplify the measurable ellipsometric effects and thereby to enable ultrasensitive detection of the labeled biomolecules without need to develop more-complex ellipsometric instrumentation. The colorimetric, polarization, light-scattering, and other optical properties of nanoparticles depend on their sizes and shapes. In the present method, these size-and-shape-dependent properties are used to magnify the polarization of scattered light and the diattenuation and retardance of signals derived from ellipsometry. The size-and-shape-dependent optical properties of the nanoparticles make it possible to interrogate the nanoparticles by use of light of various wavelengths, as appropriate, to optimally detect particles of a specific type at high sensitivity. Hence, by incorporating gold nanoparticles bound to biomolecules as primary or secondary labels, the performance of ellipsometry as a means of detecting the biomolecules can be improved. The use of gold nanoparticles as labels in ellipsometry has been found to afford sensitivity that equals or exceeds the sensitivity achieved by use of fluorescence-based methods. Potential applications for ellipsometric detection of gold nanoparticle-labeled biomolecules include monitoring molecules of interest in biological samples, in-vitro diagnostics, process monitoring, general environmental monitoring, and detection of biohazards.
Venkatasubbarao, Srivatsa↗
Crystalline Silicon Solar Cells
Most solar cells are fabricated from crystalline or semicrystalline silicon since they are relatively inexpensive starting materials and the resulting solar cells are very efficient. As a result, the optical properties of silicon are extremely important in many aspects of solar cell manufacture, and have been determined by many groups using several techniques. The most reliable values of the optical functions of silicon have been determined using spectroscopic ellipsometry, augmented by optical transmission measurements of the absorption coefficient for wavelengths greater than 700 nm. Obviously, these optical functions depend on the wavelength of light, but they also depend significantly on temperature and morphology. Several thin films are very important to solar cell manufacture, including silicon nitride, silicon dioxide, and aluminum oxide. While the optical properties of these thin films are strong functions of deposition conditions, spectroscopic ellipsometry is ideal for characterizing them. This work will present recent spectroscopic ellipsometry data and optical transmission data from which the optical functions of silicon are obtained. The optical transmission data have been fit from 700 to 1200 nm to a modification of Macfarlane’s et al. formula [Phys. Rev. 111, (1958) 759], resulting in a reduced χ2 of 0.84. This formulation is particularly valuable in that it gives the optical absorption coefficient from 700 to 1200 nm as a function of both wavelength and temperature.
Jellison Jr, Gerald Earle↗
Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma
The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.
36 MATERIALS SCIENCE↗
Surface modification of sol–gel synthesized TiO{sub 2} nanoparticles induced by La-doping
The influence of La-doping in the range of 0.5–6.0 mol% on structural and morphological properties of TiO{sub 2} nanopowders synthesized by sol–gel routine has been investigated by XRPD, AFM, EDS and BET measurements, as well as Raman spectroscopy. The XRPD and Raman measurements have revealed the anatase phase as dominant in all nanopowders, with crystallite size decreasing from ∼ 15 nm in pure TiO{sub 2} to ∼ 12 nm in La-doped samples. The BET data suggest that all samples are fully mesoporous, with mean pore diameters in the range of ∼ 6–8 nm. The specific surface area and the complexity of pore structure are greater in doped samples than in pure TiO{sub 2} sample. The spectroscopic ellipsometry has apparently shown that the band gap has been gradually increased with the increase of La content. The STM and STS techniques have been used successfully to evaluate the surface morphology and electronic properties of La-doped nanopowders. All investigated properties have been related to photocatalytic activity, tested in degradation of a metoprolol tartrate salt (0.05 mM), and induced by UV-radiation. All doped samples showed increased photocatalytic activity compared to pure TiO{sub 2}, among which the 0.65 mol% La-doped sample appeared to be the most efficient. - Highlights: • Effects of La-doping on structural, morphological and electronic properties of TiO{sub 2} nanopowders. • Surface morphology and electronic properties of La-doped nanopowders evaluated by STM/STS. • Spectroscopic ellipsometry shown gradual increase of bandgap with the increase of La content. • Photocatalytic activity of samples was tested in degradation of MET under UV light.
36 MATERIALS SCIENCE↗
Photosensitivity of pulsed laser deposited Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} amorphous thin films
Graphical abstract: - Highlights: • Amorphous Ge{sub 20}As{sub 20}Se{sub 60}/Ge{sub 10}As{sub 30}Se{sub 60} films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge{sub 20}As{sub 20}Se{sub 60} layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge{sub 20}As{sub 20}Se{sub 60} thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.
36 MATERIALS SCIENCE↗
Scalable aqueous-phase fabrication of reduced graphene oxide nanofiltration membranes by an integrated roll-to-roll (R2R) process
Economic fractionation of multicomponent biomass-derived streams is a key challenge in biobased fuels and chemicals production. Kraft black liquor (BL) is generated at ~1 billion tons/yr globally from biomass pulping and contains ~15wt% total solids including lignin, hemicellulose fragments, and inorganics. Membrane-based BL concentration is attractive but challenged by low solute rejections and poor stability in BL, which combines alkaline pH (~13), high dissolved solids content (15+ wt%) and high temperature (70–85°C). Here we discuss the scaled fabrication and characterization of reduced graphene oxide (rGO) nanofiltration membranes by slot die coating on a roll-to-roll (R2R) with integrated vacuum filtration. Here, we obtain high-quality 90×30 cm rGO membranes (referred to as “R2R-rGO membranes” in this work) with ~100 nm average thickness supported on porous poly(ethersulfone) (PES) sheets, and an effective area of 2700cm 2 . We present characterizations of their microstructure and uniformity as mapped over large areas by scanning electron microscopy (SEM), ellipsometry, adhesion test and X-ray photoelectron spectroscopy (XPS). The constructed ellipsometry model for the rGO membrane/PES substrate composite was successfully applied to 48 different locations of the R2R-rGO membranes. The R2R-rGO membranes showed >98% lignin rejection with a steady state flux of ~12 LMH at 50bar in a 15.7wt% total solids (TS) kraft BL stream at 72°C and 2–3 gal/min crossflow rates. Slot die coating on a R2R platform with integrated vacuum filtration can enable rapid fabrication of high-quality GO membranes at scale without organic solvents or volatile organic compounds.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD
An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.
36 MATERIALS SCIENCE↗
Optical properties of large-area ultrathin MoS{sub 2} films: Evolution from a single layer to multilayers
We investigated the optical properties of ultrathin MoS{sub 2} films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS{sub 2} film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS{sub 2} thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d{sup 2}ε(E)/dE{sup 2}), we determined several critical point energies. The d{sup 2}ε(E)/dE{sup 2} spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗