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At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Charge density waves in two-dimensional transition metal dichalcogenides

Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. Finally, we discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Intrinsic carrier mobility of a single-layer graphene covalently bonded with single-walled carbon nanotubes

We report intrinsic carrier mobility calculations of a two-dimensional nanostructure that consists of porous single layer graphene covalently bonded with single-walled carbon nanotubes on both sides. We used first-principles calculation and found that the deformation potential of such system is about 25% of that of graphene, and the carrier mobility is about 5 × 10{sup 4} cm{sup 2} V{sup −1} s{sup −1} for both electrons and holes, about one order of magnitude lower than that of graphene. This nanostructure and its three-dimensional stacking could serve as novel organic electronic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Iron-Based Chalcogenide Spin Ladder BaFe2 X 3 (X = Se,S)

The relevance of magnetic, structural, orbital, and charge degrees of freedom in the iron-based superconductors (FeSCs) and related materials occupies a central focus in condensed matter physics. While the majority of iron-based materials exhibit the same two-dimensional iron square lattice structural motif, a family of AFe2X3 (X = Se,S) compounds introduces a quasi-one-dimensional (1D) ladder motif, which resembles the two-legged spin ladder copper oxide materials. Furthermore, unlike most parent compounds of FeSCs, the members of this spin ladder family are insulators. Recently, a superconducting transition has been observed under pressure with Tc up to 24 K, similar to the pressure-induced superconductivity in the copper oxide ladder Sr14-xCaxCu24O41 material, stimulating much interest. Here, we review the magnetic, structural, and electronic properties in this family, particularly in the BaFe2X3 series tuned by pressure and by chemical substitution. The established pressure-temperature (P-T) and carrier concentration-temperature (x-T) phase diagrams in related materials provide useful information to extend the variety of high-temperature superconductors and compare with other FeSCs. We also review some essential information about analogous square lattice FeSCs.

Wu, S↗
DOE OSTI2014

Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence

Hexagonal boron nitride (hBN) is an emerging material for the exploration of new physics in two-dimensional (2D) systems that are complementary to graphene. Nanotubes with a diameter (∼60 nm) that is much larger than the exciton binding energy in hBN have been synthesized and utilized to probe the fundamental optical transitions and the temperature dependence of the energy bandgap of the corresponding 2D hBN sheets. An excitonic transition at 5.901 eV and its longitudinal optical phonon replica at 5.735 eV were observed. The excitonic emission line is blue shifted by about 130 meV with respect to that in hBN bulk crystals due to the effects of reduced dimensionality. The temperature evolution of the excitonic emission line measured from 300 to 800 K revealed that the temperature coefficient of the energy bandgap of hBN nanotubes with large diameters (or equivalently hBN sheets) is about 0.43 meV/{sup 0}K, which is a factor of about 5 times smaller than the theoretically predicted value for the transitions between the π and π* bands in hBN bulk crystals and 6 times smaller than the measured value in AlN epilayers with a comparable energy bandgap. The observed weaker temperature dependence of the bandgap than those in 3D hBN and AlN is a consequence of the effects of reduced dimensionality in layer-structured hBN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect

An efficient spin-separator that operates in quantum spin hall phase has been investigated for two-dimensional group-IV materials. A three-terminal Y-shaped device has been simulated via non-equilibrium Green Function to demonstrate the separation of unpolarized current at source terminal into spin-polarized current of opposite polarity at the two drain terminals. Device controls, i.e., tunable buckling and perpendicular magnetic field have been modeled comprehensively to evaluate the device feasibility and performance. It is shown that these controls can preferentially steer current between the two drains to create a differential charge current with complementary spin polarization, thus enabling a convenient regulation of output signal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

MAX phase materials and MXenes as hydrogen barrier coatings

Hydrogen and its isotopes play an important role in nuclear applications, but their permeation and radioactivity lead to degradation of materials. Therefore, hydrogen isotope permeation barriers are an important supporting technology. Unfortunately, most permeation barriers that perform well in the laboratory fail when placed in radiation environments. The goal of this work is to begin the development of next generation permeation barriers with materials known to have good stability under neutron irradiation, and then tailor their composition and structure to maximize their barrier properties. In particular MAX phase materials and their two-dimensional analogues (MXenes) have been chosen due their excellent stability under neutron irradiation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2015

Electrical characterization of multilayer HfSe{sub 2} field-effect transistors on SiO{sub 2} substrate

We fabricated and characterized two-dimensional field-effect transistors (FETs) based on hafnium diselenide (HfSe{sub 2}) crystalline nanoflakes. The HfSe{sub 2} FET exhibits an n-type semiconductor behavior with a high on/off current ratio exceeding 7.5 × 10{sup 6}. In the temperature range of 120 K–280 K, the thermally activated transport is observed at high carrier concentrations, while at low concentrations and low temperatures hopping conduction dominates the transport mechanism. We also observed the metal insulator transition at carrier density of ∼1.8 × 10{sup 12 }cm{sup −2}. This initial report on the physical and electrical characterization of two dimensional HfSe{sub 2} material demonstrates the feasibility of this semiconducting material for electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Ultrastrong coupling of integer Landau Level Polaritons

We investigated theoretically the coupling between a cavity resonator and the cyclotron transition of a two dimensional electron gas under an applied perpendicular magnetic field. In such systems the vacuum Rabi frequency {Omega}, normalized to the cyclotron frequency {omega}{sub 0}, is shown to scale as {radical}({alpha}n{sub QW{nu}}), where {alpha} is the fine structure constant, n{sub QW} is the number of quantum wells and {nu} is the filling factor in each well. This implies that, with realistic parameters of a high-mobility semiconductor two dimensional electron gas, the dimensionless coupling {Omega}/{omega}{sub 0} can be much larger than one.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Magneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation

Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking-property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic electronic state is not yet fully understood since it is rarely encountered in experiment. The microwave-radiation-induced zero-resistance state in the high mobility GaAs/AlGaAs 2D electron system is believed to be an example where negative magneto-conductivity/resistivity is responsible for the observed phenomena. Here, we examine the magneto-transport characteristics of this negative conductivity/ resistivity state in the microwave photo-excited two-dimensional electron system (2DES) through a numerical solution of the associated boundary value problem. The results suggest, surprisingly, that a bare negative diagonal conductivity/resistivity state in the 2DES under photo-excitation should yield a positive diagonal resistance, with a concomitant sign reversal in the Hall voltage.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

A type-I van der Waals heterostructure formed by monolayer WS 2 and trilayer PdSe 2

Two-dimensional (2D) heterostructures, formed by stacking 2D semiconductors through the van der Waals force, have been extensively studied recently. However, the majority of the heterostructures discovered so far possess type-II interfaces that facilitate interlayer charge separation. Type-I interfaces, on the other hand, confine both electrons and holes in one layer, which is beneficial for optical applications that utilize electron–hole radiative recombination. So far, only a few type-I 2D heterostructures have been achieved, which has limited the construction of multilayer heterostructures with sophisticated band landscapes. Here, we report experimental evidence of a type-I interface between monolayer WS 2 and trilayer PdSe 2 . Two-dimensional PdSe 2 has emerged as a promising material for infrared optoelectronic and other applications. We fabricated the heterostructure by stacking an exfoliated monolayer WS 2 flake on top of a trilayer PdSe 2 film, synthesized by chemical vapor deposition. Photoluminescence spectroscopy measurements revealed that the WS 2 exciton peak is significantly quenched in the heterostructure, confirming efficient excitation transfer from WS 2 to PdSe 2 . Femtosecond transient absorption measurements with various pump/probe configurations showed that both electrons and holes photoexcited in the WS 2 layer of the heterostructure can efficiently transfer to PdSe 2 , while neither type of carriers excited in PdSe 2 can transfer to WS 2 . These experimental findings establish a type-I band alignment between monolayer WS 2 and trilayer PdSe 2 . Furthermore, our results further highlight PdSe 2 as an important 2D material for constructing van der Waals heterostructures with emergent electronic and optoelectronic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2011

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Grain boundary and its hydrogenated effect in stanene

The geometric and electronic properties of grain boundary (GB) in two-dimensional (2D) stanene have been investigated by first-principles calculations. Four typical GB structures with particularly low formation energies were found. These extended defects act as quasi-one-dimensional semiconductor or metallic wires depending on their geometric structures. Moreover, they are reactive and the adsorption of H atoms at the GB region is more stable than the stanene bulk region. A single H adsorption poses a drastic effect on the electronic behavior of GB defects, and the band structures can be tuned by the coverages of H adsorption at these GB defects in stanene. The present results indicate that GBs are important defects in stanene which may be useful for nanomaterial devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Entrainment of Electrons in a Semiconductor Nanostructure by a Flow of Neutral Particles

The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Semiconductor Nanoplatelet Excimers

Excimers, a portmanteau of “excited dimer”, are transient species that are formed from the electronic interaction of a fluorophore in the excited state with a neighbor in the ground state, which have found extensive use as laser gain media. Although common in molecular fluorophores, this work presents evidence for the formation of excimers in a new class of materials: atomically precise two-dimensional semiconductor nanoplatelets. Colloidal nanoplatelets of CdSe display two-color photoluminescence resolved at low temperatures with one band attributed to band-edge fluorescence and a second, red band attributed to excimer fluorescence. Previously reasonable explanations for two-color fluorescence, such as charging, are shown to be inconsistent with additional evidence. As with excimers in other materials systems, excimer emission is increased by increasing nanoplatelet concentration and the degree of cofacial stacking. In conclusion, consistent with their promise as low-threshold gain media, amplified spontaneous emission emerges from the excimer emission line.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Nanoscale lattice dynamics in hexagonal boron nitride moiré superlattices

Twisted two-dimensional van der Waals (vdW) heterostructures have unlocked a new means for manipulating the properties of quantum materials. The resulting mesoscopic moiré superlattices are accessible to a wide variety of scanning probes. To date, spatially-resolved techniques have prioritized electronic structure visualization, with lattice response experiments only in their infancy. Here, we therefore investigate lattice dynamics in twisted layers of hexagonal boron nitride (hBN), formed by a minute twist angle between two hBN monolayers assembled on a graphite substrate. Nano-infrared (nano-IR) spectroscopy reveals systematic variations of the in-plane optical phonon frequencies amongst the triangular domains and domain walls in the hBN moiré superlattices. Our first-principles calculations unveil a local and stacking-dependent interaction with the underlying graphite, prompting symmetry-breaking between the otherwise identical neighboring moiré domains of twisted hBN.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well

The theory of phonon-drag thermopower resulting from a temperature gradient in the plane of a two-dimensional electron gas layer in a parabolic quantum well is developed. The interaction mechanisms between electrons and acoustic phonons are considered, taking into account potential screening of the interaction. It is found that the effect of electron drag by phonons makes a significant contribution to the thermopower of the two-dimensional electron gas. It is shown that the consideration of screening has a significant effect on the drag thermopower. For the temperature dependence of the thermopower in a parabolic GaAs/AlGaAs quantum well in the temperature range of 1–10 K, good agreement between the obtained theoretical results and experiments is shown.

36 MATERIALS SCIENCE↗