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At least 163 records · Page 9

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DOE OSTI2023

Coating developments towards enabling aluminum as a bipolar plate material for PEM fuel cells

Bipolar plates represent a significant portion of the cost and weight of a proton exchange membrane fuel cell stack. As a result, there has been significant interest in using low weight and cost materials, such as aluminum. Aluminum has good mechanical and physical properties; however, it performs poorly in the corrosive environment within the fuel cell stack. To overcome the corrosion performance issue, there have been efforts towards developing coating processes to enable aluminum to attain corrosion targets. In an effort to enable aluminum as a viable bipolar plate material, a solid phase processing (diffusion bonding) approach for bonding a titanium foil to aluminum is investigated in this study. The microstructure, corrosion performance, mechanical properties and electrical resistance are investigated. To avoid the known reduction in contact resistance performance of titanium after exposure to bipolar plate media, the effect of addition of highly conductive gold particles after diffusion bonding, on contact resistance and corrosion behavior, is also studied and compared with diffusion bonded Ti to Al. In conclusion, the results indicate that diffusion bonded Ti to Al provides a viable alternative material combination for bipolar plate that avoids the micro pores and crevasses that are associated with vapor deposition or electroplating.

25 ENERGY STORAGE↗

DOE OSTI2021

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific ON-resistance of 100.8 mΩ · cm 2 .

42 ENGINEERING↗

DOE OSTI2026

Spray-Coated Silver as Backside Metal for III–V Photovoltaic Devices on GaAs and Ge Substrates

The accelerated increase in demand for III-V space photovoltaics on GaAs and Ge substrates, as well as growing interests in terrestrial applications, motivate the development of cost-effective, high-throughput processing routes of these materials. Here, in this study, we assess spray-coated silver (Ag) back contact metallization as a substitute for electron-beam-evaporated metals currently used in industry. We find that the spray-coated Ag films are dense and continuous. By means of quantum efficiency, dark current-voltage, and illuminated current-voltage characterizations, we show that spray-coated GaAs and Ge solar cells perform similarly to baseline devices with electroplated Au, including under high current densities. We estimate that the thresholds for specific contact resistance below which back contacts do not significantly contribute to resistive loss are 2.1 x 10 -1 Ω•cm 2 for GaAs and 4.7 x 10 -2 Ω•cm 2 for Ge. We experimentally confirm that our spray-coated samples meet these requirements. Peel tests show that the adhesion of plain spray-coated Ag films to the back of p-type Ge substrates used in III-V solar cells is currently insufficient, whereas adhesion to p-type GaAs substrates is outstanding and requires no further optimization.

14 SOLAR ENERGY↗

NASA NTRS1988

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗

NASA NTRS1989

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗

NASA NTRS1982

Basic investigation into the electrical performance of solid electrolyte membranes

The electrical performance of solid electrolyte membranes was investigated analytically and the results were compared with experimental data. It is concluded that in devices that are used for pumping oxygen the major power losses have to be attributed to the thin film electrodes. Relations were developed by which the effectiveness of tubular solid electrolyte membranes can be determined and the optimum length evaluated. The observed failure of solid electrolyte tube membranes in very localized areas is explained by the highly non-uniform current distribution in the membranes. The analysis points to a possible contact resistance between the electrodes and the solid electrolyte material. This possible contact resistance remains to be investigated experimentally. It is concluded that film electrodes are not appropriate for devices which operate with current flow, i.e., pumps though they can be employed without reservation in devices that measure oxygen pressures if a limited increase in the response time can be tolerated.

Richter, R.↗

DOE OSTI2022

Tin sensitization and silver activation on indium tin oxide surfaces

Adhesion of electrical contacts on electronic and optoelectronic devices is important for reliable device operation. Sn-sensitization is a widely used process that improves uniformity and adhesion of plated metals to glass and polymer surfaces. Electrically conductive substrates can significantly benefit from improved uniformity, adhesion, and contact resistance to metallic contact layers. In this study, we investigate the process of Sn-sensitization and Ag-activation on indium tin oxide (ITO) surfaces—a dominant transparent conducting oxide used in optoelectronic devices. Here, our results show that ITO films exposed to Sn-sensitization solutions with HCl concentrations below 10 mM effectively modify the surface termination through the process of Sn-sensitization (Sn-bonding at the surface hydroxide sites) without etching the ITO film. However, the subsequent Ag-activation on an ITO surface does not seem to follow the typical response on a glass substrate, suggesting that Ag-activation of an ITO surface is likely limited by the Ag ion size relative to the area density of surface hydroxide sensitization sites.

42 ENGINEERING↗

NASA NTRS2015

Thermal Interface Materials Selection and Application Guidelines: In Perspective of Xilinx Virtex-5QV Thermal Management

The heat from high-power microdevices for space, such as Xilinx Virtex 4 and 5 (V4 and V5), has to be removed mainly through conduction in the space vacuum environment. The class-Y type packages are designed to remove the heat from the top of the package, and the most effective method to remove heat from the class-Y type packages is to attach a heat transfer device on the lid of the package and to transfer the heat to frame or chassis. When a heat transfer device is attached to the package lid, the surfaces roughness of the package lid and the heat transfer device reduces the effective contact area between the two. The reduced contact area results in increased thermal contact resistance, and a thermal interface material is required to reduce the thermal contact resistance by filling in the gap between the surfaces of the package lid and the heat transfer device. The current report describes JPL's FY14 NEPP task study on property requirements of TIM and impact of TIM properties on the packaging reliability. The current task also developed appratuses to investigate the performances of TIMs in the actual mission environment.

Suh, Jong-ook↗

NASA NTRS2015

Thermal interface materials selection and application guidelines: in perspective of Xilinx Virtex-5QV thermal management

Tseng, Stephen↗

DOE OSTI2023

Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si|SiO x |AlO x |MoO x |metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlO x provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiO x |AlO x interface. A large (>1 × 10 12 q.cm –2 ) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlO x in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlO x in contacted structures with MoO x . In some samples, HfO x interface layers were inserted between AlO x and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Here, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.

14 SOLAR ENERGY↗

NASA NTRS1991

Effects of ultravacuum and space environment on contact ohmic resistance (AO 138-11)

The experiment was aimed at checking compatibility of the aluminum conductors with conventional conductors and contacts under different conditions of manufacturing (mechanical or magnetostrictive crimping) and storage in laboratory or in long-duration space environment. The electrical characteristics of connections built from nickel-plated conductors and glided copper contacts were noted to vary over the duration of the experiment. These variations are unrelated with the crimping or storage conditions or with metal pairing (nickel-plated aluminum/tinned or silver copper). Such evolutions, even slight, are detrimental to connection quality. The same observations hold for some like connections subjected to long-duration thermal cycles. Therefore, work on aluminum technology was reoriented toward a silver aluminum conductor/ golded aluminum contact solution. The first evaluation test performed according to this definition have yielded satisfactory results.

Assie, Jean Pierre↗

DOE OSTI2022

Validation and Parametric Investigations of an Internal Permanent Magnet Motor Using a Lumped Parameter Thermal Model

One of the key challenges for the electric vehicle industry is to develop high-power-density electric motors. Achieving higher power density requires efficient heat removal from inside the motor. In order to improve thermal management, a multiphysics modeling framework that is able to accurately predict the behavior of the motor, while being computationally efficient, is essential. This paper first presents a detailed validation of a lumped parameter thermal network (LPTN) model of an Internal Permanent Magnet synchronous motor within the commercially available MOTOR-CAD modeling environment. The validation is based on temperature comparison with experimental data and with more detailed finite element analysis (FEA). All critical input parameters of the LPTN are considered in detail for each layer of the stator, especially the contact resistances between the impregnation, liner, laminations, and housing. Finally, a sensitivity analysis for each of the critical input parameters is provided. A maximum difference of 4% - for the highest temperature in the slot-winding and the end-winding - was found between the LPTN and the experimental data. Comparing the results from the LPTN and the FEA model, the maximum difference was 2% for the highest temperature in the slot-winding and end-winding. As for the LPTN sensitivity analysis, the thermal parameter with the highest sensitivity was found to be the liner-to-lamination contact resistance.

42 ENGINEERING↗

DOE OSTI2020

Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts

In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.

42 ENGINEERING↗

NASA NTRS2005

Nano-engineered Multiwall Carbon Nanotube-copper Composite Thermal Interface Material for Efficient Heat Conduction

Efforts in integrated circuit (IC) packaging technologies have recently been focused on management of increasing heat density associated with high frequency and high density circuit designs. While current flip-chip package designs can accommodate relatively high amounts of heat density, new materials need to be developed to manage thermal effects of next-generation integrated circuits. Multiwall carbon nanotubes (MWNT) have been shown to significantly enhance thermal conduction in the axial direction and thus can be considered to be a candidate for future thermal interface materials by facilitating efficient thermal transport. This work focuses on fabrication and characterization of a robust MWNT-copper composite material as an element in IC package designs. We show that using vertically aligned MWNT arrays reduces interfacial thermal resistance by increasing conduction surface area, and furthermore, the embedded copper acts as a lateral heat spreader to efficiently disperse heat, a necessary function for packaging materials. In addition, we demonstrate reusability of the material, and the absence of residue on the contacting material, both novel features of the MWNT-copper composite that are not found in most state-of-the-art thermal interface materials. Electrochemical methods such as metal deposition and etch are discussed for the creation of the MWNT-Cu composite, detailing issues and observations with using such methods. We show that precise engineering of the composite surface affects the ability of this material to act as an efficient thermal interface material. A thermal contact resistance measurement has been designed to obtain a value of thermal contact resistance for a variety of different thermal contact materials.

Ngo, Quoc↗

DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗

DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗

DOE OSTI2026

Development of thermal joints for conduction-cooling applications

Abstract In support of the development of conduction-cooled superconducting radiofrequency (SRF) niobium cavities for use in continuous-wave linear accelerators, an experimental study of thermal contact resistance was performed on bolted joints using high-purity niobium, aluminium, and copper along with Apiezon N grease and indium foil as interfacial materials. The geometry of each joint investigated aims at replicating the design adopted in conduction-cooled SRF cavities currently under development at Jefferson Lab. The materials’ thermal conductivity and the joints’ thermal resistance were measured in the temperature range of 3.5 - 10 K. The results showed that the low thermal contact resistance of 2-4 K·cm 2 /W at 4.3 K achieved with Al-In-Nb and Al-Apiezon N-Cu joints should allow the operation of conduction-cooled SRF cavities at a targeted accelerating gradient of ∼10 MV/m.

Lewis, J. [Old Dominion University]↗

DOE OSTI2020

Identification and characterization of the dominant thermal resistance in lithium-ion batteries using operando 3-omega sensors

Poor thermal transport within lithium-ion batteries fundamentally limits their performance, safety, and lifetime, in spite of external thermal management systems. All prior efforts to understand the origin of batteries' mysteriously high thermal resistance have been confined to ex situ measurements without understanding the impact of battery operation. Here, we develop a frequency-domain technique that employs sensors capable of measuring spatially resolved intrinsic thermal transport properties within a live battery while it is undergoing cycling. Our results reveal that the poor battery thermal transport is due to high thermal contact resistance between the separator and both electrode layers and worsens as a result of formation cycling, degrading total battery thermal transport by up to 70%. We develop a thermal model of these contact resistances to explain their origin. These contacts account for up to 65% of the total thermal resistance inside the battery, leading to far-reaching consequences for the thermal design of batteries. Finally, our technique unlocks new thermal measurement capabilities for future battery research.

25 ENERGY STORAGE↗