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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Observations of Glide and Decomposition of a<101> Dislocations at High Temperatures in Ni-Al Single Crystals Deformed along the Hard Orientation

Ni-44at.% Al and Ni-50at.% single crystals were tested in compression in the hard (001) orientations. The dislocation processes and deformation behavior were studied as a function of temperature, strain and strain rate. A slip transition in NiAl occurs from alpha(111) slip to non-alphaaaaaaaaaaa9111) slip at intermediate temperatures. In Ni-50at.% Al single crystal, only alpha(010) dislocations are observed above the slip transition temperature. In contrast, alpha(101)(101) glide has been observed to control deformation beyond the slip transition temperature in Ni-44at.%Al. alpha(101) dislocations are observed primarily along both (111) directions in the glide plane. High-resolution transmission electron microscopy observations show that the core of the alpha(101) dislocations along these directions is decomposed into two alpha(010) dislocations, separated by a distance of approximately 2nm. The temperature window of stability for these alpha(101) dislocations depends upon the strain rate. At a strain rate of 1.4 x 10(exp -4)/s, lpha(101) dislocations are observed between 800 and 1000K. Complete decomposition of a alpha(101) dislocations into alpha(010) dislocations occurs beyond 1000K, leading to alpha(010) climb as the deformation mode at higher temperature. At lower strain rates, decomposition of a alpha(101) dislocations has been observed to occur along the edge orientation at temperatures below 1000K. Embedded-atom method calculations and experimental results indicate that alpha(101) dislocation have a large Peieris stress at low temperature. Based on the present microstructural observations and a survey of the literature with respect to vacancy content and diffusion in NiAl, a model is proposed for alpha(101)(101) glide in Ni-44at.%Al, and for the observed yield strength versus temperature behavior of Ni-Al alloys at intermediate and high temperatures.

Srinivasan, R.↗
DOE OSTI2022

Hydrogen induced dislocation core reconstruction in bcc tungsten

Dislocation, playing a crucial role in the plastic deformation of metals, can be significantly affected by introducing solute elements. Hydrogen (H) embrittlement is one such example, while the underlying mechanism for H affected dislocation structural stability and mobility remains unclear and the role of H has been controversial. Here, using first-principles calculations, we demonstrate that the effect of H on screw dislocation in bcc tungsten (W) is H concentration-dependent, signified by a H-induced transition of SD core structure. At low concentrations of H segregation, dislocation maintains the intrinsic easy-core structure, and H atoms are attached to the “periphery” of dislocation to enhance dislocation motion. In contrast, at high H concentrations, dislocation transforms into a hard-core, metal hydride-like structure, as H atoms become the “body” of dislocation to significantly reduce the dislocation mobility in W. Further, such local easy-to-hard transition can also be induced by the other solutes, including helium, carbon, nitrogen and oxygen. Our work sheds new light on the H-dislocation interactions in bcc W, having broad implications in the interstitial solute-related phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Modal analysis of dislocation vibration and reaction attempt frequency

Transition state theory is a fundamental approach for temporal coarse-graining. It estimates the reaction rate for a transition processes by quantifying the activation free energy and attempt frequency for the unit process. To calculate the transition rate of a gliding dislocation, the attempt frequency is often obtained from line tension estimates of dislocation vibrations, a highly simplified model of dislocation behavior. This work revisits the calculation of attempt frequency for a dislocation bypassing an obstacle, in this case a self-interstitial atom (SIA) loop. First, a direct calculation of the vibrational characteristics of a finite pinned dislocation segment is compared to line tension estimates before moving to the more complex case of dislocation-obstacle bypass. The entropic factor associated with the attempt frequency is calculated for a finite dislocation segment and for an infinite glide dislocation interacting with an SIA loop. Lastly, it is found to be dislocation length independent for three cases of dislocation-self interstitial atom (SIA) loop interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of dislocation structures in an additively manufactured austenitic stainless steel 316L

In this experiment, the origin of dislocation structures in AM stainless steels was systematically investigated by controlling the effect of thermal stress through geometric constraints for the first time. Stainless steel 316L parts were produced in the form of “1D” rods, “2D” walls, and "3D" rectangular prisms to evaluate the effect of constraints to thermal expansion/shrinkage on the development of defect microstructures and to elucidate the origin of additively manufactured (AM) dislocation microstructures. Dislocation density, organization, chemical micro-segregation, precipitate structures, and misorientations were analyzed as a function of increasing constraints around solidifying material in 1D, 2D, and 3D components built using both directed energy deposition (DED) and powder-bed selective laser melting (SLM). In DED parts, the dislocation density was not dependent on local misorientations or micro-segregation patterns, but evolved from approximately ρ ⊥ = 10 12 m -2 in 1D parts to ρ ⊥ = 10 14 m -2 in 3D parts, indicating that it is primarily thermal distortions that produce AM dislocation structures. In DED 3D parts and SLM parts, dislocation densities were highest (ρ ⊥ ≈ 10 14 m -2 ) and corresponded to the formation of dislocation cells approximately 300-450 nm in diameter. Dislocation cells overlapped with dendrite micro-segregation in some but not all cases. The results illustrate that dendritic micro-segregation, precipitates, or local misorientations influence how the dislocations organize during processing, but are not responsible for producing the organized cell structures. Furthermore, this work shows that AM dislocation structures originate due to thermal distortions during printing, which are primarily dictated by constraints surrounding the melt pool and thermal cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Laser shock peening effect on the dislocation transitions and grain refinement of Al–Mg–Si alloy

This paper systematically investigates the effect of laser shock peening without coating parameters on the microstructural evolution, and dislocation configurations induced by ultra-high plastic strains and strain rates. Based on an analysis of optical microscopy, polarized light microscopy, transmission electron microscopy observations and residual stress analysis, the significant influence of laser shock peening parameters due to the effect of plasma generation and shock wave propagation has been confirmed. Although the optical microscopy results revealed no significant microstructural changes after laser shock peening, i.e. no heat effect zone and differences in the distribution of second-phase particles, expressive influence of laser treatment parameters on the laser shock induced craters was confirmed. Moreover, polarized light microscopy results have confirmed the existence of well-defined longish grains up to 455 μm in length in the centre of the plate due to the rolling effect, and randomly oriented smaller grains (20 μm × 50 μm) in the surface due to the static recrystallization effect. Laser shock peening is reflected in an exceptional increase in dislocation density with various configurations, i.e. dislocation lines, dislocation cells, dislocation tangles, and the formation of dense dislocation walls. More importantly, the microstructure is considerably refined due to the effect of strain deformations induced by laser shock peening process. The results have confirmed that dense dislocation structures during ultra-high plastic deformation with the addition of shear bands producing ultra-fine (60–200 nm) and nano-grains (20–50 nm). Furthermore, dislocation density was increased by a factor of 2.5 compared to the untreated material (29 × 10{sup 13} m{sup −2} vs. 12 × 10{sup 13} m{sup −2}). - Highlights: • LSPwC imparts high compressive residual stresses up to − 362 ± 31 MPa. • After LSPwC the microstructure is considerably refined via dislocation transitions. • Results confirmed ultra-fine (60–200 nm) and nano-grains (20–50 nm) after LSPwC. • Reasonable agreements between dislocation density and residual stress are obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Characterizing dislocation configurations and their evolution during creep of a new 12% Cr steel

Highlights: • Applicability of different techniques to characterize particular dislocation configuration. • XRD models in combination with TEM and EBSD to measure the dislocation density. • Substructure evolution during creep of a new 12% Cr steel is discussed. - Abstract: In this research, different types of dislocations are characterized and quantified in a newly developed 12% Cr steel in as-received as well as in crept conditions. X-ray diffraction (XRD) patterns are analyzed using three different models. The dislocation densities are determined employing the Convolution Multiple Whole Profile (CMWP) fitting, the analysis of the asymptotic part of the X-ray line profile (Groma's method), and the Rietveld refinement coupling Popa's and Williamson-Smallman approaches. CMWP method is used to measure the internal dislocation density inside the subgrains consisting of mobile and dipole dislocations, and the results show good agreement with Transmission Electron Microscopy (TEM) measurements. Groma's method is used to evaluate the total dislocation density, with results comparable to those obtained from the combination of Electron Backscatter Diffraction (EBSD) and TEM. Rietveld method gives the internal dislocation density or mobile dislocation density depending on the model chosen. The experimentally determined results such as creep strain, dislocation densities and subgrain size are compared with theoretical predictions and they are found in good agreement.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dynamics and Removal Pathway of Edge Dislocations in Imperfectly Attached PbTe Nanocrystal Pairs: Toward Design Rules for Oriented Attachment

Using in situ high-resolution TEM, we study the structure and dynamics of well-defined edge dislocations in imperfectly attached PbTe nanocrystals. In this work, we identify that attachment of PbTe nanocrystals on both {100} and {110} facets gives rise to b = a/2&lang;110&rang; edge dislocations. Based on the Burgers vector of individual dislocations, we can identify the glide plane of the dislocations. We observe that defects in particles attached on {100} facets have glide planes that quickly intersect the surface, and HRTEM movies show that the defects follow the glide plane to the surface. For {110} attached particles, the glide plane is collinear with the attachment direction, which does not provide an easy path for the dislocation to reach the surface. Indeed, HRTEM movies of dislocations for {110} attached particles show that defect removal is much slower. Further, we observe conversion from pure edge dislocations in imperfectly attached particles to dislocations with mixed edge and screw character, which has important implications for crystal growth. Lastly, we observe that dislocations initially closer to the surface have a higher speed of removal, consistent with the strong dislocation free surface attractive force. Our results provide important design rules for defect-free attachment of preformed nanocrystals into epitaxial assemblies.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se{sub 2} thin films

Thin-film solar cells based on Cu(In,Ga)Se{sub 2} (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 10{sup 10}–10{sup 11} cm{sup −2}. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Dynamics of threading dislocations in porous heteroepitaxial GaN films

Behavior of threading dislocations in porous heteroepitaxial gallium nitride (GaN) films has been studied using computer simulation by the two-dimensional discrete dislocation dynamics approach. A computational scheme, where pores are modeled as cross sections of cylindrical cavities, elastically interacting with unidirectional parallel edge dislocations, which imitate threading dislocations, is used. Time dependences of coordinates and velocities of each dislocation from dislocation ensembles under investigation are obtained. Visualization of current structure of dislocation ensemble is performed in the form of a location map of dislocations at any time. It has been shown that the density of appearing dislocation structures significantly depends on the ratio of area of a pore cross section to area of the simulation region. In particular, increasing the portion of pores surface on the layer surface up to 2% should lead to about a 1.5-times decrease of the final density of threading dislocations, and increase of this portion up to 15% should lead to approximately a 4.5-times decrease of it.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Mobility of twinning dislocations in copper up to supersonic speeds

Understanding the mobility of twinning dislocations is important for multiscale modeling of crystal plasticity, especially at high strain rates, where such dislocations may reach transonic or supersonic speeds. Here, we used molecular dynamics simulations to investigate the relationship between dislocation velocity and the applied resolved shear stress of an edge twinning dislocation in copper up to supersonic speeds. The twinning dislocation mobility relation is composed of two branches separated by a band of forbidden velocities. The lower velocity branch is limited by the first transverse sound speed ~2000 m/s while the upper branch stretches from ~3500 m/s in the transonic regime to supersonic velocities. Twinning dislocations cannot undergo uniform steady-state motion at velocities within the forbidden band. Our simulation results also reveal that edge twinning dislocation motion in copper is kink-mediated. We discuss the implications of our findings for the motion of twins, twinning dislocations, and twinning dislocation kinks in copper.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Shear stress- and line length-dependent screw dislocation cross-slip in FCC Ni

Screw dislocation cross-slip is important in dynamic recovery of deformed metals. A mobile screw dislocation segment can cross slip to annihilate an immobile screw dislocation segment with opposite Burgers vector, leaving excess dislocations of one kind in a crystal. Previous studies have found that the cross-slip process depends on both the local stress state and dislocation line length, yet a quantitative study of the combined effects of these two factors has not been conducted. In this work, we employ both dynamic concurrent atomistic-continuum (CAC) [L. Xiong, G. Tucker, D.L. McDowell, Y. Chen, J. Mech. Phys. Solids 59 (2011) 160–177] and molecular dynamics simulations to explore the shear stress- and line length-dependent screw dislocation cross-slip in face-centered cubic Ni. It is demonstrated that the CAC approach can accurately describe the 3-D cross-slip process at a significantly reduced computational cost, as a complement to other numerical methods. In particular, we show that the Fleischer (FL) [R.L. Fleischer, Acta Metall. 7 (1959) 134–135] type cross-slip, in which a stair-rod dislocation is involved, can be simulated in the coarse-grained domain. Our simulations show that as the applied shear stress increases, the cross-slip mechanism changes from the Friedel-Escaig (FE) [B. Escaig, J. Phys. 29 (1968) 225–239] type to the FL type. In addition, the critical shear stress for both cross-slip mechanisms depends on the dislocation line length. Moreover, the cross-slip of a screw dislocation with a length of 6.47 nm analyzed using periodic boundary conditions occurs via only the FL mechanism, whereas a longer dislocation with length of 12.94 nm can cross-slip via either the FE or FL process in Ni subject to different shear stresses.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Misfit dislocation patterns of Mg-Nb interfaces

The role of heterogeneous interfaces in improving mechanical properties of polycrystalline aggregates and laminated composites has been well recognized with interface structure being of fundamental importance in designing composites containing multiple interfaces. In this paper, taking the Mg (hexagonal close-packed (hcp))/Nb (body-centered cubic (bcc)) interface as an example, we develop Mg-Nb interatomic potentials for predicting atomic configurations of Mg/Nb interfaces. We systematically characterize interface dislocations of Mg/Nb interfaces with Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) orientation relationships and propose a generalized procedure of characterizing interface structure by combining atomistic simulation and interface dislocation theory, which is applicable for not only hcp/bcc interfaces, but also other systems with complicated interface dislocation configurations.Here, in Mg/Nb, interface dislocation networks of two types of interfaces are significantly different although they originate from partial dislocations of similar character: the NW interface is composed of three sets of partial dislocations, while the KS interface is composed of four sets of interface dislocations - three sets of partial dislocations and one set of full dislocations that forms from the reaction of two close partial dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A data driven approach for cross-slip modelling in continuum dislocation dynamics

Cross-slip is a thermally activated process by which screw dislocation changes its glide plane to another slip plane sharing the same Burgers vector. The rate at which this process happens is determined by a Boltzmann type expression that is a function of the screw segment length and the stress acting on the dislocation. In continuum dislocation dynamics (CDD), the information regarding the length of the screw dislocation segment and local stress state on dislocations are lost due to the coarse-grained representation of the density. Here, in this work, a data driven approach to characterize the lost information by analyzing the discrete dislocation configurations is proposed to enable cross-slip modeling in the CDD framework in terms of the coarse-grained dislocation density and stress fields. The analysis showed that the screw segment length follows an exponential distribution, and the stress fluctuations, defined as the difference between the stress on the dislocations and the mean field stress in CDD, follows a Lorentzian distribution. A novel approach for cross slip implementation in CDD employing the screw segment length and stress fluctuation statistics was proposed and rigorously tested by comparing the CDD cross-slip rates with discrete dislocation dynamics (DDD) rates. This approach has been applied in conjunction with three cross-slip models used in DDD simulations differing mainly in the functional form of cross slip activation energy. It was found that different cross-slip activation energy formulations yielded different cross-slip rates, yet the effect on mechanical stress-strain response and dislocation density evolution was minimal for the [001] type loading.

42 ENGINEERING↗
DOE OSTI2015

Probing the character of ultra-fast dislocations

Plasticity is often controlled by dislocation motion, which was first measured for low pressure, low strain rate conditions decades ago. However, many applications require knowledge of dislocation motion at high stress conditions where the data are sparse, and come from indirect measurements dominated by the effect of dislocation density rather than velocity. Here we make predictions based on atomistic simulations that form the basis for a new approach to measure dislocation velocities directly at extreme conditions using three steps: create prismatic dislocation loops in a near-surface region using nanoindentation, drive the dislocations with a shockwave, and use electron microscopy to determine how far the dislocations moved and thus their velocity at extreme stress and strain rate conditions. We report on atomistic simulations of tantalum that make detailed predictions of dislocation flow, and find that the approach is feasible and can uncover an exciting range of phenomena, such as transonic dislocations and a novel form of loop stretching. Furthermore, the simulated configuration enables a new class of experiments to probe average dislocation velocity at very high applied shear stress.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

We present site-coincident imaging of a high dislocation density boron-doped chemical vapor deposition-grown homoepitaxial (001) diamond film using electron channeling contrast imaging (ECCI), cathodoluminescence, transmission electron microscopy (TEM), and scanning secondary ion mass spectroscopy (SIMS). With growing interest in large area heteroepitaxial substrates, we show that ECCI is a promising technique to accurately evaluate dislocations in diamond films. We find the electron backscatter yield is sufficient to distinguish individual threading dislocations in ECCI despite the low atomic number of carbon, and we have generally good agreement between dislocations observed in ECCI and TEM of the same region. Importantly, relying on luminescence in the 430 nm dislocation-related A-band alone results in an underestimation of the defect density as we find only 20%–40% of the threading dislocations luminesce. Here, we further show that dislocations do not perturb the spatial uniformity of boron doping measured by SIMS, even when the dislocations are clustered with high density, and we can tentatively rule out strong segregation effects at the dislocations. Our results establish the complementary use of microscopy and microanalysis methods to rapidly characterize and understand the impact of dislocations in diamond thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Polarization near dislocation cores in SrTiO 3 single crystals: The role of flexoelectricity

Spontaneous polarization as large as ~28 μC/cm 2 was recently observed around the dislocation cores in non-polar SrTiO 3 bulk crystals, and its origin was attributed to the flexoelectric effect, i.e., polarization induced by strain gradients. However, the roles of flexoelectricity, relative to other electromechanical contributions, and the nature of dislocations, i.e., edge vs screw dislocations in the induced polarization, are not well understood. In this work, we study the role of flexoelectricity in inducing polarization around three types of dislocation cores in SrTiO 3 : b= a(100) edge dislocation, b= a(110) edge dislocation, and b= a(010) screw dislocation, where b is the Burgers vector. For the edge dislocations, polarization can be induced by electrostriction alone, while flexoelectricity is essential for stabilizing the symmetric polarization pattern. The shear component of the flexoelectric tensor has a dominant effect on the magnitude and spatial distribution of the flexoelectric polarization. In contrast, no polarization is induced around the b= a(010) screw dislocation through either electrostriction or flexoelectricity. Finally, our findings provide an in-depth understanding of the role of flexoelectricity in inducing polarization around dislocation cores and offer insights into the defect engineering of dielectric/ferroelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Atomistic calculations of dislocation core energy in aluminium

A robust molecular-dynamics simulation method for calculating dislocation core energies has been developed. This method has unique advantages: It does not require artificial boundary conditions, is applicable for mixed dislocations, and can yield converged results regardless of the atomistic system size. Utilizing a high-fidelity bond order potential, we have applied this method in aluminium to calculate the dislocation core energy as a function of the angle β between the dislocation line and the Burgers vector. These calculations show that, for the face-centered-cubic aluminium explored, the dislocation core energy follows the same functional dependence on β as the dislocation elastic energy: E c = Asin 2 β + Bcos 2 β, and this dependence is independent of temperature between 100 and 300 K. By further analyzing the energetics of an extended dislocation core, we elucidate the relationship between the core energy and the core radius of a perfect versus an extended dislocation. As a result, with our methodology, the dislocation core energy can accurately be accounted for in models of dislocation-mediated plasticity.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dynamics of interaction between dislocations and point defects in bcc iron

The interaction between dislocations and point defects is crucial for many physical properties and phenomena in materials, such as strengthening mechanisms, dislocation bias and void swelling, creep, and impurity segregation around dislocations. Conventional dislocation-point defect interaction models use approximations based on elasticity theory and/or based on assumptions that transition states energies can be deduced from the binding energies of the defects. In this paper, we present the transport properties of point defects near dislocations based on the actual saddle-point configuration of vacancies and self-interstitial atoms as a function of position with respect to screw and edge dislocations in a model system (bcc iron) using the self-evolving atomistic kinetic Monte Carlo. Here, KMC simulations reveal defect dynamics near dislocations are highly anisotropic and correlated, particularly for dumbbells in the compressive field of the edge dislocation, which could result in zones near dislocation cores where dumbbells are less efficiently absorbed compared with vacancies. This study provides accurate saddle-point configurations and energies required to properly describe the dynamics of point defects around dislocations, allowing fundamental insights on the transport mechanisms which are essential for understanding microstructural evolution and mechanical properties of metallic materials.

36 MATERIALS SCIENCE↗