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At least 163 records · Page 9

A 2.3-GHz low-noise cryo-FET amplifier

A cryogenic cooled, low-noise Field Effect Transistor (FET) amplifier assembly for use at 2.2 to 2.3 GHz was developed for the DSN to meet the requirements of a Very Long Baseline Interferometry (VLBI) upgrade. An amplifier assembly was developed at JPL that uses a commercial closed-cycle helium refrigerator (CCR) to cool a FET amplifier to an operating temperature of 15 K. A cooled probe waveguide-to-coaxial transition similar to that used in the research and development Ultra-Low-Noise S-band Traveling Wave Maser (TWM) is used to minimize input line losses. Typical performance includes an input flange equivalent noise contribution of 14.5 K, a gain slope of less than 0.05 dB/MHz across a bandwidth of 2.2 to 2.3 GHz, an input VSWR of 1.5:1 at 2.25 GHz, and an insertion gain of 45 + or - 1 dB across the bandwidth of 2.2 to 2.3 GHz. Three 2.3 GHz FET/CCR assemblies were delivered to the DSN in the spring of 1987.

Loreman, J.↗

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Sokolov, V.↗

Direct solar-pumped iodine laser amplifier

A XeCl laser which was developed earlier for an iodine laser oscillator was modified in order to increase the output pulse energy of XeCl laser so that the iodine laser output energy could be increased. The electrical circuit of the XeCl laser was changed from a simple capacitor discharge circuit of the XeCl laser to a Marx system. Because of this improvement the output energy from the XeCl laser was increased from 60 mj to 80 mj. Subsequently, iodine laser output energy was increased from 100 mj to 3 mj. On the other hand, the energy storage capability and amplification characteristics of the Vortek solar simulator-pumped amplifier was calculated expecting the calculated amplification factor is about 2 and the energy extraction efficiency is 26 percent due to the very low input energy density to the amplifier. As a result of an improved kinetic modeling for the iodine solar simulator pumped power amplifier, it is found that the I-2 along the axis of the tube affects seriously the gain profile. For the gas i-C3F7I at the higher pressures, the gain will decrease due to the I-2 as the pumping intensity increases, and at these higher pressures an increase in flow velocity will increase the gain.

Han, Kwang S.↗

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Chen, C.-C.↗

High-performance Ka-band and V-band HEMT low-noise amplifiers

Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB at 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver applications.

Duh, K. H. George↗

The 60 GHz solid state power amplifier

A new amplifier architecture was developed during this contract that is superior to any other solid state approach. The amplifier produced 6 watts with 4 percent efficiency over a 2 GHz band at 61.5 GHz. The unit was 7 x 9 x 3 inches in size, 5.5 pounds in weight, and the conduction cooling through the baseplate is suitable for use in space. The amplifier used high efficiency GaAs IMPATT diodes which were mounted in 1-diode circuits, called modules. Eighteen modules were used in the design, and power combining was accomplished with a proprietary passive component called a combiner plate.

Mcclymonds, J.↗

A cooled 1- to 2-GHz balanced HEMT amplifier

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

G. G. Ortiz↗

High-power and high-spatial-coherence broad-area power amplifier

A broad-area AlGaAs amplifier operating CW has delivered 425 mW of total power with 342 mW in a single lobe diverging at 1.02 times the diffraction limit (FWHM 0.483 deg, 87.4-micron actual aperture) for a master oscillator input power of 70 mW. The spatial coherence of the amplifier output is 0.97, and the mutual spatial coherence between the oscillator and the amplifier is 0.96.

Andrews, John R.↗

Cooled Low-Noise HEMT Microwave Amplifiers

Prototype cooled low-noise microwave amplifiers based on high-electron-mobility transistors (HEMT's) considered as replacements for cooled ruby masers used as low-noise receiver-front-end amplifiers in communications, radio science, radar systems, radio astronomy, and telemetry. HEMT amplifier operates at 12 K, requires less cooling power and operates at lower cost with simpler, more-reliable cooling system.

Bautista, J. Javier↗

Baseband pulse shaping techniques for nonlinearly amplified pi/4-QPSK and QAM systems

A new generation of multi-stage pi/4-shifted QPSK and of superposed quadrature-amplitude-modulated (SQAM) modulators-coherent demodulators (modems) and of continuous phase modulated (CPM)-gaussian premodulation filtered minimum-shift-keying (MGMSK) systems is proposed and studied. These modems will lead to bandwidth and power efficient satellite communications systems designs. As an illustrative application, a baseband processing technique pi/4-controlled transition PSK (pi/4-CTPSK) is described. To develop a cost and power efficient design strategy, we assume that nonlinear, fully saturated high power amplifiers (HPA) are utilized in the satellite earth station transmitter and in the satellite transponder. Modem structures which could lead to application specific integrated circuit (ASIC) satellite on-board processing universal modem applications are also considered. Multistate GMSK (i.e., MGMSK) signal generation methods by means of two or more RF combined nonlinearly amplified SQAM modems and by one multistate (in-phase and quadrature-baseband premodulation filtered-superposed) SQAM architecture and one RF nonlinear amplifier are studied. During the SQAM modem development phase we investigate the potential system advantages of the pi/4-shifted logic. The bandwidth efficiency of the proposed multistate GMSK and baseband filtered PAM-FM modulator (a new class in the CPM family) will be significantly higher than that of conventional G-MSK systems. To optimize the practical P(sub e) = f((E sub b)/(N sub o)) performance we consider improved coherent demodulation MGMSK structures such as deviated-frequency locking coherent demodulators. For relative low bit rate SATCOM applications, e.g., bit rates less than 300 kb/s, phase noise tracking cancellation (for fixed site earth station) and phase noise cancellation as well as Doppler compensation (for satellite to mobile earth station) applications may be required. We study digital channel sounding methods which could cancel the phase noise-caused degradations of CPM and GMSK modems.

Feher, Kamilo↗

Quantum spatial propagation of squeezed light in a degenerate parametric amplifier

Differential equations which describe the steady state spatial evolution of nonclassical light are established using standard quantum field theoretic techniques. A Schroedinger equation for the state vector of the optical field is derived using the quantum analog of the slowly varying envelope approximation (SVEA). The steady state solutions are those that satisfy the time independent Schroedinger equation. The resulting eigenvalue problem then leads to the spatial propagation equations. For the degenerate parametric amplifier this method shows that the squeezing parameter obey nonlinear differential equations coupled by the amplifier gain and phase mismatch. The solution to these differential equations is equivalent to one obtained from the classical three wave mixing steady state solution to the parametric amplifier with a nondepleted pump.

Deutsch, Ivan H.↗

Self-Amplified Optical Pattern Recognizer

Self-amplified optical pattern recognizers developed for use in recognition of patterns, in optical computing, and in optoelectronic neural networks. In recognizer, photorefractive crystal serves as medium in which one holographically records diffraction-grating filter representing pattern with which recognition sought. Apparatus "self-amplified" because signal amplified within filter to many orders of magnitude greater than in prior optical pattern recognizers. Basic principle of operation applicable to many types of correlation filters, including (but not limited to) Vander Lugt matched filters, joint-transform filters, and phase-only filters.

Liu, Hua-Kuang↗

Annual, orbital, and enigmatic variations in tropical oceanography recorded by the Equatorial Atlantic amplifier

Equatorial Atlantic surface waters respond directly to changes in zonal and meridional lower tropospheric winds forced by annual insolation. This mechanism has its maximum effect along the equatorial wave guide centered on 10 deg W. The result is to amplify even subtle tropical climate changes such that they are recorded by marked amplitude changes in the proxy signals. Model realizations, NCAR AGCM and OGCM for 0 Ka and 126 Ka (January and July), and paleoceanographic proxy data show that these winds are also forced by insolation changes at the orbital periods of precession and obliquity. Perhelion in boreal summer produces a strengthened monsoon, e.g., increase meridional and decrease zonal wind stress. This reduces oceanic Ekman divergence and thermocline/nutricline shallowing. The result, in the equatorial Atlantic, is reduced primary productivity and higher euphotic zone temperatures; vice versa for perihelion in boreal winter. Perihelion is controlled by precession. Thus, the dominant period in spectra from a stacked SST record (0-252 Ka BP) at the site of the equatorial Atlantic amplifier is 23 Ky (53 percent of the total variance). This precessional period is coherent (k = 0.920) and in phase with boreal summer insolation. Oscillations of shorter period are present in records from cores sited beneath the amplifier region. These occur between 12.5 and 74.5 Ka BP, when eccentricity modulation of precession is at a minimum. Within this time interval there are 21 cycles with mean periods of 3.0 plus or minus 0.5 Ky. Similar periods have been documented from high latitude regions, e.g., Greenland ice cores from Camp Century. The Camp Century signal in this same time interval contains 21 cycles. A subjective correlation was made between the Camp Century and the equatorial records; the signals were statistically similar, r = 0.722 and k = 0.960.

Mcintyre, Andrew↗

Coherent summation of saturated AlGaAs amplifiers

Coherent summation of the output of two saturated traveling-wave amplifiers, each injected from a common semiconductor laser and all operated CW, has resulted in a single diffraction-limited beam containing 93 percent of the power originally contained in the two individual amplified beams. The 372 mW of power in a single diffraction-limited lobe is a 1.5-fold enhancement over the power available from a single amplifier.

Schuster, Gregory L.↗

Holmium YLF amplifier performance and the prospects for multi-Joule energies using diode-laser pumping

Laser studies were performed to examine the amplifier characteristics of holmium-doped yttrium lithium fluoride (YLF) at 300 K. An inversion ratio of 0.37 was reached resulting in a measured small-signal gain coefficient of 0.50/cm. In a flashlamp pumping experiment, an output energy of 240 mJ was achieved for 38.5 mJ of input energy resulting in a large gain of 6.2. An amplifier model was developed for diode laser pumping and adapted to consider this flashlamp-pumped case. There is good agreement between the theory and experiment. Multipass amplifier calculations using the model suggest that the Ho: Tm: YLF laser crystal can support a 12 percent electrical to optical efficiency at 300 K even in the presence of upconversion.

Storm, Mark E.↗

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Yu, A. W.↗

Isolation Amplifier Based On Sigma-Delta Modulation

Improved isolation amplifier transmits dc or low-frequency analog signal by use of digital pulses. Relatively imprecise digital pulses convey analog signal with relatively high precision. Amplifier implements sigma-delta modulation scheme. Circuit used wherever conventional amplifier needed. Includes medical instrumentation, switching-type power supplies, and other applications in which input voltages must be measured in presence of large common-mode voltages.

Harres, Daniel N.↗

Integrated CMOS RF amplifier

This paper reports an integrated 2.0 micron CMOS RF amplifier designed for amplification in the 420-450 MHz frequency band. Design techniques are shown for the test amplifier configuration. Problems of decreased amplifier bandwidth, gain element instability, and low Q values for the inductors were encountered. Techniques used to overcome these problems are discussed. Layouts of the various elements are described and a summary of the simulation results are included. Test circuits have been submitted to MOSIS for fabrication.

Charity, C.↗