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At least 163 records · Page 9

Light emitting, photovoltaic or other electronic apparatus and system

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Ray, William Johnstone↗

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Ray, William Johnstone↗

Electron Scattering by Low-frequency Whistler Waves at Earth’s Bow Shock

Electrons are accelerated to nonthermal energies at shocks in space and astrophysical environments. While shock drift acceleration (SDA) has been considered a key process of electron acceleration at Earth’s bow shock, it has also been recognized that SDA needs to be combined with an additional stochastic process to explain the observed power-law energy spectra. Here, we show mildly energetic (∼0.5 keV) electrons are locally scattered (and accelerated while being confined) by magnetosonic-whistler waves within the shock transition layer, especially when the shock angle is large (θ(sub Bn) approximately equal or greater than 70°). When measured by the Magnetospheric Multiscale mission at a high cadence, ∼0.5 keV electron flux increased exponentially in the shock transition layer. However, the flux profile was not entirely smooth and the fluctuation showed temporal/spectral association with large-amplitude (δB/B ~ 0.3), low-frequency (approximately equal or less than 0.1 Ω(sub ce) where Ω(sub ce) is the cyclotron frequency), obliquely propagating (θ(sub kB) ~ 30°–60°, where θ(sub kB) is the angle between the wave vector and background magnetic field) whistler waves, indicating that the particles were interacting with the waves. Particle simulations demonstrate that, although linear cyclotron resonances with ∼0.5 keV electrons are unlikely due to the obliquity and low frequencies of the waves, the electrons are still scattered beyond 90° pitch angle by (1) resonant mirroring (transit-time damping), (2) non-resonant mirroring, and (3) subharmonic cyclotron resonances. Such coupled nonlinear scattering processes are likely to provide the stochasticity needed to explain the power-law formation.

Oka, M.↗

The Onset of Resonance-Controlled Instability in Spherical Bubble Oscillations

Single bubble dynamics are investigated using acoustic techniques for isolation and manipulation. The goal of the investigations is to understand the dynamic origin of the various phenomena that bubbles exhibit: light emission, enhanced mass transport, chaotic and quasiperiodic oscillations and translations. Once understood, acoustically manipulated bubbles can serve as platforms for materials effects on free surfaces, using surfactants to alter surface rheology and observing how that affects both dynamics and also mass transport. The effects of gravity on the problem will be shown to be significant. The first set of observations from 1g experimentation are presented. These observations are of the onset conditions for instability of the spherical shape of the bubble. For the size range 55 - 90 microns in diameter we observe instability governed by resonant mode coupling, which is significantly affected by the buoyant force and its effects.

bubbles↗

Assembly and Integration Process of the High-Density Detector Array Readout Modules for the Simons Observatory

The Simons Observatory will measure the cosmic microwave background tempera-ture and polarization using a suite of new telescopes in the Atacama Desert in Chile. The Simons Observatory will use dichroic transition edge sensor (TES) bolometer arrays spanning six frequency bands from 27 to 280 GHz. The Simons Observa-tory will pioneer the use of a densely packed multiplexing architecture based on the microwave SQUID multiplexer ( 𝜇mux), housing ∼2000 microwave resonators, each coupled to a TES. The Simons Observatory aims to multiplex each array of ∼2000 detectors with a single pair of coaxial cables and requires a multiplexing factor of ∼1000 . The Simons Observatory cryogenic readout system is called the universal microwave multiplexing module (UMM). The UMM couples to both horn and lenslet-coupled detector arrays and is integrated into the universal focal-plane module (UFM) after being independently characterized. We present processes we have developed for highly repeatable and automated integration methods of UMMs, which will be needed for the production of the 49 UFMs required for the first stage of the Simons Observatory.

CMB↗

Global Analysis of Nonlinear Second-Mode Development in a Mach-6 Boundary Layer From High-Speed Schlieren Data

The second-mode instability on a 7◦ half-angle sharp cone at Mach 6 is analyzed using high-speed calibrated schlieren imagery at a frame rate near the expected fundamental frequency. Experiments were conducted in the NASA Langley 20-Inch Mach 6 facility at unit Reynolds number between 6.56×106 and 9.71×106 m−1. Time-resolved pixel intensity signals throughout the boundary layer are reconstructed using spatially available data in the schlieren images to recover an effective sampling rate of over 10 MHz; these are then converted to quantitative density gradients using a thin-lens-based calibration technique. A global analysis is performed on the schlieren data to investigate the nonlinear growth of the second-mode fundamental and harmonic content. Point-wise measures of the auto-bicoherence are used to identify specific triadic interactions and the locations of their highest levels of quadratic phase coupling. Significant resonance interactions between the second-mode fundamental and harmonic instabilities were found along with interactions between these and the mean flow. Bispectral mode decomposition is employed to educe the flow structures associated with these interactions. A similar analysis is performed for the power spectrum, with power spectral densities computed for each pixel’s time-series and spectral proper orthogonal decomposition employed to derive the modal structure and energy of the flow at specific frequencies. Comparisons between the bispectral quantities and second-mode power show that nonlinear interactions, particularly resonance interactions, are closely correlated with space-time modulation of disturbances during the nonlinear stage of transition.

boundary layer transition↗

Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna

A design of an active antenna with a dielectric resonator stabilized high-electron-mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.

Simons, Rainee N.↗

Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna

A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.

Simons, Rainee N.↗

Lumped-element models characterize DR coupling effects

An approach to the analysis of closely spaced resonances produced by a microstrip coupled dielectric resonator is presented. In particular, it is shown that the use of a lumped-element model significantly simplifies the analysis. An experimental verification demonstrates that the model predicts the adjacent complementary resonances to within 1.6 percent of the measured value.

Hearn, Chase P.↗

Nanostructures Exploit Hybrid-Polariton Resonances

Nanostructured devices that exploit the hybrid-polariton resonances arising from coupling among photons, phonons, and plasmons are subjects of research directed toward the development of infrared-spectroscopic sensors for measuring extremely small quantities of molecules of interest. The spectroscopic techniques in question are surface enhanced Raman scattering (SERS) and surface enhanced infrared absorption (SEIRA). An important intermediate goal of this research is to increase the sensitivity achievable by these techniques. The basic idea of the approach being followed in this research is to engineer nanostructured devices and thereby engineer their hybrid-polariton resonances to concentrate infrared radiation incident upon their surfaces in such a manner as to increase the absorption of the radiation for SEIRA and measure the frequency shifts of surface vibrational modes. The underlying hybrid-polariton-resonance concept is best described by reference to experimental devices that have been built and tested to demonstrate the concept. The nanostructure of each such device includes a matrix of silicon carbide particles of approximately 1 micron in diameter that are supported on a potassium bromide (KBr) or poly(tetrafluoroethylene) [PTFE] window. These grains are sputter-coated with gold grains of 40-nm size (see figure). From the perspective of classical electrodynamics, in this nanostructure, that includes a particulate or otherwise rough surface, the electric-field portion of an incident electromagnetic field becomes concentrated on the particles when optical resonance conditions are met. Going beyond the perspective of classical electrodynamics, it can be seen that when the resonance frequencies of surface phonons and surface plasmons overlap, the coupling of the resonances gives rise to an enhanced radiation-absorption or -scattering mechanism. The sizes, shapes, and aggregation of the particles determine the frequencies of the resonances. Hence, the task of designing a nanostructure to exhibit the desired radiation-absorption properties translates, in large part, to selecting particle sizes and shapes to obtain the desired enhanced coupling of energy from photons to plasmons and phonons. To broaden the spectral region(s) of enhanced absorption, one would select a distribution of particle sizes and shapes.

Anderson, Mark↗

WGM resonators for studying orbital angular momentum of a photon, and methods

An optical system, device, and method that are capable of generating high-order Bessel beams and determining the orbital angular momentum of at least one of the photons of a Bessel beam are provided. The optical system and device include a tapered waveguide having an outer surface defined by a diameter that varies along a longitudinal axis of the waveguide from a first end to an opposing second end. The optical system and device include a resonator that is arranged in optical communication with the first end of the tapered waveguide such that an evanescent field emitted from (i) the waveguide can be coupled with the resonator, or (ii) the resonator can be coupled with the waveguide.

Matsko, Andrey B.↗

Laser apparatus

A laser apparatus having a pump laser device for producing pump laser energy upon being excited is disclosed. The pump laser device has a resonating cavity for oscillating and amplifying the pump laser energy. A source laser device is used for producing source laser energy upon being excited by the pump laser energy. The source laser device has a resonating cavity for oscillating and amplifying the source laser energy. The source laser's resonating cavity is coupled within a portion of the pump laser's resonating cavity.

Koepf, G. A.↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗

Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same

When embodied in a microgyroscope, the invention is comprised of a silicon, four-leaf clover structure with a post attached to the center. The whole structure is suspended by four silicon cantilevers or springs. The device is electrostatically actuated and capacitively detects Coriolis induced motions of the leaves of the leaf clover structure. In the case where the post is not symmetric with the plane of the clover leaves, the device can is usable as an accelerometer. If the post is provided in the shape of a dumb bell or an asymmetric post, the center of gravity is moved out of the plane of clover leaf structure and a hybrid device is provided. When the clover leaf structure is used without a center mass, it performs as a high Q resonator usable as a sensor of any physical phenomena which can be coupled to the resonant performance.

Tang, Tony K.↗

High-Order Tunable Filters Based on a Chain of Coupled Crystalline Whispering Gallery-Mode Resonators

We demonstrate experimentally a tunable third-order optical filter fabricated from the three voltage-controlled lithium niobate whispering gallery-mode resonators. The filter operates at 1550 nm with 30-MHz bandwidth and can be electrooptically tuned by 12 GHz in the linear regime with approximately 80-MHz/V tuning rate. With this filter, we have demonstrated 6-dB fiber-to-fiber insertion loss and 30-ns tuning speed, limited by the resonator buildup time.

optical resonators↗