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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Generation of THz transients by photoexcited single-crystal GaAs meso-structures

We report a sub-picosecond photoresponse and THz transient generation of GaAs single-crystal mesoscopic platelets excited by femtosecond optical pulses. Our structures were fabricated by a top-down technique, by patterning an epitaxial, 500-nm-thick GaAs film grown on top of an AlAs sacrificial layer and then transferring the resulting etched away 10 x 20-μm 2 platelets onto an MgO substrate using a micropipette. The freestanding GaAs devices, incorporated into an Au coplanar strip line, exhibited extremely low dark currents and ~0.4 % detection efficiency at 10 V bias. The all-optical, pump–probe carrier dynamics analysis showed that, for 800-nm-wavelength excitation, the intrinsic relaxation of photocarriers featured a 310-fs-wide transient with a 290 fs fall time. We have also carried out a femtosecond, timeresolved electro-optic characterization of our devices and recorded along the transmission line the electrical transients as short as ~600 fs, when the platelet was excited by a train of 100-fs-wide, 800-nm-wavelength optical laser pulses. The platelets have been also demonstrated to be very efficient generators of free-space propagating THz transients with the spectral bandwidth exceeding 2 THz.The presented performance of the epitaxial, freestanding GaAs meso-structured photodevices makes them uniquely suitable for THz-frequency optoelectronic applications, ranging from ultrafast photodetectors to THz-bandwidth optical-to-electrical transducers and photomixers.

42 ENGINEERING↗
DOE OSTI2018

The promise of solution-processed Fe 2 GeS 4 thin films in iron chalcogenide photovoltaics

The olivine Fe 2 GeS 4 , featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2 GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2 GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2 GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2 GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2 GeS 4 thin films as the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2 GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2 GeS 4 .

14 SOLAR ENERGY↗
DOE OSTI2019

Size, structure, and luminescence of Nd 2 Zr 2 O 7 nanoparticles by molten salt synthesis

Pyrochlore materials with novel properties are in demand with multifunctional applications such as optoelectronics, scintillator materials, and theranostics. Many reports have already indicated the importance of the synthesis technique for Nd 2 Zr 2 O 7 (NZO) nanoparticles (NPs); however, no explanation has been provided for the reason behind the nature of its phase selectivity. Here, we have explored the structural and optical properties of the NZO NPs synthesized by a molten salt synthesis method. We have synthesized size-tunable NZO NPs and correlated the particle size with their structural behavior and optical performance. All NZO NPs are stabilized in defect fluorite phase. Neutron diffraction provided insight on the behavior of oxygen in the presence of heavy atoms. We have collected bright amalgam of blue and green emission on UV irradiation due to the presence of oxygen vacancies from these NPs. We have carried out in situ XRD and Raman investigations to observe the temperature-induced phase transformation in a controlled argon environment. Interestingly, we have not observed phase change for the molten salt synthesized fluorite NZO NPs; however, we observed phase transformation from a precursor stage to pyrochlore phase by in situ XRD directly. Finally, these observations provide a new strategy to synthesize nanomaterials phase-selectively for a variety of applications in materials science.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mechanisms of mechanochemical synthesis of cesium lead halides: pathways toward stabilization of α-CsPbI 3

Cesium lead iodide with cubic perovskite structure (α-CsPbI 3 ) is gaining significant interest in photovoltaic applications due to its excellent absorbance of the visible solar light and other attractive optoelectronic properties. However, the synthesis of stable α-CsPbI 3 poses a significant challenge. Mechanochemical synthesis is emerging as a suitable method for the preparation of cesium lead halides. This work investigates the ball milling-induced synthesis of cesium lead halides perovskite phase using halide mixing or doping approaches. The synthesis in the CsI + PbI 2 , CsBr + PbBr 2 , CsBr + PbI 2 , and CsI + PbI 2 + NdI 3 mixtures and halide exchange reactions in the CsPbBr 3 + 3KI and CsBr + PbBr 2 + 3KI systems are investigated to elucidate the mechanism of this process. Then, CsPb(I 1–x Br x ) 3 and CsPb( 1–y )Nd y I 3 materials with different x and y ratios are prepared, and their stability is probed in the air using light absorption spectroscopy. These results suggest that Nd doping is more efficient in the stabilization of the perovskite structure than partial replacement of iodine with bromine. Microstructure observations reveal the existence of two different product formation mechanisms depending on the mechanical properties of reactants. The results reveal that the milling temperature has a significant impact on the reaction kinetics. Here, the produced particles nucleate and grow at the reactant interface and retard the synthesis reaction by creating a diffusion barrier. Extended milling reduces the product particle size and creates fresh contact between reactants, thus facilitating reaction completion.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ag-doped As–S–Se chalcogenide glasses: a correlative study of structural and dielectrical properties

This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The Optical Properties of Metamaterial-Superconductor Photonic Band Gap With/Without Defect Layer

In the present work, we have investigated theoretically the optical properties of a new one-dimensional defected photonic crystal structure (1DDPC). The structure is composed of alternating layers of metamaterial (double-negative material) and high Tc superconductor material called Hg1223 defected with a dielectric material (SiO{sub 2}) at the center of the structure. The transmittance spectra of the proposed structure are obtained by using the transfer matrix method (TMM). We noticed that multiple transmittance peaks within the photonic band gap (PBG) as the thickness of defect layer increases. The tunable filtering feature is obtained by varying the thicknesses of metamaterial and superconductor layer. In addition, the defect peak is red shifted as well as photonic band gap tuned to low-frequency region. Our structure is sensitive to the variation of the angle incidence. Also, defect mode shown to be blue shifted as the angle of incidence increases. The tunable filtering properties are very useful in the optoelectronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Synthesis and characterization of amorphous SiO 2 nanowires directly grown on Cu substrates

In this work, a novel procedure for the growth of Silica nanowires directly from Cu substrates is reported. The singlestep synthesis procedure consists of a thermal treatment at 900 °C in Ar-H 2 atmosphere, without the need for additional catalysts. Nanowires grow from Cu protrusions generated on the surface during annealing via Vapor–Liquid–Solid method, giving rise to a branched structure. These SiO 2 nanostructures present an amorphous structure as evidenced by transmission electron microscopy. Silica nanowires grown on Cu and Si substrates have been characterized by XPS. Additionally, room-temperature photoluminescence measurements show a blue-green emission peak at ca. 509 nm (2.44 eV) attributed to oxygen deficiencies in the structure. The success of this procedure allows for future possible incorporation of these nanowires in optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Millimeter-wave home area network prospect with cost-effective RoF links

The growth towards the millimeter-wave band in the home area networks (HAN) leads to high data rate transmission to satisfy the new user services. Unfortunately, the transmission coverage in this band is limited to short distances because of the strong air absorption and obstacles such as walls. The effort is then focused on the extension of the network coverage of the wireless link in this band. Solutions based on multiple connected access points to optical fibers are useful methods to ensure wireless connectivity to the entire home. For HAN applications, radio-over-fiber (RoF) using intensity modulation and direct detection technique is the mostly favorite technology for the transmission of a broadband wireless signal because dealing with a cost-effective solution. We investigate in this paper the performance of such RoF-wireless architecture with low-cost optoelectronic modules through the error vector magnitude (EVM) metric. The RoF links investigated are a directly modulated VCSEL with integrated photoreceiver module, an electroabsorption-modulated laser with PIN photodiode and a Mach–Zehnder Modulator with PIN photodiode. A simulation approach based on equivalent electrical circuit models of photonic components is developed in ADS (Advanced Design System) by using a co-simulation technique that combines both analog and digital signals. The downlink channel of the complete transmission system including wireless channel and frequency conversion circuits to millimeter-wave (mm-wave) band is studied by simulation. The obtained results of EVM show good performances of cost-effective links with QPSK and 16-QAM modulation over a dynamic range of 15 dB.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Influence of fluorine doped CdO thin films by an simplified spray pyrolysis technique using nebulizer

The Cadmium oxide (CdO) and Fluorine (F) doped CdO thin films were effectively synthesized on glass substrates for different F doping concentrations (2, 4, 6, 8 at.%) using nebulized spray pyrolysis technique. The XRD analysis showed that all the films were polycrystalline having cubic structure with (111) preferential orientation. It was seen from the SEM photographs that the doping causes remarkable changes in the surface morphology. EDAX analysis clearly confirmed that the presence of expected elements cadmium, oxygen and fluorine in the final product, in appropriate proportions. The electrical study showed that the minimum resistivity value of 1.9 × 10{sup −4} Ω cm with notable higher values of carrier concentration and mobility was achieved for 6 at.% of CdO:F film. Optical study exhibited that the band gap value of CdO film increases gradually with the increase in F-doping concentration, reaching maximum band gap value of 2.61 eV at 6 at.% and starts decreasing thereafter. Photoluminescence spectra depicted that the intensity of the emission peaks was significantly varied with doping concentrations. The high transparency, wide band gap energy, enhanced electrical properties and light sensitivity had been obtained infer that F-doped CdO thin films which find application in optoelectronic applications. Graphical abstract: .

36 MATERIALS SCIENCE↗
DOE OSTI2019

Energy efficient photonic millimeter-wave generation using cascaded polarization modulators

A filter-less millimeter-wave generation scheme consisting of four polarization modulators in series, each followed by a polarizer is proposed to achieve optoelectronic frequency octupling. The cascade of polarization modulator and polarizer provides an intensity modulator whose biasing condition can be set by the polarizer angle and polarization state of the input light to each polarization modulator. A theoretical analysis of the architecture is performed using a transfer function method and validated by industry-standard software simulation tools. The circuit shows high potential in achieving desired performance with lower input RF power when compared to the another configuration based on a generalized Mach–Zehnder interferometer structure. Although the operating range in terms of applied RF drive becomes narrow, low RF input operation can be achieved by this circuit. The effect of imbalances in the key circuit parameters is also investigated in terms of electrical side harmonic suppression ratio.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.

ALD↗
DOE OSTI2017

Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Solar Light Responsive Photocatalytic Activity of Reduced Graphene Oxide–Zinc Selenide Nanocomposite

Solution processable reduced graphene oxide–zinc selenide (RGO–ZnSe) nanocomposite has been successfully synthesized by an easy one-pot single-step solvothermal reaction. The RGO–ZnSe composite was characterized structurally and morphologically by the study of XRD analysis, SEM and TEM imaging. Reduction in graphene oxide was confirmed by FTIR spectroscopy analysis. Photocatalytic efficiency of RGO–ZnSe composite was investigated toward the degradation of Rhodamine B under solar light irradiation. Our study indicates that the RGO–ZnSe composite is catalytically more active compared to the controlled-ZnSe under the solar light illumination. Here, RGO plays an important role for photoinduced charge separation and subsequently hinders the electron–hole recombination probability that consequently enhances photocatalytic degradation efficiency. We expect that this type of RGO-based optoelectronics materials opens up a new avenue in the field of photocatalytic degradation of different organic water pollutants.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps

Unlike graphene sheets, graphene nanoribbons (GNRs) can exhibit semiconducting band gap characteristics that can be tuned by controlling impurity doping and the GNR widths and edge structures. However, achieving such control is a major challenge in the fabrication of GNRs. Chevron-type GNRs were recently synthesized via surface-assisted polymerization of pristine or N-substituted oligophenylene monomers. In principle, GNR heterojunctions can be fabricated by mixing two different monomers. In this paper, we report the fabrication and characterization of chevron-type GNRs using sulfur-substituted oligophenylene monomers to produce GNRs and related heterostructures for the first time. First-principles calculations show that the GNR gaps can be tailored by applying different sulfur configurations from cyclodehydrogenated isomers via debromination and intramolecular cyclodehydrogenation. This feature should enable a new approach for the creation of multiple GNR heterojunctions by engineering their sulfur configurations. These predictions have been confirmed via scanning tunneling microscopy and scanning tunneling spectroscopy. For example, we have found that the S-containing GNRs contain segments with distinct band gaps, i.e., a sequence of multiple heterojunctions that results in a sequence of quantum dots. This unusual intraribbon heterojunction sequence may be useful in nanoscale optoelectronic applications that use quantum dots.

36 MATERIALS SCIENCE↗
DOE OSTI2017

High-performance multilayer WSe 2 field-effect transistors with carrier type control

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

A mini review on two-dimensional nanomaterial assembly

Two-dimensional (2D) nanomaterials have attracted a great deal of attention since the discovery of graphene in 2004, due to their intriguing physicochemical properties and wide-ranging applications in catalysis, energy-related devices, electronics and optoelectronics. To maximize the potential of 2D nanomaterials for their technological applications, controlled assembly of 2D nanobulding blocks into integrated systems is critically needed. This mini review summarizes the reported strategies of 2D materials-based assembly into integrated functional nanostructures, from in-situ assembly method to post-synthesis assembly. Here, the applications of 2D assembled integrated structures are also covered, especially in the areas of energy, electronics and sensing, and we conclude with discussion on the remaining challenges and potential directions in this emerging field.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Lead halide perovskite nanowires stabilized by block copolymers for Langmuir-Blodgett assembly

The rapid development of solar cells based on lead halide perovskites (LHPs) has prompted very active research activities in other closely-related fields. Colloidal nanostructures of such materials display superior optoelectronic properties. Especially, one-dimensional (1D) LHPs nanowires show anisotropic optical properties when they are highly oriented. However, the ionic nature makes them very sensitive to external environment, limiting their large scale practical applications. Here, we introduce an amphiphilic block copolymer, polystyrene-block-poly(4-vinylpyridine) (PS-P4VP), to chemically modify the surface of colloidal CsPbBr 3 nanowires. Finally, the resulting core-shell nanowires show enhanced photoluminescent emission and good colloidal stability against water. Taking advantage of the stability enhancement, we further applied a modified Langmuir-Blodgett technique to assemble monolayers of highly aligned nanowires, and studied their anisotropic optical properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗