Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “point defect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Loschmidt-amplitude wave function spectroscopy and the physics of dynamically driven phase transitions

In this work, we introduce the Loschmidt amplitude as a powerful tool to perform spectroscopy of generic many-body wave functions and use it to interrogate the wave function obtained after ramping the transverse field quantum Ising model through its quantum critical point. Previous results are confirmed and a more complete understanding of the population of defects and of the effects of magnon-magnon interaction or finite-size corrections is obtained. The influence of quantum coherence is clarified.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1981

Failure analysis of a tool steel torque shaft

A low design load drive shaft used to deliver power from an experimental exhaust heat recovery system to the crankshaft of an experimental diesel truck engine failed during highway testing. An independent testing laboratory analyzed the failure by routine metallography and attributed the failure to fatigue induced by a banded microstructure. Visual examination by NASA of the failed shaft plus the knowledge of the torsional load that it carried pointed to a 100 percent ductile failure with no evidence of fatigue. Scanning electron microscopy confirmed this. Torsional test specimens were produced from pieces of the failed shaft and torsional overload testing produced identical failures to that which had occurred in the truck engine. This pointed to a failure caused by a high overload and although the microstructure was defective it was not the cause of the failure.

Reagan, J. R.↗
NASA NTRS1981

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Conway, E. J.↗
DOE OSTI2019

Defect-induced magnetism and Yu-Shiba-Rusinov states in twisted bilayer graphene

Atomic defects have a significant impact on the low-energy properties of graphene systems. By means of first-principles calculations and tight-binding models we provide evidence that chemical impurities modify both the normal and the superconducting states of twisted bilayer graphene. Here, a single hydrogen atom attached to the bilayer surface yields a triple-point crossing, whereas self-doping and threefold symmetry breaking are created by a vacant site. Both types of defects lead to time-reversal symmetry breaking and the creation of local magnetic moments. Hydrogen-induced magnetism is found to exist also at the doping levels where superconductivity appears in magic-angle graphene superlattices. As a result, the coexistence of superconducting order and defect-induced magnetism yields in-gap Yu-Shiba-Rusinov excitations in magic-angle twisted bilayer graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Symmetry Breaking Bias and the Dynamics of a Quantum Phase Transition

The Kibble-Zurek mechanism predicts the formation of topological defects and other excitations that quantify how much a quantum system driven across a quantum critical point fails to be adiabatic. We point out that, thanks to the divergent linear susceptibility at the critical point, even a tiny symmetry breaking bias can restore the adiabaticity. Furthermore, the minimal required bias scales like τ Q - β δ / ( 1 + z ν ) , where β , δ , z , ν are the critical exponents and τ Q is a quench time. We test this prediction by DMRG simulations of the quantum Ising chain. It is directly applicable to the recent emulation of quantum phase transition dynamics in the Ising chain with ultracold Rydberg atoms.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Ultrasonic detection technology based on joint robot on composite component with complex surface

Some components have complex surface, such as the airplane wing and the shell of a pressure vessel etc. The quality of these components determines the reliability and safety of related equipment. Ultrasonic nondestructive detection is one of the main methods used for testing material defects at present. In order to improve the testing precision, the acoustic axis of the ultrasonic transducer should be consistent with the normal direction of the measured points. When we use joint robots, automatic ultrasonic scan along the component surface normal direction can be realized by motion trajectory planning and coordinate transformation etc. In order to express the defects accurately and truly, the robot position and the signal of the ultrasonic transducer should be synchronized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Controllable Formation of Threefold-Coordinated Oxygen in Graphene by Low-Energy Ion Implantation

The atomically precise engineering of impurities in graphene and the understanding of their structural and carrier-dependent electronic properties at the nanoscale are crucial for advancing graphene-based nanoelectronics, catalysis, and energy technologies. Here, we demonstrate controllable incorporation of the elusive 3-fold-coordinated O substitutions into graphene using low-energy O + ion implantation under ultrahigh-vacuum conditions. By combining high-resolution scanning tunneling microscopy and spectroscopy (STM/S), bond-resolved noncontact atomic force microscopy techniques, and density functional theory (DFT) calculations, we resolve both the structural and electronic properties of the O-related defects. The STM/S measurements, corroborated by DFT calculations, uncover a characteristic impurity state that is energetically pinned to the Dirac point across different charge-carrier doping regimes. Molecular dynamics simulations further reveal the distribution of implantation-induced configurations and identify the formation of 3-fold-coordinated O dopants. Furthermore, this work provides a viable route to incorporate 3-fold-coordinated O dopants and opens new opportunities for controlled defect engineering in graphene.

3-fold-coordinated oxygen↗
NASA NTRS2001

Modeling Ballistic Current Flow in Carbon Nanotube Wires

Experiments have shown carbon nanotubes (CNT) to be almost perfect conductors at small applied biases. The features of the CNT band structure, large velocity of the crossing subbands and the small number of modes that an electron close to the band center / Fermi energy can scatter into, are the reasons for the near perfect small bias conductance. We show that the CNT band structure does not help at large applied biases - electrons injected into the non crossing subbands can either be Bragg reflected or undergo Zener-type tunneling. This limits the current carrying capacity of CNT. We point out that the current carrying capacity of semiconductor quantum wires in the ballistic limit is different, owing to its band structure. The second aspect addressed is the relationship of nanotube chirality in determining the physics of metal-nanotube coupling. We show that a metallic-zigzag nanotube couples better than an armchair nanotube to a metal contact. This arises because in the case of armchair nanotubes, while the pi band couples well, the pi* band does not couple well to the metal. In the case of zigzag nanotube both crossing modes couple reasonably well to the metal. Many factors such as the role of curvature, strain and defects will play a role in determining the suitability of nanotubes as nanowires. From the limited view point of metal-nanotube coupling, we feel that metallic-zigzag nanotubes are preferable to armchair nanotubes.

Anantram, M. P.↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Role of defects on the surface properties of HfC

HfC has shown promise as a material for field emission due to the low work function of the (100) surface and a high melting point. Recently, HfC tips have exhibited unexpected failure after field emission at 2200K. Characterization of the HfC tips identified faceting of the parabolic tip dominated by coexisting (100) and (111) surfaces. To investigate this phenomenon, we used density functional theory (DFT) simulations to identify the role of defects and impurities (Ta, N, O) on HfC surface properties. Carbon vacancies increased the surface energy of the (100) surface from 2.35 J/m 2 to 4.75 J/m 2 and decreased the surface energy of the carbon terminated (111) surface from 8.75 J/m2 to 3.48 J/m 2 . Once 60% of the carbon on the (100) surface have been removed the hafnium terminated (111) surface becomes the lowest energy surface, suggesting that carbon depletion may cause these surfaces to coexist. The addition of Ta and N impurities to the surface are energetically favorable and decrease the work function, making them candidate impurities for improving field emission at high temperatures. Overall, DFT simulations have demonstrated the importance of understanding the role of defects on the surface structure and properties of HfC.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Visual field defects after missile injuries to the geniculo-striate pathway in man.

The main objective of the survey reported was a quantitative comparison of different visual functions at identical retinal points of individual patients. The possibility to develop objective forms of visual-field testing was also explored, taking into account reports by Frydrychowicz and Harms (1940) and Harms (1951). These investigators had insisted that pupillary responses to light are depressed in areas of homonymous scotomata. The shapes of homonymous visual field defects are discussed together with questions regarding the association and dissociation of symptoms.

Koerner, F.↗
DOE OSTI2019

Understanding the Role of Oxygen Vacancy in Visible–Near-Infrared-Light-Absorbing Ferroelectric Perovskite Oxides Created by Off-Stoichiometry

Recently, the visible or even-to-near-infrared light absorbing perovskite ABO 3 solid state solutions, show promising application in solar cells and multienergy harvesters or sensors by simultaneously introducing transition metal and oxygen vacancies. However, the existence of oxygen vacancies fundamentally causes photoexcited carrier trapping and large leakage current. Therefore, it is still challenging to limit oxygen vacancies while maintaining low bandgap and high ferroelectricity. Here, an efficient charge compensation strategy by finely adjusting the ion ratio on the A-site to obtain an oxygen-vacancy-free relaxer ferroelectric is demonstrated in the system of Na x BiyTiO 3 -BaTi 0.5 Ni 0.5 O 3 , where y > x. It is found that the oxygen-vacancy-free composition still yields strong visible-near-infrared-light-absorbing and enhanced photoresponse, in which the photocurrent density doubles from approximate to 0.16 to approximate to 0.32 mu A cm -2 . A new bandgap tuning mechanism is proposed according to the local structural information of Ni ions obtained via extended X-ray absorption fine structure. Moreover, this work succeeds in establishing the relationship between the concentration of oxygen vacancies and ferroelectric/piezoelectric properties of Na x BiyTiO 3 -BaTi 0.5 Ni 0.5 O 3 . Finally, this research points out a promising route to the material design of bandgap engineered ferroelectrics with controlled defects, which is expected to benefit a wide range of functional energy conversion devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Development of an interatomic potential for the W–Ta system

A physics-inspired, data-driven interatomic potential framework for multi-element system is presented. This potential is based on the generalization of the embedded atom method potential and systematically incorporates two-, three- and many-body effects. Different atomic environments are described by atom-centered Gaussian basis sets which provides sufficient flexibility to capture diverse atomic environments and allows for easy optimization of the free parameters. An interatomic potential model for the tungsten–tantalum (W–Ta) system is developed using this framework by training on data from ab initio density functional theory (DFT) calculations. The potential is thoroughly tested at various compositions by comparing bulk and defect properties from experimental and DFT data. It is shown that the potential predicts the elastic constants, defect properties, such as vacancy and interstitial formation energies, core structures of dislocations, and melting points for both pure and tantalum and tungsten with an accuracy comparable to other single element machine learning based potentials. In conclusion, the potential model is used to investigate the formation energies of ordered alloys and vacancy formation energies for chemically random W–Ta alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Defect-Free Growth of Decagonal Quasicrystals around Obstacles

Quasicrystals are aperiodic solids with exotic physical properties. The mechanisms driving their growth are far from understood, particularly in the presence of rigid obstacles. Here, using in situ synchrotron x-ray tomography and molecular dynamics simulations, we investigate the interaction between decagonal quasicrystals and obstacles (shrinkage pores) during solidification of an Al 79 ⁢Co 6 ⁢Ni 15 alloy. The results reveal defect-free quasicrystal growth around the pores, independent of pore size and geometry. Our findings point to a universal feature of aperiodic solids: their ability to accommodate structural disruptions due to additional (phasonic) degrees of freedom. This Letter opens new possibilities for synthesizing large-scale, single quasicrystals from a liquid metal precursor.

alloys↗
NASA NTRS1974

Low-temperature thermostatics of face-centered-cubic metallic hydrogen

The thermostatic properties of a high-symmetry phase of metallic hydrogen with atomic sphere radius between 0.1 and 1.5 bohr are studied, with special emphasis accorded to electronic screening and quantum proton motion. The electron-proton and proton-proton interactions receive a perturbation treatment based on the Singwi dielectric function, while the proton motion is handled by self-consistent harmonic approximation. Quantum behavior is found to be less pronounced than expected, and nuclear magnetism is absent. The phonon spectrum is, however, affected by screening and large proton motion. The zero-point vibrational energy and the superconducting critical temperature are below previous estimates. The crystalline-defect formation energies are a few times the Debye energy, which implies that defects contribute significantly to melting at the lower particle densities.

Caron, L. G.↗
NASA NTRS1997

Carbon Nanotubes: Molecular Electronic Components

The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale molecular electronic networks. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal graphene sheet, more complex joints require other mechanisms. In this work we explore structural characteristics of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme. The study of pi-electron local densities of states (LDOS) of these junctions reveal many interesting features, most prominent among them being the defect-induced states in the gap.

Srivastava, Deepak↗
NASA NTRSDate not supplied

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

With an increase of control over crystalline defects, metallorganic vapor phase epitaxy (MOVPE)-grown III-V-on-Si multijunction solar cells have seen rapid increases in efficiency in recent years, pointing to a promising path to lower cost III-V solar cells. However, the cost of chemo-mechanical polishing the Si wafers to prepare them for epitaxy is high. The use of V-groove nanopatterns enables similar defect reduction to that achieved on planar wafers, but the nanopatterns can be fabricated with a low-cost process. While V-grooves offer advantages over planar Si, they add complexity to the growth process. In particular, coalescence can cause the formation of threading dislocations, and the highly-directional growth conditions required for coalescence are unusual for MOVPE. We have studied the coalescence of GaP films nucleated directly on V-groove Si by MOVPE. We observed that for optimized growth conditions (V/III=5,000 and T=800 C) two growth modes were possible, and the resulting morphology depended on the exact geometry of the SiNx cap used to cover the (0 0 1)-oriented Si at the tops of the grooves. For caps with a width >100 nm, noncoalescing, nano ridge-like growth terminating in f1 1 1g facets was observed. For narrower caps, coalescence with an RMS roughness of 0.2 nm as measured by atomic force microscopy was observed. We will discuss mechanisms responsible for this phenomenon, including the role of Si from the substrate surface. The dislocation dynamics of this system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). We find that V-grooves do not block dislocation glide; ECCI measurements show misfit dislocations greater than 10 micrometers long observed to continue perpendicularly across neighboring V-grooves. In addition, all threading dislocations appear to lie on f1 1 1g planes, consistent with the GaP relaxing via glided-in glissile dislocations. The dislocation dynamics and morphological evolution of the coalescence of GaP on Si, possible mechanisms behind the observed phenomenons, and further dislocation mitigation strategies for these materials will be presented.

dislocation dynamics↗