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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy

The change in the dislocation density on the surface of GaN epitaxial layers, which were grown by hydride vapor-phase epitaxy on sapphire substrates with c and r orientations, has been investigated by optical and atomic force microscopy (AFM). It is shown that the observed decrease in the density of threading dislocations with an increase in the layer thickness is related to the annihilation of mixed dislocations. The experimental and theoretical data on the change in the density of mixed dislocations with an increase in the epitaxial-layer thickness are in good correspondence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Investigation into the correlation factor of substrate and multilayer film surfaces by atomic force microscopy

A method for studying the correlations between substrate and film-coating profiles by atomic force microscopy, which makes it possible to calculate the correlation factor (a function of spatial frequency), has been developed. The spatial-frequency range in which the correlation factor can be reliably calculated is established. The method proposed is used to calculate the dependence of the correlation factor on spatial frequency for multilayer interference mirror elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Study of structural order in porphyrin-fullerene dyad ZnDHD6ee monolayers by electron diffraction and atomic force microscopy

The structure of porphyrin-fullerene dyad ZnDHD6ee monolayers formed on the surface of aqueous subphase in a Langmuir trough and transferred onto solid substrates has been studied. The data obtained are interpreted using simulation of the structure of isolated molecules and their packing in monolayer and modeling of diffraction patterns from molecular aggregates having different sizes and degrees of order. Experiments on the formation of condensed ZnDHD6ee monolayers are described. The structure of these monolayers on a water surface is analyzed using {pi}-A isotherms. The structure of the monolayers transferred onto solid substrates is investigated by electron diffraction and atomic force microscopy. The unit-cell parameters of two-dimensional domains, which are characteristic of molecular packing in monolayers and deposited films, are determined. Domains are found to be organized into a texture (the molecular axes are oriented by the [001] direction perpendicular to the substrate). The monolayers contain a limited number of small 3D domains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electron microscopy of iron chalcogenide FeTe(Se) films

The structure of Fe{sub 1+δ}Te{sub 1−x}Se{sub x} films (x = 0; 0.05) grown on single-crystal MgO and LaAlO{sub 3} substrates has been investigated by transmission and scanning transmission electron microscopy. The study of Fe{sub 1.11}Te/MgO structures has revealed two crystallographic orientation relationships between the film and substrate. It is shown that the lattice mismatch between the film and substrate is compensated for by the formation of misfit dislocations. The Burgers vector projection is determined. The stresses in the film can partially be compensated for due to the formation of an intermediate disordered layer. It is shown that a FeTe{sub 0.5}Se{sub 0.5} film grown on a LaAlO{sub 3} substrate is single-crystal and that the FeTe{sub 0.5}Se{sub 0.5}/LaAlO{sub 3} interface in a selected region is coherent. The orientation relationships between the film and substrate are also determined for this case.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electron microscopy study of the microstructure of Ni–W substrate surface

The surface microstructure of Ni–W alloy tapes, which are used as substrates to form films of high-temperature superconductors and photovoltaic devices, has been studied. Several samples of a Ni{sub 95}W{sub 5} tape (Evico) annealed under different conditions were analyzed using scanning electron microscopy, energy-dispersive X-ray microanalysis, electron diffraction, and electron energy-loss spectroscopy. NiWO{sub 4} precipitates are found on the surface of annealed samples. The growth of precipitates at a temperature of 950°C is accompanied by the formation of pores on the surface or under an oxide film. Depressions with a wedge-shaped profile are found at the grain boundaries. Annealing in a reducing atmosphere using a specially prepared chamber allows one to form a surface free of nickel tungstate precipitates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Electron microscopy study of an Old Russian (XII century) encolpion cross with black inlay

The phase compositions of the basic material (alloy) of a pre-Mongolian Old Russian encolpion cross found near Suzdal and its black inlay have been investigated by methods of scanning and transmission electron microscopy and energy-dispersive X-ray microanalysis. The cross material is lead–zinc–tin α-bronze, and the black is copper sulfide with lead inclusions. As a result of the corrosion, tin and copper oxides and zinc sulfides, which made the cross dark gray, were formed on its surface. It is shown that the corrosion depth is as large as 50 μm; thus, laps must be prepared to accurately determine the morphology and phase composition of the corrosion layer. Decoration with black was apparently performed by pouring with copper sulfide melt or melting a powder preliminarily placed in grooves forming an image on the surface.

36 MATERIALS SCIENCE↗
DOE OSTI2017

New method of automated statistical analysis of polymer-stabilized metal nanoparticles in electron microscopy images

The efficiency of the synthesis and application of metal/nonmetal particles several nanometers in size, prepared in solutions and stabilized with polymers, can be increased by applying a reliable statistical analysis and determining particle-size distributions for different systems. A new method for processing electron microscopy images of nanoparticles ≤10 nm in size and the program Analyzer of Nanoparticles designed for rapid recognition and measurements are presented. The program combines two approaches: threshold image processing for particle recognition and fitting the model of the particles with neighborhood background to the real experimental images.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Study of magnetic metal periodic structures by X-Ray and electron microscopy methods

Complex studies of magnetic periodic metallic systems based on Dy/Gd layers have been carried out by X-ray diffraction, resonance X-ray reflectometry, transmission electronic microscopy, and energydispersve microanalysis. The application of these methods and joint analysis of their results provide an effective approach to study of the structure and determination of the parameters of individual layers and interfaces and their structural quality with a high degree of reliability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Nanohematite from Ferruginous Quartzites of Kursk Magnetic Anomaly According to Transmission Electron Microscopy Data

Transmission electron microscopy study of ferruginous quartzite (jaspilites) from the Lebedinsky field of Kursk magnetic anomaly has revealed for the first time hematite nanoformations (about 10 nm in size), sp. gr. R3̅, which coexist with hematite, sp. gr. R3̅c, in the same crystallographic orientation or manifest themselves as individual nanoinclusions in the substrate of poorly crystallized magnetite. On the assumption that, in correspondence with the energy-dispersive X-ray analysis data, octahedral sites in the hematite structure can be occupied by only Fe cations, several structural models are proposed explain the hematite symmetry lowering to R3̅.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Study of the Ancient Crimean Ceramics by Electron Microscopy Methods

Fragments of ancient amphorae and tiles dated to the IVth to IInd centuries BC, which were found on the Crimean peninsula, have been investigated by methods of scanning and transmission/scanning electron microscopy, combined with energy-dispersive X-ray microanalysis. The revealed differences in the compositions of the clay core and inclusions (leaners) are associated with the differences in the periods of time when items were made and the sites of their origin.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Low-Voltage Scanning Electron Microscopy and Energy-Dispersive X-Ray Microanalysis of the Interface of Multilayer Polymer Composite

The morphology of the layer of polyelectrolyte complex, which is formed in the composite based on chitosan and sulfoethyl cellulose during the contact of a solution of one of them with a gel film of the other one, has been investigated by the low-voltage (≤3 kV) scanning electron microscopy. A technique for eliminating the effects related to charge accumulation on the dielectric film surface is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Phase states of water near the surface of a polymer membrane. Phase microscopy and luminescence spectroscopy experiments

Phase microscopy is used to show that the refractive index in the near-surface layer of water at the surface of a polymer Nafion membrane increases by a factor of 1.1 as compared to bulk water. Moreover, this layer exhibits birefringence. Experiments on UV irradiation of dry (anhydrous) and water-soaked Nafion are performed in grazing-incidence geometry to study their stimulated luminescence spectra. These spectra are found to be identical in both cases. For dry Nafion, luminescence can only be excited if probing radiation illuminates the polymer surface. The luminescence of water-soaked Nafion can also be excited if the distance between the optical axis and the surface is several hundred micrometers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2010

Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi{sub 1-x}/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH{sub 4} ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the Ge{sub x}Si{sub 1-x} alloy and of the elastic strain {epsilon} (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and {epsilon} on the islands' growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

The local density of states in self-assembled GeSi/Si(001) nanoislands is investigated for the first time by combined tunneling and atomic-force scanning microscopy. Current images and tunneling spectra of individual GeSi/Si(001) islands are obtained. These measurements yield the spatial and energy distributions of the local density of states in GeSi islands, respectively. The tunneling spectroscopy data demonstrate that uncapped Ge{sub 0.3}Si{sub 0.7}/Si(001) islands behave as type-I heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Electron microscopy of GaAs Structures with InAs and as quantum dots

An electron-microscopy study of GaAs structures, grown by molecular-beam epitaxy, containing two coupled layers of InAs semiconductor quantum dots (QDs) overgrown with a thin buffer GaAs layer and a layer of low-temperature-grown gallium arsenide has been performed. In subsequent annealing, an array of As nanoinclusions (metallic QDs) was formed in the low-temperature-grown GaAs layer. The variation in the microstructure of the samples during temperature and annealing conditions was examined. It was found that, at comparatively low annealing temperatures (400-500 Degree-Sign C), the formation of the As metallic QDs array weakly depends on whether InAs semiconductor QDs are present in the preceding layers or not. In this case, the As metallic QDs have a characteristic size of about 2-3 nm upon annealing at 400 Degree-Sign C and 4-5 nm upon annealing at 500 Degree-Sign C for 15 min. Annealing at 600 Degree-Sign C for 15 min in the growth setup leads to a coarsening of the As metallic QDs to 8-9 nm and to the formation of groups of such QDs in the area of the low-temperature-grown GaAs which is directly adjacent to the buffer layer separating the InAs semiconductor QDs. A more prolonged annealing at an elevated temperature (760 Degree-Sign C) in an atmosphere of hydrogen causes a further increase in the As metallic QDs' size to 20-25 nm and their spatial displacement into the region between the coupled InAs semiconductor QDs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Atomic-force microscopy and photoluminescence of nanostructured CdTe

Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180 Degree-Sign C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400-760 Degree-Sign C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600 Degree-Sign C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.

36 MATERIALS SCIENCE↗