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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Energy band line-up of atomic layer deposited Al{sub 2}O{sub 3} on β-Ga{sub 2}O{sub 3}

Electrical properties of atomic layer deposited Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface were investigated. We determined the conduction band offset and interface charge density of Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface by analyzing the capacitance-voltage characteristics. The conduction band offset at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface was found to be 1.7 eV. A large positive sheet charge density of 3.6 × 10{sup 12} cm{sup −2} is induced at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface, which caused a non-zero field of 0.7 MV/cm in the Al{sub 2}O{sub 3} under flat-band conditions in the β-Ga{sub 2}O{sub 3}. The forward current-voltage characteristics were found to be related to trap-assisted tunneling.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9 × 10{sup 11 }cm{sup −2 }eV{sup −1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

A high-throughput and data-driven computational framework for novel quantum materials

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDs), possess an intrinsic van der Waals gap at the layer interface, allowing for remarkable tunability of the optoelectronic features via external intercalation of foreign guests such as atoms, ions, or molecules. Herein, we introduce a high-throughput, data-driven computational framework for the design of novel quantum materials derived from intercalating planar conjugated organic molecules into bilayer transition metal dichalcogenides and dioxides. By combining first-principles methods, material informatics, and machine learning, we characterize the energetic and mechanical stability of this new class of materials and identify the fifty (50) most stable hybrid materials from a vast configurational space comprising ∼105 materials, employing intercalation energy as the screening criterion.

Kastuar, Srihari M. (ORCID:0000000279001561)↗
DOE OSTI2017

Atomic configuration and charge state of hydrogen at dislocations in silicon

The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm{sup –1} was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H{sup 0} at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interface Nucleus Templating of Modular Intermetallic Morphologies: Chemical Pressure Complementarity, Columnar Domains, and Complex Disorder in Y 13 Ag 42.7 Zn 29.7

One element of the diversity of intermetallic phases is the formation of complex structures from the assembly of fragments of simpler structures. Recently, we devised the Interface Nuclear Approach as a model for understanding such modular arrangements, in which the intergrowth of different structures is driven by chemical pressure (CP) relief at shared motifs at the domain interfaces, referred to as interface nuclei. In this Article, we present the synthesis, crystal structure, and CP analysis of a new compound that expands on this theme, Y 13 Ag 42.7 Zn 29.7 . Its hexagonal structure contains interpenetrating domains based on the CaPd 5+x and EuMg 5 types. The CaPd 5+x -based regions are reminiscent of the lamellar intergrowth structures previously observed in the Y−Ag−Zn system. In Y 13 Ag 42.7 Zn 29.7 , however, the domains have a different morphology, forming columns that adopt a hexagonal rod-packing. The geometrical features of the remaining spaces are assigned, using the program GrowDomain, to the cores of trigonal units of the EuMg 5 type, while layers of disordered atoms occur at heights along z where the parent structures are mismatched. At the CaPd 5+x -type/EuMg 5 -type interfaces, simple interface nucleus motifs with strong CP-complementarity can be identified, while their distribution within the parent structures supports the notion of templated architectures in modular intermetallics.

Chemical structure↗
DOE OSTI2017

In-situ probing of coupled atomic restructuring and metallicity of oxide heterointerfaces induced by polar adsorbates

Microscopic understanding of the surface-controlled conductivity of the two dimensional electron gas at complex oxide interfaces is crucial for developing functional interfaces. We observe conductivity and structural modification using in-situ synchrotron surface x-ray diffraction as the surface of a model LaAlO 3 /SrTiO 3 (001) heterostructure is changed by polar adsorbates. We find that polar adsorbate-induced interfacial metallicity reduces polar distortions in the LaAlO 3 layer. First-principles density functional theory calculations show that surface dipoles introduced by polar adsorbates lead to additional charge transfer and the reduction of polar displacements in the LaAlO 3 layer, consistent with the experimental observations. Our study supports that internal structural deformations controlling functionalities can be driven without the application of direct electrical or thermal bias and offers a route to tuning interfacial properties. Furthermore, these results also highlight the important role of in-situ x-ray scattering with atomic resolution in capturing and exploring structural distortions and charge density changes caused by external perturbations such as chemical adsorption, redox reaction, and generation and/or annihilation of surface defects.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Magnetic behaviors in melt spun Fe{sub 52−x}Mn{sub 23+x}Ga{sub 25} (x = 0–3) ribbons

The effect of volume fraction of B2-type ferromagnetic (FM) phase on magnetic behavior of melt-spun Fe{sub 52−x}Mn{sub 23+x}Ga{sub 25} (x = 0, 1, 2, and 3) ribbons has been investigated. X-ray diffraction (XRD) results show that the volume fraction of the B2 phase is decreased, accompanied by the increased antiferromagnetic (AFM) fcc phase, with increasing x. The magnetization isotherms of these ribbons at different temperatures demonstrate that there exists a critical field H{sub CR} from AFM to FM state, and the H{sub CR} decreases and vanishes finally with increasing temperature. High exchange bias field (H{sub EB}) at 10 K through a cooling field at H{sub CR} from 300 K could be found and correlated to the volume fraction of B2-type FM phase. Both H{sub CR} and H{sub EB} are increased with decreasing the amount of B2-type FM phase. The H{sub CR} is increased from 20 kOe for x = 0 to 50 kOe for x = 3, and H{sub EB} is increased from 0.9 kOe for x = 0 to 2.5 kOe for x = 2. The latter phenomenon might be attributed to the change of exchange interactions at FM/AFM interfaces due to the change of proportion of FM and AFM phase at low temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain-modulated antiferromagnetic spin orientation and exchange coupling in Fe/CoO(001)

The effect of CoO spin orientation on exchange coupling was investigated in single-crystalline Fe/CoO/MnO/MgO(001) systems. An antiferromagnetic CoO spin reorientation transition from the in-plane direction to the out-of-plane direction was found to be associated with the in-plane strain transition in CoO film from compression to expansion. The induced uniaxial anisotropies by exchange coupling at the Fe/CoO interface are significantly stronger for the in-plane CoO spin orientation than for the out-of-plane CoO spin orientation. Our study provides a way to modify the exchange coupling in the ferromagnetic (FM)/antiferromagnetic (AFM) bilayer by modulating the strain in the AFM film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Size-Dependent Energy and Adhesion of Pd Nanoparticles on Graphene on Ni(111) by Pd Vapor Adsorption Calorimetry

Carbon-supported late transition-metal nanoparticles are promising catalysts and electrocatalysts for wide-ranging applications. However, experimental investigations of the bonding energetics of metal nanoparticles on carbon supports are very limited. Here, in this work, we report heats of adsorption of Pd vapor deposited onto single-layer graphene(0001) supported on Ni(111) at 100 and 300 K as Pd grows particles of well-defined size in the range from three atom clusters to 6 nm diameter. Sizes were determined from He + low-energy ion scattering (LEIS). In this size range, the differential heat of Pd adsorption increases from 228 kJ/mol to within 10 kJ/mol of the heat of sublimation of bulk Pd (377 kJ/mol). The chemical potential of metal atoms in these nanoparticles as a function of average particle size was determined from these results. The adhesion energy at the Pd/graphene(0001)/Ni(111) interface was extracted from these data and found to be 3.5 J/m 2 for the largest Pd particles. For the three metal elements that have now been studied (Pd, Ni, and Ag), we found an increase in metal/graphene(0001)/Ni(111) adhesion energy with metal carbophilicity, which we defined here as the heat of C atom adsorption on that metal’s (111) surface estimated from published density functional theory calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

On the high-temperature stability of the Al 8 Cu 3 Ce intermetallic in an additively manufactured Al-Cu-Ce-Zr alloy

High-temperature resistant eutectic Al alloys are crucial materials for lightweight and energy efficient design in the automotive and aviation industries. Additive manufacturing offers a pathway to refine eutectic microstructures and develop novel alloys with superior high-temperature strength. High-volume fraction intermetallic Al-Cu-Ce alloys have been developed to deliver high-temperature strength in combination with reduced hot-tearing susceptibility. Zr is added to provide additional strengthening via nanoscale Al 3 Zr precipitation, and to stabilize and avoid coarsening of the Al 8 Cu 3 Ce phase. However, the detailed interaction between Zr and Al 8 Cu 3 Ce remains unexplored. In this work, we show with synchrotron X-ray diffraction that laser powder bed fusion fabricated Al-Cu-Ce and Al-Cu-Ce-Zr alloys contain predominantly the Al 8 Cu 3 Ce intermetallic in the as-fabricated condition. Heat treatment of the Al-Cu-Ce alloy results in the Al 8 Cu 3 Ce → Al 8 Cu 4 Ce phase transformation. In the Al-Cu-Ce-Zr alloy, minor fractions of (Al,Cu,Si) 4 Ce and Al 2 Cu-θ are found in the as-fabricated condition, while Al 8 Cu 3 Ce remains stable during heat treatment. Atom probe microscopy quantifies intermetallic stoichiometries and reveals how Zr is enriched at the Al-matrix/Al 8 Cu 3 Ce interface acting as a diffusion barrier against solute exchange. Calibrated thermodynamic modeling underpins this as a kinetic effect. Here, a qualitative microstructural model summarizes, how Zr stabilizes Al 8 Cu 3 Ce against phase transformations and coarsening.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Direct observation of MgO formation at cathode electrolyte interface of a spinel MgCo 2 O 4 cathode upon electrochemical Mg removal and insertion

Identifying a Mg 2+ insertion mechanism into Mg cathode is one crucial challenge of designing Mg batteries that own comparable specific energy to the lithium ion systems. Spinel Mg cathodes are attractive candidates mainly attributed to its high intercalation voltage and theoretical capacity, however, electrochemically removing Mg from its solid structure with identified capacity dedicated to actual reversible Mg intercalation introduce complications. Work presented here applies Scanning/Transmission Electron Microscopy with Energy Loss Spectroscopy and diffraction method to investigate the cathode electrolyte interface for a spinel MgCo 2 O 4 material electrochemically cycled in the presence of a non-aqueous, low water content Mg electrolyte. Findings at an atomic scale suggest a complete de-magnesiation is occurring for thin MgCo 2 O 4 particles upon electrochemical charging, but a vast majority of MgCo 2 O 4 shows formation of an amorphous MgO layer with a thickness of similar to ~10 nm at the cathode electrolyte interface. The amorphous MgO layer is directly jointed with the crystalline MgCo 2 O 4 at the outer edge of the cathode. Formation of MgO at the cathode electrolyte interface is believed to be the detrimental factor preventing further electrochemical cell cycling of MgCo 2 O 4 . A possible reaction pathway of intercalation-initiated surface conversion is proposed to explain reversible Mg insertion with MgCo 2 O 4 .

25 ENERGY STORAGE↗
DOE OSTI2025

Machine learning-enabled multiscale modeling of mechanical deformation of aluminum and Al-SiC nanocomposites

A machine learning-enabled multiscale framework is developed for modeling the mechanical response of both pure metal and nanoparticle-reinforced metal matrix nanocomposites (MMNCs). Using aluminum–silicon carbide (Al-SiC) as an example MMNC, atomistic simulations reveal three distinct deformation mechanisms (i.e., defect-free, dislocation-based, and interface separation) governed by the interfaces between the Al matrix and SiC nanoparticles. As compared with single crystal Al, the lattice undergoes a more abrupt failure once the dislocation network becomes extensive and void nucleation initiates, whereas in Al-SiC, nanoparticle interfaces enable a more gradual progression of damage. These mechanisms are captured through a combined classification-regression neural network surrogate model that bridges atomic-scale insights with continuum-scale finite element analysis. Machine learning-enabled multiscale modeling of pure Al accurately predicted strain localization and confirmed by in-situ scanning electron microscopic tensile testing on perforated Al specimens. This study underscores the promise of integrating physics-informed machine learning with hierarchical modeling to capture the interface dominated phenomena and guide the design of advanced MMNCs.

Al-SiC↗
DOE OSTI2019

Assessing Pair Interaction Potentials of Nanoparticles on Liquid Interfaces

The pair interaction potentials of polymer-grafted silica nanoparticles (NPs) at liquid surfaces were confirmed by scanning electron microscopy, exploiting the nonvolatility of ionic liquids to stabilize the specimens against microscope vacuum. Even at near contact, individual, two-dimensionally well-dispersed NPs were resolved. The potential of mean force, reduced to the pair interaction potential for dilute NPs, was extracted with good accuracy from the radial distribution function, as both NP diameter and grafted polymer chain length were varied. Although NP polydispersity somewhat broadened the core repulsion, the pair potential well-approximated a hard sphere interaction, making these systems suitable for model studies of interfacially bound NPs. For short (5 kDa) poly(ethylene glycol) ligands, a weak (< k B T ) long-range attraction was discerned, and for ligands of identical length, pair potentials overlapped for NPs of different diameter; the attraction is predicted to arise from ligand-induced menisci. To understand better the interactions underlying the pair potential, NP surface-binding energies were measured by interfacial tensiometry, and NP contact angles were analyzed by atomic force microscopy and transmission electron microscopy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Building workflows for an interactive human-in-the-loop automated experiment (hAE) in STEM-EELS

Exploring the structural, chemical, and physical properties of matter on the nano- and atomic scales has become possible with the recent advances in aberration-corrected electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM). However, the current paradigm of STEM-EELS relies on the classical rectangular grid sampling, in which all surface regions are assumed to be of equal a priori interest. However, this is typically not the case for real-world scenarios, where phenomena of interest are concentrated in a small number of spatial locations, such as interfaces, structural and topological defects, and multi-phase inclusions. One of the foundational problems is the discovery of nanometer- or atomic-scale structures having specific signatures in EELS spectra. Herein, we systematically explore the hyperparameters controlling deep kernel learning (DKL) discovery workflows for STEM-EELS and identify the role of the local structural descriptors and acquisition functions in experiment progression. In agreement with the actual experiment, we observe that for certain parameter combinations the experiment path can be trapped in the local minima. We demonstrate the approaches for monitoring the automated experiment in the real and feature space of the system and knowledge acquisition of the DKL model. Based on these, we construct intervention strategies defining the human-in-the-loop automated experiment (hAE). This approach can be further extended to other techniques including 4D STEM and other forms of spectroscopic imaging. The hAE library is available on Github at https://github.com/utkarshp1161/hAE/tree/main/hAE.

Pratiush, Utkarsh [Univ. of Tennessee, Knoxville, ↗
DOE OSTI2018

Role of A Cation Vacancy in the Exchange-Biased LaFeO{sub 3} Multiferroic Nanocrystals

Multiferroic samples with the chemical formula La{sub 1−x}◻{sub x}FeO{sub 3} (0.0 ≤ x ≤ 0.03) were successfully prepared in nanoscale by citrate nitrate combustion method. XRD data reveals crystallized single-phase orthorhombic symmetry for the prepared nanopowder. All measured magnetic parameters point to the antiferromagnetic character with weak ferromagnetic moment. The value of the molar magnetic susceptibility (χ{sub M}) for La{sub 0.99}◻{sub 0.01}FeO{sub 3} reaches 3.5 times that of the undoped sample. The saturation magnetization of the samples La{sub 0.99}◻{sub 0.01}FeO{sub 3} and La{sub 0.97}◻{sub 0.03}FeO{sub 3} increased two times as compared with that of the parent one. The exchange bias (EB) effect was observed for 1{sup st} time at room temperature and originated from antiferromagnetic–ferromagnetic (AFM-FM) interface effect. Ferroelectric hysteresis loop was observed at room temperature for the samples which highlighted the presence of the ferroelectric ordering. A huge enhancement in the saturation (P{sub s}), the remnant polarization (P{sub r}), and the coercive electric field (E{sub c}) of the sample La{sub 0.98}◻{sub 0.02}FeO{sub 3} by 7.5, 24, and 12 times, respectively, when compared with the parent sample LaFeO{sub 3}. Based on the obtained results, the investigated samples are categorized in type I multiferroics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Biased interface between solid ion conductor LiBH{sub 4} and lithium metal: A first principles molecular dynamics study

We use first-principles molecular dynamics to study the electrochemical solid-solid interface between lithium metal and lithium electrolyte LiBH{sub 4}. An external bias is applied by using an effective screening medium. We observe large polarization in the LiBH{sub 4}, because the lithium cations in LiBH{sub 4} are shifted more on one side of the double-well potential of Li{sup +}. This results in a large potential drop in the interface region and a large double-layer capacity corresponding to ca. 70 μF/cm{sup 2}. H-coordination to the Li atoms plays an important role in the charge-transfer reaction and ion transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Atomic layer deposition TiO 2 -Al 2 O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

This research focuses on the benefits and properties of TiO 2 -Al 2 O 3 nano-stack thin films deposited on Ga 2 O 3 /GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2 , 7.1 nm Al 2 O 3 and 2 nm Ga 2 O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2 -Al 2 O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2 O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2 . The gate leakage current density (J=2.81× 10 -8 A/cm 2 ) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2 /Al 2 O 3 for serving as the gate oxide on Ga 2 O 3 /GaN based MOS devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗