Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Band Structure”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Structural and electronic properties of TiX (X=N, As) in rock salt and zinc blende phase: A DFT study

Quantum mechanical first principle calculations have been performed to study the electronic and structural properties of TiN and TiAs in zinc blende (ZB) and rock salt (RS) structures. The full-potential linearized augmented plane wave (FP-LAPW) method has been used within the framework of density functional theory (DFT). The exchange correlation functional has been solved employing generalized gradient approximation (GGA). Our predicted results for lattice constants are in good agreement with the earlier findings. The electronic band structures of TiX are metallic in both the phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Interplay of paramagnetism and topology in the Fe-chalcogenide high- T c superconductors

The high-T c superconductor, FeTe 0.55 Se 0.45 , has recently been shown to support a surface state with topological character. In this study, we use low-energy laser-based angle-resolved photoemission spectroscopy with variable light polarization, including both linear and circular polarizations, to reexamine the same material and the related FeTe 0.7 Se 0.3 , with a larger Te concentration. In both cases, we observe the presence of a surface state displaying linear dispersion in a cone-like configuration. The use of circular polarization confirms the presence of a helical spin structure. These experimental studies are compared with theoretical studies that account for the local magnetic effects related to the paramagnetism observed in this system in the normal state. Finally, in contrast to previous studies, we find that including the magnetic contributions is necessary to bring the chemical potential of the calculated electronic band structure naturally into alignment with the experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Achieving large uniform tensile elasticity in microfabricated diamond

Diamond is not only the hardest material in nature, but is also an extreme electronic material with an ultrawide bandgap, exceptional carrier mobilities, and thermal conductivity. Straining diamond can push such extreme figures of merit for device applications. We microfabricated single-crystalline diamond bridge structures with ~1 micrometer length by ~100 nanometer width and achieved sample-wide uniform elastic strains under uniaxial tensile loading along the [100], [101], and [111] directions at room temperature. We also demonstrated deep elastic straining of diamond microbridge arrays. The ultralarge, highly controllable elastic strains can fundamentally change the bulk band structures of diamond, including a substantial calculated bandgap reduction as much as ~2 electron volts. Our demonstration highlights the immense application potential of deep elastic strain engineering for photonics, electronics, and quantum information technologies.

Dang, Chaoqun↗
DOE OSTI2015

Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta{sub 3}N{sub 5}

Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta{sub 3}N{sub 5}), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta{sub 3}N{sub 5} were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange–correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta{sub 3}N{sub 5} is present in terms of dielectric constant and effective masses. - Graphical abstract: Detailed investigation has been conducted from combined experimental and theoretical approaches on Raman and IR spectroscopies, electronic structures, dielectric constants and effective masses of TaON and Ta{sub 3}N{sub 5}. - Highlights: • Crystal structures of TaON and Ta{sub 3}N{sub 5} are discussed based on XRD and DFT calculation. • Raman and IR spectra of TaON and Ta{sub 3}N{sub 5} materials are measured and computed by DFPT method. • Optoelectronic properties of TaON and Ta{sub 3}N{sub 5} are discussed. • Dielectric constant and effective masses of TaON and Ta{sub 3}N{sub 5} are calculated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Resistive switching of a TaO{sub x}/TaON double layer via ionic control of carrier tunneling

Resistance random access memory (RRAM) is an attractive candidate for future non-volatile memory due to its superior features. As the oxide thickness is scaled down, the charge transport mechanism is also subject to the transition from hopping to tunneling dominant process, which is critically related to the interfacial electronic band structure. A TaO{sub x}/TaON double layer-based RRAM is fabricated and characterized in this work. Upon TaON insertion at the lower interface, the improved switching behavior is observed. The TaON at the bottom electrode interface blocks oxygen vacancy percolation due to strong N-O bonds and also modifies interfacial band alignment to lower the injected electron energy from bottom electrode due to higher tunneling barrier height than that of TaO{sub x}/Pt. This study suggested that a defect-minimized insertion layer like TaON with a proper interfacial band alignment is pivotal in RRAM for the effective ionic control of carrier tunneling resulting in non-linear I-V behavior with improved properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

First principle investigation of structural and electronic properties of bulk ZnSe

Electronic and structural properties of ZnSe are investigated using plane-wave self-consistent field method within the framework of density functional theory. The pseudopotential method within the local density approximation is used for the exchange-correlation potential. The equilibrium lattice parameter, static bulk modulus and its pressure derivative are calculated. The electronic band structure, partial density of states and density of states are also obtained. The results are compared with available theoretical calculations and experimental results.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Concentration dependent spectroscopic properties of Dy{sup 3+} ions doped boro-phosphate glasses

Dy{sup 3+} ions doped boro-phosphate glasses have been synthesized by melt quenching method and characterized through FTIR, absorption and luminescence spectral measurements. The presence of various stretching and bending vibrations of different borate and phosphate groups were identified from the FTIR spectra. In order to examine the electronic band structure of the studied glasses, Optical energy gap (E{sub opt}) and Urbach energy (ΔE) values were estimated from the absorption spectra. The Judd-Ofelt (JO) intensity parameters were calculated to examine the symmetry of the ligand environment around the Dy{sup 3+} ions site. The emission spectra exhibit two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponding to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} transitions respectively. The emission spectra were characterized through Commission International d’Eclairage (CIE) 1931 chromaticity diagram to explore its suitability for WLED applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Electronic structure as a guide in screening for potential thermoelectrics: Demonstration for half-Heusler compounds

In this study, we adopt a high-throughput search strategy that begins with electronic structure features to screen a set of half-Heusler compounds for thermoelectric performance. This is motivated by the contradictory electrical transport requirements, specifically high electrical conductivity σ and high thermopower S for obtaining high figure of merit ZT. We use an electronic fitness function that measures the extent to which a specific band structure decouples σ and S for this purpose. We then perform detailed, more costly, calculations of thermal conductivity and electrical properties for those compounds that have a high electronic fitness. This provides an efficient method for identifying promising compounds from a set of candidates. Lastly, we apply this to a set of 75 previously studied half-Heusler compounds. The approach identifies several compounds as having potential as thermoelectric materials. Importantly, these include not only some previously identified candidates, but also some other compounds that had not been identified previously using other screening methods.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Probing the origin of extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides

Combining angle-resolved photoemission spectroscopy and magnetotransport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron- hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Lastly, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High-temperature fractional quantum Hall state in the Floquet kagome flat band

A fractional quantum Hall effect (FQHE) has been predicted in a topological flat band (FB) by a single-particle band structure combined with phenomenological theory or solution of a many-body lattice Hamiltonian with fuzzy parameters. A long-standing roadblock toward the realization of a FB-FQHE is lacking the many-body solution of specific materials under realistic conditions. Here, we demonstrate a combined study of single-particle Floquet band theory with exact diagonalization (ED) of a many-body Hamiltonian. We show that a time-periodic circularly polarized laser inverts the sign of second-nearest-neighbor hopping in a kagome lattice and enhances spin-orbit coupling in one spin channel to produce a Floquet FB with a high flatness ratio of bandwidth over band gap, as exemplified in monolayer Pt 3 C 36 S 12 H 12 . The ED of the resultant Floquet-kagome lattice Hamiltonian gives a one-third-filling ground state with a laser-dependent excitation gap of a FQH state, up to an estimated temperature above 70 K. Our findings pave the way for exploring the alluding high-temperature FB-FQHE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Charge correlations suppress unconventional pairing in the Holstein model

In a recent work by Schrodi et al. [Phys. Rev. B. 104, L140506 (2021)], the authors find an unconventional superconducting state with a sign-changing order parameter using the Migdal-Eliashberg theory, including the first vertex correction. This unconventional solution arises despite using an isotropic bare electron-phonon coupling in the Hamiltonian. We examine this claim using hybrid quantum Monte Carlo for a single-band Holstein model with a cuprate-like noninteracting band structure and identical parameters to Schrodi et al.. Our Monte Carlo results for these parameters suggest that unconventional pairing correlations do not exceed their noninteracting values at any carrier concentration we have checked. Instead, strong charge-density-wave correlations persist at the lowest accessible temperatures for dilute and nearly half-filled bands. As a result, we present arguments for how vertex-corrected Migdal-Eliashberg calculation schemes can lead to uncontrolled results in the presence of Fermi surface nesting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Quantum oscillations in the anomalous spin density wave state of FeAs

Quantum oscillations in the binary antiferromagnetic metal FeAs are presented and compared to theoretical predictions for the electronic band structure in the anomalous spin density wave state of this material. Demonstrating a method for growing single crystals out of Bi flux, we utilize the highest quality FeAs to perform torque magnetometry experiments up to 35 T, using rotations of field angle in two planes to provide evidence for one electron and one hole band in the magnetically ordered state. Finally, the resulting picture agrees with previous experimental evidence for multiple carriers at low temperatures, but the exact Fermi surface shape differs from predictions, suggesting that correlations play a role in deviation from ab initio theory and cause up to a fourfold enhancement in the effective carrier mass.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Interfacial and electronic properties of heterostructures of MXene and graphene

MXene-based heterostructures have received considerable interest owing to their unique properties. In this paper, we examine various heterostructures of the prototypical MXene Ti 3 C 2 T 2 (T=O, OH, F; terminal groups) and graphene using density-functional theory. We find that the adhesion energy, charge transfer, and band structure of these heterostructures are sensitive not only to the surface functional group, but also to the stacking order. Due to its greatest difference in work function with graphene, Ti 3 C 2 (OH) 2 has the strongest interaction with graphene, followed by Ti 3 C 2 O 2 and then Ti 3 C 2 F 2 . Electron transfers from Ti 3 C 2 (OH) 2 to graphene but from graphene to Ti 3 C 2 O 2 and Ti 3 C 2 F 2 , which causes a shift in the Dirac point of the graphene bands in the heterostructures of monolayer graphene and monolayer MXene. In the heterostructures of bilayer graphene and monolayer MXene, the interface breaks the symmetry of the bilayer graphene; in the case of the AB-stacking bilayer, the electron transfer leads to an interfacial electric field that opens up a gap in the graphene bands at the K point. This internal polarization strengthens both the interfacial adhesion and the cohesion between the two graphene layers. The MXene-graphene-MXene and graphene-MXene-graphene sandwich structures behave as two mirror-symmetric MXene-graphene interfaces. In conclusion, our first-principles studies provide a comprehensive understanding for the interaction between a typical MXene and graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Theoretical investigations of the physical properties of zircon-type YVO{sub 4}

The crystal structure, electronic properties, elastic properties, hardness and thermodynamic properties of the laser host material zircon-type YVO{sub 4} are studied using the pseudopotential plane wave method within the local density approximation (LDA) and generalized gradient approximation (GGA). The calculated ground state values such as lattice parameter, bulk modulus and its pressure derivative, the band structure and densities of states were in favorable agreement with previous works and the existed experimental data. The elastic constants C{sub ij}, the aggregate elastic moduli (B, G, E), Poisson's ratio and elastic anisotropy have been investigated. In YVO{sub 4}, V-O bonds with shorter bond length and larger Mulliken population make great contribution to hardness than Y-O bonds. Using quasi-harmonic Debye model considering the phonon effects, bulk modulus, heat capacity and thermal expansion coefficient of YVO{sub 4} are calculated within a range of 0-6 GPa and 0-1200 K. - Graphical Abstract: (a) Directional dependence of Young's modulus in zircon-type YVO{sub 4} and (b) projections of the directional dependent Young's modulus in different planes for zircon-type YVO{sub 4}. The units are in GPa. Highlights: Black-Right-Pointing-Pointer This paper systematically studied the physical properties of zircon-type YVO{sub 4} from first-principles calculations. Black-Right-Pointing-Pointer Zircon-type YVO{sub 4} is mechanically stable and it is ductile for B/G>1.75 and v>0.26. Black-Right-Pointing-Pointer Universal elastic anisotropy index A{sup U} for zircon-type YVO{sub 4} is 2.41, so YVO{sub 4} is anisotropic. Black-Right-Pointing-Pointer V-O bonds with shorter bond length and larger Mulliken population make greater contribution to the hardness of YVO{sub 4}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

The first principle investigations of structural and electronic properties of ZnTe

Structural and electronic properties of ZnTe are investigated within the framework of density functional theory. The pseudopotential method along with local density approximation and generalized gradient approximation for the exchange-correlation potential is used within the quantum espresso package. The optimized equilibrium lattice parameter, bulk modulus and its pressure derivative are determined. The electronic band structure, density of states and partial density of states are calculated. The results are compared with available theoretical calculations and experimental results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Photon energy and polarization-dependent electronic structure of Cr-doped Bi 2 Se 3

In this article, we report a comparative study of the electronic structure of Cr-doped and pristine Bi 2 Se 3 . Circular dichroism and photon-energy-dependent angle-resolved photoemission experiments were performed. Even though the surface states seen on the Cr-doped samples are gapped, they exhibit strong circular dichroism, for which we provide its origin in accordance with the nontrivial band structure of the bulk. We note the surface electronic structure measurements with linear and circular polarized light show signatures that the orbital composition of the surface states is changed with Cr doping. Our observations not only provide further spectroscopic information about topological materials, but also promotes an alternative experimental tool to control their spin-orbital texture.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Disorder and diffuse scattering in single-chirality (TaSe 4 ) 2 ⁢I crystals

The quasi-one-dimensional chiral compound (TaSe 4 ) 2 I has been extensively studied as a prime example of a topological Weyl semimetal. Upon crossing its phase transition temperature $T$ CDW ≈263K, (TaSe 4 ) 2 I exhibits incommensurate charge density wave (CDW) modulations described by the well-defined propagation vector ∼(0.05,0.05,0.11), oblique to the TaSe 4 chains. Although optical and transport properties greatly depend on chirality, there is no systematic report about chiral domain size for (TaSe 4 ) 2 I. In this study, our single-crystal scattering refinements reveal a bulk iodine deficiency, and Flack parameter measurements on multiple crystals demonstrate that separate (TaSe 4 ) 2 I crystals have uniform handedness, supported by direct imaging and helicity-dependent terahertz emission spectroscopy. Our single-crystal x-ray scattering and calculated diffraction patterns identify multiple diffuse features and create a real-space picture of the temperature-dependent (TaSe 4 ) 2 I crystal structure. Further, the short-range diffuse features are present at room temperature and decrease in intensity as the CDW modulation develops. These transverse displacements, along with electron pinning from the iodine deficiency, help explain why (TaSe 4 ) 2 I behaves as an electronic semiconductor at temperatures above and below $T$ CDW , despite a metallic band structure calculated from density functional theory of the ideal structure.

36 MATERIALS SCIENCE↗