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An interim draft of a set of test procedures, developed by NASA/ERDA, for the manufacture of solar cells is introduced. This version includes procedures for cell testing both outdoors in natural sunlight and indoors in simulated sunlight, a description of the necessary apparatus and equipment, the calibration and use of standard solar cells, and a proposed air-mass-two (AM2) solar spectrum.
Three leading thin-film photovoltaic (PV) technologies - cadmium telluride (CdTe), CuIn1-xGaxSe2 (CIGS), and perovskite solar cells (PSCs) - are all polycrystalline, but otherwise appear to have little in common. A comprehensive examination of these technologies, however, reveals a common theme: the formation of two-dimensional (2D) van der Waals materials at three-dimensional (3D) absorber interfaces and grain boundaries. In CdTe, the 2D compound is CdCl2; in CIGS, it is XInSe2 (X= K, Rb, Cs) with X depending on the heavy-alkali post-deposition treatment used; and in lead halide PSCs, PbI2 forms naturally, but many new, more stable, 2D perovskites have also been incorporated. Generally, these 2D interfacial materials are present not by design, but instead have evolved from their 3D counterparts during standard device processing. Here, new data, together with evidence compiled from the literature, are presented to illustrate both the existence of 3D/2D interfaces in CdTe, CIGS, and PSCs, and their correlation with improved passivation and device performance. This suggests that 3D/2D passivation may be a heretofore unappreciated key to successful polycrystalline thin-film PV. Finally, the desired attributes of successful low-dimensional layers are presented with rational design strategies for next generation polycrystalline solar cells.
After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.
Effect of cell vintage and certain testing procedures on degradation of cadmium sulfide thin film solar cells
Radiation induced degradation, in front and back illuminated 84 and 1250 ohm-cm n+pp+ silicon solar cells, was determined and cell performance interpreted using calculated optically injected charge distributions and cell voltage components. The 84 ohm-cm cell degraded less when illuminated from the front or n+ side compared to that when illuminated from the back or p+ side. On the other hand, the 1250 ohm-cm cell degraded less when back illuminated. It is concluded that, in addition to the usual mechanisms leading to decreased collection efficiencies, loss of conductivity modulation is a major cause of radiation damage in high resistivity silicon solar cells. These results suggest that radiation damage to high resistivity n+pp+ cells can be decreased by increasing cell collection efficiency and illuminating the cells from the p+ side.
Optimum field thicknesses of radiation-resistant drift-field solar cells obtained by continuity equation
This is the second quarterly technical report on a program, the goal of which is to achieve high efficiency GaAs solar cells. Analysis was concerned with providing design information for use in experimentally determining optimum solar cell process parameters. The first quarterly report contained the results of those design calculations. Using those results as a guide, experimental work was initiated to determine optimum cell process parameters. The initial results on this phase of the program are reported.
A 4000 hour experiment, conducted in late 1992 through mid 1993, confirmed earlier results on the ultraviolet damage effects in covered solar cells of various types being used, or proposed for use, in INTELSAT programs. Two different UV test systems were used to identify systematic errors and to study the effects of UV source-bulb age on degradation rate. After correction for contamination and UV source-bulb aging, the extrapolated degradation rates for irradiated and unirradiated INTELSAT-5, -6 single AR(SAR) coated cells and INTELSAT-7, -7A, -8 double layer AR(DAR) coated cells in both the 1993 tests confirm the following hypotheses resulting from the 1992 experiment. (a) Irradiated cells display significantly more UV degradation than do the unirradiated cells for tests exceeding 2000 hours. The new data indicates that degradation effects from electron irradiation are proportional to t(exp 2) (the square of the UV hours), at least for times less than or equal to 3000 hours. (b) This difference does not depend upon entire reflective coating, cell resistivity, or manufacturer within the sensitivity and reproducibility of the experiment. (c) There is a clear difference in degradation rate between single AR coated cells (TiO(x)) and double layer AR coated cells (SiO(x) and Al2O3?). At 100,000 hours (11.4 years) the DAR coated cells display more degradation than do the SAR coated cells, even though at 1,000 hours the DAR cells display less degradation. (d) UV degradation rates, to modern covered silicon solar cells, at the beginning of bulb life drop from approximately 2 times the average rate to near zero after 2000 hours (average end-of-life for the xenon short-arc lamps used in the tests). The effects of 1 MeV electron irradiation (10(exp 15) e(-)/sq cm) prior to UV exposure are clearly indicated in the plot of percent change in cell open circuit voltage (Voc) versus percent change in short circuit current (Isc) during the UV test and post-test cleanup of the cells. Clearly, extended UV testing produces a permanent photo-induced redegradation of previously irradiated cells. However, this photo-induced redegradation may be caused by the long-wavelength light, not the UV light.
Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.
This paper summarizes results of several experiments flown on the Long Duration Exposure Facility (LDEF) to examine the effects of the space environment on materials and technologies to be used in solar arrays. The various LDEF experiments are compared to each other as well as to other solar cell flight data published in the literature. Data on environmental effects such as atomic oxygen, ultraviolet light, micrometeoroids and debris, and charged particles are discussed in detail. The results from the LDEF experiments allow us to draw several conclusions. Atomic oxygen erodes unprotected silver interconnects, unprotected Kapton, and polymer cell covers, but certain dielectric coatings can protect both silver and Kapton. Cells that had wrap-around silver contacts sometimes showed erosion at the edges, but more recently developed wrap-through cells are not expected to have these problems. Micrometeoroid and debris damage is limited to the area close to the impact, and microsheet covers provide the cells with some protection. Damage from charged particles was as predicted, and the cell covers provided adequate protection. In general, silicon cells with microsheet covers showed very little degradation, and solar modules showed less than 3 percent degradation, except when mechanically damaged. The solar cell choices for the Space Station solar array are supported by the data from LDEF.
An investigation was conducted to determine the technology readiness of lithium-doped silicon solar cells with respect to use in space programs. A pilot line fabrication program was established, in which the pilot line cells were evaluated after being exposed to environments ordinarily imposed on nonlithium-doped silicon solar cells. Results indicate that further process improvements are required, particularly with respect to the P/N junction diffusion and the electrical contacting technique (including solder coating). It is concluded that lithium-doped cells can be fabricated to exhibit (1) high efficiencies, (2) uniform cell-to-cell recovery characteristics after exposure to 1-MeV electrons; and (3) good stability in most environments investigated (the only exception being the thermal shock environment).
All-inorganic CsPbI 3 perovskite has a near-ideal band gap, high thermal stability, and simple material composition, thus presenting a promising option for developing perovskite/Si tandem solar cells. However, CsPbI 3 undergoes a rapid phase transition under exposure to moisture and exhibits a significant performance gap relative to other perovskite compounds, particularly in the p-i-n structure favored for perovskite/Si tandems. In this work, we demonstrate highly efficient and stable p-i-n-structured CsPbI 3 perovskite solar cells by surface engineering the CsPbI 3 layer with oxidized Ti 3 C 2 T x MXene (OMXene) nanoplates via spray coatings. OMXene provides a physical barrier against moisture and improves charge separation at the perovskite-electron transporting layer interface via an enhanced electric field. Consequently, we demonstrated CsPbI 3 /OMXene-based p-i-n devices with efficiencies of 19.69% for 0.096-cm 2 cells and 14.64% for 25-cm 2 minimodules. The encapsulated minimodule showed good stability, retaining ~85% of the initial efficiency under simultaneous damp heat (85°C/85% relative humidity) and 1-sun light soaking for over 1,000 h.
Precious and scarce silver (Ag) is used as a front electrical contact in silicon solar panels. With massive amounts of solar panel waste coming to end-of-life, it is imperative to recover all the Ag from these modules. In this paper, we propose a novel method to easily reclaim Ag from end-of-life silicon solar cells using low concentration sulfuric acid (H 2 SO 4 ) leaching followed by ultrasonication. Our process simplifies the Ag recycling procedure by directly recovering the Ag contacts from solar cells, eliminating the need for secondary precipitation/electrodeposition. First, scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) was used to study the leaching and ultrasonication process on rejected solar wafers. Next, a solar panel from landfill was heated in a furnace to burn off the polymer encapsulant. The silicon wafers were then collected from the burning process and leached in 2 M H 2 SO 4 at two different shaking speeds for 48 hours at room temperature. Finally, the end-of-life silicon wafer pieces were collected, sonicated in water, and then the sonication water was centrifuged to show a proof-of-concept to recover the Ag contacts. Inductively coupled plasma optical emission spectroscopy (ICPOES) is used to monitor dissolved elements in the leachate as a function of time and shaking speed. XPS is used to evaluate the composition of the silicon cell wafer surface before and after H 2 SO 4 leaching. SEM is used to image the recovered Ag contacts morphology and EDX confirms the recovered particles contain high amounts of Ag. Furthermore, a proposed schematic illustrates the authors’ hypothesis for the peeling mechanism.
The Power Extension Package (PEP) is the prime focus of a development program to produce low cost solar cells. The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell cost will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. This paper describes a unique radiation damage test and side-by-side comparison of candidate cell types with pre-and post-irradiation airplane calibration of outer space short-circuit current.
We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30 µm/h. The V OC of 1.05 V is comparable to the V OC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.
A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.
A set of experiments is described in which the arcing of negatively biased solar cells is examined and characterized in terms of the primary factors that cause such behavior. The experiments are conducted in an ultrahigh vacuum chamber, and an image-intensified CCD camera is employed to monitor UV emission from arc events at the interfacial edge between the cover slip and the solar cell. A bead of encapsulant along the interfacial edge is noted which can be removed to reduce arc frequency, and water contamination is found to further enhance arcing. Frequency of arcing is found to vary indirectly with temperature and directly with exposure to H2O, but no other significant correlations are noted. The sensitivity to H2O vapor is eliminated by simply removing the adhesive/encapsulant, and the corresponding arc-rate performance is low.
Radiation damage effects on power efficiency of solar cell composite assemblies