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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. Furthermore, the isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Integration of layered group IV selenides: From SnSe–SnSe 2-x S x core-shell crystals to complex (SnSe–SnSe 2-x S x )-GeSe van der waals heterostructures

The layered semiconductor tin selenide (SnSe) has received extensive interest due to its promising thermoelectric and ferroelectric properties. Integrating SnSe with other layered crystals in heterostructures can enable the modification of charge- and thermal transport, electrical polarization, and other properties such as chemical stability, optoelectronics, and photonics. Here, we demonstrate the vapor transport synthesis of single-crystalline SnSe monochalcogenide flakes that are spontaneously encapsulated in a thin layered SnSe 2-x S x dichalcogenide shell. In a second growth step, such SnSe-SnSe 2-x S x heterostructures are integrated with the monochalcogenide GeSe, which is laterally stitched to the SnSe side facets while preserving the dichalcogenide shell across the basal facets. This architecture is confirmed by optical microscopy, electron microscopy and diffraction, energy dispersive X-ray and Raman spectroscopies, as well as cathodoluminescence spectroscopy. Furthermore, the results extend our capabilities for materials integration by forming complex heterostructures with both vertical van der Waals interfaces and covalent lateral interfaces between layered semiconductors.

2D layered crystals↗
DOE OSTI2021

Strain Gradient Elasticity in SrTiO 3 Membranes: Bending versus Stretching

Young’s modulus determines the mechanical loads required to elastically stretch a material and also the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. The associated energy cost can additionally contribute to elasticity via strain gradients, particularly at small length scales where they are geometrically enhanced. Here, we present nanomechanical measurements of freely suspended SrTiO 3 crystalline membrane drumheads. In this work, we observe an unexpected nonmonotonic thickness dependence of Young’s modulus upon small deflections. Furthermore, the modulus inferred from a predominantly bending deformation is three times larger than that of a predominantly stretching deformation for membranes thinner than 20 nm. In this regime we extract a strain gradient elastic coupling of ~2.2 μN, which could be used in new operational regimes of nanoelectro-mechanics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Probing Oxidation-Driven Amorphized Surfaces in a Ta(110) Film for Superconducting Qubit

Recent advances in superconducting qubit technology have led to significant progress in quantum computing, but the challenge of achieving a long coherence time remains. Despite the excellent lifetime performance that tantalum (Ta) based qubits have demonstrated to date, the majority of superconducting qubit systems, including Ta-based qubits, are generally believed to have uncontrolled surface oxidation as the primary source of the two-level system loss in two-dimensional transmon qubits. Therefore, atomic-scale insight into the surface oxidation process is needed to make progress toward a practical quantum processor. Here, in this study, the surface oxidation mechanism of native Ta films and its potential impact on the lifetime of superconducting qubits were investigated using advanced scanning transmission electron microscopy (STEM) techniques combined with density functional theory calculations. The results suggest an atomistic model of the oxidized Ta(110) surface, showing that oxygen atoms tend to penetrate the Ta surface and accumulate between the two outermost Ta atomic planes; oxygen accumulation at the level exceeding a 1:1 O/Ta ratio drives disordering and, eventually, the formation of an amorphous Ta 2 O 5 phase. In addition, we discuss how the formation of a noninsulating ordered TaO 1–δ (δ < 0.1) suboxide layer could further contribute to the losses of superconducting qubits. Subsurface oxidation leads to charge redistribution and electric polarization, potentially causing quasiparticle loss and decreased current-carrying capacity, thus affecting superconducting qubit coherence. The findings enhance the comprehension of the realistic factors that might influence the performance of superconducting qubits, thus providing valuable guidance for the development of future quantum computing hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unconventional Charge Transport in MgCr 2 O 4 and Implications for Battery Intercalation Hosts

Ion transport in solid-state cathode materials prescribes a fundamental limit to the rates batteries can operate; therefore, an accurate understanding of ion transport is a critical missing piece to enable new battery technologies, such as magnesium batteries. Based on our conventional understanding of lithium-ion materials, MgCr 2 O 4 is a promising magnesium-ion cathode material given its high capacity, high voltage against an Mg anode, and acceptable computed diffusion barriers. Electrochemical examinations of MgCr 2 O 4 , however, reveal significant energetic limitations. Motivated by these disparate observations; herein, we examine long-range ion transport by electrically polarizing dense pellets of MgCr 2 O 4 . Our conventional understanding of ion transport in battery cathode materials, e.g., Nernst-Einstein conduction, cannot explain the measured response since it neglects frictional interactions between mobile species and their nonideal free energies. In this work, we propose an extended theory that incorporates these interactions and reduces to the Nernst-Einstein conduction under dilute conditions. This theory describes the measured response, and we report the first study of long-range ion transport behavior in MgCr 2 O 4 . We conclusively show that the Mg chemical diffusivity is comparable to lithium-ion electrode materials, whereas the total conductivity is rate-limiting. Given these differences, energy storage in MgCr 2 O 4 is limited by particle-scale voltage drops, unlike lithium-ion particles that are limited by concentration gradients. Future materials design efforts should consider the interspecies interactions described in this extended theory, particularly with respect to multivalent-ion systems and their resultant effects on continuum transport properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Nanoengineering room temperature ferroelectricity into orthorhombic SmMnO 3 films

Orthorhombic R MnO 3 ( R = rare-earth cation) compounds are type-II multiferroics induced by inversion-symmetry-breaking of spin order. They hold promise for magneto-electric devices. However, no spontaneous room-temperature ferroic property has been observed to date in orthorhombic R MnO 3 . Here, using 3D straining in nanocomposite films of (SmMnO 3 ) 0.5 ((Bi,Sm) 2 O 3 ) 0.5 , we demonstrate room temperature ferroelectricity and ferromagnetism with T C,FM ~ 90 K, matching exactly with theoretical predictions for the induced strain levels. Large in-plane compressive and out-of-plane tensile strains (-3.6% and +4.9%, respectively) were induced by the stiff (Bi,Sm) 2 O 3 nanopillars embedded. The room temperature electric polarization is comparable to other spin-driven ferroelectric R MnO 3 films. Also, while bulk SmMnO 3 is antiferromagnetic, ferromagnetism was induced in the composite films. The Mn-O bond angles and lengths determined from density functional theory explain the origin of the ferroelectricity, i.e. modification of the exchange coupling. Our structural tuning method gives a route to designing multiferroics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Deconvolution of X-ray natural and magnetic circular dichroism in chiral Dy-ferroborate

Structural chirality and magnetism, when intertwined, can have profound implications on materials properties. Using X-ray imaging and spectroscopic measurements that leverage the natural and magnetic circular dichroic effects present in magnetized chiral crystal structures, we probe the interplay between chirality and magnetism across the field-induced spin-flop transition of Dy ferroborate, DyFe 3 (BO 3 ) 4 . Deconvolution of natural and magnetic circular dichroic signals at the Fe K and Dy L 2,3 absorption edges of the non-centrosymmetric structure was enabled by use of tunable temperature and magnetic field, providing access to element-specific magnetic information across the spin-flop transition. The magnetic response of Fe and Dy sublattices was found to be independent of domain chirality. The chiral domains were robust against both the (chirality preserving) R32 to P3 1 21/P3 2 21 structural phase transition at 280 K, and application of magnetic field up to 4 Tesla. A third flavor of X-ray dichroism, magneto-chiral dichroism, was not detected within the accuracy of our measurements. The absence of significant Fe magnetization along the screw, c-axis for the magnetic field strength used in this study, together with non-linear coupling of magnetic field to electric polarization across the spin-flop transition, may hinder observation of magneto-chiral dichroic effects in this system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Pressure-tuned plethora of ferroelectric phases in CuInP 2 S 6

Layered chalcogenides like CuInP 2 S 6 are room temperature ferroelectrics. Modest compression even increases the electric polarization, raising questions about the origin of this unusual trend and other properties under pressure. In this work, we combine synchrotron-based infrared and Raman scattering spectroscopies, x-ray diffraction, and resistivity measurements with first-principles calculations of the lattice dynamics and energy landscape to unravel the influence of pressure on symmetry, polarization, and metallicity. We uncover a remarkable series of phase transitions across a series of polar space groups: monoclinic Cc → trigonal P31c (prismatic sulfur) → P31c (octahedral sulfur). True metallicity develops above 63 GPa, significantly higher than in related MPS 3 materials (M = Mn, Co, Fe, Ni), offering a picture of competing states of matter that is different than previously supposed. Detailed examination of pressure trends within the Cc phase also reveals phonon lifetime changes and streaking of satellite x-ray peaks that correlate with the maximum polarization. We discuss these tendencies in terms of Cu + ion migration, phase formation, and the overall energy landscape. Our findings place the high pressure behavior of CuInP 2 S 6 on a firm foundation and pave the way for the development of structure-property relations in this family of complex chalcogenides.

ferroelectric phases↗
DOE OSTI2020

An intriguing intermediate state as a bridge between antiferroelectric and ferroelectric perovskites

The configuration of electric or magnetic dipoles embedded into a crystal lattice gives rise to the defining physical properties of a functional material. The prevailing antiferroelectric materials have so far been allusively assumed to be in a strict antiparallel electric polarization configuration, although they have shown huge potential applications for use in electronic devices. Herein, we have revealed for the first time the complex crystal structure of an intermediate state between the two conventional antiferroelectric (AFE) and ferroelectric (FE) states in PbZrO 3 -based perovskites by employing a combination of advanced synchrotron X-ray, neutron and three-dimensional (3D) electron diffraction techniques. We found that the intermediate state displays an intriguing flexible configuration of a sinusoidal wave functional with imbalanced polarization, different to the commonly believed antiparallel and balanced polarization. Such an intermediate state was concluded to act as a bridge between the conventional AFE and FE states. Our observations offer new insight into the AFE state and its transformation into the FE state. Such an intermediate state with a unique polarization configuration is believed to be a common feature that occurs in high-performance AFE perovskite materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Entangled core/shell magnetic structure driven by surface magnetic symmetry-breaking in Cr 2 O 3 nanoparticles

Bulk Cr 2 O 3 is an antiferromagnetic (AFM) oxide that exhibits the magnetoelectric effect at room temperature, with neither spontaneous magnetization nor net electric polarization. These physical properties stem from a subtle competition between exchange and crystal field interactions. In this article, we exploit the symmetry breaking at the surface of Cr 2 O 3 nanoparticles for unbalancing this delicate physical equilibrium. The emerging weak ferromagnetic signal we observe persists up to near room temperature (≈ 270 K) at which the antiferromagnetic order disappears. In addition, an exchange-bias effect, that rapidly decreases on heating from low temperature up to 30 K, is resistant to thermal disorder above 200 K. In conclusion, our findings point to the possible formation of an entangled core/shell magnetic structure, where pinned uncompensated spins at the shell are randomly distributed in a low-temperature spin-glass ordering, with low net magnetic moment and an ordering temperature governed by the AFM Néel temperature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Spectroscopic evidence of intra-unit-cell charge redistribution in a charge-neutral magnetic topological insulator

The magnetic topological insulator MnBi 6 Te 10 has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal an intra-unit-cell charge redistribution even when the overall doping suggests a near-charge-neutral condition. By performing time- and angle-resolved photoemission spectroscopy (trARPES) on the optimally 18% Sb-doped MnBi 6 Te 10 , we observe transient surface photovoltage (SPV) effects on both the MnBi 2 Te 4 and single-Bi 2 Te 3 terminations. Furthermore, we observe a time-dependent splitting of the band structure indicating multiple SPV shifts with different magnitudes. This observation suggests that adjacent plateaus with nominally the same terminating layer exhibit a strong intra-unit-cell charge redistribution, resulting in spontaneous electrical polarization. This is consistent with static micro-ARPES measurements revealing significant doping deviations from the charge-neutral configuration. Our findings underscore the challenges of engineering the family of Mn-Bi-Te materials to realize QAHE purely through chemical doping. Achieving the desired topological quantum phase requires both a uniform carrier doping and a ferromagnetic ground state. Furthermore, the light-induced polarization within each unit cell of ferromagnetic Mn(Bi 0.82 Sb 0.18 ) 6 Te 10 may open new possibilities for optoelectronic and spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al 0.7 Sc 0.3 N

Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al 0.7 Sc 0.3 N film on the W/c-sapphire substrate is 0.4±0.3 MV cm -1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiO x /SiO 2 /Si substrate, attributed to the 0.01±0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2026

Generalization of Stoney’s equation for flexoelectric thin films on elastic substrates

When a thin film is deposited on an incompatible elastic substrate, the film develops an elastic mismatch strain, causing the film–substrate system to bend. Stoney’s equation relates the curvature of the bent film–substrate system with the residual stress developed in the film, and can be used to infer film properties from curvature measurements. Certain materials exhibit electromechanical coupling, such as piezoelectricity and flexoelectricity, which can alter the curvature and strains. In this work, we generalize Stoney’s equation to include flexoelectric and piezoelectric effects in the film. Considering both open and closed circuit configurations, as well as uniform and non-uniform film properties, we compare different cases of electromechanical coupling and discuss their influence on curvature, strains, and electric polarization in the film.

Ghosh, Swarnava [ORNL] (ORCID:0000000338005264)↗
DOE OSTI2020

Negative capacitance regime in ferroelectrics demystified from nonequilibrium molecular dynamics

Negative capacitance regime in ferroelectrics is associated with the negative slope in the dependence of the polarization on electric field and is prohibited by the laws of equilibrium thermodynamics. Very recently, it developed into a controversial but very productive area with a promise for next generation low-power transistors. At least, in part, the controversies arise from the lack of direct experimental insight into the mechanism for such phenomena. Although the experimental insight is, indeed, challenging at present, we probe the effect in ferroelectric PbTiO 3 bulk and a thin film with realistic first-principles-based nonequilibrium molecular dynamics simulations which model most closely experimental conditions. Here, the following insights emerge from the simulations: (i) the ferroelectric never enters the thermodynamically forbidden region even under extreme rates of electric-field application; (ii) the negative slope naturally arises when the compensating charge is either scarce or slowed down by the external circuitry; (iii) the negative slope is well controlled by the interplay between the applied step pulse field and the amount of the screening charge. The latter can be used to design the negative capacitance regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Metastable piezoelectric group-IV monochalcogenide monolayers with a buckled honeycomb structure

Multiple two-dimensional materials are being naïvely termed stable on the grounds of displaying phonon dispersions with no negative frequencies and of not collapsing on molecular dynamics calculations at fixed volume. But, if these phases do not possess the smallest possible structural energy, how does one understand and establish their actual meta stability? To answer this question, twelve two-dimensional group-IV monochalcogenide monolayers (SiS, SiSe, SiTe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, and PbTe) with a buckled honeycomb atomistic structure—belonging to symmetry group P3m1—displaying an out-of-plane intrinsic electric polarization are shown to be metastable by three independent methods. First, we uncover a coordination-preserving structural transformation from the low-buckled honeycomb structure onto the lower-energy Pnm2 1 (or Pmmn for PbS, PbSe, and PbTe) phase to estimate energy barriers E B that must be overcome during such structural transformation. Using the curvature of the local minima and E B as inputs to Kramers escape formula, large escape times are found, implying the structural metastability of the buckled honeycomb phase (with the exception of PbS and PbSe, these phases display escape times ranging from 700 years to multiple times the age of the universe and can be considered “stable” for practical purposes in that relative sense). The second demonstration is provided by phonon dispersion relations that include the effect of long-range Coulomb forces and display no negative vibrational modes. The third and final demonstration of structural metastability is furnished by room-temperature ab initio molecular dynamics for selected compounds. Here, the magnitude of the electronic band gap evolves with chemical composition. Different from other binary two-dimensional compounds such as transition metal dichalcogenide monolayers and hexagonal boron nitride monolayers which only develop an in-plane piezoelectric response, the twelve group-IV monochalcogenide monolayers with a buckled honeycomb structure also display out-of-plane piezoelectric properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗