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At least 1,567 records · Page 87

X-ray μ-Laue diffraction analysis of Cu through-silicon vias: A two-dimensional and three-dimensional study

Here, white X-ray μ-beam Laue diffraction is developed and applied to investigate elastic strain distributions in three-dimensional (3D) materials, more specifically, for the study of strain in Cu 10 μm diameter–80 μm deep through-silicon vias (TSVs). Two different approaches have been applied: (i) two-dimensional μ-Laue scanning and (ii) μ-beam Laue tomography. 2D μ-Laue scans provided the maps of the deviatoric strain tensor integrated along the via length over an array of TSVs in a 100 μm thick sample prepared by Focused Ion Beam. The μ-beam Laue tomography analysis enabled to obtain the 3D grain and elemental distribution of both Cu and Si. The position, size (about 3 μm), shape, and orientation of Cu grains were obtained. Radial profiles of the equivalent deviatoric strain around the TSVs have been derived through both approaches. The results from both methods are compared and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A new method for polychromatic X-ray μLaue diffraction on a Cu pillar using an energy-dispersive pn-junction charge-coupled device

μLaue diffraction with a polychromatic X-ray beam can be used to measure strain fields and crystal orientations of micro crystals. The hydrostatic strain tensor can be obtained once the energy profile of the reflections is measured. However, this remains a challenge both on the time scale and reproducibility of the beam position on the sample. In this review, we present a new approach to obtain the spatial and energy profiles of Laue spots by using a pn-junction charge-coupled device, an energy-dispersive area detector providing 3D resolution of incident X-rays. The morphology and energetic structure of various Bragg peaks from a single crystalline Cu micro-cantilever used as a test system were simultaneously acquired. The method facilitates the determination of the Laue spots’ energy spectra without filtering the white X-ray beam. The synchrotron experiment was performed at the BM32 beamline of ESRF using polychromatic X-rays in the energy range between 5 and 25 keV and a beam size of 0.5 μm × 0.5 μm. The feasibility test on the well known system demonstrates the capabilities of the approach and introduces the “3D detector method” as a promising tool for material investigations to separate bending and strain for technical materials.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Change in the magnetic structure of (Bi,Sm)FeO{sub 3} thin films at the morphotropic phase boundary probed by neutron diffraction

We report on the evolution of the magnetic structure of BiFeO{sub 3} thin films grown on SrTiO{sub 3} substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

36 MATERIALS SCIENCE↗

On one numerical scheme of the solution of a three-dimensional problem of diffraction of an electromagnetic wave on thin ideally conductive screens

In the paper, the problem of diffraction on thin ideally conductive screens is reduced to vector hypersingular integral equation with integral treated in the sense of finite Hadamard value. An numerical scheme to solve the equation is introduced. The scheme is based on piecewise approximation of unknown function. The advantage of the scheme is that integral of singular part is reduced to contour integral which can be analytically calculated so numerical calculation are significantly accelerated. Several examples of resulting numerical experiments are given in comparison with known theoretical and experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN

We report a comparative synchrotron radiation x-ray diffraction study of GaAs{sub 1−y}N{sub y} micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved by using H-opaque masks and spatially selective H removal attained by laser writing. These methods are emerging as original routes for fabrication of micro- and nano-structures with in-plane modulation of the bandgap energy. By measuring the out-of-plane and in-plane lattice parameters, we find that for both patterning approaches the largest part of the micro-structure volume remains tensile-strained and pseudomorphic to the substrate, regardless of the compressive-strained hydrogenated barriers. However, a larger lattice disorder is probed in the laser-written micro-structures and attributed to partial removal of H and/or strain changes at the micro-structure boundaries. This larger lattice disorder is confirmed by photoluminescence studies.

36 MATERIALS SCIENCE↗

Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffraction

The thermal transport properties of crystalline nanostructures on Si were studied by ultra-fast surface sensitive time-resolved electron diffraction. Self-organized growth of epitaxial Ge hut, dome, and relaxed clusters was achieved by in-situ deposition of 8 monolayers of Ge on Si(001) at 550 °C under UHV conditions. The thermal response of the three different cluster types subsequent to impulsive heating by fs laser pulses was determined through the Debye-Waller effect. Time resolved spot profile analysis and life-time mapping was employed to distinguish between the thermal response of the different cluster types. While dome clusters are cooling with a time constant of τ = 150 ps, which agrees well with numerical simulations, the smaller hut clusters with a height of 2.3 nm exhibit a cooling time constant of τ = 50 ps, which is a factor of 1.4 slower than expected.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation with ∼2.2 kA/cm{sup 2} threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4.5 W emitted in the main lobe. Means of how to increase the device internal efficiency are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

On some numerical scheme of solving diffraction problem on open and closed screens

In the paper, the problem of diffraction on thin ideally conductive screens is reduced to vector hypersingular integral equation with integral treated in the sense of finite Hadamard value. An numerical scheme to solve the equation is introduced. The scheme is based on piecewise approximation of unknown function. The advantage of the scheme is that integral of singular part is reduced to contour integral which can be analytically calculated so numerical calculation are significantly accelerated. Several examples of resulting numerical experiments are given in comparison with known theoretical and experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural phase transition of ternary dielectric SmGdO{sub 3}: Evidence from angle dispersive x-ray diffraction and Raman spectroscopic studies

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO{sub 3} (SGO) up to 25.7 GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at ∼8.9 GPa. The observed pressure-volume data were fitted with the third order Birch-Murnaghan equation of state yielding zero pressure bulk modulus B{sub 0} = 132(22) and 177(9) GPa for monoclinic (B-type) and hexagonal (A-type) phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the monoclinic to hexagonal phase transition at about 5.24 GPa. The mode Grüneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phases of SGO were calculated using pressure dependent Raman mode analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characteristics of a molybdenum X-pinch X-ray source as a probe source for X-ray diffraction studies

X-ray emission from a molybdenum X-pinch has been investigated as a potential probe for the high pressure states made in dynamic compression experiments. Studies were performed on a novel 300 kA, 400 ns generator which coupled the load directly to a low inductance capacitor and switch combination. The X-pinch load consisted of 4 crossed molybdenum wires of 13 μm diameter, crossed at an angle of 62°. The load height was 10 mm. An initial x-ray burst generated at the wire crossing point, radiated in the soft x-ray range (hυ < 10 keV). This was followed, 2–5 ns later, by at least one harder x-ray burst (hυ > 10 keV) whose power ranged from 1 to 7 MW. Time integrated spectral measurements showed that the harder bursts were dominated by K-alpha emission; though, a lower level, wide band continuum up to at least 30 keV was also present. Initial tests demonstrated that the source was capable of driving Laue diffraction experiments, probing uncompressed samples of LiF and aluminium.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Diffraction and forward physics results of the ATLAS experiment from the Run I

Various aspects of forward physics have been studied by the ATLAS collaboration using data from Run I at the LHC. In this text, main results of four published analyses are summarized, all based on data from proton-proton collisions at √(s)=7 TeV collected in 2010 or 2011. Two analyses deal with the diffractive signature, one based on single-sided events, the other on large rapidity gaps in soft events. In addition, a recent measurement of the total pp cross section using the ALFA subdetector and a recent study of higher-order QCD effects using a jet veto are discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Lessons from LHC elastic and diffractive data

In the light of LHC data, we discuss the global description of all high-energy elastic and diffractive data, using a one-pomeron model, but including multi-pomeron interactions. The LHC data indicate the need of a k{sub t}(s) behaviour, where k{sub t} is the gluon transverse momentum along the partonic ladder structure which describes the pomeron. We also discuss tensions in the data, as well as the t dependence of the slope of dσ{sub el}/dt in the small t domain.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Tension in the LHC diffractive data?

I discuss the LHC diffractive data, and compare it to predicted energy behaviour of various models. I suggest that the so called 'tension' between the experimental results, maybe due to the different Monte Carlo programs used.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

X-ray diffraction, FTIR, UV-VIS and SEM studies on chromium (III) complexes

Five Chromium (III) complexes have been prepared using Schiff base ligands which derived from benzoin and five different amino acids (H{sub 2}N-R). Samples were characterized by XRD, FTIR, UV-VIS and SEM method. X-Ray diffraction pattern analyzed that all chromium (III) complexes have hexagonal structure and crystalline, in nature, using Bruker D8 Advance instrument. Using VERTAX 70, FTIR spectroscopy reveals that Samples have (C=N), (C-O), (M-N) and (M-O) bonds in the range of 4000-400cm{sup −1}. UV-VIS spectroscopy give information that samples absorb the visible light which is in the range of 380-780nm. For this, Lambda 960 spectrometer used. SEM is designed for studying of the solid objects, using JEOL JSM 5600 instrument.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of low temperature and high magnetic field X-ray diffraction facility

The current progress of materials science regarding multifunctional materials (MFM) has put forward the challenges to understand the microscopic origin of their properties. Most of such MFMs have magneto-elastic correlations. To investigate the underlying mechanism it is therefore essential to investigate the structural properties in the presence of magnetic field. Keeping this in view low temperature and high magnetic field (LTHM) powder x-ray diffraction (XRD), a unique state-of-art facility in the country has been developed at CSR Indore. This setup works on symmetric Bragg Brentano geometry using a parallel incident x-ray beam from a rotating anode source working at 17 kW. Using this one can do structural studies at non-ambient conditions i.e. at low- temperatures (2-300 K) and high magnetic field (+8 to −8 T). The available scattering angle ranges from 5° to 115° 2θ with a resolution better than 0.1°. The proper functioning of the setup has been checked using Si sample. The effect of magnetic field on the structural properties has been demonstrated on Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} sample. Clear effect of field induced phase transition has been observed. Moreover, the effect of zero field cooled and field cooled conditions is also observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

X-ray diffraction and Raman scattering study of Cr-doped ZnFe{sub 2}O{sub 4} spinel ferrites

XRD and Raman scattering measurements were made on polycrystalline ZnFe{sub 2-x}Cr{sub x}O{sub 4} (x=0.0, 0.1, 0.2) spinel ferrites as prepared by solid-state reaction route. Rietveld refined X-ray diffraction pattern confirmed the formation of single-phase and are indexed in cubic structure with Fd3m space group. Slight reduction in the lattice parameter from 8.435 to 8.410 Ǻ, with Cr{sup 3+} ion substitution has been observed. From Raman scattering spectra, the modes of ZnFe{sub 1.9}Cr{sub 0.1}O{sub 4} and ZnFe{sub 1.8}Cr{sub 0.2}O{sub 4} are shifted towards the lower frequency side as compared to ZnFe{sub 2}O{sub 4}, this red shift is attributed to higher atomic mass of Zn (65.39 amu) as compared to Fe (55.84 amu)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗