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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Cyclotron Road Partnership (CRADA Final Report)

The Cyclotron Road program was launched in 2015 by LBNL, with support from the DOE Advanced Manufacturing Office (AMO), to accelerate technical innovation in the energy sector. The program brought scientist-entrepreneurs to LBNL to access unique research assets and expertise. In 2016, LBNL partnered with Activate Global, Inc., a 501(c)(3) non-profit, to expand the program and provide enhanced access to capital and business support services. Under this Cooperative Research and Development Agreement (CRADA), LBNL provided technical support and expertise, while Activate engaged with private sector, philanthropic, and government partners to support innovators and research-phase small businesses, aiming to translate high-impact materials and manufacturing technologies from lab to market. The program received funding from various sponsors, including the DOE, DARPA, and the California Energy Commission, and was managed through a collaborative framework that maintained accountability by the participant organization and Berkeley Lab regarding roles and tasks relevant to this collaboration.

99 GENERAL AND MISCELLANEOUS↗
NASA NTRS1972

Development of lithium doped radiation resistent solar cells

Lithium-doped solar cells have been fabricated with initial lot efficiencies averaging 11.9 percent in an air mass zero (AMO) solar simulator and a maximum observed efficiency of 12.8 percent. The best lithium-doped solar cells are approximately 15 percent higher in maximum power than state-of-the-art n-p cells after moderate to high fluences of 1-MeV electrons and after 6-7 months exposure to low flux irradiation by a Sr-90 beta source, which approximates the electron spectrum and flux associated with near Earth space. Furthermore, lithium-doped cells were found to degrade at a rate only one tenth that of state-of-the-art n-p cells under 28-MeV electron irradiation. Excellent progress has been made in quantitative predictions of post-irradiation current-voltage characteristics as a function of cell design by means of capacitance-voltage measurements, and this information has been used to achieve further improvements in lithium-doped cell design.

Berman, P. A.↗
NASA NTRS1972

Development and pilot line production of lithium doped silicon solar cells

The work performed over the period of September 1971 to August 1972 to develop production processes for fabrication of lithium doped P/N cells is described. The BCl3 diffusion without 02 was selected as the optimum diffusion process for fabrication of lithium doped cells. An 8-2-7 (warm up - deposition - drive-in time in minutes) diffusion schedule at 1055 C was used for the first two lots (300 cells each) delivered to JPL. Cell efficiencies ranged from 11.0 to 13.7% based on an AMO of 135.3 mW/sq cm. These high efficiencies were obtained using from 10 to 40 cells per boron diffusion; increasing the quantity beyond 40 resulted in lower outputs. At this point, the emphasis was placed on investigation of a BCl3 with 02 diffusion. Through evaluation of the effects of diffusion time and temperature, gas flow rates, and desposition plus drive-in vs. continuous deposition and no drive-in cycles, diffusion parameters were determined which produced short circuit currents of 136 + or - 4 mA for ten cells spaced along 12 in. of the diffusion boat. The quantity was increased to 60, 100, and 150 cell diffusions with no more variation in cell short circuit current than observed with 10 cells.

Payne, P. A.↗
NASA NTRS1973

Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

Nicoletta, C. A.↗
NASA NTRS1973

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Nicoletta, C. A.↗
NASA NTRS1973

Development of gallium arsenide solar cells

The potential of ion implantation as a means to the development of high efficiency gallium arsenide solar cells is investigated. Summaries are included of the results of computer calculations of GaAs cell characteristics, based on a model which includes the effects of surface recombination, junction space-charge region recombination, and built-in fields produced by nonuniform doping in the region; of the fabrication technology developed under the program; and of the results of electrical and optical measurements on the samples produced during the program. It was determined that measured AMO efficiencies were more than a factor of two lower than the calculated values.

Source record↗
NASA NTRS1973

The multiple junction edge illuminated solar cell

The multiple junction edge illuminated solar cell was devised for high voltage low current applications. Devices to be flight tested in early 1974 with 96 series connected PNN+ junctions in a 2 cm X 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm cm silicon are presented and problem areas are discussed. An additional potential application of the M-J cell lies in ultilization of its high intensity performance that has been demonstrated at levels in excess of 100 AMO suns.

Sater, B. I.↗
NASA NTRS1973

The drift field model applied to the lithium-containing silicon solar cell

The drift field model used by Wolf to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or AMO sunlight. Voltages were calculated using an expression for the drift field diode saturation current derived here. The model, applied to the oxygen rich (C-13 group) lithium solar cells, was used to calculate the pre-and post-electron bombardment trends for lithium gradients in the range of 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Published experimental data characterizing these cells were used to tailor the model. The calculated trends are in reasonable agreement with the empirical data of Faith. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th power e/sq cm. Beyond this fluence it was necessary to include drift field removal effects.

Godlewski, M. P.↗
NASA NTRS1974

Methods of improving the efficiency of photovoltaic cells

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Loferski, J. J.↗
NASA NTRS1974

A theoretical analysis of the current-voltage characteristics of solar cells

The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

Hauser, J. R.↗
NASA NTRS1974

A miniature high voltage plasma interaction flight experiment - Project MINX

A miniature high-voltage array was fabricated, incorporating the multi-junction edge illuminated (MJC) cell technique. The array consists of 32 2x2.2 cm MJCs, series connected, capable of 1600 V open circuit at 1 AMO and 1.2 mA short circuit. A solid state, high-voltage relay is connected across each 4-cell subgroup of the array. It was built to test plasma current drain on space systems using high voltage as might occur when a high-voltage solar array is operated from low to synchronous orbit.

Riley, T. J.↗
NASA NTRS1974

The multiple junction edge illuminated solar cell

The multiple junction edge illuminated solar cell (M-J Cell) was devised for high voltage, low current applications. Devices to be flight-tested in early 1974 with 96 series-connected PNN+ junctions in a 2 cm x 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J Cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm-cm silicon are presented and problem areas are discussed. An additional potential application of the M-J Cell lies in utilization of its high-intensity performance that has been demonstrated at levels in excess of 100 AMO suns.

Sater, B. L.↗
NASA NTRS1975

A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell

A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.

Stirn, R. J.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1975

Low cost silicon solar arrays

Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%.

Ravi, K. V.↗
NASA NTRS1975

Low cost processes for solar-grade silicon

Upgrading metallurgical grade silicon is being pursued in four associated areas in order to improve the purity of the normally 98% material. The first two work areas involve purification of raw materials entering the process in addition to upgrading the arc furnace itself. The second two areas of process upgrading comprise improving the purity of the silicon after it leaves the arc furnace by reactive gas blowing and unidirectional freezing. The best cell produced to date was fabricated from MG-Si that had been blown with an O2-Cl2 mixture, unidirectionally solidified, and 6-float-zone passed (to determine a base boron level of 0.04 ohm/cm). The cell showed a 10.7% AMO efficiency. In the other processes category, the use of silicates as a silicon source and of electrolysis as a process were studied. The best electrolytic process uses a 1000 C fused salt of silica in cryolite.

Hunt, L. P.↗