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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Additively-manufactured Al-0.3Zr-0.2Ce-0.2Cu alloy with high creep resistance and electrical conductivity

Here, a new, solute-lean Al-0.3Zr-0.2Ce-0.2Cu (wt.%) alloy is developed for additive manufacturing that overcomes the classical tradeoff between conductivity and creep resistance. The rapid-cooling-enabled supersaturation of Zr, and its uniform distribution in α-Al matrix, along with formation of submicron (Ce,Cu)-rich intermetallic particles on solidification lead to unusually high creep resistance at 200 °C. Near-zero secondary creep rates are achieved up to the alloy yield stress (YS) of 65 MPa at 200 °C in as-fabricated state. The Zr-solute-induced dislocation-climb suppression mechanism underlying this improvement also restricts dynamic recovery above YS, as noted from appreciable primary creep and its transitioning to near-zero secondary creep rates. A combination of relatively coarse, epitaxially-grown α-Al grains, low Zr concentration in α-Al, and the impurity-scavenging effect of Ce to purify α-Al matrix produces high electrical conductivity of ∼48 %IACS. Aging precipitation of L1 2 -Al 3 Zr nanoprecipitates doubles the YS (to ∼150 MPa) at room temperature and increases alloy conductivity to ∼58 %IACS, but loss of solid-solution Zr out of α-Al matrix leads to activation of dislocation climb, degrading the creep properties as compared to the supersaturated Al-Zr solid solution in the as-fabricated state. Compared to L1 2 -Al 3 Zr nanoprecipitates, submicron (Ce,Cu)-rich particles formed on solidification are more effective at impeding dislocation climb, producing a threshold stress for dislocation creep of ∼ 50 MPa at 200 °C. The new alloy design concepts, especially solute-induced dislocation-climb suppression for creep resistance, explored here may pave way for the design of new metallic alloys for thermal/electrical conductors and other high-temperature applications.

Additive Manufacturing↗
DOE OSTI2023

Microstructural evolution of rapidly solidified hypoeutectic Al 10Cu alloy during non-isothermal annealing transients induced by nano-second laser pulses

The evolution of characteristic nonequilibrium features presenting in morphologically distinct regions of rapid solidification (RS) microstructures in a hypoeutectic Al—10Cu (atomic %) in response to non-isothermal annealing transients has been studied by transmission electron microscopy (TEM). The capabilities of the Movie-Mode Dynamic TEM (MM-DTEM) instrument were used to expose select regions of the RS microstructure to sequences of rapid heating and cooling transients induced by nanosecond laser pulses while permitting in-situ observation. Partial melting, microstructural scale coarsening, morphological changes of the nonequilibrium features in the multi-phase RS microstructure, and solid-state phase transformation were observed. Heterogeneous nucleation of nanoscale θ-Al 2 Cu phase involved metastable supersaturated α-Al and the θ'-Al 2 Cu phases, establishing different sets of orientation relationships for the stable θ-Al 2 Cu and α-Al phases. Replacement of banded morphology grains that formed under conditions driven farthest from equilibrium by an equiaxed nanocrystalline structure comprised of α-Al phase, the primary solidification product, and an intergranular network of Al 2 Cu crystals has been attributed to local remelting. Here the experimental approach explored, permitted discovery of mechanistic details of location-specific transformation pathways activated in the multi-phase RS microstructure of hypoeutectic Al—Cu during subsequent nonisothermal transients.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantification of High‐Temperature Transition Al 2 O 3 and Their Phase Transformations**

Abstract High‐temperature treatment of γ‐Al 2 O 3 can lead to a series of polymorphic transformations, including the formation of δ‐Al 2 O 3 and θ‐Al 2 O 3 . Quantification of the microstructure in the range where δ‐ and θ‐Al 2 O 3 are formed represents a formidable challenge, as both phases accommodate a high degree of structural disorder. In this work, we explore the use of an XRD recursive‐stacking formalism for the quantification of high‐temperature transition aluminas. We formulate the recursive‐stacking methodology for modelling of disorder in δ‐Al 2 O 3 and twinning in θ‐Al 2 O 3 and show that explicitly accounting for the disorder is necessary to reliably model the XRD patterns of high‐temperature transition alumina. We also use the recursive stacking approach to study phase transformation during high‐temperature (1050 °C) treatment. We show that the two different intergrowth modes of δ‐Al 2 O 3 have different transformation characteristics and that a significant portion of δ‐Al 2 O 3 is stabilized with θ‐Al 2 O 3 even after prolonged high‐temperature exposures.

Kovarik, Libor↗
DOE OSTI2020

Quantification of High-Temperature Transition Al2O3 and Their Phase Transformations

High temperature exposure of ?-Al2O3 can lead to a series of polymorphic transformations, including the formation of ?-Al2O3 and ?-Al2O3. Quantification of the microstructure in the ?/?-Al2O3 formation range represents a formidable challenge as both phases accommodate a high degree of structural disorder. In this work, we explore the use of XRD recursive stacking formalism for quantification of high temperature transition aluminas. We formulate the recursive stacking methodology for modelling of disorder in ?-Al2O3 and twinning in ?-Al2O3 and show that explicitly accounting for the disorder is necessary to reliably model the XRD patterns of high temperature transition alumina. In the second part, we use the recursive stacking approach to study phase transformation during high temperature (1050 ºC) treatment. We show that the two different intergrowth modes of ?-Al2O3 have different transformation characteristics, and that a significant portion of ?-Al2O3 is stabilized with ?-Al2O3 even after prolonged high-temperature exposures. In discussions, we outline the limitation of the current XRD approach and discuss a possible multimodal XRD and NMR approach which can improve analysis of complex transition aluminas. This work was performed in the Wiley Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by DOEs Office of Biological and Environmental Research and located at PNNL. The work was supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences.

Kovarik, Libor↗
DOE OSTI2022

Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure and dynamics of ILs-based gel polymer electrolytes and its enhanced conductive properties with the incorporation of Al 2 O 3 nanofibers

Here, this work reports the enhanced mobility of ions in ionic liquid (IL)-based gel polymer electrolytes (GPEs) with the incorporation of Al 2 O 3 nanofibers. A combination of PVDF-HFP, EMIMTFSI and LiTFSI with 3 wt% Al 2 O 3 nanofibers has been prepared through solution casting technique. The room temperature ionic conductivity of PVDF-HFP: ILs electrolyte (45:55, weight ratio of 0.82) (GPE) is found to be 2.7 × 10 –5 S cm –1 , which increases up to 7.8 × 10 –5 S cm –1 in Al 2 O 3 containing GPE (Al-GPE). Pulsed field gradient (PFG) NMR results validate the increased ionic conductivity observed in Al-GPE. We found that the diffusivity of Li + , TFSI – and EMIM + increases when Al 2 O 3 nanofibers are well-distributed in the GPE matrix. The surface morphology and the amorphicity of GPEs are examined through SEM and XRD analyses. Lastly, the local structure of Al 2 O 3 fibers and the molecular-level interactions of ions with polymer, and their effect on the diffusivity of ions are established through solid-state NMR detecting 27 Al, 1 H, 13 C, 19 F nuclei including 2D 13 C{ 1 H} HETCOR NMR experiments. The 13 C DPMAS and CPMAS experiments highlight the dynamic heterogeneity associated with the ions that are embedded in the rigid and the mobile phase of GPEs. While some of the ionic species strongly interact with polymer chains in the rigid environment, the majority of them reside in the mobile phase and contribute to the overall increased conductivity. Most importantly, Al 2 O 3 nanofibers significantly affect the dynamics of ionic species that are present in the mobile phase between the polymer chains.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Statistical chronometry of meteorites. I. A Test of 26 Al homogeneity and the Pb-Pb age of the solar system’s $t=0$

Here, we use rapidly cooled achondrites to test the assumption of 26 Al homogeneity in the solar nebula, by checking if there is a single value of t SS , the absolute “Pb-Pb” age of the Solar System’s t=0, that makes concordant their ages from the Al-Mg and Pb-Pb systems. We find that values t SS =4568.42 ± 0.24 Myr do make these ages concordant, and therefore the hypothesis of homogeneous 26 Al is not falsified. This age, defined to be when the solar nebula had ( 26 Al/ 27 Al) = 5.23 × 10 –5 , is significantly older than the ≈ 4567.3 Myr inferred from direct measurements of Pb-Pb ages in CAIs. Discrepancies between the Al-Mg and Pb-Pb chronometers in chondrules and CAIs have previously been interpreted as arising from heterogeneities in 26 Al, under the presumption that the Al-Mg and Pb-Pb systems in CAIs closed simultaneously. We examine this assumption and show that resetting is to be expected in CAIs. In particular, we quantitatively demonstrate that it is plausible that Pb-Pb ages of CAIs were reset at late times, without resetting the earlier Al-Mg ages, if they were transiently heated in the same manner as chondrules. We critically examine Pb-Pb isochrons, refining data and suggesting best practices for their calculation and reporting. We advocate reporting chronometry as times of formation after t=0 rather than absolute ages, as only the former is useful for astrophysical models of the solar nebula. We advocate averaging of multiple samples, rather than anchoring to individual meteorites, to improve precision.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

Equation of State and Spin Crossover of (Al, Fe)–Phase H

The transport of hydrogen into Earth's deep interior may have an impact on lower mantle dynamics as well as on the seismic signature of subducted material. Due to the stability of the hydrous phases δ-AlOOH (delta phase), MgSiO 2 (OH) 2 (phase H), and ε-FeOOH at high temperatures and pressures, their solid solutions may transport significant amounts of hydrogen as deep as the core-mantle boundary. Here we have constrained the equation of state, including the effects of a spin crossover in the Fe 3+ atoms, of (Al, Fe)-phase H: Al 0.84 Fe 3+ 0.07 Mg 0.02 Si 0.06 OOH, using powder X-ray diffraction measurements to 125 GPa, supported by synchrotron Mössbauer spectroscopy measurements on (Al, Fe)-phase H and δ-(Al, Fe)OOH. The changes in spin state of Fe 3+ in (Al, Fe)-phase H results in a significant decrease in bulk sound velocity and occurs over a different pressure range (48–62 GPa) compared with δ-(Al, Fe)OOH (32–40 GPa). Changes in axial compressibilities indicate a decrease in the compressibility of hydrogen bonds in (Al, Fe)-phase H near 30 GPa, which may be associated with hydrogen bond symmetrization. The formation of (Al, Fe)-phase H in subducted oceanic crust may contribute to scattering of seismic waves in the mid-lower mantle (~1,100–1,550 km). Accumulation of 1–4 wt.% (Al, Fe)-phase H could reproduce some of the seismic signatures of large, low seismic-velocity provinces. Our results suggest that changes in the electronic structure of phases in the (δ-AlOOH)-(MgSiO 2 (OH) 2 )-(ε-FeOOH) solid solution are sensitive to composition and that the presence of these phases in subducted oceanic crust could be seismically detectable throughout the lower mantle.

58 GEOSCIENCES↗
DOE OSTI2021

Forming mechanism of equilibrium and non-equilibrium metallurgical phases in dissimilar aluminum/steel (Al–Fe) joints

Abstract Forming metallurgical phases has a critical impact on the performance of dissimilar materials joints. Here, we shed light on the forming mechanism of equilibrium and non-equilibrium intermetallic compounds (IMCs) in dissimilar aluminum/steel joints with respect to processing history (e.g., the pressure and temperature profiles) and chemical composition, where the knowledge of free energy and atomic diffusion in the Al–Fe system was taken from first-principles phonon calculations and data available in the literature. We found that the metastable and ductile (judged by the presently predicted elastic constants) Al 6 Fe is a pressure ( P ) favored IMC observed in processes involving high pressures. The MoSi 2 -type Al 2 Fe is brittle and a strong P -favored IMC observed at high pressures. The stable, brittle η-Al 5 Fe 2 is the most observed IMC (followed by θ-Al 13 Fe 4 ) in almost all processes, such as fusion/solid-state welding and additive manufacturing (AM), since η-Al 5 Fe 2 is temperature-favored, possessing high thermodynamic driving force of formation and the fastest atomic diffusivity among all Al–Fe IMCs. Notably, the ductile AlFe 3 , the less ductile AlFe, and most of the other IMCs can be formed during AM, making AM a superior process to achieve desired IMCs in dissimilar materials. In addition, the unknown configurations of Al 2 Fe and Al 5 Fe 2 were also examined by machine learning based datamining together with first-principles verifications and structure predictions. All the IMCs that are not P- favored can be identified using the conventional equilibrium phase diagram and the Scheil-Gulliver non-equilibrium simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Microstructure and properties of additively manufactured Al–Ce–Mg alloys

Additive manufacturing of aluminum alloys is largely dominated by a near-eutectic Al-Si compositions, which are highly weldable, but have mechanical properties that are not competitive with conventional wrought Al alloys. In addition, there is a need for new Al alloys with improved high temperature properties and thermal stability for applications in the automotive and aerospace fields. In this work, we considered laser powder bed fusion additive manufacturing of two alloys in the Al–Ce–Mg system, designed as near-eutectic (Al–11Ce–7Mg) and hyper-eutectic (Al–15Ce–9Mg) compositions with respect to the binary L → Al + Al 11 Ce eutectic reaction. The addition of magnesium is used to promote solid solution strengthening. A custom laser scan pattern was used to reduce the formation of keyhole porosity, which was caused by excessive vaporization due to the high vapor pressure of magnesium. The microstructure and tensile mechanical properties of the alloys were characterized in the as-fabricated condition and following hot isostatic pressing. The two alloys exhibit significant variations in solidification structure morphology. These variations in non-equilibrium solidification structure were rationalized using a combination of thermodynamic and thermal modeling. Both alloys showed higher yield strength than AM Al-10Si-Mg for temperatures up to 350 °C and better strength retention at elevated temperatures than additively manufactured Scalmaloy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(SO6)2 by Materials Project

Al(SO5)2O2 crystallizes in the orthorhombic Pnma space group. The structure is two-dimensional and consists of four oxygen molecules and two Al(SO5)2 sheets oriented in the (0, 0, 1) direction. In each Al(SO5)2 sheet, Al is bonded to six O atoms to form AlO6 octahedra that share corners with four equivalent SO4 tetrahedra. There are a spread of Al–O bond distances ranging from 1.88–1.92 Å. S is bonded to four O atoms to form SO4 tetrahedra that share corners with two equivalent AlO6 octahedra. The corner-sharing octahedra tilt angles range from 42–46°. There are a spread of S–O bond distances ranging from 1.46–1.51 Å. There are five inequivalent O sites. In the first O site, O is bonded in a distorted bent 120 degrees geometry to one Al and one S atom. In the second O site, O is bonded in a single-bond geometry to one S atom. In the third O site, O is bonded in a single-bond geometry to one Al atom. In the fourth O site, O is bonded in a bent 150 degrees geometry to one Al and one S atom. In the fifth O site, O is bonded in a single-bond geometry to one S atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Ge)3 by Materials Project

Al(V4Ge)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Ge atoms. There are a spread of V–V bond distances ranging from 2.39–2.93 Å. Both V–Al bond lengths are 2.67 Å. Both V–Ge bond lengths are 2.67 Å. In the second V site, V is bonded in a 6-coordinate geometry to six V and four Ge atoms. There are one shorter (2.39 Å) and four longer (2.92 Å) V–V bond lengths. All V–Ge bond lengths are 2.67 Å. In the third V site, V is bonded in a 6-coordinate geometry to ten V, one Al, and three Ge atoms. There are a spread of V–V bond distances ranging from 2.38–2.93 Å. The V–Al bond length is 2.67 Å. All V–Ge bond lengths are 2.67 Å. In the fourth V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Ge atoms. There are one shorter (2.38 Å) and one longer (2.39 Å) V–V bond lengths. Both V–Al bond lengths are 2.67 Å. Both V–Ge bond lengths are 2.67 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to six V and four Ge atoms. Both V–V bond lengths are 2.39 Å. All V–Ge bond lengths are 2.67 Å. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent GeV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent GeV12 cuboctahedra. There are two inequivalent Ge sites. In the first Ge site, Ge is bonded to twelve V atoms to form GeV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent GeV12 cuboctahedra, and faces with eight equivalent GeV12 cuboctahedra. In the second Ge site, Ge is bonded to twelve V atoms to form GeV12 cuboctahedra that share edges with six equivalent GeV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent GeV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Si)3 by Materials Project

Al(V4Si)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Si atoms. There are a spread of V–V bond distances ranging from 2.32–2.91 Å. Both V–Al bond lengths are 2.66 Å. Both V–Si bond lengths are 2.63 Å. In the second V site, V is bonded in a 6-coordinate geometry to six V and four Si atoms. There are one shorter (2.39 Å) and four longer (2.88 Å) V–V bond lengths. There are two shorter (2.63 Å) and two longer (2.65 Å) V–Si bond lengths. In the third V site, V is bonded in a 6-coordinate geometry to ten V, one Al, and three Si atoms. There are a spread of V–V bond distances ranging from 2.32–2.95 Å. The V–Al bond length is 2.70 Å. There are one shorter (2.61 Å) and two longer (2.63 Å) V–Si bond lengths. In the fourth V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Si atoms. There are one shorter (2.27 Å) and one longer (2.45 Å) V–V bond lengths. Both V–Al bond lengths are 2.66 Å. Both V–Si bond lengths are 2.63 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to six V and four Si atoms. There are one shorter (2.35 Å) and one longer (2.38 Å) V–V bond lengths. There are two shorter (2.63 Å) and two longer (2.65 Å) V–Si bond lengths. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent SiV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent SiV12 cuboctahedra. There are two inequivalent Si sites. In the first Si site, Si is bonded to twelve V atoms to form SiV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent SiV12 cuboctahedra, and faces with eight equivalent SiV12 cuboctahedra. In the second Si site, Si is bonded to twelve V atoms to form SiV12 cuboctahedra that share edges with six equivalent SiV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent SiV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Sn)3 by Materials Project

Al(V4Sn)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to six V, two equivalent Al, and two equivalent Sn atoms. There are a spread of V–V bond distances ranging from 2.27–3.02 Å. Both V–Al bond lengths are 2.72 Å. Both V–Sn bond lengths are 2.79 Å. In the second V site, V is bonded in a 6-coordinate geometry to two V and four Sn atoms. The V–V bond length is 2.46 Å. All V–Sn bond lengths are 2.76 Å. In the third V site, V is bonded in a 6-coordinate geometry to four V, one Al, and three Sn atoms. There are a spread of V–V bond distances ranging from 2.41–2.91 Å. The V–Al bond length is 2.65 Å. There are two shorter (2.78 Å) and one longer (2.81 Å) V–Sn bond lengths. In the fourth V site, V is bonded in a 3-coordinate geometry to ten V, two equivalent Al, and two equivalent Sn atoms. There are one shorter (2.28 Å) and one longer (2.67 Å) V–V bond lengths. Both V–Al bond lengths are 2.72 Å. Both V–Sn bond lengths are 2.78 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to two equivalent V and four Sn atoms. There are one shorter (2.47 Å) and one longer (2.48 Å) V–V bond lengths. There are two shorter (2.75 Å) and two longer (2.76 Å) V–Sn bond lengths. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent SnV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent SnV12 cuboctahedra. There are two inequivalent Sn sites. In the first Sn site, Sn is bonded to twelve V atoms to form SnV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent SnV12 cuboctahedra, and faces with eight equivalent SnV12 cuboctahedra. In the second Sn site, Sn is bonded to twelve V atoms to form SnV12 cuboctahedra that share edges with six equivalent SnV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent SnV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tribological behaviors of nanotwinned Al alloys

Wear-induced damages cause significant materials loss each year. Al alloys are widely used by industry but usually have low wear resistance. Here, we compare the tribological behaviors of ultrafine grained Al, a nanoprecipitate hardened Al 7075 alloy and nanotwinned Al–Ni alloys using the nanoscratch. The nanotwinned Al–Ni alloys exhibit lower coefficient of friction and much greater wear resistance than the Al and Al 7075 alloys. Additionally, the enhanced wear properties of Al–Ni alloys arise from their high strength and the evolution of nanotwinned microstructures into gradient nanograins during wear. These findings on fundamental wear mechanisms in nanotwinned alloys may advance the discovery of wear-resistant metallic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mineralogical and isotopic constraints on early, high-temperature events and reservoirs recorded in the interior of a Type B Ca-Al-rich inclusion from the reduced CV3 chondrite Vigarano

A coordinated mineralogical and oxygen and Al-Mg isotopic study of a Type B Ca-Al-rich inclusion (CAI) from the reduced CV3 chondrite Vigarano was carried out using electron microprobe analysis, transmission electron microscopy, and secondary ion mass spectrometry. This CAI, a once molten igneous object, shows heterogeneous oxygen isotopic compositions among its constituent mineral phases. Spinel is uniformly 16 O-rich with Δ 17 O ≤ −23 ‰. The Δ 17 O values of Al,Ti-diopside in the CAI core range from −11 ‰ to −18 ‰, which are positively correlated with its TiO 2 contents, whereas diopside in the Wark–Lovering (WL) rim is 16 O-rich with Δ 17 O = −23 ‰. Melilite in the CAI mantle shows Δ 17 O values ≤ −10 ‰ only when Åk <15 but becomes more 16 O-poor (Δ 17 O = −3 ‰ to −9 ‰) when Åk >15 . These correlated chemical and oxygen isotopic variations were likely established during crystallization of melilite and Al,Ti-diopside from a partial melt, while spinel preserves the original 16 O-rich composition of the CAI precursor. We infer that a partial melt was isotopically evolving from 16 O-rich to 16 O-poor during melilite crystallization, then back to 16 O-rich during Al,Ti-diopside crystallization via exchange with different gas reservoirs of 16 O-poor and 16 O-rich compositions during heating event(s). Our Al-Mg isotopic measurements of the CAI core and mantle define a single isochron with an inferred initial 26 Al/ 27 Al ratio of (4.93 ± 0.18) × 10 −5 , indistinguishable from that of the WL rim. This indicates that multiple high-temperature events and oxygen isotope exchange with isotopically distinct gas reservoirs occurred rapidly during the CAI formation.

Al-Mg isotopic systematic↗
DOE OSTI2021

Effects of aluminum content on thermoelectric performance of Al x CoCrFeNi high-entropy alloys

Introducing a non-regular distribution in the mass and bonding by including distinctly different elements can reduce the phonon transport even within structurally well-ordered materials. These distributions are a quality of all high-entropy alloys (HEAs), however the inclusion of aluminum in Al x CoCrFeNi is particularly impactful due to the large mismatch in atomic mass with other components. The resultant low phonon conductivity is a requirement for high thermoelectric performance, motivating the investigation of the effects of Al content on phonon transport as well as other thermoelectric properties. This work examines the phonon and electron transport and thermoelectric conversion properties with various Al contents (0 ≤ x Al ≤ 2) in this Cantor alloy using first-principles calculations, molecular dynamics, and semi-classical Boltzmann transport theory. The calculated phonon density of states and thermoelectric properties present reasonable agreements with experiments, including neutron scattering. A large reduction of phonon conductivity (k L ) is observed even with low x Al s, which we attribute to effective phonon scatterings by the large mass mismatch. However, its temperature dependence is not significant, demonstrating a minor contribution of interphonon scattering. In contrast, electrical conductivity (σ) and Seebeck coefficient (S) increase with temperature at higher x Al s with body-centered cubic structures. Therefore, the thermoelectric figure of merit (ZT) of Al x CoCrFeNi HEAs is enhanced by increasing the Al content mainly due to the increase of the thermoelectric power factor (σS 2 ) at high temperatures, while at low temperatures the phonon-scattering enhancement by mass mismatch is also important.

36 MATERIALS SCIENCE↗