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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A Revisited Mechanism of the Graphite-to-Diamond Transition at High Temperature

The graphite-diamond transition, under high-pressure and high-temperature conditions, has been a central subject in physical science. However, its atomistic mechanism remains under debate. Employing large-scale molecular dynamics (MD) simulations, we report a mechanism whereby the diamond nuclei in the graphite matrix propagate in two preferred directions, among which the graphite [120] is about 2.5 times faster than [001]. Consequently, cubic diamond (CD) is the kinetically favorable product, while only a few hexagonal diamonds (HDs) can exist as the twins of CDs. The coherent interface of t-(100)gr//(11-1)cd + [010]gr//[1-10]cd observed in MD simulation was confirmed by our high-resolution transmission electron microscopy experiment. This proposed mechanism not only clarifies the role of HD in graphite-diamond transition but also yields atomistic insight into strengthening synthetic diamond via microstructure engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic Spin Relaxation and Clustering in High-Pressure High-Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content

The negatively charged nitrogen-vacancy (NV – ) color center in diamonds is widely studied because of numerous applications of this unique quantum system in sensing and quantum information sciences. While substitutional nitrogen is required to form the NV – centers in diamond, it also yields other paramagnetic defects─primarily the neutrally charged substitutional nitrogen centers (P1)─that decrease NV – spin coherence, which in turn degrades performance in applications. Herein, we investigate high-pressure high-temperature synthesized diamond microparticles (ca. 140–185 μm) having lower─ranging from 3 to 38 ppm─than the typical nitrogen content of type 1b diamond ( ca. 100 ppm and higher) typically used for the production of fluorescent diamond particles with NV – centers. A suite of electron paramagnetic resonance, optically detected magnetic resonance, and nuclear magnetic resonance methods are used to characterize spin properties of P1 and NV – centers in the particles. Upon decreasing the nitrogen content from 29 to 3 ppm, the ensemble NV – T 2 relaxation time increased by about 3-fold as measured directly in the Hahn Echo experiment at magnetic field of 1.2 T. Analysis of electronic relaxation of P1 centers revealed the existence of at least two distinct populations of P1 centers, consisting of fast and slower relaxing spins and allowed for an estimation of local concentrations. Even with <10 ppm nitrogen contents, the analysis indicated a highly heterogeneous distribution of P1 centers, suggesting the possibility of P1 spin clustering even at low nitrogen concentrations. The combined data demonstrate that the particles prepared from HPHT diamond with a low nitrogen content offer improved spin properties that are beneficial for NV – sensing applications.

Carbon↗
DOE OSTI2024

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser- heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Metastability and Ostwald step rule in the crystallisation of diamond and graphite from molten carbon

Abstract Experimental challenges in determining the phase diagram of carbon at temperatures and pressures near the graphite-diamond-liquid triple point are often related to the persistence of metastable crystalline or glassy phases, superheated crystals, or supercooled liquids. A deeper understanding of the crystallisation kinetics of diamond and graphite is crucial for effectively interpreting the outcomes of these experiments. Here, we reveal the microscopic mechanisms of diamond and graphite nucleation from liquid carbon through molecular simulations with first-principles machine learning potentials. Our simulations accurately reproduce the experimental phase diagram of carbon near the triple point and show that liquid carbon crystallises spontaneously upon cooling. Metastable graphite crystallises in the domain of diamond thermodynamic stability at pressures above the triple point. Furthermore, whereas diamond crystallises through a classical nucleation pathway, graphite follows a two-step process in which low-density fluctuations forego ordering. Calculations of the nucleation rates of the two competing phases confirm this result and reveal a manifestation of Ostwald’s step rule, where the strong metastability of graphite hinders the transformation to the stable diamond phase. Our results provide a key to interpreting melting and recrystallisation experiments and shed light on nucleation kinetics in polymorphic materials with deep metastable states.

Science & Technology - Other Topics↗
DOE OSTI2023

Probing itinerant carrier dynamics at the diamond surface using single nitrogen vacancy centers

Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have extensively been studied, while their interactions with itinerant carriers are relatively unexplored. Here, we show that NV centers situated 10 ± 5 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a tool for characterizing the diamond surface and investigating charge transport in diamond devices.

Physics↗
DOE OSTI2017

Quasiparticle energies and dielectric functions of diamond polytypes

In this work, we perform ab initio many-body Green’s function calculations to investigate the quasiparticle energies and optical properties of diamond polytypes that have been predicted to be producible via a pressure-induced structural phase transition from carbon nanotube solids.We find, through quasiparticle band-structure calculations within the GW approximation, that the band gaps of two hexagonal (2H- and 4H-type) polytypes of diamond differ significantly from that of cubic diamond as well as from that of the crystalline sp 3 carbon phase with a body-centered-tetragonal structure, called bct C 4 . We also examine the dielectric functions of three polytypes of diamond (cubic, 2H, and 4H) by employing the GW plus Bethe-Salpeter equation approach. The calculated optical absorption spectra are found to be distinct from each other. The lattice mismatches of carbon layers of these diamond polytypes are very small and the total-energy differences are also small. Our work opens up the possibility of fabricating diamond superlattices with various electronic and optoelectronic properties by utilizing and controlling the different stacking sequences of carbon layers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
DOE OSTI2023

Imaging of the electronic bonding of diamond at pressures up to 2 million atmospheres

Diamond shows unprecedented hardness. Because hardness is a measure of resistance of chemical bonds in a material to external indentation, the electronic bonding nature of diamond beyond several million atmospheres is key to understanding the origin of hardness. However, probing the electronic structures of diamond at such extreme pressure has not been experimentally possible. The measurements on the inelastic x-ray scattering spectra for diamond up to 2 million atmospheres provide data on the evolution of its electronic structures under compression. The mapping of the observed electronic density of states allows us to obtain a two-dimensional image of the bonding transitions of diamond undergoing deformation. The spectral change near edge onset is minor beyond a million atmospheres, while its electronic structure displays marked pressure-induced electron delocalization. Such electronic responses indicate that diamond’s external rigidity is supported by its ability to reconcile internal stress, providing insights into the origins of hardness in materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Emergence of quantum-field theory in causal diamonds

The experimental successes of quantum-field theory do not justify using it to describe even a finite fraction of the entanglement entropy of a causal diamond with its exterior, in the limit of large diamonds. Susskind and Uglum and Jacobson conjectured that this divergent entropy could be thought of as a renormalization of Newton’s constant in the Bekenstein–Hawking formula, if we applied that formula to arbitrary causal diamonds. Jacobson showed that this leads to a derivation of the null projection of Einstein’s equations as the hydrodynamic equations of the area law for arbitrary diamonds, a derivation which has the added virtue of demonstrating that the cosmological constant is not an energy density. Using a gauge choice adapted to causal diamond boundaries, we revisit arguments of Carlip and Solodukhin that the proper theory of near horizon states is a (cut-off) (1 + 1)-dimensional conformal field theory, with central charge proportional to the transverse area. This leads to a universal formula for fluctuations of the modular Hamiltonian of a diamond, which we argue is compatible with the explanation of the temperature of de Sitter space in terms of an identification between localized energy and the number of constrained q-bits of the holographic degrees of freedom.

Astronomy & Astrophysics↗
DOE OSTI2019

Data Integration Aggregated Model and Ontology for Nuclear Deployment (DIAMOND): Preliminary Model and Ontology

The data of a nuclear utility or plant are stored in various isolated forms in different systems. These data have different structures and tools and are, therefore, used independently. The integration of data sources is often performed manually and on an as-needed basis to achieve a targeted cost saving. A holistic approach to the integration of the data would enable creating a data warehouse for a single nuclear power plant (NPP) or multiple plants. A data warehouse results in direct and indirect cost saving because it automates the manual search for data, enables sharing and comparison of data from various tools of a single or multiple plants, enable digital transformation of data, increase frequencies of needed data that are sparse in nature (such as failures signatures), reduces the need for training on various tools for plant staff, enables a holistic staff perception of plant activities, reveals cost-saving opportunities, and improves the visual perception of all parts a plant necessary for operations and maintenance. One of the main challenges to deploy a data warehouse is associated with the integration of data sources into a consistent data model using a standard ontology that is developed by and for the nuclear power industry. This model is non-existent and is a necessity to enable the nuclear data warehouse role. A data model contains objects that make up a given domain along with their attributes and relationships. It provides domain standardization and maintainability, setting forth the objects, attributes, and relationships within that domain and acting as the guide by which the various applications within that domain will structure their data and interchange. An ontology is defined as “a set of concepts and categories in a subject area or domain that shows their properties and the relations between them”. Ontologies consist of a taxonomy or directed rooted tree. A survey of the models and ontologies available to support a data integration aggregated model and ontology for nuclear deployment (DIAMOND) was performed and different standards that address specific aspects of the needed model and ontology were leveraged and integrated in this effort. In specific, the Basic Formal Ontology (BFO) and Lifecycle Modeling Language (LML) were leveraged for the base ontology. The ISO 4224 and 15926 were leveraged in the development of the overlapping nuclear and fossil data aspects. The electric power research institute (EPRI) power distribution common information model (CIM) was also reviewed and the experience gained was leveraged in the power generation scope of DIAMOND. The initial aim targeted by this effort was to develop the ontology definitions and model structure. This report documents the resulting model and ontology to develop DIAMOND. The report describes the various elements of the model development based on a growing tree development approach, i.e. DIAMOND’s tree structure is established with the core data aspects and is populated with a preliminary level of details. Fifteen sources of data in a nuclear power plant were considered and incorporated into DIAMOND at this stage of development, representing the majority of operations data sources in nuclear power plants. Additional data sources, scope, and a higher level of fidelity will be incorporated into DIAMOND next in collaboration with the nuclear industry and relevant stakeholders.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1980

Adhesion and friction of single-crystal diamond in contact with transition metals

An investigation was conducted to examine the adhesion and friction of single-crystal diamond in contact with various transition metals and the nature of metal transfer to diamond. Sliding friction experiments were conducted with diamond in sliding contact with the metals yttrium, titanium, zirconium, vanadium, iron, cobalt, nickel, tungsten, platinum, rhenium and rhodium. All experiments were conducted with loads of 0.05 to 0.3 N, at a sliding velocity of 0.003 m per minute, in a vacuum of 10 to the -8th Pa, at room temperature, and on the (111) plane of diamond with sliding in the 110 line type direction. The results of the investigation indicate that the coefficient of friction for diamond in contact with various metals is related to the relative chemical activity of the metals in high vacuum. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of diamond in sliding.

Miyoshi, K.↗
NASA NTRS1989

Laser damage threshold of diamond films

The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.

Albin, Sacharia↗
NASA NTRS1993

Laser-enhanced synthesis and processing of diamond films from liquid hydrocarbons

We report synthesis of diamond films by pulsed laser irradiation on copper substrate immersed into liquid benzene. It is envisaged that carbon released from benzene at the liquid-solid interface is converted into diamond as a result of rapid quenching from a high temperature. The diamond crystallites were characterized using high resolution transmission electron microscopy imaging and electron diffraction techniques. Growth of thicker diamond films by subsequent chemical vapor deposition has been investigated by transmission and scanning electron microscopy techniques. Thin diamond film deposited during liquid phase provided seed for diamond growth during subsequent chemical vapor deposition.

Singh, Jogender↗
NASA NTRS1991

Diamond film deposition using microwave plasmas under low pressures

Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

Shing, Y. H.↗
NASA NTRS1993

Diamond thermoluminescence properties of different chondrites

It was found that thermoluminescence (TL) glows of diamonds depend on the origin of diamonds and the chondrite metamorphism degree. The investigation of TL of diamonds was continued and the results for diamonds from Murchison CM2, Krymka LL3.0, Kainsaz CO3, and Abee E4 were considered. The diamonds synthesized by CVD-process (samples 133, 159) and by detonation from soot (DDS-B14-89) were also analyzed for comparison. Before the TL measuring samples were annealed at approximately 350 C for a few seconds and then irradiated by gamma-rays of Cs-137 up to dose approximately 200 krad. TL-measurements were performed in the air atmosphere on the standard equipment. TL data for samples are shown. TL glow for some diamonds are also presented.

Fisenko, A. V.↗
NASA NTRS1994

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1995

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1995

Effects of Surface Treatments on Secondary Electron Emission from CVD Diamond Films

Secondary electron emission (SEE) properties of polycrystalline diamond films grown by chemical vapor deposition (CVD) were measured. The total secondary yield (sigma) from as-grown samples was observed to be as high as 20 at room temperature and 48 while heating at 700 K in vacuum. Electron-beam-activated, alkali-terminated diamond films have shown stable values of sigma as high as 60 when coated with CsI and similarly high values when coated with other alkali halides. Diamond coated with BaF2 had a stable sigma of 6, but no enhancement of the SEE properties was observed with coatings of Ti or Au. Hydrogen was identified to give rise to this effect in as-grown films. However, electron beam exposure led to a reduction in sigma values as low as 2. Exposure to a molecular hydrogen environment restored sigma to its original value after degradation, and enabled stable secondary emission during electron beam exposure. Atomic hydrogen and hydrogen plasma treatments were performed on diamond/Mo samples in an attempt to increase the near-surface hydrogen concentration which might lead to increased stability in the secondary emission. Raman scattering analysis, scanning electron microscopy, and Auger electron spectroscopy (AES) confirmed that hydrogen plasma and atomic hydrogen treatments improved the quality of the CVD diamond significantly. Elastic recoil detection (ERD) showed that heating as-grown diamond targets to 7OO K, which was correlated with an increase in sigma, removed contaminants from the surface but did not drive hydrogen from the diamond bulk. ERD showed that the hydrogen plasma treatment produced an increase in the hydrogen concentration in the near-surface region which did not decrease while heating in vacuum at 700 K, but no improvement in the SEE properties was observed.

Mearini, G. T.↗