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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗

Space station integrated wall damage and penetration damage control. Task 5: Space debris measurement, mapping and characterization system

The procedures and results of a study of a conceptual system for measuring the debris environment on the space station is discussed. The study was conducted in two phases: the first consisted of experiments aimed at evaluating location of impact through panel response data collected from acoustic emission sensors; the second analyzed the available statistical description of the environment to determine the probability of the measurement system producing useful data, and analyzed the results of the previous tests to evaluate the accuracy of location and the feasibility of extracting impactor characteristics from the panel response. The conclusions were that for one panel the system would not be exposed to any event, but that the entire Logistics Module would provide a modest amount of data. The use of sensors with higher sensitivity than those used in the tests could be advantageous. The impact location could be found with sufficient accuracy from panel response data. The waveforms of the response were shown to contain information on the impact characteristics, but the data set did not span a sufficient range of the variables necessary to evaluate the feasibility of extracting the information.

Lempriere, B. M.↗

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Hardage, Donna↗