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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thermal conductivity control by oxygen defect concentration modification in reducible oxides: The case of Pr{sub 0.1}Ce{sub 0.9}O{sub 2−δ} thin films

We demonstrate the impact on thermal conductivity of varying the concentration of oxygen vacancies and reduced cations in Pr{sub 0.1}Ce{sub 0.9}O{sub 2−δ} thin films prepared by pulsed laser deposition. The oxygen vacancy concentration is controlled by varying the oxygen partial pressure between 1 × 10{sup −4} and 1 atm at 650 °C. Corresponding changes in the oxygen non-stoichiometry (δ) are monitored by detecting the lattice parameters of the films with high-resolution X-ray diffraction, while the thermal properties are characterized by time-domain thermoreflectance measurements. The films are shown to exhibit a variation in oxygen vacancy content, and in the Pr{sup 3+}/Pr{sup 4+} ratio, corresponding to changes in δ from 0.0027 to 0.0364, leading to a reduction in the thermal conductivity from k = 6.62 ± 0.61 to 3.82 ± 0.51 W/m-K, respectively. These values agree well with those predicted by the Callaway and von Baeyer model for thermal conductivity in the presence of point imperfections. These results demonstrate the capability of controlling thermal conductivity via control of anion and cation defect concentrations in a given reducible oxide.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5 deep level defects, are aligned in the direction of the applied electric field and the equilibrium polarization can be reached in a relatively short time. When the polarization field is maintained, while cooling the temperature of sample to a sufficiently low degrees, the relaxation times of the aligned dipoles drastically increases. Practically, frozen internal electric field or electrets states remain inside the TlInS{sub 2}:La when the applied bias field is switched off. The influence of deep level defects on TSDC spectra of TlInS{sub 2}:La has been revealed for the first time.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Deconstructing dynamics of symmetry breaking

The Kibble–Zurek mechanism (KZM) successfully predicts the density of topological defects deposited by the phase transitions, but it is not clear why. Its key conjecture is that, near the critical point of the second-order phase transition, critical slowing down will result in a period when the system is too sluggish to follow the potential that is changing faster than its reaction time. The correlation length at the freeze-out instant $\hat{t}$ when the order parameter catches up with the posttransition broken symmetry configuration is then decisive, determining when the mosaic of broken symmetry domains locks in topological defects. To understand why the KZM works so well, we analyze the Landau–Ginzburg model and show why temporal evolution of the order parameter plays such a key role. In conclusion, the analytical solutions we obtain suggest experimentally accessible observables that can shed light on symmetry-breaking dynamics while testing the conjecture on which the KZM is based.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Damage formation, fatigue behavior and strength properties of ZrO{sub 2}-based ceramics

It is suggested that a non-destructive testing technique using a three-dimensional X-ray tomography be applied to detecting internal structural defects and monitoring damage formation in a ceramic composite structure subjected to a bending load. Three-point bending tests are used to investigate the fatigue behavior and mechanical and physical properties of medical-grade ZrO{sub 2}-based ceramics. The bending strength and flexural modulus are derived under static conditions at a loading rate of 2 mm/min. The fatigue strength and fatigue limit under dynamic loading are investigated at a frequency of 10 Hz in three stress ranges: 0.91–0.98, 0.8–0.83, and 0.73–0.77 MPa of the static bending strength. The average values of the bending strength and flexural modulus of sintered specimens are 43 MPa and 22 GPa, respectively. The mechanical properties of the ceramics are found to be similar to those of bone tissues. The testing results lead us to conclude that the fatigue limit obtained from 10{sup 5} stress cycles is in the range 33–34 MPa, i.e. it accounts for about 75% of the static bending strength for the test material.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Selenium Migration and Local Structures in Cu‐Doped CdSeTe Solar Cells after Aging

Selenium grading plays a critical role in state-of-the-art Cadmium Telluride photovoltaic cells by enhancing long-wavelength absorption and extending minority carrier lifetimes —key to enabling the current performance record of 23.08%. However, very little is understood about selenium motion. In this study, a comprehensive, multimodal, and multiscale approach is employed to investigate Se migration and local structural changes in copper (Cu)-doped CdSeTe solar cells subjected to accelerated stress. X-ray fluorescence (XRF) microscopy shows unexpected levels of Se diffusion after 500 h under heat (75°C) and light (0.8 suns, 80 mW/cm 2 ), suggesting the coexistence of fast and slow diffusion channels even at low temperatures, with unexpectedly low activation energies (<0.85 eV). X-ray Absorption Near Edge Structure (XANES) analysis indicates a preferential migration of Se atoms to anionic lattice sites and a reduction in Se-Cl co-passivation at Te-terminated dislocation cores. Furthermore, these findings point to a reconfiguration of Se local environments and highlight the potential role of extended structural defects in enabling Se transport at low temperatures. Additionally, XANES results suggest that the presence of metallic Cu across the absorber layer may contribute to back-contact degradation and reduced hole density in both fresh and aged devices.

14 SOLAR ENERGY↗
DOE OSTI2013

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H{sub 2} filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Mo-on-Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H{sub 2}-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H{sub 2} filled blisters across the outermost Mo-on-Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Morphology evolution in strain-compensated multiple quantum well structures

Morphology evolution in (In,Ga)As-Ga(As,P) strain-compensated multilayer structures is studied. The effects of nanoscale interface corrugation and phase separation are evident after the third period of the multilayer structure and become more pronounced with each new stack until the sixth period. Then, the interface stabilizes pointing to the formation of strain-balanced equilibrium interface structure. The epitaxial structure remains defect-free up to the maximum number (twenty) of periods studied. In a structure with a high lattice mismatch between the neighboring layers, In{sub 0.40}Ga{sub 0.60}As/GaAs{sub 0.85}P{sub 0.15}, clusters of dislocations are revealed already in the third period. The observed phenomena are critical for proper engineering of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phase equilibrium in argon films stabilized by homogeneous surfaces and thermodynamics of two-stage melting transition

Freezing of gases adsorbed on open surfaces (e.g., graphite) and in narrow pores is a widespread phenomenon which is a subject of a large number of publications. Modeling of the gas/liquid–solid transition is usually accomplished with a molecular simulation technique. However, quantitative analysis of the gas/liquid–solid coexistence and thermodynamic properties of the solid layer still encounters serious difficulties. This is mainly due to the effect of simulation box size on the lattice constant. Since the lattice constant is a function of loading and temperature, once the ordering transition has occurred, the simulation box size must be corrected in the course of simulation according to the Gibbs–Duhem equation. A significant problem is also associated with accurate prediction of the two-dimensional liquid–solid coexistence because of a small difference in densities of coexisting phases. The aim of this study is thermodynamic analysis of the two-dimensional phase coexistence in systems involving crystal-like free of defects layers in narrow slit pores. A special attention was paid to the determination of triple point temperatures. It is shown that intrinsic properties of argon monolayer adsorbed on the graphite surface are similar to those of isolated monolayer accommodated in the slit pore having width of two argon collision diameters. Analysis of the latter system is shown to be clearer and less time-consuming than the former one, which has allowed for explanation of the experimentally observed two-stage melting transition of argon monolayer on graphite without invoking the periodic surface potential modulation and orientational transition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Protection heater design validation for the LARP magnets using thermal imaging

Protection heaters are essential elements of a quench protection scheme for high-field accelerator magnets. Various heater designs fabricated by LARP and CERN have been already tested in the LARP high-field quadrupole HQ and presently being built into the coils of the high-field quadrupole MQXF. In order to compare the heat flow characteristics and thermal diffusion timescales of different heater designs, we powered heaters of two different geometries in ambient conditions and imaged the resulting thermal distributions using a high-sensitivity thermal video camera. We observed a peculiar spatial periodicity in the temperature distribution maps potentially linked to the structure of the underlying cable. Two-dimensional numerical simulation of heat diffusion and spatial heat distribution have been conducted, and the results of simulation and experiment have been compared. Imaging revealed hot spots due to a current concentration around high curvature points of heater strip of varying cross sections and visualized thermal effects of various interlayer structural defects. Furthermore, thermal imaging can become a future quality control tool for the MQXF coil heaters.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Leveraging Genetic-Background Effects in Saccharomyces cerevisiae To Improve Lignocellulosic Hydrolysate Tolerance

We report a major obstacle to sustainable lignocellulosic biofuel production is microbe inhibition by the combinatorial stresses in pretreated plant hydrolysate. Chemical biomass pretreatment releases a suite of toxins that interact with other stressors, including high osmolarity and temperature, which together can have poorly understood synergistic effects on cells. Improving tolerance in industrial strains has been hindered, in part because the mechanisms of tolerance reported in the literature often fail to recapitulate in other strain backgrounds. Here, we explored and then exploited variations in stress tolerance, toxin-induced transcriptomic responses, and fitness effects of gene overexpression in different Saccharomyces cerevisiae (yeast) strains to identify genes and processes linked to tolerance of hydrolysate stressors. Using six different S. cerevisiae strains that together maximized phenotypic and genetic diversity, first we explored transcriptomic differences between resistant and sensitive strains to identify common and strain-specific responses. This comparative analysis implicated primary cellular targets of hydrolysate toxins, secondary effects of defective defense strategies, and mechanisms of tolerance. Dissecting the responses to individual hydrolysate components across strains pointed to synergistic interactions between osmolarity, pH, hydrolysate toxins, and nutrient composition. By characterizing the effects of high-copy gene overexpression in three different strains, we revealed the breadth of the background-specific effects of gene fitness contributions in synthetic hydrolysate. Lastly, our approach identified new genes for engineering improved stress tolerance in diverse strains while illuminating the effects of genetic background on molecular mechanisms.

09 BIOMASS FUELS↗
NASA NTRS1975

Rough-to-smooth transition of an equilibrium neutral constant stress layer

Purpose of research on rough-to-smooth transition of an equilibrium neutral constant stress layer is to develop a model for low-level atmospheric flow over terrains of abruptly changing roughness, such as those occurring near the windward end of a landing strip, and to use the model to derive functions which define the extent of the region affected by the roughness change and allow adequate prediction of wind and shear stress profiles at all points within the region. A model consisting of two bounding logarithmic layers and an intermediate velocity defect layer is assumed, and dimensionless velocity and stress distribution functions which meet all boundary and matching conditions are hypothesized. The functions are used in an asymptotic form of the equation of motion to derive a relation which governs the growth of the internal boundary layer. The growth relation is used to predict variation of surface shear stress.

Logan, E., Jr.↗
DOE OSTI2016

Nonlinear dynamics of domain walls with cross-ties

The dynamic behavior of a domain wall with cross-ties is analyzed on the basis of micromagnetic simulation with exact allowance for all main (exchange, magnetoanisotropic, and magnetostatic) interactions in thin magnetically uniaxial ferromagnetic films with planar anisotropy. It is found that the peculiarities of motion of such domain walls are closely related to the behavior of topological defects in the magnetization distribution (generation, motion, and annihilation of vortex–antivortex pairs on the film surface and Bloch points). We observe three different regimes of motion (stationary, periodic, and turbulent regimes), each of which is realized in a certain range of fields oriented along the easy magnetization axis. It is shown that the experimentally observed dynamic bends of the walls with cross-ties are determined by the type of motion of vortices and antivortices. The velocities of domain walls in different regimes are calculated, and the dynamic configurations of the magnetization and existing dynamic transitions between them are investigated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Study of formation mechanism of incipient melting in thixo-cast Al–Si–Cu–Mg alloys

Mechanical properties of thixo-cast Al–Si–Cu–Mg alloys can be enhanced by T61 heat treatment. Copper and magnesium atoms in aluminum matrix can form homogeneously distributed precipitations after solution and aging treatment which harden the alloys. However, microsegregation of these alloying elements could form numerous tiny multi-compound phases during solidification. These phases could cause incipient melting defects in subsequent heat treatment process and degrade the macro-mechanical properties of productions. This study is to present heterogeneous distribution of Cu, Si, and Mg elements and formation of incipient melting defects (pores). In this study, incipient melting pores that occurred during solution treatment at various temperatures, even lower than common melting points of various intermetallic phases, were identified, in terms of a method of investigating the same surface area in the samples before and after solution treatment in a vacuum environment. The results also show that the incipient melting mostly originates at the clusters with fine intermetallic particles while also some at the edge of block-like Al{sub 2}Cu. The fine particles were determined being Al{sub 2}Cu, Al{sub 5}Cu{sub 2}Mg{sub 8}Si{sub 6} and Al{sub 8}Mg{sub 3}FeSi{sub 2}. Tendency of the incipient melting decreases with decreases of the width of the clusters. The formation mechanism of incipient melting pores in solution treatment process was discussed using both the Fick law and the LSW theory. Finally, a criterion of solution treatment to avoid incipient melting pores for the thixo-cast alloys is proposed. - Highlights: • In-situ comparison technique was used to analysis the change of eutectic phases. • The ralationship between eutectic phase size and incipient melting was studied. • Teat treatment criterion for higher incipient melting resistance was proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design and Analysis of an Advanced Three-Point Bend Test Approach for Miniature Irradiated Disk Specimens

Candidate tungsten armor materials in a magnetic confinement fusion device must be able to withstand thermal variation that leads to internal stresses caused by the impinging heat load. In addition, the thermomechanical properties of these materials are degraded by irradiation-induced defect accumulation. Fission reactor–based irradiation data are used to predict the fusion neutron damage and property change. This study examines the motivation and design of a custom-designed three-point bend test for neutron-irradiated disk specimens that are 3 mm in diameter to be able to define the flexural strength of advanced tungsten materials, alloys, and composites—and to the extent that embrittlement occurs after neutron irradiation. The theory provided shows a calculation for the flexural deflection and shear deflection due to the small-geometry constraints. A finite element deformation analysis is performed to evaluate the mechanical stress field of disk bend specimens. The stress values above 80% of the maximum stress are concentrated in 2.4 mm of the 3.0-mm length of the centerline across the tungsten disk diameter. A bend test fixture has been designed and fabricated to enable testing of these specimens with precisely engineered tolerance and minimal machine compliance. This fixture will be able to be placed inside a universal testing frame at elevated temperatures for the mechanical property evaluation of future neutron-irradiated disk specimens.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing

A two-step process using halogen based plasma etching combined with atmospheric pressure rapid thermal annealing has been used to synthesize few layer graphene films on 6H-SiC (0001) surfaces. In this process, the 6H-SiC substrates were etched under different plasma conditions to produce a carbon rich surface layer. This was followed by rapid thermal annealing in a flow of atmospheric pressure Ar to produce the graphene films. The effects of different etching conditions, heating rates, and average and maximum annealing temperatures were investigated. Changes in surface and near-surface composition after each step were characterized by x-ray photoelectron spectroscopy and overall film quality was assessed using Raman spectroscopy. Film defects associated with this synthesis method included a buffer layer between the SiC substrate and graphene as well as oxygen-based defects on the graphene surface. Electrical characterization of these films was performed using both two and four point methods. In the two point measurements, these films exhibited back-to-back Schottky behavior from which the Schottky barrier height, carrier density and mobility were determined. The four point measurements were used to determine the contact and film resistivity as well as the transfer length.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Vacancy complexes in Sb-doped SnO{sub 2}

MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗