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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Unearthing principal strengthening factors tuning the additive manufactured 15-5 PH stainless steel

Additive manufactured (AM) materials exhibit enhanced performance, while post-processing is essential to reinforce its properties. Controlling the tunable factors and the underlying strengthening mechanisms during the post-processing are a key to answering the calls from the industry and end users. We identified the principal strengthening factors that contribute to AM stainless steel under heat-treatment and weighed their importance. The as-built sample exhibited a unique microstructure with a heterogeneous grain size distribution, a small amount of retained austenite, high dislocation density, and dispersed oxide particles. The strengthening primarily by dislocation forest and additionally by heterogeneous grain size contributed to the as-built sample. Although aging slightly decreased dislocation strengthening, superior aging enhancement was achieved by Cu-precipitates. The solid-solutionizing not only increased the effective grain size but also reduced the dislocation density by eliminating the heterogeneous microstructure, which deteriorated the precipitation hardenability. Our findings shed light on the performance optimization of AM metals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Temperature-dependent mechanism on hardening mitigation in thermomechanically processed 800H alloys under neutron irradiation

Irradiation induced hardening is commonly observed in structural materials, and is often associated with the degraded ductility. This study explores the role of thermomechanical processing (TMP) in mitigating irradiation-induced hardening in Incoloy 800H. The radiation response of solution-annealed and TMP-treated samples was systematically investigated to elucidate the underlying mechanisms of hardening reduction. Neutron irradiation was performed on solution-annealed and TMP-treated samples at 359, 431, and 580 °C, revealing consistently lower hardening in TMP samples. Microstructural characterization compared dislocation loops, cavities, clusters, and precipitates to assess their contributions to hardening. The strengthening contributions from individual microstructural features were estimated, and the microstructure-derived yield strength is consistent with the hardness-converted yield strength. The microstructure–properties correlation revealed the temperature-dependent primary hardening mechanism: dislocation loops dominated at lower temperature, whereas Ni3(Al,Ti) γ′ precipitates were predominant at higher temperature. TMP reduced radiation-induced hardening through two mechanisms: (1) increased sink strength from dislocations and Ti(C,N) precipitates limited dislocation loop formation at lower temperatures, and (2) reduced Ti solute within the matrix in TMP samples suppressed γ′ precipitate formation at higher temperatures. These findings identify the mechanisms governing radiation-induced hardening across different temperatures, which lays the foundation for TMP optimization for the development of advanced radiation-tolerant materials.

Zhong, Weicheng [ORNL] (ORCID:0000000231589271)↗
DOE OSTI2024

Mechanical properties and deformation mechanisms of single crystal Mg micropillars subjected to high-strain-rate C-axis compression

Here, the mechanical properties and deformation mechanisms of single crystal magnesium under c-axis quasi-static and high-strain rate compressions are investigated through in situ scanning electron microscope (SEM) experiments and post-mortem transmission electron microscope (TEM) characterization. The findings revealed that ductility and high rates of hardening are preserved for pillars as large as 15 μm. Furthermore, rate effects result in a mild increase in flow stress with plastic deformations controlled primarily by the slip of type dislocations. Importantly and in contrast to other literature reports, plastic deformation occurs in the absence of twining. As the strain increases and plastic deformation exceeds about 4%, crystal rotation activates basal slip, <$\mathrm{a}$> type dislocations, resulting in a more rate independent flow stress. TEM observation on micropillars compressed at a strain rate of 250/s, revealed the activation of {${11}$$\bar{2}$$\bar{2}$} < $\bar{1}$$\bar{1}23$ > slip systems and high mobility of screw dislocations as major contributors to plastic strains in excess of 10% without fracture. These findings are relevant to the design of lightweight materials used in transportation systems, e.g., selection of material grain size. Moreover, the experimental data here reported provides the materials science community with a unique opportunity to validate discrete dislocation dynamics (DDD) formulations employed in multiscale design of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effects of strain rate on mechanical properties and deformation behavior of an austenitic Fe-25Mn-3Al-3Si TWIP-TRIP steel

The effects of quasi-static and low-dynamic strain rate (ε = 10 –4 /s to ε = 10 2 /s) on tensile properties and deformation mechanisms were studied in a Fe-25Mn-3Al-3Si (wt%) twinning and transformation-induced plasticity [TWIP-TRIP] steel. The fully austenitic microstructure deforms primarily by dislocation glide but due to the room temperature stacking fault energy [SFE] of 21 ± 3 mJ/m 2 for this alloy, secondary deformation mechanisms such as mechanical twinning (TWIP) and epsilon martensite formation (TRIP) also play an important role in the deformation behavior. The mechanical twins and epsilon-martensite platelets act as planar obstacles to subsequent dislocation motion on non-coplanar glide planes and reduce the dislocation mean free path. A high-speed thermal camera was used to measure the increase in specimen temperature as a function of strain, which enabled the use of a thermodynamic model to predict the increase in SFE. The influence of strain rate and strain on microstructural parameters such as the thickness and spacing of mechanical twins and epsilon-martensite laths was quantified using dark field transmission electron microscopy, electron channeling contrast imaging, and electron backscattered diffraction. The effect of sheet thickness on mechanical properties was also investigated. Increasing the tensile specimen thickness increased the product of ultimate tensile strength and total elongation, but had no significant effect on uniform elongation or yield strength. The yield strength exhibited a significant increase with increasing strain rate, indicating that dislocation glide becomes more difficult with increasing strain rate due to thermally-activated short-range barriers. Finally, a modest increase in ultimate tensile strength and minimal decrease in uniform elongation were noted at higher strain rates, suggesting adiabatic heating, slight changes in strain-hardening rate and observed strain localizations as root causes, rather than a significant change in the underlying TWIP-TRIP mechanisms at low values of strain.

36 MATERIALS SCIENCE↗
DOE OSTI2020

In-situ synchrotron diffraction study of the localized phase transformation and deformation behavior in NiTi SMA

The accumulation of dislocation defect was generally recognized as the origin of residual strain and the pseudoelastic instability in NiTi shape memory alloys (SMAs). In the present work, the pseudoelastic instability was studied by comparing the characteristics of Luders-type and uniform transformation mechanism via in-situ synchrotron-based high-energy X-ray diffraction (XRD) characterization. The experimental results showed that the Liiders-type mechanism could result in an intense and sharp increase of stress-induced martensite at the expense of austenite. The residual austenite with high lattice strain within the Luders band might be fully martensitic beyond the stress plateau of the E-a curve. With the accumulation of dislocation defect, the uniform martensitic transformation took place by the progressively homogeneous nucleation and growth of martensite in a local region. While the residual martensite and dislocation density was stabilized during mechanical cycling, the deformation of NiTi SMA turned into a mixture of (i) a balanced forward and reverse phase transformation between austenite and martensite, as well as (ii) the elastic deformation of the aggregate. As a result, there was no apparent increase in dislocation density detected during further cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effects of temperature on the irradiation responses of Al 0.1 CoCrFeNi high entropy alloy

Structural damage and chemical segregation in Al 0.1 CoCrFeNi high entropy alloy irradiated at elevated temperatures are studied using transmission electron microscopy (TEM) and atom probe tomography (APT). Irradiation-induced defects include dislocation loops, long dislocations and stacking-fault tetrahedra, but no voids can be observed. Furthermore, as irradiation temperature increases, defect density is decreased but defect size is increased, which is induced by increasing defect mobility. Finally, APT characterization reveals that ion irradiation at elevated temperatures can induce an enrichment of Ni and Co as well as a depletion of Fe and Cr at defect clusters, mainly including dislocation loops and long dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Divergent evolution of slip banding in CrCoNi alloys

Abstract Metallic materials under high stress often exhibit deformation localization, manifesting as slip banding. Over seven decades ago, Frank and Read introduced the well-known model of dislocation multiplication at a source, explaining slip band formation. Here, we reveal two distinct types of slip bands (confined and extended) in compressed CrCoNi alloys through multi-scale testing and modeling from microscopic to atomic scales. The confined slip band, characterized by a thin glide zone, arises from the conventional process of repetitive full dislocation emissions at Frank–Read source. Contrary to the classical model, the extended band stems from slip-induced deactivation of dislocation sources, followed by consequent generation of new sources on adjacent planes, leading to rapid band thickening. Our findings provide insights into atomic-scale collective dislocation motion and microscopic deformation instability in advanced structural materials.

Science & Technology - Other Topics↗
DOE OSTI2017

Statistical study of ductility-dip cracking induced plastic deformation in polycrystalline laser 3D printed Ni-based superalloy

Ductility-dip cracking in Ni-based superalloy, resulting from heat treatment, is known to cause disastrous failure, but its mechanism is still not completely clear. A statistical study of the cracking behavior as a function of crystal orientation in a laser 3D-printed DL125L Ni-based superalloy polycrystal is investigated here using the synchrotron X-ray microdiffraction. The dislocation slip system in each of the forty crystal grains adjacent to the 300 μm long crack has been analyzed through Laue diffraction peak shapes. In all these grains, edge-type geometrically necessary dislocations (GNDs) dominate, and their dislocation line directions are almost parallel to the crack plane. Based on Schmid's law, the equivalent uniaxial tensile force direction is revealed normal to the trace of the crack. A qualitative mechanism is thus proposed. Thermal tensile stress perpendicular to the laser scanning direction is elevated due to a significant temperature gradient, and thus locations in the materials where the thermal stress exceeds the yield stress undergo plastic deformation mediated by GND activations. As the dislocations slip inside the crystal grains and pile up at the grain boundaries, local strain/stress keeps increasing, until the materials in these regions fail to sustain further deformation, leading to voids formation and cracks propagation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The role of transient surface morphology on composition control in AlGaN layers and wells

The mechanisms governing “compositional pulling” during the growth of Al x Ga 1- x N wells are investigated. Gallium-rich Al x Ga 1- x N wells grown on high dislocation density AlN/sapphire templates exhibit asymmetric and diffuse composition profiles, while those grown on low dislocation density native AlN substrates do not. Furthermore, strain in all Al x Ga 1- x N wells is found to be pseudomorphic, ruling it out as the dominating driving force. Rather, the high threading dislocation density of the AlN template is considered to play the defining role. We propose that a transient surface morphology is introduced during dislocation mediated spiral growth, which, in conjunction with process supersaturation, determines the Ga incorporation. Finally, these findings provide insights into compositional pulling in high Ga content Al x Ga 1- x N grown on AlN and provide a route to grow thicker wells with very abrupt interfaces on native AlN substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Semicoherent oxide heterointerfaces: Structure, properties, and implications

In the quest for enhanced functionality of all sorts, nanostructured materials are becoming ever more common. This is particularly true of oxide/oxide heterostructures in which the high density of interfaces has been implicated in enhanced properties and used to engineer strain in oxide composite structures. These interfaces are often characterized by a network of misfit dislocations that relieve the lattice mismatch strain between the two materials, and these dislocations themselves are often suggested as the source of either enhancements or degradation of properties. Despite the importance and pervasiveness of misfit dislocations, however, there is still much that is unknown about their structure and properties, particularly in oxide/oxide heterostructures. Here, we give a perspective on the importance of these dislocation networks and the need to interrogate their impact on functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Carrier mobilities of (001) cadmium arsenide films

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd 3 As 2 ) grown by molecular beam epitaxy on lattice-matched III–V Al x In 1-x Sb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd 3 As 2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd 3 As 2 films exhibit electron mobilities of up to 41 000 cm 2 V -1 s -1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Early Damage Mechanisms in Nuclear Grade Graphite under Irradiation

Using Raman and X-ray photoelectron spectroscopy,we delineate the bond and defect structures in nuclear block graphite (NBG-18) under neutron and ion irradiation. The strengthening of the defect (D) peak in the Raman spectra under irradiation is attributed to an increase in the topological, sp2-hybridized defects. Using transmission electron microscopy, we provide evidence for prismatic dislocations as well as a number of basal dislocations dissociating into Shockley partials. The non-vanishing D peak in the Raman spectra, together with a generous number of dislocations, even at low irradiation doses, indicates a dislocation-mediated amorphization process in graphite.

graphite↗
DOE OSTI2020

In situ measurement and modelling of the growth and length scale of twins in α -uranium

Twinning is an important deformation mechanism in crystalline materials. Twins nucleate, then grow, forming a discrete pattern of deformation bands with a certain thickness. The mechanism for twin growth is not completely understood. We present a simple phase field model which captures the physics of twin growth and reproduces the details observed during in situ electron backscatter diffraction experiments on α-uranium. The interaction between residual dislocations at twin interfaces and mobile dislocations in untwinned regions increases the stress needed for twin growth. This is described by a nonlocal term in the proposed constitutive equations: the nucleation stress of a twin increases proportionally to the twin phase field in a neighborhood. Competition between slip and twinning favors the nucleation of a new twin rather than the growth of a preexisting twin. The phase field model is coupled with a crystal plasticity finite element solver that includes the plastic deformation due to twinning. Simulations are able to reproduce the number of twins and their thicknesses as a function of the strain observed during in situ electron backscatter diffraction experiments. The stress-strain curve is also reproduced. This comparison allows the values of the nucleation stress and the interaction strength between residual and mobile dislocations to be found. It also gives an estimation of the density of residual dislocations that is consistent with the observed twin thickness. Finally, this model can be applied to understand microstructural effects in materials using twinning as a strengthening mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2016

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si.

14 SOLAR ENERGY↗
DOE OSTI2018

Strategies for Thinning Graded Buffer Regions in Metamorphic Solar Cells and Performance Tradeoffs

Compositionally graded buffers (CGBs) have enabled the development of inverted metamorphic (IMM) multijunction solar cells that contain three or more junctions and exhibit record efficiencies. Typically, the CGB is grown thick with a constant grading rate, because this is the most straightforward way to minimize the threading dislocation density (TDD) in device active regions. The CGB growth represents a significant expense, in terms of materials consumption and capital cost, however, hampering the economic viability of metamorphic devices. This work explores strategies for thinning Ga1-xInxP CGBs from GaAs to InP while minimizing performance loss, as evaluated by the open-circuit voltage (VOC) of ~0.74 eV Ga0.47In0.53As solar cells. Using the Ga1-xInxP CGB as a model, we demonstrate that slower grading is necessary in certain regions of the grade where dislocation nucleation rates are higher. Grading must be more gradual in these regions to suppress threading dislocation density. Grading rates can be increased in non-critical areas where dislocation nucleation is lower, permitting a thinner buffer. We demonstrate the relationship between VOC and TDD, establishing tradeoffs between thickness and performance. Through careful design, we demonstrate a CGB with a 40% thickness reduction (2 im) achieved with a VOC decrease of only 6.3% (21 mV).

14 SOLAR ENERGY↗
DOE OSTI2023

Effect of Strain on the Resistivity and Thermal Conductivity of High Purity Niobium

High purity niobium (Nb) is a technologically important material for large-scale accelerator and nano-scale quantum computing applications in microwave frequency range. The high thermal conductivity and low resistivity of Nb are critical to the high performance at temperature range of 0.01–4.0 K. The presence of interstitials such as O, N, H, and C act as scattering centers and alter the mean free path, reducing resistivity and thermal conductivity, and contributing significantly to Nb's thermal performance for temperatures of 2.0 K and above. The residual resistivity ratio (RRR), defined as the ratio of the normal state resistivity at 300 K to that at 4.2 K (Nb, T c = 9.2 K), is an accepted direct estimate of the impurity content of fully recrystallized Nb. Complete re-crystallization of Nb is challenging unless very high temperatures are employed, which is often impractical, hence, in practice, dislocation and dislocation structures impact the thermal performance of Nb due to strong phonon scattering contributions. Furthermore, this paper reports on the degradation of thermal conductivity and RRR of high purity Nb large grain, single crystal with fixed impurity, varying strain, and dislocation content levels. Experimental thermal conductivity data fits the Boltzmann transport equation incorporating dislocation density.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Investigation of the relationship between classical and nonclassical ultrasound nonlinearity parameters and microstructural mechanisms in metals

This research studies two nonlinear ultrasound techniques: second harmonic generation and nonlinear resonant ultrasound spectroscopy, and the relationship to microstructural mechanisms in metals. The results show that there is a large change in both the classical, β, and nonclassical, α, ultrasound nonlinearity parameters in response to three specific microstructural mechanisms: precipitate growth in and along the grain boundaries, dislocations, and precipitate pinned dislocations. For example, both β and α increase with the growth of the precipitate radii (precipitate-pinned-dislocations). Additionally, both β and α increase when there is a growth of precipitates in and along the grain boundaries. As expected, β and α decrease when there is a removal of dislocations in the material. The relationship between β and α, and the microstructural mechanisms studied provide a quantitative understanding of the relationship between measured nonlinearity parameters and microstructural changes in metals, helping to demonstrate the possibility of using these two independent, but complementary, nonlinear ultrasound procedures to monitor microstructural damage.

Levy, Katherine Marie Scott↗