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At least 163 records · Page 9

Article with buffer layer and method of making the same

A method of forming a coating layer on a glass substrate in a glass manufacturing process includes: providing a first coating precursor material for a selected coating layer composition to at least one multislot coater to form a first coating region of the selected coating layer; and providing a second coating precursor material for the selected coating layer composition to the multislot coater to form a second coating region of the selected coating layer over the first region. The first coating precursor material is different than the second precursor coating material.

36 MATERIALS SCIENCE↗

Photoemission characteristics of thin GaAs-based heterojunction photocathodes

To better understand the different photoemission mechanism of thin heterojunction photocathodes, the quantum efficiency models of reflection-mode and transmission-mode GaAs-based heterojunction photocathodes are revised based on one-dimensional continuity equations, wherein photoelectrons generated from both the emission layer and buffer layer are taken into account. By comparison of simulated results between the revised and conventional models, it is found that the electron contribution from the buffer layer to shortwave quantum efficiency is closely related to some factors, such as the thicknesses of emission layer and buffer layer and the interface recombination velocity. Besides, the experimental quantum efficiency data of reflection-mode and transmission-mode AlGaAs/GaAs photocathodes are well fitted to the revised models, which confirm the applicability of the revised quantum efficiency models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mean-velocity profile of smooth channel flow explained by a cospectral budget model with wall-blockage

A series of recent studies has shown that a model of the turbulent vertical velocity variance spectrum (Fvv) combined with a simplified cospectral budget can reproduce many macroscopic flow properties of turbulent wall-bounded flows, including various features of the mean-velocity profile (MVP), i.e., the “law of the wall”. While the approach reasonably models the MVP’s logarithmic layer, the buffer layer displays insufficient curvature compared to measurements. The assumptions are re-examined here using a direct numerical simulation (DNS) dataset at moderate Reynolds number that includes all the requisite spectral and co-spectral information. Starting with several hypotheses for the cause of the “missing” curvature in the buffer layer, it is shown that the curvature deficit is mainly due to mismatches between (i) the modelled and DNS-observed pressure-strain terms in the cospectral budget and (ii) the DNS-observed Fvv and the idealized form used in previous models. By replacing the current parameterization for the pressure-strain term with an expansive version that directly accounts for wall-blocking effects, the modelled and DNS reported pressure-strain profiles match each other in the buffer and logarithmic layers. Forcing the new model with DNS-reported Fvv rather than the idealized form previously used reproduces the missing buffer layer curvature to high fidelity thereby confirming the “spectral link” between Fvv and the MVP across the full profile. A broad implication of this work is that much of the macroscopic properties of the flow (such as the MVP) may be derived from the energy distribution in turbulent eddies (i.e., Fvv) representing the microstate of the flow, provided the link between them accounts for wall-blocking.

54 ENVIRONMENTAL SCIENCES↗

Chalcogen back surface field layer

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Antunez, Priscilla D.↗

Chalcogen back surface field layer

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

14 SOLAR ENERGY↗

Portable heatable container

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Yang, L. C.↗

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

14 SOLAR ENERGY↗

Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices

Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

14 SOLAR ENERGY↗

Perovskite Solar Cells for High-Efficiency Tandems

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n ++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm 2 . Werner et al. 15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher current density of 15.9 mA/cm 2 . It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both organic cation evolution and moisture penetration to overcome the often-reported thermal and environmental instability of metal halide perovskites. Previous perovskite-containing tandems utilized molybdenum oxide (MoO x ) as a sputter buffer layer, but this has raised concerns over long-term stability, as the iodide in the perovskite can chemically react with MoO x . Mixed-cation perovskite solar cells have consistently outperformed their single-cation counterparts. The first perovskite device to exceed 20% PCE was fabricated with a mixture of methylammonium (MA) and formamidinium (FA). Recent reports have shown promising results with the introduction of cesium mixtures, enabling high efficiencies with improved photo-, moisture, and thermal stability. The increased moisture and thermal stability are especially important as they broaden the parameter space for processing on top of the perovskite, enabling the deposition of metal oxide contacts through atomic layer deposition (ALD) or chemical vapor deposition (CVD) that may require elevated temperatures or water as a counter reagent. Both titanium dioxide (TiO 2 ) and tin oxide (SnO 2 ) have consistently proven to be effective electron-selective contacts for perovskite solar cells and both can be deposited via ALD at temperatures below 150 °C. We introduced a bilayer of SnO 2 and zinc tin oxide (ZTO) that can be deposited by either low-temperature ALD or pulsed-CVD as a window layer with minimal parasitic absorption, efficient electron extraction, and sufficient buffer properties to prevent the organic and perovskite layers from damage during the subsequent sputter deposition of a transparent ITO electrode. We explored pulsed-CVD as a modified ALD process with a continual, rather than purely step-wise, growth component in order to considerably reduce the process time of the SnO 2 deposition process and minimize potential perovskite degradation. These layers, when used in an excellent mixed-cation perovskite solar cell atop a silicon solar cell tuned to the infrared spectrum, enable highly efficient perovskite-silicon tandem solar cells with enhanced thermal and environmental stability.

42 ENGINEERING↗

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UV part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2 /CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.

14 SOLAR ENERGY↗

Comparative analysis of waveguide plasmon – polariton refractometers based on excitation of surface, symmetric, and antisymmetric plasmon modes

We present the results of a numerical study of three waveguide refractometer configurations based on surface plasmon resonance: a refractometer without a buffer layer based on exciting a surface plasmon mode, and refractometers with a buffer layer based on exciting symmetric and antisymmetric plasmon modes. It is found that the best metrological characteristics are inherent in the refractometer based on the symmetric plasmon mode: the cumulative advantage in spectral sensitivity and width of the resonance dip attains two orders of magnitude as compared to the refractometer based on antisymmetric plasmon mode and one order of magnitude as compared to the refractometer without a buffer layer. For measuring local variations of the refractive index in a thin layer the advantage of using the symmetric plasmon mode is less expressed and amounts to nearly 20 and 6 times, respectively. It is shown that higher metrological characteristics of the refractometer based on symmetric plasmon mode are achieved at the expense of its compactness: the length of the sensitive segment in such a refractometer may exceed that of the refractometers without the buffer layer and those based on the antisymmetric mode by three orders of magnitude. The minimal length of the sensitive segment is possible in the refractometer based on the antisymmetric plasmon mode, which, however, possesses the worst metrological characteristics. As to the fabrication simplicity, the scheme without the buffer layer seems most attractive. This scheme occupies the intermediate position between the refractometers based on symmetric and antisymmetric plasmon modes both in metrological parameters and in the length of the sensitive segment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

X-ray analysis of strain distribution in two-step grown epitaxial SrTiO{sub 3} thin films

Epitaxial SrTiO{sub 3} (STO) thin films were grown on (001)-oriented LaAlO{sub 3} (LAO) substrates using a two-step growth method by ion beam sputter deposition. An STO buffer layer was initially grown on the LAO substrate at a low temperature of 150 °C prior to growing the STO main layer at 750 °C. The thickness of the STO buffer layer was varied at 3, 6, and 10 nm, while the total film thickness was kept constant at approximately 110 nm. According to x-ray structural analysis, we show that the STO buffer layer plays an essential role in controlling the strain in the STO layer grown subsequently. It is found that the strains in the STO films are more relaxed with an increase in buffer layer thickness. Moreover, the strain distribution in two-step grown STO films becomes more homogeneous across the film thickness when compared to that in directly grown STO film.

36 MATERIALS SCIENCE↗

Tetradymite layer assisted heteroepitaxial growth and applications

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

14 SOLAR ENERGY↗

Manufacturing and Reliability Science for CIGS Photovoltaics

The purpose of this program was to overcome the largest challenges to investor confidence and long product lifetime in CuIn x Ga 1-x Se 2 (CIGS)-based photovoltaic products: metastability, shading-induced hot spots, and potential-induced degradation. Key findings were made in each of these areas by studying CIGS reliability at the cell level, which very few groups are currently doing. Metastability was thought to be a function of the CIGS absorber. We have challenged the state-of-the-art by showing that the metastability seen in commercial products is likely to be caused by the buffer layer. SCAPS device modeling confirmed that the buffer layer has a significant influence on metastability in CIGS devices, and also led to a processing change - the introduction of CdS islands to Zn(O,S) buffer layers - that dramatically reduced metastability in CIGS solar cells. In the reverse-bias shading task, modeling showed us that 19% solar cells are possible with thin CIGS layers of 0.5 µm. We were able to fabricate 15.2% solar cells in this project, which is the highest reported efficiency of devices in the ultra-thin class. We also discovered that the best way to dissipate less power in reverse bias was to eliminate the intrinsic ZnO layer that is often used in CIGS devices. Lower power dissipation led to devices that allowed two times the maximum power point current density in reverse without damage. Potential-induced degradation (PID) is caused by the drift of Na+ ions from the back glass to the CIGS/Mo interface, followed by diffusion into the solar cells and to the CdS region. We found that PID can be slowed by using low-conductivity borosilicate glass that contains higher K and lower Na than soda-lime glass. Based on significant progress in each of the three reliability challenges, the CIGS cell-level reliability project was very successful. We have also proved that module-level degradation mechanisms can be tested and solved at the cell level.

14 SOLAR ENERGY↗

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗