SEARCH · Engineering Papers

Results for “Diodes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

42 ENGINEERING↗

DOE OSTI2020

System and method for high power diode based additive manufacturing

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

36 MATERIALS SCIENCE↗

DOE OSTI2021

CTE-tuned pyrolytic graphite (PG) substrate to minimize joining stress between laser diode and the substrate

A pyrolytic graphite (PG) substrate and laser diode package includes a substrate body having a PG crystalline structure with a basal plane oriented at a pre-determined orientation angle as measured from a longitudinal axis of a heat generating material, such as a laser diode, mounted on a surface of the PG substrate, so that a coefficient of thermal expansion (CTE) of the PG substrate is substantially matched with a CTE of the material.

Patra, Susant K.↗

DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗

DOE OSTI2023

CTE-tuned pyrolytic graphite (PG) substrate to minimize joining stress between laser diode and the substrate

Patra, Susant↗

DOE OSTI2024

Thermal diode and thermal switch for bi-directional heat transfer in building envelopes

The present disclosure relates to a directional heat transfer using thermal control devices, including a dual phase change thermal diode and an active contact-based thermal switch. The thermal diode includes a positive temperature coefficient switching material and a negative temperature coefficient switching material arranged in series. The thermal switch includes two thermally conducting surfaces which may be moved to contact (i.e., having a distance between them of substantially zero) creating minimal thermal contact resistance. Both thermal control devices may be used to control heat flow into and/or out of a building.

Kishore, Ravi Anant↗

DOE OSTI2023

Diffused trenches for high fill-factor Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes (LGADs) are a class of silicon detectors that have been specifically designed for the fast detection of minimum ionizing particles (mips) in High-Energy Physics experiments. While they provide timing resolution on the order of a few tens of picoseconds, they cannot achieve high spatial resolution due to the intrinsic characteristics of their structures. Thus, active R&D is on-going to develop detectors based on LGADs to improve their spatial resolution while maintaining the timing performance of the LGADs. Such devices are, for example, AC-coupled LGADs and Deep-Junction LGADs. Another device option is the Trench-Isolated LGAD (TI LGAD), where trenches etched at the periphery of the pixels isolate them while providing a high fill-factor. Here, in this paper, we present a variation of this latter approach, demonstrating its feasibility by means of 2-dimensional TCAD simulations.

47 OTHER INSTRUMENTATION↗

DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗

DOE OSTI2022

An intermediate model for fitting triplet–triplet annihilation in phosphorescent organic light emitting diode materials

Triplet–triplet annihilation (TTA) is one of the primary contributors to efficiency roll-off and permanent material degradation in phosphorescent organic light-emitting diodes. Here, the two limiting case models typically used to quantify this quenching mechanism are multi-step Dexter and single-step Förster, which, respectively, assume ideal Fickian diffusion or perfect trapping of triplet excitons. For device-relevant guest doping levels (typically 5–12 vol. %), both significant diffusion of excitons and trapping due to spatial and energetic disorder exist, so neither conventional model fits experimental data well. We develop and validate an intermediate TTA model, which is a weighted average of the limiting cases of pure radiative decay (no TTA) and multi-step Dexter based TTA that returns an effective TTA rate constant and a parameter quantifying the portion of well-isolated excitons. Kinetic Monte-Carlo simulations and time-resolved photoluminescence measurements of an archetype host–guest system demonstrate that our intermediate model provides significantly improved fits with more realistic physical values, is more robust to variations in experimental conditions, and provides an analysis framework for the effects of trapping on TTA.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2025

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗

DOE OSTI2024

Synthesis of Red, Green, and Blue Carbon Quantum Dots and Construction of Multicolor Cellulose-Based Light-Emitting Diodes

Light-emitting diodes (LEDs) are widely used in lighting and display applications. Carbon quantum dots (CQDs), which have high biocompatibility, high resistance to photobleaching, and full-spectrum luminescence, have inherent advantages as fluorescent materials for LED devices. Herein, multicolor CQDs are prepared by a new reagent engineering strategy due to the difference of effective conjugate length and the surface electron-withdrawing groups of CQDs. White CQDs are realized by mixing blue, green, and red CQDs proportionally. Then, the aggregation-caused quenching phenomenon of CQDs is suppressed through the hydrogen-bonding network of cellulose nanofibrils (CNFs). Multicolor fluorescent films are prepared from CQDs and CNFs by simple mixing and casting methods. Finally, thin-film encapsulation based on the photosensitive resin ABPE-10 coating can be realized and rapidly assembles into fluorescent films with different light-emitting colors into LED devices, leading to have superior thermal performance compared with conventional LEDs. White LEDs have excellent white-light illumination performance, with Commission Internationale de L’Eclairage color coordinates of (0.33, 0.37), a correlated color temperature of 5688 K, and a color rendering index of 86. This strategy provides a convenient and scalable pathway for low-cost, environmentally friendly, and high-performance CQDs-based LEDs.

42 ENGINEERING↗

DOE OSTI2021

London Penetration Depth Measurements Using Tunnel Diode Resonators

The London penetration depth λ is the basic length scale for electromagnetic behavior in a superconductor. Precise measurements of λ as a function of temperature, field and impurity scattering have been instrumental in revealing the nature of the order parameter and pairing interactions in a variety of superconductors discovered over the past decades. Here we recount our development of the tunnel-diode resonator technique to measure λ as function of temperature and field in small single crystal samples. Furthermore, we discuss the principles and applications of this technique to study unconventional superconductivity in the copper oxides and other materials such as iron-based superconductors. The technique has now been employed by several groups world-wide as a precision measurement tool for the exploration of new superconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells

Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.

14 SOLAR ENERGY↗

DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Water additives improve the efficiency of violet perovskite light-emitting diodes

High external quantum efficiencies (EQEs) have been achieved for blue, green, red, and near-infrared perovskite light-emitting diodes (PeLEDs), and their energy efficiencies are approaching the efficiencies of III-V-based LEDs. Beyond the visible regime, ultraviolet light offers great promise for many applications such as disinfection. However, PeLEDs demonstrate poor performance in the violet/ultraviolet region, with reports of violet PeLED performance hindered by poor thin-film quality. In this work, we improve the uniformity of perovskite films by adding water into the precursor solution to engineer the crystallization process of spin-coated 2D perovskites. The resulting improved film uniformity, coupled with the reduction in nanoplate size, reduces leakage current and promotes faster recombination rates. The fabricated PeLEDs deliver bright violet emission at 408 nm with a maximum external quantum efficiency of 0.41%, a 5-fold increase over control devices. Furthermore, this work demonstrates viable steps toward cost-effective, efficient ultraviolet PeLEDs.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature

Charge multiplication↗

DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗