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Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors
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High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
In this work, p-channel 4H-SiC MOSFETs were fabricated and analyzed at high temperature. It is demonstrated that nitridation of the gate oxide enables enhancement mode operation in these devices. Nitrogen incorporation at the 4H-SiC/SiO2 interface by nitric oxide annealing reduces the interface trap density energetically located in the lower half of the 4H-SiC bandgap, resulting in viable high temperature p-channel devices. In the 27–300 °C temperature range, the threshold voltage decreases with increasing temperature, consistent with the reduction of occupied interface traps at higher temperatures. The hole channel mobility is weakly temperature dependent under strong inversion conditions. Hall measurements support that above the threshold voltage, the mobility is limited by surface roughness scattering. In weaker inversion, the channel conductivity is limited by interface hole trapping and Coulomb scattering. In addition, high temperature bias stress measurements confirm a temperature activated hole trapping under negative gate bias, which requires further investigations.
Uncovering edge states and electrical inhomogeneity in MoS 2 field-effect transistors
The performances of devices based on transition metal dichalcogenides (TMDs) are far from their intrinsic limits, presumably due to various disorders in these 2D crystals. To date, little is known about the magnitude and characteristic length scale of electrical inhomogeneity induced by the disorders in TMDs. In this paper, strong mesoscopic (submicrometer) electrical inhomogeneity in MoS 2 flakes, which reveals the potential fluctuations, was observed by a unique technique termed microwave impedance microscopy. The local conductance of edge states and its contribution to the transport were also resolved and analyzed experimentally for the first time, to our knowledge. Furthermore, the results provide a comprehensive understanding of the potential landscape in TMDs, which is very important for the improvement of device performance.
Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors
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Device Isolation in Hybrid Field-Effect Transistors by Semiconductor Micropatterning Using Picosecond Lasers
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MgTe (110) semiconductor for a magnetic-element-free nonballistic spin-field-effect transistor
Not provided.
First-principles simulations of a graphene-based field-effect transistor
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Active Hot Spot Cooling of GaN Transistors With Electric Field Enhanced Jumping Droplet Condensation.
Abstract not provided.