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Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations
The problem of epitaxial graphene formed on a semiconductor substrate is considered in the context of the extended Hubbard and Holstein–Hubbard models for electron–electron and electron–phonon interactions. The Haldane–Anderson model is chosen for the density of states of the substrate. Three regions of the phase diagram, specifically, spin- and charge-density waves and a spin- and charge-homogeneous paramagnetic state are considered. For a number of special cases used as examples, the similarities and differences of the electron states of graphene on semiconductor and metal substrates are demonstrated. It is shown that the main difference arises, if the Dirac point of graphene lies within the band gap of the semiconductor. Numerical estimations are performed for a SiC substrate.
Electron-helium and electron-neon scattering cross sections at low electron energies using a photoelectron source
Absolute electron-helium and electron-neon scattering cross sections have been measured at low electron energies using the powerful technique of photoelectron spectroscopy. The measurements have been carried out at 17 electron energies varying from 0.7 to 10 eV with an accuracy of + or - 2.7 percent. The results obtained in the present work have been compared with other recent measurement and calculations.
Substituent effects in a series of 1,7-C[subscript 60](R[subscript F])[subscript 2] compounds (R[subscript F] = CF[subscript 3], C[subscript 2]F[subscript 5], n-C[subscrip 3]F[subscript 7], i-C[subscript 3]F[subscript 7], n-C[subscript 4]F[subscript 9], s-C[subscript 4]F[subscript 9], n-C[subscript 8]F[subscript 17]): electron affinities, reduction potentials and E(LUMO) values are not always correlated
A series of seven structurally-similar compounds with different pairs of R{sub F} groups were prepared, characterized spectroscopically, and studied by electrochemical methods (cyclic and square-wave voltammetry), low-temperature anion photoelectron spectroscopy, and DFT calculations (five of the compounds are reported here for the first time). This is the first time that a set of seven R{sub F} groups have been compared with respect to their relative effects on E{sub 1/2}(0/-), electron affinity (EA), and the DFT-calculated LUMO energy. The compounds, 1,7-C{sub 60}(R{sub F}){sub 2} (R{sub F} = CF{sub 3}, C{sub 2}F{sub 5}, i-C{sub 3}F{sub 7}, n-C{sub 3}F{sub 7}, s-C{sub 4}F{sub 9}, n-C{sub 4}F{sub 9} and n-C{sub 8}F{sub 21}), were found to have statistically different electron affinities (EA), at the {+-}10 meV level of uncertainty, but virtually identical first reduction potentials, at the {+-}10 mV level of uncertainty. The lack of a correlation between EA and E{sub 1/2}(0/-), and between E(LUMO) and E{sub 1/2}(0/-), for such similar compounds is unprecedented and suggests that explanations for differences in figures of merit for materials and/or devices that are based on equating easily measurable E{sub 1/2}(0/-) values with EAs or E(LUMO) values should be viewed with caution. The solubilities of the seven compounds in toluene varied by nearly a factor of six, but in an unpredictable way, with the C{sub 2}F{sub 5} and s-C{sub 4}F{sub 9} compounds being the most soluble and the i-C{sub 3}F{sub 7} compound being the least soluble. The effects of the different R{sub F} groups on EAs, E(LUMO) values, and solubilities should help fluorine chemists choose the right R{sub F} group to design new materials with improved morphological, electronic, optical, and/or magnetic properties.
Three-Dimensional Quantitative Chemical Roughness Of Buried ZrO2/In2O3 Interfaces Via Energy-Filtered Electron Tomography
The protocol to calculate the chemical roughness from three-dimensional (3-D) data cube acquired by energy-filtered electron tomography has been developed and applied to analyze the 3-D Zr distribution at the arbitrarily shaped interfaces in the ZrO2/In2O3 multilayer films. The calculated root-mean-square roughness quantitatively revealed the chemical roughness at the buried ZrO2/In2O3 interfaces, which is the deviation of Zr distribution from the ideal flat interface. Knowledge of the chemistry and structure of oxide interfaces in 3-D provides information useful for understanding changes in the behavior of a model ZrO2/In2O3 heterostructure that has potential to exhibit mixed conduction behavior. VC 2012 American Institute of Physics.
Time resolved electron microscopy for in situ experiments
Transmission electron microscopy has functioned for decades as a platform for in situ observation of materials and processes with high spatial resolution. Yet, the dynamics often remain elusive, as they unfold too fast to discern at these small spatial scales under traditional imaging conditions. Simply shortening the exposure time in hopes of capturing the action has limitations, as the number of electrons will eventually be reduced to the point where noise overtakes the signal in the image. Pulsed electron sources with high instantaneous current have successfully shortened exposure times (thus increasing the temporal resolution) by about six orders of magnitude over conventional sources while providing the necessary signal-to-noise ratio for dynamic imaging. We describe here the development of this new class of microscope and the principles of its operation, with examples of its application to problems in materials science.
Pressure-induced changes in the electron density distribution in [alpha]-Ge near the [alpha-beta] transition
Abstract not provided
Fast and efficient charge breeding of the Californium rare isotope breeder upgrade electron beam ion source
The Electron Beam Ion Source (EBIS), developed to breed Californium Rare Isotope Breeder Upgrade (CARIBU) radioactive beams at Argonne Tandem Linac Accelerator System (ATLAS), is being tested off-line. A unique property of the EBIS is a combination of short breeding times, high repetition rates, and a large acceptance. Overall, we have implemented many innovative features during the design and construction of the CARIBU EBIS as compared to the existing EBIS breeders. The off-line charge breeding tests are being performed using a surface ionization source that produces singly charged cesium ions. The main goal of the off-line commissioning is to demonstrate stable operation of the EBIS at a 10 Hz repetition rate and a breeding efficiency into single charge state higher than 15%. These goals have been successfully achieved and exceeded. We have measured (20% ± 0.7%) breeding efficiency into the single charge state of 28+ cesium ions with the breeding time of 28 ms. In general, the current CARIBU EBIS operational parameters can provide charge breeding of any ions in the full mass range of periodic table with high efficiency, short breeding times, and sufficiently low charge-to-mass ratio, 1/6.3 for the heaviest masses, for further acceleration in ATLAS. In this study, we discuss the parameters of the EBIS and the charge breeding results in a pulsed injection mode with repetition rates up to 10 Hz.
Mechanism of generating fast electrons by an intense laser at a steep overdense interface
The acceleration and heating of electrons by an intense laser normally incident on a steep overdense plasma interface is investigated using the particle-in-cell code osiris. Energetic electrons are generated by the laser's electric field in the vacuum region within {lambda}/4 of the surface. Only those electrons which originate within the plasma with a sufficiently large transverse momentum can escape the plasma. This mechanism relies on the standing wave structure created by the incoming and reflected wave and is therefore very different for linear and circularly polarized light.
Calibration and data collection protocols for reliable lattice parameter values in electron pair distribution function (ePDF) studies
We explore and describe different protocols for calibrating electron pair distribution function (ePDF) measurements for quantitative studies on nano-materials. We find the most accurate approach to determine the camera-length is to use a standard calibration sample of Au nanoparticles from National Institute of Standards and Technology. Different protocols for data collection are also explored, as are possible operational errors, to find the best approaches for accurate data collection for quantitative ePDF studies.
Use of Grid-Forming Medium-Voltage Power Electronics Hub in a Microgrid Setting
This paper presents the application of a new design of a multiport, modular, medium-voltage power electronics hub (M3PE-HUB) in a microgrid setting. The M3PE-HUB system was modeled in a digital real-time simulator (DRTS) and integrated into the Banshee microgrid test system. This paper presents the preliminary DRTS simulation-based results of the M3PE-HUB system connected in a test microgrid system. Verification and validation of the M3PE-HUB architecture and controls in the test microgrid setting are the primary contributions of this work. The results of the operation during the islanding and resynchronization process indicate the feasibility of the proposed architecture in a microgrid setting. This paper also presents results for a system reconfiguration use case where the M3PE-HUB was used to reconfigure the system under a fault condition.
Self-Discharge and its Prevention: Direct Visualization through In-Situ Electrochemical Scanning Transmission Electron Microscopy.
Abstract not provided.
In Situ X-ray Absorption Fine Structure Studies on the Effect of pH on Pt Electronic Density during Aqueous Phase Reforming of Glycerol
Abstract not provided
Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy
Not Available
Compact X-ray Free-Electron Laser from a Laser-Plasma Accelerator Using a Transverse-Gradient Undulator
Not Available
Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure
Here, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr{sub 2}S{sub 3}) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr{sub 2}S{sub 3} near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7–15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr{sub 2}S{sub 3} based applications under extreme conditions.