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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

EPR and optical absorption study of Cu{sup 2+} doped lithium sulphate monohydrate (LSMH) single crystals

EPR study of Cu{sup 2+} doped NLO active Lithium Sulphate monohydrate (Li{sub 2}SO{sub 4.}H{sub 2}O) single crystals were grown successfully by slow evaporation method at room temperature. The principal values of g and A tensors indicate existence of orthorhombic symmetry around the Cu{sup 2+} ion. From the direction cosines of g and A tensors, the locations of Cu{sup 2+} in the lattice have been identified as interstitial site. Optical absorption confirms the rhombic symmetry and ground state wave function of the Cu{sup 2+} ion in a lattice as d{sub x2-y2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Comparison of structural and magnetic properties of Zn{sub x}Mg{sub 1.5-x}Mn{sub 0.5}FeO{sub 4} and MgAl{sub x}Cr{sub x}Fe{sub 2-2x}O{sub 4} spinel oxides

The spinel oxides Zn{sub x}Mg{sub 1.5-x}Mn{sub 0.5}FeO{sub 4} (x = 0.0 to 0.6) and MgAl{sub x}Cr{sub x}Fe{sub 2-2x}O{sub 4} (x = 0.0 to 0.6) abbreviated as ZMMFO and MACFO respectively, were synthesized by standard ceramic processing. The compositional purity of all the specimens was checked by EDAX technique. The X-ray diffractometry was employed to determine the lattice constants and distribution of cations in the interstitial voids. The initial decrease of cell edge parameter (a) for ZMMFO up to x = 0.2 and thereafter expected rise in the ‘a’ and the initial slower rate of reduction in the lattice constant for MACFO are explained as basic of cation occupancy. The magnetic ordering in both systems is explained by invoking statistical canting models. The compositional variation of magneton number (n{sub B}) for ZMMFO could be very well explained by Localized canting of spin (LCS) model while Random canting of spin (RCS) model was used for MACFO system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Formation and annihilation of E4 centers in ZnO: Influence of hydrogen

Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to fluences in the range of 8 × 10{sup 10} to 8 × 10{sup 11 }cm{sup −2}. The implantations were performed at the temperature of 285 K, and the samples were then analyzed in-situ by deep level transient spectroscopy (DLTS) using a setup connected to the implanter beam line. The concentration of the so-called E4 center, having an apparent energy level at ∼0.57 eV below the conduction edge, is found to increase linearly with the ion fluence and the generation rate is proportional to the elastic energy deposition, as expected for a primary defect. Isothermal annealing of the E4 center at temperatures between 290 and 315 K reveals first-order kinetics with the activation energy of ∼0.6 eV. The annealing rate is strongly enhanced with increasing hydrogen fluence, and a model invoking migration of interstitial hydrogen and subsequent reaction with E4 exhibits close agreement with the experimental data. The rate of electron capture by E4 during the DLTS filling pulse depends on temperature, and it displays a thermal barrier of ∼0.15 eV. Most of these experimental results for E4 conform to the theoretically predicted properties of the oxygen vacancy (V{sub O}) and a tentative assignment of E4 to V{sub O} is made, corroborating previous suggestions in the literature. In particular, the 0.57 eV level is ascribed to the double donor state of V{sub O}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mössbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a lesser degree. Investigated defects include interstitial and substitutional iron, iron-boron pairs, iron-vacancy, and iron-divacancy. We find that, in general, agreement between the calculations and Mössbauer data is within a 10% error bar. Nonetheless, we show that the methodology can be used to make accurate assignments, including to separate peaks of similar defects in slightly different environments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Lattice modification in KTiOPO{sub 4} by hydrogen and helium sequentially implantation in submicrometer depth

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO{sub 4}). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 10{sup 16 }cm{sup −2}, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO{sub 4} crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO{sub 4} surface from blistering.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Preferential site occupancy of alloying elements in TiAl-based phases

First principles calculations are used to study the preferential occupation of ternary alloying additions into the binary Ti-Al phases, namely, γ-TiAl, α{sub 2}-Ti{sub 3}Al, β{sub o}-TiAl, and B19-TiAl. While the early transition metals (TMs, group IVB, VB, and VIB elements) prefer to substitute for Ti atoms in the γ-, α{sub 2}-, and B19-phases, they preferentially occupy Al sites in the β{sub o}-TiAl. Si is, in this context, an anomaly, as it prefers to sit on the Al sublattice for all four phases. B and C are shown to prefer octahedral Ti-rich interstitial positions instead of substitutional incorporation. The site preference energy is linked with the alloying-induced changes of energy of formation, hence alloying-related (de)stabilisation of the phases. We further show that the phase-stabilisation effect of early TMs on β{sub o}-phase has a different origin depending on their valency. Finally, an extensive comparison of our predictions with available theoretical and experimental data (which is, however, limited mostly to the γ-phase) shows a consistent picture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Isotope tracer investigation and ab-initio simulation of anisotropic hydrogen transport and possible multi-hydrogen centers in tin dioxide

Hydrogen as an impurity in single crystals of tin dioxide was investigated through diffusivity and vibrational-mode analyses performed using isotope tracers and density functional theory calculations. It was found that hydrogen diffusion along the 〈001〉 axis is very fast, even at relatively low temperatures (400 °C), but is considerably slower within the (001) plane. Using transitional state calculations, this diffusion behavior was determined to be the result of anisotropy in the migration barrier for interstitial hydrogen (H{sub i}). In addition, the two distinct vibrational modes observed in the optical spectrum were identified as the O-H stretching modes of Hi and the substitutional hydrogen at the tin sites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Self-diffusion of protons in H{sub 2}O ice VII at high pressures: Anomaly around 10 GPa

The self-diffusion of ice VII in the pressure range of 5.5–17 GPa and temperature range of 400–425 K was studied using micro Raman spectroscopy and a diamond anvil cell. The diffusion was monitored by observing the distribution of isotope tracers: D{sub 2}O and H{sub 2}{sup 18}O. The diffusion coefficient of hydrogen reached a maximum value around 10 GPa. It was two orders of magnitude greater at 10 GPa than at 6 GPa. Hydrogen diffusion was much faster than oxygen diffusion, which indicates that protonic diffusion is the dominant mechanism for the diffusion of hydrogen in ice VII. This mechanism is in remarkable contrast to the self-diffusion in ice I{sub h} that is dominated by an interstitial mechanism for the whole water molecule. An anomaly around 10 GPa in ice VII indicates that the rate-determining process for the proton diffusion changes from the diffusion of ionic defects to the diffusion of rotational defects, which was suggested by proton conductivity measurements and molecular dynamics simulations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride

Time-dependent cathodoluminescence (CL) and specimen current (SC) are monitored to evaluate trapping behavior and evolution of charge storage. Examination of CL and SC suggests that the near band edge emission in GaN is reduced primarily by the activation of traps upon irradiation, and Gallium vacancies are prime candidates. At the steady state, measurement of the stored charge by empiric-analytical methods suggests that all available traps within the interaction volume have been filled, and that additional charge is being stored interstitially, necessarily beyond the interaction volume. Once established, the space charge region is responsible for the steady state CL emission and, prior to build up, it is responsible for the generation of diffusion currents. Since the non-recombination effects resulting from diffusion currents that develop early on are analogous to those leading to device failure upon aging, this study is fundamental toward a holistic insight into optical properties in GaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Photoexcited ZnO nanoparticles with controlled defects as a highly sensitive oxygen sensor

Conductance of photoexcited ZnO nanoparticles with various defects has been investigated in oxygen. ZnO nanoparticles, which show strong photoluminescence peaks originating from interstitial zinc atom (Zn{sub i}) and singly charged oxygen vacancy (V{sub O}{sup +}), show oxygen-pressure-dependent conductance changes caused by photoexcitation. Herein, a model is proposed to simulate the conductance changes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Origin of a Raman scattering peak generated in single-walled carbon nanotubes by X-ray irradiation and subsequent thermal annealing

We have found that a Raman scattering (RS) peak around 1870 cm{sup −1} was produced by the annealing of the X-ray irradiated film of single-walled carbon nanotubes (SWNTs) at 450 {sup o}C. The intensity of 1870-cm{sup −1} peak showed a maximum at the probe energy of 2.3 eV for the RS spectroscopy with various probe lasers. Both the peak position and the probe-energy dependence were almost identical to those of the one-dimensional carbon chains previously reported in multi-walled carbon nanotubes. Consequently, we concluded that the 1870-cm{sup −1} peak found in the present study is attributed to carbon chains. The formation of carbon chains by the annealing at temperature lower than 500 {sup o}C is firstly reported by the present study. The carbon chains would be formed by aggregation of the interstitial carbons, which are formed as a counterpart of carbon vacancies by X-ray irradiation diffused on SWNT walls. The result indicates that the combination of X-ray irradiation and subsequent thermal annealing is a feasible tool for generating new nanostructures in SWNT.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Oxygen defects in amorphous Al{sub 2}O{sub 3}: A hybrid functional study

The electronic properties of the oxygen vacancy and interstitial in amorphous Al{sub 2}O{sub 3} are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al{sub 2}O{sub 3}, due to structural rearrangements which assimilate the defect structure and cause a delocalization of the associated defect levels. The imbalance of oxygen leads to a nonstoichiometric compound in which the oxygen occurs in the form of O{sup 2–} ions. Intrinsic oxygen defects are found to be unable to trap excess electrons. For low Fermi energies, the formation of peroxy linkages is found to be favored leading to the capture of holes. The relative +2/0 defect levels occur at 2.5 eV from the valence band.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Evidence for room-temperature in-diffusion of nickel into silicon

Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperature as 10{sup −9} cm{sup 2}/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10{sup −15} cm{sup 2}, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Bi-enhanced N incorporation in GaAsNBi alloys

We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs 1-x-y N x Bi y alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As) As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As) As .

36 MATERIALS SCIENCE↗
DOE OSTI2017

Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa

In industrial silicon solar cells, oxygen-related defects lower device efficiencies by up to 20% (rel.). In order to mitigate these defects, a high-temperature homogenization anneal called tabula rasa (TR) that has been used in the electronics industry is now proposed for use in solar-grade wafers. This work addresses the kinetics of tabula rasa by elucidating the activation energy governing oxide precipitate dissolution, which is found to be 2.6 ± 0.5 eV. This value is consistent within uncertainty to the migration enthalpy of oxygen interstitials in silicon, implying TR to be kinetically limited by oxygen point-defect diffusion. Furthermore, this large activation energy is observed to limit oxygen precipitate dissolution during standard TR conditions, suggesting that more aggressive annealing conditions than conventionally used are required for complete bulk microdefect mitigation.

14 SOLAR ENERGY↗
DOE OSTI2017

Hybrid functional study of native point defects and impurities in ZnGeN 2

Using hybrid density functional theory, we explore the properties of native point defects and hydrogen and oxygen impurities in ZnGeN 2 , a wide-band-gap semiconductor that is promising for applications in electronic and optoelectronic devices. We find that cation antisites have the lowest formation energies amongst all of the native point defects for a wide range of chemical potential conditions. Yet, native point defects must not act as sources of doping. Unintentional n-type conductivity in ZnGeN 2 must be attributed to impurities: substitutional oxygen on a nitrogen site and interstitial hydrogen act as donors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations

Understanding the impact of impurities in solar absorbers is critical to engineering high-performance in devices, particularly over extended periods of time. Here we use hybrid functional calculations to explore the role of hydrogen interstitial (H i ) defects on the electronic properties of a number of attractive solar absorbers within the chalcopyrite and kesterite families to identify how this common impurity may influence device performance. Our results identify that H i can inhibit the highly p-type conditions desirable for several higher-band gap absorbers and that H incorporation could detrimentally affect the open-circuit voltage (V oc ) and limit device efficiencies. Moreover, we discover that H i can drive the Fermi level away from the valence band edge enough to lead to n-type conductivity in a number of chalcopyrite and kesterite absorbers, particularly those containing Ag rather than Cu. We find these results can lead to interfacial Fermi-level pinning that can qualitatively explain observed performance in high-Ga content CIGSe solar cells that exhibit saturation in the V oc with increasing band gap. Our results suggest that compositional grading rather than bulk alloying, such as by creating In-rich surfaces, may be a better strategy to favorably engineering improved thin-film photovoltaics with larger-band gap absorbers.

08 HYDROGEN↗