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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Tuning discharge voltage by Schottky electron barrier in P2-Na 2/3 Mg 0.205 Ni 0.1 Fe 0.05 Mn 0.645 O 2

Recently, Mg doped Na metal oxide layered cathode compounds have attracted strong interest for Na-ion battery applications. We report a new type of asymmetric phase evolution between charge and discharge is found to show much-enhanced discharge voltage in P2-Na 2/3 Mg 0.205 Ni 0.1 Fe 0.05 Mn 0.645 O 2 over the parent cathode compound. P2 solid solution is found to show an abnormal coexistence with O2-P2 two-phase reaction during discharge with simultaneous reduction of O, Ni, and Fe redoxes, distinct from the conventional P2-O2 two-phase reaction in the charge. Our analysis suggests that the P2 and O2 two-phase boundary forms a novel unidirectional Schottky barrier to impede electron and Na diffusions in discharge only, thus making the kinetically preferred P2 solid solution phase abnormally coexist with the two-phase region for high discharge voltage and low polarization. Our work demonstrates tuning dynamic evolution of electronic Schottky barrier as a new dimension for advanced kinetic design of high-performance battery cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2017

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100)

The influence of the degree of misorientation and treatment of a GaAs substrate on the structural and optical characteristics of homoepitaxial GaAs/GaAs(100) structures grown by metal–organic chemicalvapor deposition is studied. From the data obtained by a series of structural and spectroscopic techniques, it is shown that the degree of deviation of the substrate from the exact orientation towards the [110] direction by an angle of up to 4° brings about stepwise growth of the GaAs film in the initial stage and a further increase in the degree of misorienration towards the [110] direction to 10° results in an increase in the number of structural defects in the epitaxial film. At the same time, the samples of homoepitaxial structures grown by metal–organic chemical-vapor deposition on GaAs(100) substrates misoriented by 4° towards the [110] direction possess the highest photoluminescence efficiency; it is ~15% higher than the corresponding quantity for structures grown on precisely oriented GaAs(100) substrates. Preliminary polishing of the GaAs substrate (removal of an oxide layer) also yields the intensification of photoluminescence emission compared to emission in the case of an unpolished substrate of the same type. For samples grown on substrates misoriented by 4°, such an increase in the photoluminescence efficiency is ~30%.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Revealing EDL-driven reduction mechanisms in binary, ternary, and quaternary fluorinated electrolytes via an integrated MD–DFT–ML framework

Accurately predicting solid electrolyte interphase (SEI) formation requires explicitly resolving the electric double layer (EDL) structure, which deviates significantly from that of the bulk electrolyte. Although an established molecular dynamics (MD) and Density Functional Theory (DFT) framework can model SEI formation by evaluating reduction reactions of local clusters in the EDL, it suffers from a combinatorial computational bottleneck. To overcome this limitation, we introduce a machine-learning-accelerated simulation workflow (MD–DFT–ML), integrating a gradient-boosted regression model trained on EDL composition data to efficiently predict reduction potentials. We apply this framework to seven fluorinated electrolytes comprising fluorinated anions, a fluorinated ester solvent, two types of diluent (ion-solvating ester vs. non-solvating ether), and an FEC additive. The analysis shows that the EDL selectively accumulates cation-binding species; consequently, the non–cation-binding ether diluent rarely enters the EDL and makes minimal contributions to SEI formation. DFT calculations on statistically representative EDL clusters provide reduction potentials and fluorine-release pathways, while the ML model, which substantially reduces the DFT workload, predicts cluster reduction energies with a mean absolute error of 0.1 eV. The combined MD–DFT–ML approach also quantifies contributions from different sources to LiF formation in the SEI. This methodology establishes a generalizable route for multiscale modeling electrolyte and interphase design for next-generation electrochemical energy-storage systems.

DFT-MD-ML workflow↗
DOE OSTI2022

3D structures and methods therefor

Aspects of the disclosure are directed to methods and/or apparatuses involving one or more of a conductive polymer, deposition of a conductive polymer and 3D (three-dimensional) printing of a continuous bead of material. As may be implemented in accordance with one or more embodiments characterized herein, a 3D structure is formed as follows. A stacked layer is formed by depositing a continuous bead of material along an uninterrupted path that defines a first layer of the 3D structure. A sidewall of the 3D structure is formed with opposing surfaces respectively defined by successive stacked layers of the 3D structure by, for each stacked layer (including the first layer), depositing the continuous bead of material along the path and with a surface thereof in contact with a surface of the continuous bead of material of an adjacent one of the stacked layers.

Nellis, Gregory↗
DOE OSTI2018

High‐Performance Semitransparent Ternary Organic Solar Cells

Abstract Semitransparent organic solar cells (STOSCs) are ideal candidates for building‐integrated photovoltaics. Power conversion efficiency (PCE) is one of the most important parameters of STOSCs, which is typically limited by the intrinsic narrow absorption of thin active layer. Ternary structure is demonstrated as an efficient approach to broaden the light absorption and manipulate the morphology, thus leading to improved PCEs by introducing a third component into the binary system. However, STOSCs based on ternary systems are rarely studied. In this contribution, semitransparent ternary solar cells are fabricated using a wide‐bandgap ( E g = 2.10 eV) polymer donor, PBT1‐S, as the third component. It is found that the addition of a small amount of PBT1‐S to PTB7‐Th:PC 71 BM blend has a negligible influence on its average visible transmittance (AVT) and color perception. A PCE of 9.2% is achieved for the champion ternary device with 20% AVT, which is one of the highest values for STOSCs. The results indicate that ternary structure is a promising approach for the fabrication of high‐performance STOSCs.

Xie, Yuanpeng↗
DOE OSTI2024

Stoichiometry–Induced Ferromagnetism in Altermagnetic Candidate MnTe

The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (T N ≈ 310 K) and semiconducting properties. The results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films are presented. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first-principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE-grown samples. Further, when combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites is increased locally by orders of magnitude. Here, local acceptor and donor doping in Er(Mn,Ti)O3 is demonstrated, facilitated by the controlled splitting of anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, it is shown that the oxygen defects can readily be moved through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. These findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

He, Jiali↗
DOE OSTI2019

Dopant-Dependent Stability of Garnet Solid Electrolyte Interfaces with Lithium Metal

Li 7 La 3 Zr 2 O 12 (LLZO) garnet-based materials doped with Al, Nb or Ta to stabilize the Li + -conductive cubic phase are a particularly promising class of solid electrolytes for all-solid-state lithium metal batteries. Understanding of the intrinsic reactivity between solid electrolytes and relevant electrode materials is crucial to developing high voltage solid-state batteries with long lifetimes. Using a novel, surface science-based approach to characterize the intrinsic reactivity of the Li-solid electrolyte interface, we determine that, surprisingly, some degree of Zr reduction takes place for all three dopant types, with the extent of reduction increasing as Ta < Nb < Al. Significant reduction of Nb also takes place for Nb-doped LLZO, with electrochemical impedance spectroscopy (EIS) of Li||Nb-LLZO||Li symmetric cells further revealing significant increases in impedance with time and suggesting that the Nb reduction propagates into the bulk. Density functional theory (DFT) calculations reveal that Nb-doped material shows a strong preference for Nb dopants towards the interface between LLZO and Li, while Ta does not exhibit a similar preference. Furthermore EIS and DFT results, coupled with the observed reduction of Zr at the interface, are consistent with the formation of an “oxygen-deficient interphase” (ODI) layer whose structure determines the stability of the LLZO-Li interface.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Room–Temperature Insulating Ferromagnetic (Ni,Co) 1+2 x Ti 1– x O 3 Thin Films

Insulating uniaxial room–temperature ferromagnets are a prerequisite for commonplace spin wave–based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. It is shown that the uniaxial A 1 + 2x Ti 4+ 1 – x O 3 (ATO), A = Ni 2+ ,Co 2+ , and 0.6 < x ≤ 1, thin films are electrically insulating ferromagnets already at room temperature. Here, the octahedra network of the ATO and the corundum and ilmenite structures are the same yet different octahedra–filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to x = 1, or vacated (–0.24 < x < 0) in the ATO structure. TiO–layers, which separate the ferromagnetic (Ni,Co)O–layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO 3 and CoTiO 3 ilmenites, can continuously be replaced by (Ni,Co)O–layers to convert the ATO–films to ferromagnetic insulator with abundant direct cation interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Origin of Electrochemical Activation Leading to Enhanced Cycling Stability of Li‐ and Mn‐Rich Cathodes

Electrochemical activation is a critical step for optimal functioning of Li- and Mn-rich (LMR) cathodes, yet the underlying mechanism for such activation remains elusive. Here, by using scanning/transmission electron microscopy (S/TEM) combined with the associated energy-dispersive x-ray spectroscopy (EDS) and electron energy-loss spectroscopy (EELS), we decipher the origin of the activation enhanced electrochemical properties. We reveal that activation induces the formation of a spinel-like phase within the C2/m domains of the LMR cathode, where the transition-metal ions partially occupy both the tetrahedral (8a) and octahedral (16c) sites of the $Fd\bar{3}m$ spinel lattice, distinguishing the spinel-like phase from the conventional high-voltage spinel. Systematic varying the cycling voltage reveals a critical activation voltage above which this spinel-like phase forms, while lower voltages preserve the layered bulk structure. As the spinel-like phase is a stable structure for electrochemical cycling, the present findings provide direct mechanistic insight into the voltage-dependent activation process and explain how the C2/m to spinel-like transformation upon activation contributes to the electrochemical performance of LMR cathodes, providing guidance for the rational design of Li-rich cathodes with enhanced cycling durability.

Li-rich and Mn-rich cathode↗
DOE OSTI2024

TiN‐Au/HfO 2 ‐Au Multilayer Thin Films with Tunable Hyperbolic Optical Response

Abstract Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self‐assembled HfO 2 ‐Au/TiN‐Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO 2 and TiN layers forming the alternative layers of HfO 2 ‐Au VAN and TiN‐Au VAN. The HfO 2 and TiN layer thickness is carefully controlled by varying laser pulses during pulsed laser deposition (PLD). Interestingly, tunable anisotropic physical properties can be achieved by adjusting the bi‐layer thickness and the number of the bi‐layers. Type II optical hyperbolic dispersion can be obtained from high layer thickness structure (e.g., 20 nm), while it can be transformed into Type I optical hyperbolic dispersion by reducing the thickness to a proper value (e.g., 4 nm). This new nanoscale hybrid metamaterial structure with the three‐phase VAN design shows great potential for tailorable optical components in future integrated devices.

Chemistry↗
DOE OSTI2019

Planar optical waveguide for refractive index determining with high sensitivity and dual-band characteristic for Nano-sensor application

In this paper, we develop an optical waveguide based on metal–insulator-metal as a refractive index sensor with dual-band feature and a high figure of merit (FOM) and sensitivity. In this model, we utilize a Z-shape slot based on two stubs model in both metal layers and this structure is placed over a dielectric layer of SiO{sub 2} as a substrate for planar application in the optical systems. In addition, the parametric studies are used to clarifying the elements influence on controlling the transmission and working frequency to achieve a dual-band characteristic at 1550 and 3100 nm which is suitable for optical fiber application. In fact, the compound stubs technique is suggested to modify the resonances of the waveguide for dual-band attributes based on the transmission line model. We simulate this waveguide using the Finite Integrated Technique (FIT) method. It is supposed that the waveguide is filled by various materials with the different refractive indexes in the range of 1 to 1.5. We obtain the FOM for these materials while the Fano response provides high FOM about the 3800 RIU{sup −1} and the sensitivity is 1790 nm/RIU. Therefore, the compound stubs strategy help to improve the FOM factor in the optical waveguide.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Characterization and recovery of rare earth elements and other critical metals (Co, Cr, Li, Mn, Sr, and V) from the calcination products of a coal refuse sample

Here, the impacts of calcination on the leaching recovery of rare earth elements (REEs) and other critical metals from a Baker seam coal refuse material were investigated. Acid leaching test results showed that leaching recovery of the REEs, especially the light REEs, was increased significantly from around 24% to 80–90% after calcination under 600–750 °C for two hours. By considering the major element leaching kinetics and the mineralogical changes of the dominant minerals caused by calcination, two mechanisms were proposed for the improved leaching performance: (1) decomposition of difficult-to-dissolve REE-bearing minerals into soluble forms; and (2) liberation of REE-bearing minerals encapsulated in clays after calcination due to the dehydration and disintegration of the layered clay structure. Sequential chemical extraction tests showed that a significant fraction (around 75%) of the REEs in the raw material were present in an insoluble form. After calcination under proper temperatures (600–800 °C), the majority of the insoluble light REEs (LREEs) were converted into soluble forms. Changes in the modes of occurrence of the LREEs and phosphorous based on leaching rate and sequential leaching correlated well as a function of the calcination temperature. This finding in addition to SEM-EDX results tends to indicate the potential that the LREEs occur primarily as rare earth phosphates such as monazite in the untreated coal refuse material. The acid leaching and sequential chemical extraction results show that co-extraction of REEs and other critical metals such as Co, Mn, and Li is possible using a calcination-acid leaching procedure.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2019

High-Performance Thermoelectrics from Cellular Nanostructured Sb 2 Si 2 Te 6

We introduce Sb 2 Si 2 Te 6 as a high-performance thermoelectric material. Single-crystal X-ray diffraction analysis indicates that Sb 2 Si 2 Te 6 has a layered twodimensional structure with Sb 3+ cations and [Si 2 Te 6 ] 6- units as building blocks adopting the Fe 2 P 2 Se 6 structure type. Sb 2 Si 2 Te 6 is a direct-band-gap semiconductor with valence-band maximum and conduction-band minimum at the Z point in the Brillouin zone, where the band is doubly degenerate. Polycrystalline bulk pellets of Sb 2 Si 2 Te 6 with randomly packed grains exhibit an intrinsically high thermoelectric figure of merit ZT of ~1.08 at 823 K. We then create a cellular nanostructure with ultrathin Si 2 Te 3 nanosheets covering the Sb 2 Si 2 Te 6 grains, which act as a hole-transmitting electron-blocking filter and at the same time cause extra phonon scattering. Lastly, this dual function of the cellular nanostructure achieves an ultralow thermal conductivity value of ~0.29 Wm -1 K -1 and a high ZT value of ~1.65 at 823 K for Sb 2 Si 2 Te 6 , along with a high average ZT value of ~0.98.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗