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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,567 records · Page 87
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Constructing stable interface layer for boosting high-voltage cycling performance of single-crystal Ni-rich cathodes

Increasing demand for electric vehicles (EVs) worldwide and the requirements for environmental protection have greatly promoted the development of low-Co, Ni-rich layered cathodes due to their high energy density, reasonable cost, and less environmental pollution. Nevertheless, serious performance degradation and safety concerns resulting from structural/interfacial instability under high operating voltages (≥4.3 V) have greatly hindered its commercialization. Herein, we propose a feasible surface modification strategy by introducing a multifunctional Li 2 SiO 3 (LSO) coating layer onto the surface of Co less single-crystalline LiNi 0.63 Co 0.07 Mn 0.3 O 2 (NCM) to solve the above challenges. Additionally, the uniform Li 2 SiO 3 coating layer has a unique three-dimensional (3D) ion diffusion channel, which greatly promotes the transmission of Li + and alleviates interfacial stress accumulation. Equally important, the electrochemically inert Li 2 SiO 3 coating layer has a stable structure framework with strong Si-O bonds, which inhibit anisotropic particle volume expansion and the occurrence of side reactions during long-term cycling. As a consequence, LSO modified NCM exhibits greatly improved electrochemical properties even at harsh testing conditions and achieves capacity retention of 79.1% after 200 cycles at 25°C within 2.95-4.5 V in half cells. Furthermore, it provides an outstanding capacity retention of 94.7% after 300 cycles at 25°C within 2.95-4.4 V when tested in pouch full cells.

25 ENERGY STORAGE↗
NASA NTRS1992

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.↗
NASA NTRS2000

Electronics Demonstrated for Low- Temperature Operation

The operation of electronic systems at cryogenic temperatures is anticipated for many NASA spacecraft, such as planetary explorers and deep space probes. For example, an unheated interplanetary probe launched to explore the rings of Saturn would experience an average temperature near Saturn of about 183 C. Electronics capable of low-temperature operation in the harsh deep space environment also would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. An ongoing research and development program on low-temperature electronics at the NASA Glenn Research Center at Lewis Field is focusing on the design of efficient power systems that can survive and exploit the advantages of low-temperature environments. The targeted systems, which are mission driven, include converters, inverters, controls, digital circuits, and special-purpose circuits. Initial development efforts successfully demonstrated the low-temperature operation and cold-restart of several direct-current/direct-current (dc/dc) converters based on different types of circuit design, some with superconducting inductors. The table lists some of these dc/dc converters with their properties, and the photograph shows a high-voltage, high-power dc/dc converter designed for an ion propulsion system for low-temperature operation. The development efforts of advanced electronic systems and the supporting technologies for low-temperature operation are being carried out in-house and through collaboration with other Government agencies, industry, and academia. The Low Temperature Electronics Program supports missions and development programs at NASA s Jet Propulsion Laboratory and Goddard Space Flight Center. The developed technologies will be transferred to commercial end users for applications such as satellite infrared sensors and medical diagnostic equipment.

Patterson, Richard L.↗
NASA NTRS1994

Mechanisms of anode power deposition in a low pressure free burning arc

Anode power deposition is a dominant power loss mechanism for arc jets and MPD thrusters. In this study, a free burning arc experiment was operated at pressures and current densities similar to those in arc jets and MPD thrusters in an attempt to identify the physics controlling this loss mechanism. Use of a free burning arc allowed for the isolation of independent variables controlling anode power deposition and provided a convenient and flexible way to cover a broad range of currents, anode surface pressures, and applied magnetic field strengths and orientations using an argon gas. Test results showed that anode power deposition decreased with increasing anode surface pressure up to 6.7 Pa (0.05 torr) and then became insensitive to pressure. Anode power increased with increasing arc current while the electron number density near the anode surface increased linearity. Anode power also increased with increasing applied magnetic field strength due to an increasing anode fall voltage. Applied magnetic field orientation had an effect only at high currents and low anode surface pressures, where anode power decreased when applied field lines intercepted the anode surface. The results demonstrated that anode power deposition was dominated by the current carrying electrons and that the anode fall voltage was the largest contributor. Furthermore, the results showed that anode power deposition can be reduced by operating at increased anode pressures, reduced arc currents, and applied magnetic field strengths and with magnetic field lines intercepting the anode.

Soulas, George C.↗
NASA NTRS1980

satellite surface potential survey

Results of Kapton differential voltage charging of the satellite surface potential monitor Kapton samples are presented for the first 100 days of P78-2 operations. Daily charging occurrences are plotted in magnetic local time and L-shell (altitude and magnetic latitude) space as a function of magnetic activity. Most of the low level charging occurs well into the dawn local time sector whereas the highest voltage levels occur in the premidnight local time sector. The probabilities of differential charging are extremely dependent on the local time sector, the altitude (or L-shell) and of course, the magnetic activity.

Mizera, P. F.↗
NASA NTRS1989

High-voltage, full-floating 10-MHz square-wave generator with phase control

Wherein a fast (50 ns) rise-time high-frequency square-wave generator capable of switching between arbitrary voltages of high potential difference (1000 V or more) is described utilizing solid-state circuitry of low power consumption. Power field effect transistors are used as the active switching element, which afford compact size and simplified circuit construction. With the addition of monostable multivibrators, high-voltage square-wave pulse trains of controllable phase are produced. The generator should find application in a wide variety of situations where fast switching between high voltages is required, such as in time-of-flight, coincidence, and beams-modulation experiments.

Bernius, Mark T.↗
DOE OSTI2022

A Decoupled Droop Control Strategy for Cascaded Multicell Inverter with Low-Frequency Modulation

Cascaded multicell inverter (CMI), featured by its merits of modularity and fault-tolerance, is suitable for medium-voltage applications without using bulky step-up transformers. However, little research has reported grid-forming control of the CMI for the application in the power grid with high penetrations of inverter-interfaced generation. To bridge this research gap, this paper proposes a novel droop control strategy for the CMI with a low-frequency modulation to offer inertia and reactive power support to the power grid. A decoupled Q/V droop control strategy is proposed to eliminate the coupling effect from the P/ω control loop caused by the phase-angle difference between the voltages of the CMI and the grid. The output of the Q/V control loop is set as the reference voltage for each cell of the CMI, which makes the CMI naturally a voltage source to provide a grid-forming capability. Finally, the proposed control strategy shows great active and reactive power regulation and sharing capability, which is validated by simulation on two 100 kW, 2.4 kV CMIs connected in parallel to a power grid.

14 SOLAR ENERGY↗
DOE OSTI2022

Formation of a Secondary Phase in Thermally Evaporated MAPbI 3 and Its Effects on Solar Cell Performance

Thermal evaporation is a promising deposition technique to scale up perovskite solar cells (PSCs) to large areas, but the lack of understanding of the mechanisms that lead to high-quality evaporated methylammonium lead triiodide (MAPbI 3 ) films gives rise to devices with efficiencies lower than those obtained by spin coating. Here this work investigates the crystalline properties of MAPbI 3 deposited by the thermal coevaporation of PbI 2 and MAI, where the MAI evaporation rate is controlled by setting different temperatures for the MAI source and the PbI 2 deposition rate is controlled with a quartz crystal microbalance (QCM). Using grazing incident wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD), we identify the formation of a secondary orthorhombic phase (with a Pnma space group) that appears at MAI source temperatures below 155 °C. With synchrotron-based X-ray fluorescence (XRF) microscopy, we show that the changes in crystalline phases are not necessarily due to changes in stoichiometry. The films show a stochiometric composition when the MAI source is heated between 140 to 155 °C, and the samples become slightly MAI rich at 165 °C. Increasing the MAI temperature beyond 165 °C introduces an excess of MAI in the film, which promotes the formation of films with low crystallinity that contain low-dimensional perovskites. When they are incorporated in solar cells, the films deposited at 165 °C result in the champion power conversion efficiency, although the presence of a small amount of low-dimensional perovskite may lead to a lower open-circuit voltage. We hypothesize that the formation of secondary phases in evaporated films limits the performance of PSCs and that their formation can be suppressed by controlling the MAI source temperature, bringing the film toward a phase-pure tetragonal structure. Control of the phases during perovskite evaporation is therefore crucial to obtain high-performance solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Regiospecific N -alkyl substitution tunes the molecular packing of high-performance non-fullerene acceptors

The rapid development of non-fullerene acceptors (NFAs) with strong near-infrared absorption has led to remarkably enhanced short-circuit current density (J sc ) values in organic solar cells (OSCs). NFAs based on the benzotriazole (Bz) fused-ring π-core have great potential in delivering both high J sc and decent open-circuit voltage values due to their strong intramolecular charge transfer with reasonably low energy loss. Here in this work, we have designed and synthesized a series of Bz-based NFAs, PN6SBO-4F, AN6SBO-4F and EHN6SEH-4F, via regiospecific N-alkyl engineering based on the high-performance NFA mBzS-4F that was reported previously. The molecular packing of mBzS-4F, AN6SBO-4F, and EHN6SEH-4F single crystals was analyzed using X-ray crystallography in order to provide a comprehensive understanding of the correlation between the molecular structure, the charge-transporting properties, and the solar cell performance. Compared with the typical honeycomb single-crystal structure of Y6 derivatives, these NFAs exhibit distinctly different molecular packing patterns. The strong interactions of terminal indanone groups in mBzS-4F and the J-aggregate-like packing in EHN6SEH-4F lead to the formation of ordered 3D networks in single-crystals with channels for efficient charge transport. Consequently, OSCs based on mBzS-4F and EHN6SEH-4F show efficient photon-to-current conversions, achieving the highest power conversion efficiency of 17.48% with a Jsc of 28.83 mA cm -2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design and optimization of the RF input-coupler for a low-frequency, split-coaxial RFQ

The Isotope Decay-At-Rest experiment (IsoDAR) is a proposed underground experiment which is expected to be a definitive search for sterile neutrinos. In order to be decisive within 5 years, high rates of neutrinos must be produced, by impinging a 10 mA continuous wave proton beam at 60 MeV on a high power target. Due to space restrictions, a compact cyclotron was chosen as an accelerator to produce this driver beam. To overcome space charge limitations during injection, H 2 + ions are accelerated and later stripped into protons by means of a carbon foil. IsoDAR uses an especially designed low-frequency (32.8 MHz) split-coaxial Radio-Frequency Quadrupole (RFQ) to effectively bunch H 2 + ions before injecting them into this cyclotron. The RFQ will be embedded vertically in the cyclotron yoke, facilitating a very compact design. This puts stringent limits on RFQ size, type, and accessibility. Here, we present the design and optimization of the low-frequency (32.8 MHz) RF input-coupler for the IsoDAR RFQ. The design is challenging due to the necessarily small diameter of the RFQ (28 cm) and the split-coaxial type, as well as limited access to the RFQ. We have determined the optimal position and shape for the coupler, leading to a low power consumption of < 6 kW for an inter-vane voltage of 22 kV. Finally, the highest calculated fields are safely below the Kilpatrick limit for this structure.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing

As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.

42 ENGINEERING↗
DOE OSTI2026

A Dual-Active-Bridge Converter Employing a Variable Inductor Without an Auxiliary Circuit

This paper proposes a dual active bridge (DAB) converter employing a variable inductor (VI) without an auxiliary circuit. Unlike conventional VI-based designs that require an external DC bias circuit, the proposed DAB utilizes the input DC current itself as the bias source, enabling automatic inductance variation with load conditions. The inductance naturally increases at low power and decreases at high power, effectively extending the zero voltage switching (ZVS) range and reducing circulating current, respectively. The VI was experimentally implemented and characterized to obtain its inductance-current profile, which was then integrated into a PLECS model of the DAB converter for circuit and thermal simulations. Simulation results confirm that the proposed auxiliary-free VI-DAB converter achieves a wider ZVS range and lower circulating current compared with a conventional fixed-inductor DAB converter. By realizing a variable inductor without any auxiliary bias circuitry, the proposed approach maintains soft switching and reduces reactive current losses across a wide load range, leading to improved efficiency and simplified implementation.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗
DOE OSTI2023

Cadmium Magnesium Telluride for Next-Generation X-Ray Free Electron Laser, Synchrotron, and Many Other Applications

We developed a picosecond photodetector based on our Bridgman-grown and specially engineered cadmium magnesium telluride (Cd 1–x MgxTe) single crystal that is sensitive to both optical and X-ray pulses for coarse timing in free-electron laser applications. Cd 1–x MgxTe is a widebandgap semiconductor with potential applications, not only in optoelectronics, but also in particle physics as an intense pulse radiation detector for bremsstrahlung, X-ray/gamma-ray radiation, thermal neutrons, and medical imaging. For femtosecond optical and X-ray crosscorrelation, the material must have a very short lifetime, a condition that is opposite to that required for nuclear spectroscopy applications. At the same time, the material also needs to have a very low bulk leakage current, in the 10–90 nA range for voltages to even 1000 V. Hence, the ability to tailor or engineer the material is very crucial. Picosecond response and the crystal growth of this specially engineered Cd 1–x MgxTe material are presented. Furthermore, other characterization and transient measurements are discussed along with room-temperature semiconductor detector performance for other nuclear radiation detection applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Surrogate Model for Distribution Networks Influenced by Weather

Here, we propose a method for generating reduced representations of time series and for constructing low dimensional surrogate models for time dependent calculations of power and voltage in distribution networks. We employ Fourier polynomials. The surrogate model strategy is aimed at reducing the computational cost of time dependent simulations, albeit, at the expense of fidelity. The reduced representation is achieved by identifying a small and most consequential subset of degrees of freedom. In power and voltage distribution networks dynamics that are heavily influenced by strong cyclic weather events, e.g., the hourly, diurnal and seasonal cycles, the weather/climate time series spectrum exposes these most energetic components. Once the degrees of freedom are identified their amplitudes are optimized using training data. The key challenge in using spectral methods in power network surrogates is addressing the computation of quotients. For this we propose a numerically-stable deconvolution strategy.

Weather events↗
DOE OSTI2021

Investigation of Rapid, Moderate Temperature Change Thermal Cycles of a Micro-Tubular Flame-Assisted Fuel Cell

Despite many efforts and improvements over the last few decades, two of the major challenges facing solid oxide fuel cells (SOFCs) are slow heating rates to operating temperature (typically < 5 °C · min–1) and a limited ability to thermal cycle (<200 cycles). Recently, a novel hybrid setup that combines a fuel-rich combustion reformer with a SOFC was developed and utilized to investigate rapid heating, cooling, and thermal cycling of a micro-tubular SOFC. In this work, 3000 moderate thermal cycles are conducted at a heating rate exceeding 140 °C · min–1 and a cooling rate that exceeded 100 °C · min–1. The open-circuit voltage (OCV) was analyzed over the 150 h test, and a low degradation rate of ~0.0008 V per 100 cycles per fuel cell was observed in the absence of the current collector degradation. Unlike a previous test, which was conducted at lower temperatures, significant degradation of the current collector was observed during this test. Electrochemical impedance spectroscopy shows that degradation in the SOFC was due to increases in ohmic losses, activation losses at the cathode, and increased concentration losses.

Electrochemistry↗
NASA NTRS1970

Inexpensive automatic ranging for digital voltmeters and frequency counters

Seven integrated circuits incorporated at very low cost into frequency counters and digital voltmeters performing a voltage-to-frequency conversion permit automatic range changing. Extra decades are switched into and out of the counting chain as a function of the counter during the previous counting period.

Roller, R. F.↗
NASA NTRS1980

An improved welding-arc starter

Simple circuit modification makes pulse-arc starters more reliable at low currents. Once arc is started, it is maintained at lower voltage level that in previous arrangement due to sufficient concentration of metallic vapor between electrode and working surface as result of improved conduction.

Taufer, T. J.↗