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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Single event upset susceptibility testing of the Xilinx Virtex II FPGA

Heavy ion testing of the Xilinx Virtex IZ was conducted on the configuration, block RAM and user flip flop cells to determine their single event upset susceptibility using LETs of 1.2 to 60 MeVcm^2/mg. A software program specifically designed to count errors in the FPGA is used to reveal L1/e values and single-event-functional interrupt failures.

FPGA Xilinx Virtex static test single event upset↗
NASA NTRS2000

Angular dependence of DRAM upset susceptibility

Heavy ion irradiations of two types of commercial DRAMs reveal unexpected angular responses. One device's cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect.

DRAM angle SEU multiple bit upset DRAM upsets↗
NASA NTRS1998

64Mb COTS DRAMs: A Variety of SEE Responses

Advanced commercial DRAMs are particularly attractive to designers for space applications needing large memory arrays due to resulting savings in mass, volume, and power.

(MCMs)↗
NASA NTRS1997

TOPEX/Poseidon Radiation Issues: Displacement Damage in Optocouplers

In this paper we describe observed failures of optocouplers on the TOPEX/Poseidon (T/P) ocean measuring satellite. An indirect assessment is made of proton doses by the spacecraft, and these data are compared with laboratory proton irradiations of optocouplers. It is shown that the T/P failures occur at expected doses for proton-induced displacement damage.

optocouplers TOPEX Poseidon↗
NASA NTRS1997

Investigations into the Power MOSFET SEGR Phenomenon and its Physical Mechanism

The state of understanding of the destructive SEGR event in power MOSFETs is relatively mature with large published efforts, both experimental and theoretical. However, gasps remain in the uderstanding of the phenomenon, including unexplained anomalies, emperical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effets.

MOSFET SEGR↗