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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Visualizing superconductivity in a doped Weyl semimetal with broken inversion symmetry

The Weyl semimetal Mo Te 2 offers a rare opportunity to study the interplay between Weyl physics and superconductivity. Recent studies have found that Se substitution can boost the superconductivity up to 1.5 K, but suppresses the T d structure phase that is essential for the emergence of the Weyl state. A microscopic understanding of the possible coexistence of enhanced superconductivity and the T d phase has not been established so far. Here, we use scanning tunneling microscopy to study an optimally doped superconductor Mo Te 1.85 Se 0.15 with bulk T c ~ 1.5 K . By means of quasiparticle interference imaging, we identify the existence of a low-temperature T d phase with broken inversion symmetry where superconductivity globally coexists. Furthermore, we find that the superconducting coherence length, extracted from both the upper critical field and the decay of density of states near a vortex, is much larger than the characteristic length scale of the existing chemical disorder. Overall, our findings of robust superconductivity arising from a Weyl semimetal normal phase in Mo Te 1.85 Se 0.15 make it a promising candidate for realizing topological superconductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electronic and topological properties of the van der Waals layered superconductor PtTe

We report the crystal growth and structural and electronic properties of superconducting, van der Waals layered PtTe. Easily cleavable crystals with a platelike morphology consistent with the layered structure were grown from a platinum-rich flux. A consistent determination of T c = 0.57 K is made from the onset of diamagnetism, the zero of resistivity, and the midpoint of the heat-capacity jump. The observed behavior is consistent with type-II superconductivity, with upper critical field at T = 0 estimated using the Werthamer-Helfand-Hohenberg theory to be 143 and 65 Oe for fields out of and in the plane, respectively. The heat-capacity discontinuity is close to the weak-coupling BCS value. Density-functional theory calculations and analysis of the electronic structure finds that PtTe is a topological semimetal with numerous surface states but suggests that the superconducting state itself may be topologically trivial. Additionally, angle-resolved photoemission spectroscopy reveals a normal-state Fermi surface in remarkable agreement with theory and confirms the overall topological nature of the material by experimental identification of the surface bands. Together, these findings identify PtTe as an interesting example of a cleavable, topological, and superconducting material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Full superconducting gap in the candidate topological superconductor In 1-x Pb x Te for x = 0.2

High-pressure synthesis techniques have allowed for the growth of samples on the indium-rich side of (Pb,In)Te, which have increased superconducting transition temperatures compared to lead-rich compounds. Here, we present measurements of the temperature dependence of the London penetration depth Δλ(T) in the compound In 0.8 Pb 0.2 Te, which shows a bulk T c,onset of ~ 4.75 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity topologically nontrivial A 2u , pairing, however, odd-parity A 1u , pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Quasi-two-dimensional Fermi surface of superconducting line-nodal metal CaSb 2

We report on the Fermi surfaces and superconducting parameters of CaSb 2 single crystals (superconducting below T c ~1.8K) grown by the self-flux method. The frequency of de Haas–van Alphen and Shubnikov–de Haas oscillations evidences a quasi-two-dimensional (quasi-2D) Fermi surface, consistent with one of the Fermi surfaces forming Dirac lines predicted by first-principles calculations. Measurements in the superconducting state reveal that CaSb 2 is close to a type-I superconductor with the Ginzburg-Landau parameter of around unity. The temperature dependence of the upper critical field H c2 is well described by a model considering two superconducting bands, and the enhancement of the effective mass estimated from H c2 (0K) is consistent with the quasi-2D band observed by the quantum oscillations. Our results indicate that a quasi-2D band forming Dirac lines contributes to the superconductivity in CaSb 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Orbital-induced crossover of the Fulde-Ferrell-Larkin-Ovchinnikov phase into Abrikosov-like states.

The Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state can emerge in superconductors for which the orbital critical field exceeds the Pauli limit. Here, we present angular-resolved specific-heat data of the quasi-two-dimensional organic superconductor ??-(ET)2Cu(NCS )2 , with a focus on high fields in the regime of the FFLO transition. For an increasing out-of-plane tilt of the applied magnetic field, which leads to an increase of orbital contributions, we found that the nature of the superconducting transition changes from second to first order and that a further transition appears within the high-field superconducting phase. However, the superconducting state above the Pauli limit is stable for field tilt of several degrees. Since any finite perpendicular component of the magnetic field necessarily leads to quantization of the orbital motion, the resulting vortex lattice states compete with the modulated order parameter of the FFLO state leading to complex high-field superconducting phases. By solving the linearized self-consistency equation within weak-coupling BCS theory, we show that our results are clear experimental evidence of an orbital-induced transformation of the FFLO order parameter into Abrikosov-like states of higher Landau levels.

Kotte, Tommy↗
DOE OSTI2023

Ferroelectricity and superconductivity in strained Eu x Sr 1 – x TiO 3 films

The superconducting transition of SrTiO 3 can be influenced by tuning its ferroelectric transition, but the underlying reasons remain poorly understood. Here, we investigate compressively strained, Sm-doped films of Eu x Sr 1-x TiO 3 that were grown by molecular beam epitaxy to determine the effect of alloying with Eu on both superconductivity and ferroelectricity, both of which are present in strained SrTiO 3 films. Remarkably, superconductivity survives up to x = 0.14. Films at the lowest alloy concentration studied here, x = 0.09, exhibit no suppression of their superconducting transition temperature, but a strong reduction of the upper critical field (H c2 ), compared to non-alloyed, strained SrTiO 3 films. In addition, these films lack the sharp ferroelectric transition that appears in films without Eu in second harmonic generation measurements. Here, we postulate that Eu-alloying causes a crossover from a globally ordered ferroelectric state to one with only short-range polar order. We discuss the connection between the loss of global polar order and the change in the superconducting properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Superconducting properties and gap structure of the topological superconductor candidate Ti 3 Sb

Here, we present a study of the superconducting properties of the candidate topological superconductor Ti 3 Sb. Electrical transport measurements show zero resistance with a T c,onset of ≈ 5.9 K with a transition width ΔT c ≈ 0.6 K. The superconducting phase boundaries as derived from magnetotransport and magnetic susceptibility measurements agree well. We estimate an upper critical field B c2 (0) ≈ 4.5 T. A Ginzburg-Landau (GL) analysis yields values of the coherence length and penetration depth of ξ = 6.2 nm and λ = 340 nm, respectively, and a GL parameter κ ≈ 55, indicating extreme type-II behavior. Furthermore, we observe a step height in the specific heat $\frac{Δ C_e}{γ T_c}$ ≈ 1.61 ± 0.24 (with T c = 4.8 ± 0.4 K), a value larger than the Bardeen-Cooper-Schrieffer value of 1.43, suggesting modest coupling. Measurements of the temperature dependence of the London penetration depth via the tunnel-diode oscillator technique down to ≈ 450 mK show a full superconducting gap, consistent with a conventional s-wave gap structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Scaling behavior of order parameters for the hybrid improper ferroelectric (Ca, Sr) 3 Ti 2 O 7

Here, we show that in contrast to the conventional view of a mean-field Landau-type behavior, the oxygen octahedral tilt ($\textit{R}$) and polarization (P) in the $A_3B_2\text{O}_7$ Ruddlesden-Popper hybrid improper ferroelectric (Ca,Sr) 3 Ti 2 O 7 exhibits the scaling behavior of a 2D Ising class near the para-to-ferroelectric transition temperature ($T_c$). We also show that $\textit{P}$ exhibits an additional transition from a 2D Ising to a 3D mean-field critical behavior at a temperature $T_{\text{d}} < T_{\text{c}}$, which is driven by enhanced interlayer dipolar correlations due to an increase in the ferroelectrically active $\textit{B}$-site centered dipoles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re 3 Ge 7

The effect of pressure on the low-temperature states of the Re 3 ⁡Ge 7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re 3 ⁡Ge 7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T 1 =59.4K and T 2 =58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering. Upon applying pressure, the two-step (T 1 ,T 2 ) MIT splits into three steps (T 1 ,T 2 . and T 3 ) above 1 GPa, and all traces of MITs are fully suppressed by ~8 GPa. Subsequently, the onset of bulk superconductivity (SC) occurs between 10.8 and 12.2 GPa and persists to our highest pressure of 26.8 GPa. At 12.2 GPa the superconducting transition temperature, T c , and upper critical field, H c ⁢2 reach the maximum of T c (onset) ~5.9 K and H c ⁢2 (1.8 K) ~14 kOe. Finally, our results not only present the observation of SC under high pressure in Re 3 ⁡Ge 7 but also delineate the interplay between SC and other competing electronic states by creating a T-p phase diagram for this potentially topologically nontrivial system Re 3 ⁡Ge 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Fermi surface topology and magnetotransport properties of superconducting Pd 3 Bi 2 Se 2

Pd 3 Bi 2 Se 2 is a rare realization of a superconducting metal with a non-zero topological invariant. Here, in this study, we report the growth of high-quality single crystals of layered Pd 3 Bi 2 Se 2 with a superconducting transition at T c ≈ 0.80 K and upper critical fields of ~10 mT and ~5 mT for the in plane and out-of-plane directions, respectively. Our density functional theory (DFT) calculations reveal three pairs of doubly degenerate bands crossing the Fermi level all displaying clear three dimensional dispersion consistent with the overall low electronic anisotropy (<2). The multiband electronic nature of Pd 3 Bi 2 Se 2 is evident in magneto-transport measurements, yielding a sign changing Hall resistivity at low temperatures. The magnetoresistance is non-saturating and follows Kohler’s scaling rule. We interpret the magneto-transport data in terms of open orbits that are revealed in the DFT calculated Fermi surface. de Haas-van Alphen (dHvA) oscillation measurements using torque magnetometry on single crystals yield four frequencies for out-of-plane fields: F α = (150 ± 26) T, F β = (293 ± 10) T, F γ = (375 ± 20) T and F η = (1017 ± 12) T, with the low frequency dominating the spectrum. Through the measurement of angular dependent dHvA oscillations and DFT calculations we identify the F α frequency with an approximately ellipsoidal electron pocket centered on the L 2 point of the Brillouin zone. Lifshitz-Kosevich analysis of the dHvA oscillations reveals a small cyclotron effective mass m* = (0.11 ± 0.02)m 0 and a nontrivial Berry phase for the dominant orbit. The presence of nontrivial topology in a bulk superconductor positions Pd 3 Bi 2 Se 2 as a potential candidate for exploring topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ultrawide Temperature Range Super-Invar Behavior of R 2 (Fe,Co) 17 Materials ( R = Rare Earth)

Super Invar (SIV), i.e., zero thermal expansion of metallic materials underpinned by magnetic ordering, is of great practical merit for a wide range of high precision engineering. However, the relatively narrow temperature window of SIV in most materials restricts its potential applications in many critical fields. Here, we demonstrate the controlled design of thermal expansion in a family of R 2 (Fe,Co) 17 materials (R=rare Earth). We find that adjusting the Fe-Co content tunes the thermal expansion behavior and its optimization leads to a record-wide SIV with good cyclic stability from 3–461 K, almost twice the range of currently known SIV. In situ neutron diffraction, Mössbauer spectra and first-principles calculations reveal the 3d bonding state transition of the Fe-sublattice favors extra lattice stress upon magnetic ordering. On the other hand, Co content induces a dramatic enhancement of the internal molecular field, which can be manipulated to achieve “ultrawide” SIV over broad temperature, composition and magnetic field windows. Furthermore, these findings pave the way for exploiting thermal-expansion-control engineering and related functional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Superconductivity by alloying the topological insulator SnBi 2 Te 4

Alloying indium into the topological insulator SnBi 2 Te 4 induces bulk superconductivity with critical temperatures T c up to 1.85 K and upper critical fields up to about 14 kOe. This is confirmed by electrical resistivity, heat capacity, and magnetic susceptibility measurements. The heat capacity shows a discontinuity at T c and temperature dependence below T c consistent with weak coupling BCS theory, and suggests a superconducting gap near 0.25 meV. The superconductivity is type-II and the topological surface states have been verified by photoemission. Here, a simple picture suggests analogies with the isostructural magnetic topological insulator MnBi 2 Te 4 , in which a natural heterostructure hosts complementary properties on different sublattices, and motivates new interest in this large family of compounds. The existence of both topological surface states and superconductivity in Sn 1-x In x Bi 2 Te 4 identifies these materials as promising candidates for the study of topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Anisotropic multiband superconductivity in 2 M − WS 2 probed by controlled disorder

The intrinsically superconducting Dirac semimetal 2 M − WS 2 is a promising candidate for realizing proximity-induced topological superconductivity in its protected surface states. A precise characterization of the bulk superconducting state is essential to understand the nature of surface superconductivity in the system. Here, we report a detailed experimental study of the temperature-dependent London penetration depth, λ ( T ) , the upper critical field, H c 2 ( T ) , and the effects of nonmagnetic disorder on these quantities, as well as on the superconducting transition temperature T c in single crystals of 2 M − WS 2 . We observe a power-law variation of λ ( T ) ∝ T 3 at temperatures below 0.35 T c . Nonmagnetic pointlike disorder induced by 2.5 MeV electron irradiation at various doses results in a significant suppression of T c . These observations are markedly different from expectations for a fully gapped isotropic s − wave superconductor. Together with the substantial increase of slope, d H c 2 / d T | T = T c , with increasing disorder, our results suggest a strongly anisotropic s + + multiband superconducting state. These results have direct consequences for the expected proximity-induced superconductivity of the topological surface states. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Growth of High-Performance 4-5μm Thick Film REBCO Tapes Doped With Hafnium Using Advanced MOCVD

Advanced metal organic chemical vapor deposition technique (A-MOCVD) was used to grow 4-5 µm thick REBa 2 Cu 3 O 7–δ (REBCO, RE = rare earth) films, doped with 5% and 15% Hf. Thick REBCO films doped with 5% Hf exhibit self-field critical current density (J c ) over 1.8 MA/cm 2 at 77 K and 3 MA/cm 2 at 65 K, 1.5 T. Increasing the Hf content to 15% resulted in J c above 9 MA/cm 2 at 20 K, 9 T. The effect of (Ba+Hf)/Cu content in Hf-added (5 and 15 mol.%) REBCO films on the critical current density at 77 K, 0 T, c-axis lattice parameter and out-of- plane texture has been studied. In addition to growth of thick film REBCO tapes with superior performance, the A-MOCVD reactor has been used to quadruple the precursor-to-film conversion efficiency above 45%. Furthermore, this achievement has a first order impact in lowering the cost of REBCO tapes made by A-MOCVD.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

The design space of Ga 2 O 3 -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga 2 O 3 -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R ON -breakdown voltage limit of Ga 2 O 3 NP-SBD, enabling >4 kV blocking voltage at R ON of 1–3 mΩ cm 2 . Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga 2 O 3</sub NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m • K).

36 MATERIALS SCIENCE↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Superconducting Nd 1- x Eu x NiO 2 thin films using in situ synthesis

We report on superconductivity in Nd 1-x Eu x NiO 2 using Eu as a 4f dopant of the parent NdNiO 2 infinite-layer compound. We use an all–in situ molecular beam epitaxy reduction process to achieve the superconducting phase, providing an alternate method to the ex situ CaH 2 reduction process to induce superconductivity in the infinite-layer nickelates. The Nd 1-x Eu x NiO 2 samples exhibit a step-terrace structure on their surfaces, have a T c onset of 21 K at x = 0.25, and have a large upper critical field that may be related to Eu 4f doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗