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NASA NTRS1995

Experimental investigation of the inlet detector configuration variation in the flow field at Mach 1.9

In recent years, active research has been conducted to study the technological feasibility of supersonic laminar flow control on the wing of the High Speed Civil Transport (HSCT). For this study, the F-16XL has been chosen due to its highly swept crank wing planform that closely resembles the HSCT configurations. During flights, it is discovered that the shock wave generated from the aircraft inlet introduces disturbances on the wing where the data acquisition is conducted. The flow field about a supersonic inlet is characterized by a complex three dimensional pattern of shock waves generated by the geometrical configuration of a deflector and a cowl lip. Hence, in this study, experimental method is employed to investigate the effects of the variation of deflector configuration on the flow field, and consequently, the possibility of diverting the incoming shock-disturbances away from the test section. In the present experiments, a model composed of a simple circular tube with a triangular deflector is designed to study the deflector length and the deflector base width variation in the flow field. Experimental results indicate that the lowest external pressure ratio is observed at the junction where the deflector lip and the inlet cowl lip merge. Also, it is noted that the external pressure ratio, the internal pressure ratio, the coefficient of spillage drag, and the shock standoff distance decrease as the deflector length increases. In addition, the Redefined Total Pressure Recovery Ratio (RTPRR) increases with an increase in the deflector length. Results from the study of the effect of the deflector's base width variation on the flow field indicate that the lowest external pressure ratio is observed at the junction between the inlet cowl lip and the deflector lip. As the base width of the deflector increases, the external pressure ratio at 0 rotation increases, whereas the external pressure ratio at 180 rotation decreases. In addition, the internal pressure ratio and the coefficient of spillage drag decrease as the base width of the deflector increases. However, RTPRR and shock standoff distance increase as the base width increases. In conclusion, as deflector dimensions vary, distinctive patterns in the pressure variation around the inlet deflector are observed. With an increase in the deflector length and base width, the magnitude of shock-disturbances are weakened due to a decrease in the external pressure ratio. Also, as the deflector length and base width increase, a smaller bow shock angle is formed. Therefore, the inlet shock wave formation would be significantly altered, and consequently, shock disturbances on the wing test section can be avoided through appropriately designing the deflector.

Hwang, Kyu C.↗

NASA NTRS1994

Light emitting diodes as a plant lighting source

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. A number of LED characteristics are of considerable importance in selecting a light source for plant lighting in a controlled environment facility. Of particular importance is the characteristic that light is generated by an LED at a rate far greater than the corresponding thermal radiation predicted by the bulk temperature of the device as defined by Plank's radiation law. This is in sharp contrast to other light sources, such as an incandescent or high intensity discharge lamp. A plant lighting system for controlled environments must provide plants with an adequate flux of photosynthetically active radiation, plus providing photons in the spectral regions that are involved in the photomorphogenic and phototropic responses that result in normal plant growth and development. Use of light sources that emit photons over a broad spectral range generally meet these two lighting requirements. Since the LED's emit over specific spectral regions, they must be carefully selected so that the levels of photsynthetically active and photomorphogenic and phototropic radiation meet these plant requirements.

Bula, R. J.↗

NASA NTRS1996

SNS Devices With Pinhole-Defined Active Regions

Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.

Hunt, Brian D.↗

NASA NTRS1994

Experiment K-7-18: Effects of Spaceflight in the Muscle Adductor Longus of Rats Flown in the Soviet Biosatellite Cosmos 2044: A Study Employing Neural Cell Adhesion Molecules (N-CAM) Immunocytochemistry and Conventional Morphological Techniques (Light and Electron Microscopy) - Part 1

The effects of spaceflight upon the 'slow' muscle adductor longus was examined in rats flown in the Soviet Biosatellite COSMOS 2044. Three groups - synchronous, vivarium and basal served as controls. The techniques employed included standard methods for light microscopy, N-CAM immunocytochemistry and electron microscopy. Light microscopic observations revealed myofiber atrophy, contraction bands and segmental necrosis accompanied by cellular infiltrates composed of macrophages, leucocytes and mononuclear cells. N-CAM immunoreactivity was seen (N-CAM-IR) on the myofiber surface, satellite cells and in regenerating myofibers reminiscent of myotubes. Ultrastructural alterations included Z band streaming, disorganization of myofibrillar architecture, sarcoplasmic degradation, extensive segmental necrosis with preservation of the basement membrane, degenerative phenomena of the capillary endothelium and cellular invasion of necrotic areas. Regenerating myofibers were identified by the presence of increased amounts of ribosomal aggregates and chains of polyribosomes associated with myofilaments that displayed varied distributive patterns. The principal electron microscopic changes of the neuromuscular junctions consisted of a decrease or absence of synaptic vesicles, degeneration of axon terminals, increased number of microtubules, vacant axonal spaces and axonal sprouting. The present observations indicate that major alterations such as myofibrillar disruption and necrosis, muscle regeneration and denervation and synaptic remodeling at the level of the neuromuscular junction may take place during spaceflight.

Daunton, N. G.↗

NASA NTRS1996

A 850 GHz SIS receiver employing silicon micro-machining technology

A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

Kooi, J. W.↗

NASA NTRS1997

Micromachined Millimeter- and Submillimeter-wave SIS Heterodyne Receivers for Remote Sensing

This is a progress report for the second year of a NASA-sponsored project. The report discusses the design and fabrication of micromachined Superconductor Insulator Superconductor (SIS) heterodyne receivers with integrated tuning elements. These receivers tune out the functional capacitance at desired frequencies, resulting in less noise, lower temperatures and broader bandwidths. The report also discusses the design and fabrication of the first monolithic 3x3 focal-plane arrays for a frequency range of 170-210 GHz. Also addressed is the construction of a 9-channel bias and read-out system, as well as the redesign of the IF connections to reduce cross talk between SIS junctions, which become significant a frequency of 1.5 GHz IF. Uniformity of the junction arrays were measured and antenna beam patterns of several array elements under operating conditions also were measured. Finally, video and heterodyne responses of our focal-plane arrays were measured as well. Attached is a paper on: 'Development of a 170-210 GHz 3x3 micromachined SIS imaging array'.

Hu, Qing↗

NASA NTRS1998

Development of SIS Mixers for 1 THz

SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4 Delta/h). However, the performance degrades rapidly above the gap frequency of niobium (2 Delta/h approx. 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.

Zmuidzinas, J.↗

NASA NTRS1997

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗

NASA NTRS1998

Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing

A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

Hu, Qing↗

NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗

NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

NASA NTRS1999

Effects of Spaceflight on the Attachment of Muscle to the Tibia, Fibula and Calcaneus

Microgravity significantly reduces transmission of ground-reaction forces to bones, promoting atrophy. There is little information available concerning the effects of microgravity on bones at sites where anti-gravity muscles are attached (tendon-bone junctions). This study evaluates the effects of microgravity on the origin and insertion sites of anti-gravity muscles on the rat tibia, fibula and calcaneus. Changes in the strength of those tendon-bone junctions could predispose the animal to injury following spaceflight.

Johnson, R. B.↗

NASA NTRS1994

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Weinberg, I.↗

NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

NASA NTRS2000

A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory

We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Kooi, J. W.↗

NASA NTRS2000

Thin-Film Photovoltaic Solar Array Parametric Assessment

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Hoffman, David J.↗

NASA NTRS2000

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

The Terra spacecraft (formerly identified as EOS AM1) is the flagship in a planned series of NASA/GSFC (Goddard Space Flight Center) Earth observing system satellites designed to provide information on the health of the Earth's land, oceans, air, ice, and life as a total ecological global system. It has been successfully performing its mission since a late-December 1999 launch into a 705 km polar orbit. The spacecraft is powered by a single wing, flexible blanket array using single junction (SJ) gallium arsenide/germanium (GaAs/Ge) solar cells sized to provide five year end-of-life (EOL) power of greater than 5000 watts at 127 volts. It is currently the highest voltage and power operational flexible blanket array with GaAs/Ge cells. This paper briefly describes the wing design as a basis for discussing the operation of the electronics and mechanisms used to achieve successful on-orbit deployment. Its orbital electrical performance to date will be presented and compared to analytical predictions based on ground qualification testing. The paper concludes with a brief section on future applications and performance trends using advanced multi-junction cells and weight-efficient mechanical components.

Kurland, Richard↗

NASA NTRS2000

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

Kurland, Richard↗