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At least 1,603 records · Page 89

Photovoltaic Systems for Lunar Surface Survivability During the Lunar Day and Night

While photovoltaic systems will not be operating during the lunar night, it is still important to ensure that the cells, structure, and other components are able to survive the extreme low temperature conditions during times of low to no illumination. The Photovoltaics team at NASA GRC has expertise in low temperature solar cell operation, thermal cycling of solar cell coupons and array components, and the design of lunar solar arrays for long duration surface missions.

Solar power↗

Universal Scaling Laws for Solar and Stellar Atmospheric Heating: Catalog of Power-law Index between Solar Activity Proxies and Various Spectral Irradiances

The formation of extremely hot outer atmospheres is one of the most prominent manifestations of magnetic activity common to late-type dwarf stars, including the Sun. It is widely believed that these atmospheric layers, the corona, transition region, and chromosphere, are heated by the dissipation of energy transported upwards from the stellar surface by the magnetic field. This is signified by the spectral line fluxes at various wavelengths, scaled with power-law relationships against the surface magnetic flux over a wide range of formation temperatures, which are universal to the Sun and Sunlike stars of different ages and activity levels. This study describes a catalog of power-law indices between solar activity proxies and various spectral line fluxes. Compared to previous studies, we expanded the number of proxies, which now includes the total magnetic flux, total sunspot number, total sunspot area, and the F10.7 cm radio flux, and further enhanced the number of spectral lines by a factor of 2. This provides the data to study in detail the flux–flux scaling laws from the regions specified by the temperatures of the corona (log(T/K) = 6–7) to those of the chromosphere (log(T/K) ∼ 4), as well as the reconstruction of various spectral line fluxes of the Sun in the past, F-, G-, and K-type dwarfs, and the modeled stars.

Stellar coronae↗

SDSS IV MaNGA - star-formation driven biconical outflows in face-on galaxies

ABSTRACT We find 132 face-on and low inclination galaxies with central star formation driven biconical gas outflows (FSFB) in the SDSS MaNGA (Mapping Nearby Galaxies at APO) survey. The FSFB galaxies show either double peaked or broadened emission line profiles at their centres. The peak and maximum outflow velocities are 58 and 212 km s−1, respectively. The gas velocity dispersion reveals a mild dependence on the central star formation surface density compatible with models of gas dispersion powered by the Jeans instability in gas clumps or by gas turbulence dissipation. We estimate the gas outflow rate and conclude that the central gas depletion time does not depend on galactic mass. In turn, the ratio of the gas outflow rate to the gas consumption rate by the star formation is low in massive galaxies and high in low mass objects, while the star formation is a more rapid process of the gas consumption. We compare properties of the FSFB galaxies with a control sample of 375 comparison galaxies and find that the FSFB objects have high central concentration of star formation and also younger central stellar population with respect to their periphery. We analysed the environment of the galaxies and identified nearby satellites and elements of low surface brightness structure. We see that many tidal-enhanced features that can be assigned to early and intermediate stages of galactic interaction are much more frequent in the FSFB galaxies with respect to the comparison sample. We conclude that the gas should be replenished via the accretion from small satellites.

Bizyaev, D. (ORCID:000000023601133X)↗

Capillary-driven Condensation for Heat Transfer Enhancement in Steam Power Plants

A novel condensation method was developed to enhance the efficiency of steam power plants. The method consists of a hierarchical structure on the surface of condenser tubes consisting of a wicking structure overlaid with a porous hydrophobic membrane. The project is divided into two main efforts. First, a structure with highly defined geometry was made utilizing microfabrication on silicon. This structure helped us elucidate the physics of steam condensation at the surface, more easily model the heat transfer coefficient, and demonstrate the first proof-of-concept for our proposed condensation approach. The structures on silicon achieved a heat transfer coefficient ~ 240% higher than the theoretical filmwise value at the same operating condition. Second, the method is explored for scalability by fabricating surfaces with industrial class materials followed by heat transfer measurements on flat surfaces. An HTC enhancement of 50% over the experimental filmwise value was achieved on hierarchical copper surfaces made of commercially available copper foams and meshes, showing the potential of achieving heat transfer enhancement using low cost and scalable materials. Scalable fabrication of the hydrophobic membrane and the porous copper wick were also investigated. Our heat and mass transfer model predicts a > 5x heat transfer enhancement on a scalable version of capillary driven condenser made of membrane covered porous copper. The results demonstrate the promise of capillary-driven condensation surfaces for heat transfer applications.

20 FOSSIL-FUELED POWER PLANTS↗

Optical Design of Segmented Hexagon Array Solar Mirror

A segmented array of mirrors was designed for a solar concentrator test stand at MSFC for firing solar thermal propulsion engines. The 144 mirrors each have a spherical surface to approximate a parabolic concentrator when combined into the entire 18-foot diameter array. The mirror segments are aluminum hexagons that had the surface diamond turned and quartz coated. The array focuses sunlight reflected from a heliostat to a 4 inch diameter spot containing 10 kw of power at the 15-foot focal point. The derivation of the surface figure for the respective mirror elements is shown. The alignment process of the array is discussed and test results of the system's performance is given.

Huegele, Vince↗

Design and Performance of Micro-Spec, an Ultra Compact High-Sensitivity Far-Infrared Spectrometer for SPICA

Micro-Spec (u-Spec) is a high-performance spectrometer working in the 250-700-micrometer wavelength range, whose modules use low-loss superconducting microstrip transmission lines on a single 4-inch-diameter silicon wafer. Creating the required phase delays in transmission lines rather than free space allows such an instrument to have, in principle, the performance of a meter-scale grating spectrometer. Such a dramatic size reduction enables classes of instruments for space that would be impossible with conventional technologies. This technology can dramatically enhance the long-wavelength capability of the space infrared telescope for cosmology and astrophysics SPICA. u-Spec is analogous to a grating spectrometer. The phase retardation generated by the reflection from the grating grooves is instead produced by propagation through a transmission line. The power received by a broadband antenna is progressively divided by binary microstrip power dividers, and the required phase delays are generated by different lengths of microstrip transmission lines. by arranging these outputs along a circular focal surface, the analog of a Rowland spectrometer can he created. The procedure to optimize the Micro-Spec design is based on the stigmatization and minimization of the light path function in a two-dimensional hounded region, which results in an optimized geometry arrangement with three stigmatic points. In addition, in order to optimize the overall efficiency of the instrument, the emitters are directed to the center of the focal surface. The electric field amplitude and phase as well as the power transmitted and absorbed throughout the region are analyzed. Measurements are planned in late summer to validate the designs.

Cataldo, Giuseppe↗

Studies in electron phenomena in MOS structures: The pulsed C-V method

The pulse hysteresis capacitance voltage (C-V) provides a straight forward technique for measuring the change of various charges in MOS structures and a tool for investigating the kinetics of various electron phenomena is developed and described. The method can be used for measuring the energy distribution and kinetics of surface states with the resolution of about 1/5 x 10 to the -9 power cm eV. Some transients in an MOS structure, particularly, the thermal generation of minority charge carriers via surface states and the relaxation of minority charge carriers supplied from the inversion layer outside the MOS structure are theoretically investigated. Analytical expressions which clearly present the physics of those electron phenomena are derived.

Kaplan, G.↗

Electrical characterization of a Mapham inverter using pulse testing techniques

Electric power requirements for aerospace missions have reached megawatt power levels. Within the next few decades, it is anticipated that a manned lunar base, interplanetary travel, and surface exploration of the Martian surface will become reality. Several research and development projects aimed at demonstrating megawatt power level converters for space applications are currently underway at the NASA Lewis Research Center. Innovative testing techniques will be required to evaluate the components and converters, when developed, at their rated power in the absence of costly power sources, loads, and cooling systems. Facilities capable of testing these components and systems at full power are available, but their use may be cost prohibitive. The use of a multiple pulse testing technique is proposed to determine the electrical characteristics of large megawatt level power systems. Characterization of a Mapham inverter is made using the proposed technique and conclusions are drawn concerning its suitability as an experimental tool to evaluate megawatt level power systems.

Baumann, E. D.↗

Venus topography and kilometer-scale slopes

During the first 8 months of the Magellan mission, the radar altimeter has made some three million measurements of the surface of Venus covering the latitude range from 85 deg N to 80 deg S. Methods involving range correlation, Doppler filtering, multiburst summation, and range migration are used to focus the observations and to achieve high surface resolution. Results are presented as maps of the global distribution of topography, meter-scale roughness, and power reflection coefficient. The results are similar to those reported in previous experiments (surface heights exhibit a unimodal distribution with more than 80 percent of the surface lying within 1 km of the 6051.84-km mean radius) but the higher resolution of the Magellan altimeter has disclosed several surprisingly steep features, e.g., the southwest face of the Maxwell Montes, the southern face of the Danu Montes, and the chasmata to the east of Thetis Regio, where average kilometer-scale slopes of greater than 30 deg are not uncommon. This conclusion is corroborated by close inspection of synthetic aperture radar imagery.

Ford, Peter G.↗

Radar observations of asteroid 1986 JK

The asteroid 1986 JK was observed with a 3.5 cm-wavelength radar in May and June, 1986, at less than 0.029 AU; its radar echo power circular polarization ratio indicates single backscattering from smooth surface elements. A working model constructed for the asteroid in light of these radar data postulates a 1-2 km object whose shape has little elongation and some polar flattening. Orbital and physical characteristics are rather cometlike. The radar astrometric data obtained are noted to be extremely powerful for orbit-improvement, so that a search ephemeris whose uncertainty is an order-of-magnitude smaller than that based on relevant optical data alone can be prepared by combining optical and radar data.

Ostro, S. J.↗

Non-contact based measurement of thin film coatings using eddy current measurements

When a time varying magnetic field attempts to penetrate a conductive surface, the surface will respond to that time varying field by the generation of circular currents around the flux lines. This effect is described by Faraday’s law of induction. An eddy current based measurement system attempts to discern the power loss incurred by these circulating currents within the conductive surface. The measurement system described here uses an Agilent E 4980A LCR meter to quantify the reaction of the film to the high frequency magnetic field lines which are forced into the film. The measurement metric is the meter’s interpretation of the power dissipation caused by the measured film. The meter is setup to use the Ls/Rs inductor model, and is run at 1 Mhz to bring the losses within the film as high as possible for sensitivity.

43 PARTICLE ACCELERATORS↗

In Situ Characterization of Surface Recombination in p-Si/SiO x Based Photoelectrochemical Cells

Time-resolved infrared (TRIR) and electrochemical impedance spectroscopy (EIS) were utilized to quantify surface states present at silicon oxide (SiO x ) protected crystalline p-Si electrolyte interfaces. The primary goal was to identify p-Si/SiO x photoelectrodes with both low surface recombination rates and efficient multi-electron transfer to an acceptor present in the external electrolyte. Three SiO x layers were investigated: native oxide (nOx), chemical oxide (cOx), and rapid thermal annealed (RTA) thermal oxide (tOx). Comparative study with [Ru(bpy) 3 ](PF 6 ) 2 as the electron acceptor indicated that tOx was most optimal with a small effective recombination rate, multi-electron transfer capability, and photovoltage of 500 ± 50 mV. A secondary goal was to analyze the surface recombination rates with the Shockley–Read–Hall (SRH) kinetic model. Two surface states were identified from this analysis, one closer to the CB edge (V t,1 ) and the other near the midgap (V t,2 ). EIS and SRH analyses revealed that a forming gas (5% H 2 /N 2 ) anneal (FGA) decreased surface recombination for tOx and nOx through a lower density of surface states. In the case of tOx, the infrared data indicated that V t,2 was completely removed. Here, the energetic positions of the band edges were correlated with the surface state density; low densities corresponded to more favorable potentials for inversion layer formation, which is expected to be most optimal for photocatalysis. Collectively this study indicates that the free carrier dynamics provided by TRIR represent a powerful in situ probe of the band edge and the surface state energetics in silicon based photoelectrochemical cells.

Electrochemical Impedance Spectroscopy↗

Computation of photovoltaic parameters under lunar temperature variation

Photovoltaic (PV) arrays with regenerative-fuel-cell energy storage is a prime, power-system candidate for lunar photo-power. The PV module performance decreases at higher temperatures. Surface temperature variations of the moon are extreme, the maximum (noon) temperature being 384 K. The present work utilizes detailed computations of photovoltaic parameters with computer program developed earlier for the computation of optimum bandgaps of single- and two-junction solar cells at different temperatures, and calculates the power output of single and two-junction solar modules under different configurations which constitutes an improvement over the assumption of a linear variation of efficiency with temperature. The program also calculates the necessary PV-array size to satisfy stipulated levels of day- and night-time power consumption.

Dhere, Neelkanth G.↗

Chromium Tolerant, Highly Active and Stable Electrocatalytic Internal Surface Coating for Cathode of Commercial SOFCs (Final Report)

This project is aimed to develop a chromium (Cr) tolerant, highly active, and stable coating layer on the internal surfaces of the porous composite cathode from commercially available SOFCs. Such coating layer was developed using the additive manufacturing process of Atomic Layer Deposition (ALD) and has been applied on the cathode consisting of either an electronic conductor of LaxSr 1-x MnyO 3-δ (LSM) or mixed ionic and electronic conducting La x Sr 1-x Co y Fe 1-y O 3-δ (LSCF). PI's work has demonstrated that the internal surface of cathode from the commercial cells, can be further tailored using ALD coating to dramatically enhance the cell performance. For instance, ALD layer consisting heterostructured nano composite of nano-Pt and nano-(Mn 0.8 Co 0.2 ) 3 O 4 oxide on the internal surface of porous LSM/YSZ cathode from SOFCs, has resulted in the large reduction of the cell polarizations resistance by up to 53%, and enormous increase of power density over 370%. For the cells with LSCF/Sm 2 O 3 doped CeO 2 (SDC) cathode, the conformal layer of nano-composite consisting of superjacent CoOx and subjacent minimum amount of Pt nano-grains has resulted in the power density enhancement by 126% for the large scale industry tubular cells at 750°C, and both the performance enhancement and nanostructure of the ALD layer are stable over ~ 2000 h continuous operation performed at industry test station. In the meanwhile, those ALD coating layer developed by PI's work is also inherently Cr-tolerant, and could act as physical barrier for preventing Cr diffusion into the cathode backbone, so as to mitigate the Cr poisoning effect on the cathode. In this project, the impact of Cr on the performance of those ALD coated commercial cells has been evaluated. Based on evolution of the cell performance, the ALD coating layer chemistry and ALD coating layer thickness has been optimized to maximize the overall Cr tolerance, cell power density and cell longevity. Different ALD coating has been applied onto the internal surface of LSM/YSZ and LSCF/SDC backbone respectively. The architecture/scaffold structures on the internal surface of different cathode, designed by this project, was catalogued and analyzed using High Resolution Transmission Electron Microscopy (HRTEM), and cell power/durability performance are assured via comprehensive electrochemical performance testing in the industry operation relevant conditions. The impact of the electrochemical operation current density, the water humidity, the cell operation temperature, and cell operation duration on the Cr tolerance of ALD coated cells has been systematically investigated. There is completely different nanostructure degradation mechanisms between LSM and LSCF cells induced by Cr contamination. For the LSCF/SDC baseline cell, With the Cr source, there is no apparent Sr surface segregation phase even for the baseline cell operated for 3000 h at 750 °C. With the Cr source, there is significant amorphous (SrCr)Ox phase accumulated in the original pore region. For the commercial baseline cells, Cr contaminants on the LSM electrode severely impacted the entire cell's electrochemical performance and nanostructure degradation. Those degradations include (1). Peak power density loss of 64 % after 109 h of operation. The dramatic increase in Rp (2). They are cracking at LSM/SSZ interface, LSM grains. SSZ remains intact but with (CrMn)Ox. By contrast, ALD coating (MnCo)Ox/Pt dramatically improves the Cr resistance, as follows (1). ALD-coated cell with a power density is 280-380 % of the baseline cell, depending on the ALD layer thickness. (2). For a cell with a 20 nm thick ALD layer, there is a large performance enhancement (> 200 % power density) induced by ALD coating of Cr-tolerant Mn 0.8 Co 0.2 Ox. (3). For a cell with a 20 nm thick ALD layer, after 168 h at 750 °C power density of the ALD-coated cell is ~ 600% of that baseline cell upon operation with Cr contamination for 109 h. The ALD coating on the internal surface of cathode developed by this project integrated multi-functions. Those multi-functions include (1). Dramatically improving the cell power density for the commercial cells; (2). Dramatically improving contamination resistance of the cathode, for being an excellent protection coating layer sealing off Cr contamination. (3). Dramatically increasing the cell longevity by potentially preventing the microstructure evolution and grain coarsening of the cathode. Overall, this project will provide a simple solution to simultaneously enhance power density and increase the reliability, robustness, and endurance of commercial SOFCs, over the entire operating temperature range of 650-800 °C. For the inherently functional SOFC, the ALD coating of LSM based cathode mitigate the Cr-contamination. Power density of ALD-coated cell is ~ 600% of that baseline cell upon operation with Cr contamination. In addition to SOFCs, the novel on-demand design approach and creation of multifunctional heterogeneous architecture on the electrode surface presented in this work opens further research for their application in other types of fuel cells, batteries, and sensors for which electrochemical reactions on the surface are similarly critical.

36 MATERIALS SCIENCE↗

Microwave power transmitting phased array antenna research project

An initial design study and the development results of an S band RF power transmitting phased array antenna experiment system are presented. The array was to be designed, constructed and instrumented to permit wireless power transmission technology evaluation measurements. The planned measurements were to provide data relative to the achievable performance in the state of the art of flexible surface, retrodirective arrays, as a step in technically evaluating the satellite power system concept for importing to earth, via microwave beams, the nearly continuous solar power available in geosynchronous orbit. Details of the microwave power transmitting phased array design, instrumentation approaches, system block diagrams, and measured component and breadboard characteristics achieved are presented.

Dickinson, R. M.↗

Comparison of analysis and experiment for gearbox noise

Low contact ratio spur gears were tested in the NASA gear-noise rig to study the noise radiated from the top of the gearbox. Experimental results were compared with a NASA acoustics code to validate the code for predicting transmission noise. The analytical code is based on the boundary element method (BEM) which models the gearbox top as a plate in an infinite baffle. Narrow band vibration spectra measured at 63 nodes on the gearbox top were used to produce input data for the BEM model. The BEM code predicted the total sound power based on the measured vibration. The measured sound power was obtained from an acoustic intensity scan taken near the surface of the gearbox at the same 63 nodes used for vibration measurement. Analytical and experimental results were compared at four different speeds for sound power at each of the narrow band frequencies over the range of 400 to 3200 Hz. Results are also compared for the sound power level at meshing frequency plus three sideband pairs and at selected gearbox resonant frequencies. The difference between predicted and measure sound power is typically less than 3 dB with the predicted value generally less than the measured value.

Oswald, Fred B.↗

Simulations of the churning mode: Toroidally symmetric plasma convection and turbulence around the X-points in a snowflake divertor

Using a reduced MHD model, extended to include field-aligned thermal conduction, we present numerical simulations of the churning mode (CM): a toroidally symmetric, non-linear plasma vortex in the vicinity of the null points in a snowflake (SF) divertor [D. D. Ryutov et al., Phys. Scr. 89, 088002 (2014)]. Simulations are carried out across a range of inter-null separations, d xx ⁠, and inter-null orientations, θ⁠, primarily in conditions relevant to the MAST-U tokamak. We find that, when d xx is small, the CM induces additional transport across the X-points when β pm ≳8%, where β pm is the ratio of the plasma pressure in the null region to poloidal magnetic pressure at the midplane. This transport also increases approximately linearly as d xx is reduced. A diffusive model of this transport is shown to predict the total transport across the null points, where diffusion coefficients of up to ∼ 10 2 m 2 s −1 centered on a small region around the X-points are used. However, the CM also results in significant changes to the flux surfaces in the null region, which is not captured by this diffusive model. The changes in magnetic geometry mean the fractional exhaust power delivered to each divertor leg is highly sensitive to β pm ⁠, d xx ⁠, and θ⁠. For small values of θ⁠, the CM can induce a change in topology, redirecting exhaust power from a secondary divertor leg on the high field side to one on the low field side. Similar behavior is found in the fraction of exhaust power going to the inner and outer divertor. Such changes in the flux surfaces may not be captured by Grad–Shafranov solvers and so may be a source of error in the magnetic reconstruction of SF experiments. We consistently find that the fractional exhaust power going to a secondary divertor leg on the high field side is small, consistent with SF experiments.

Computer simulation↗

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗