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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,567 records · Page 87
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Modeling and Fabrication of IR Photonic Devices for Plasmon-Mediated Catalysis and Sensor Applications

Sandia National Laboratories (SNL) and Southwest Research Institute (SWRI) collaborated on this CRADA to explore novel 3-D metamaterial structures or devices that are proficient at eliciting surface plasmon-polaritons at infrared (IR) frequencies. The derived structures play a central role in answering fundamental questions pertaining to the vibrational coupling of molecules with surface plasmons and the potential binding interactions or catalytic effects that result from this coupling. Three-D metamaterial samples fabricated at SNL were characterized by SWRI, showing potential utility for binding molecules with similar vibrational frequencies that match the plasmon-polaritons of the metamaterial structure.

36 MATERIALS SCIENCE↗
DOE OSTI2022

What’s in My Toolkit? A Review of Technologies for Assessing Changes in Habitats Caused by Marine Energy Development

Marine energy devices are installed in highly dynamic environments and have the potential to affect the benthic and pelagic habitats around them. Regulatory bodies often require baseline characterization and/or post-installation monitoring to determine whether changes in these habitats are being observed. However, a great diversity of technologies is available for surveying and sampling marine habitats, and selecting the most suitable instrument to identify and measure changes in habitats at marine energy sites can become a daunting task. We conducted a thorough review of journal articles, survey reports, and grey literature to extract information about the technologies used, the data collection and processing methods, and the performance and effectiveness of these instruments. We examined documents related to marine energy development, offshore wind farms, oil and gas offshore sites, and other marine industries around the world over the last 20 years. A total of 120 different technologies were identified across six main habitat categories: seafloor, sediment, infauna, epifauna, pelagic, and biofouling. The technologies were organized into 12 broad technology classes: acoustic, corer, dredge, grab, hook and line, net and trawl, plate, remote sensing, scrape samples, trap, visual, and others. Visual was the most common and the most diverse technology class, with applications across all six habitat categories. Technologies and sampling methods that are designed for working efficiently in energetic environments have greater success at marine energy sites. In addition, sampling designs and statistical analyses should be carefully thought through to identify differences in faunal assemblages and spatiotemporal changes in habitats.

16 TIDAL AND WAVE POWER↗
DOE OSTI2023

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

2D materials↗
DOE OSTI2016

{sup 99}Mo Production at KIPT Neutron Source Facility

Argonne National Laboratory (ANL) and Kharkov Institute of Physics and Technology (KIPT) have cooperated on the construction of the Neutron Source Facility (NSF) at KIPT, Kharkov (Ukraine). The NSF facility consists of an electron accelerator driven system (ADS) generating 300 kW of thermal power for multiple applications, including medical isotope production. ANL performed extensive analyses including medical isotopes production, reactivity monitoring, operations and control, refueling, cold neutron source design, target design,and radiation shielding. The present study focuses on the use of the KIPT NSF for medical isotope production. Medical isotopes are radioactive isotopes with short half-lives used in diagnostic and therapeutic medical procedures. For example, brain cancer is difficult to treat by ordinary surgery and only brachytherapy with {sup 131}Cs, which has 9.7 days half-life, has shown effective results on the patients. {sup 99m}Tc is the most common medical isotope used in medical diagnoses because the wavelength of its gamma radiation (8.8 pm) is about the same as the conventional X-ray diagnostic devices. {sup 99m}Tc has 6 hours half-life, therefore it cannot be stored because it decays into {sup 99}Tc. The parent of {sup 99m}Tc is {sup 99}Mo, which has 66 hours half-life. Consequently, the delivery of {sup 99m}Tc occurs through shipping {sup 99}Mo samples to the medical facilities. The Neutron Source Facility of KIPT is the first ADS in the world operating at non-zero power and allows producing several isotopes for medical applications. The total power of the facility is about 300 kW, including ∼200 kW from fission reactions. The construction of the NSF has been already completed and operations will start during year 2016. After 20 irradiation days, {sup 82}Br, {sup 64}Cu, {sup 165}Dy, {sup 166}Ho, {sup 192}Ir, {sup 194}Ir, {sup 186}Re, {sup 188}Re and {sup 153}Sm have specific activities, larger than 100 MBq/mg without taking into account the self-shielding effect and therefore they are good candidates for production. The self-shielding effect plays an important role for all nuclide parents that have a large microscopic capture cross section. This effect reduces the reaction rate and therefore the specific activity. For instance, the analyses of molybdenum trioxide (MoO{sub 3}) irradiation samples have shown that the self-shielding effect may reduce the specific activity by a factor 1.4. The metallic form of natural molybdenum produces a higher specific activity, relative to the trioxide form. Analyses on the 6-day Ci {sup 99}Mo activity have shown that is possible to perform between 40 to 310 {sup 99m}Tc medical procedures per MoO{sub 3} irradiation week. The number of medical procedures depends on the diagnosed organ and the weight of the patient. (authors)

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2014

Ion probe beam experiments and kinetic modeling in a dense plasma focus Z-pinch

The Z-pinch phase of a dense plasma focus (DPF) emits multiple-MeV ions in a ∼cm length. The mechanisms through which these physically simple devices generate such high energy beams in a relatively short distance are not fully understood. We are exploring the origins of these large gradients using measurements of an ion probe beam injected into a DPF during the pinch phase and the first kinetic simulations of a DPF Z-pinch. To probe the accelerating fields in our table top experiment, we inject a 4 MeV deuteron beam along the z-axis and then sample the beam energy distribution after it passes through the pinch region. Using this technique, we have directly measured for the first time the acceleration of an injected ion beam. Our particle-in-cell simulations have been benchmarked on both a kJ-scale DPF and a MJ-scale DPF. They have reproduced experimentally measured neutron yields as well as ion beams and EM oscillations which fluid simulations do not exhibit. Direct comparisons between the experiment and simulations enhance our understanding of these plasmas and provide predictive design capability for accelerator and neutron source applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Characterization of fluorite-structured ferroelectrics using transmission electron microscopy: Techniques, challenges, and recent advances

Fluorite-structured ferroelectrics, such as hafnium oxide and its alloyed variants, are key candidates for next-generation memory devices. Yet, fundamental questions about switching mechanisms, domain dynamics, and phase evolution remain open. Transmission electron microscopy (TEM) provides unique capabilities to address these challenges by simultaneously resolving the positions of anions and cations, chemical variations, and structural transformations. Recent advances—including in situ heating, electron beam-induced switching, electron energy loss spectroscopy, and differential phase contrast imaging—have revealed critical insights into phase transitions, potential switching pathways, and oxygen vacancy behavior. However, experimental barriers such as TEM sample-preparation-induced artifacts, high coercive fields, and imaging constraints persist, especially for polycrystalline films. By offering a focused overview of current TEM developments in fluorite ferroelectrics, this work outlines how TEM contributes to understanding key phenomena and proposes a roadmap for future studies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Real-time confinement regime detection in fusion plasmas with convolutional neural networks and high-bandwidth edge fluctuation measurements

Abstract A real-time detection of the plasma confinement regime can enable new advanced plasma control capabilities for both the access to and sustainment of enhanced confinement regimes in fusion devices. For example, a real-time indication of the confinement regime can facilitate transition to the high-performing wide-pedestal (WP) quiescent H-mode, or avoid unwanted transitions to lower confinement regimes that may induce plasma termination. To demonstrate real-time confinement regime detection, we use the 2D beam emission spectroscopy (BES) diagnostic system to capture localized density fluctuations of long wavelength turbulent modes in the edge region at a 1 MHz sampling rate. BES data from 330 discharges in either L-mode, H-mode, quiescent H (QH)-mode, or WP QH-mode were collected from the DIII-D tokamak and curated to develop a high-quality database to train a deep-learning classification model for real-time confinement detection. We utilize the 6×8 spatial configuration with a time window of 1024 µ s and recast the input to obtain spectral-like features via fast Fourier transform preprocessing. We employ a shallow 3D convolutional neural network for the multivariate time-series classification task and utilize a softmax in the final dense layer to retrieve a probability distribution over the different confinement regimes. Our model classifies the global confinement state on 44 unseen test discharges with an average F 1 score of 0.94, using only ∼1 ms snippets of BES data at a time. This activity demonstrates the feasibility for real-time data analysis of fluctuation diagnostics in future devices such as ITER, where the need for reliable and advanced plasma control is urgent.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Advanced Thin Film Core Technology: CIGS Final Technical Report (FTR)

Cu(In,Ga)Se 2 (CIGS) thin-film photovoltaics are a high-efficiency and reliable technology. This project completed research in two important areas and was designed to work collaboratively with industrial partners. Task 1: Alkali Science focused on alkali post-deposition treatments (PDT). PDTs have been instrumental in the dramatic voltage improvements that have moved CIGS device efficiencies from 20% to 23.35% [1]. Based on a survey of CIGS companies at the beginning of the project, the single biggest breakthrough for the CIGS community would be a mechanistic understanding of the role of alkalis in the material system. Significant accomplishments of Task 1: Alkali Science: 1) KF post-deposition treatments were shown to improve lifetime, open-circuit voltage (VOC), and efficiency of industrial partner samples, even when done as a later step, separate from the original CIGS deposition. 2) KF boosted efficiency when incorporated at the end of the third stage of NREL CIGS growth. 3) XPS characterization of CIGS surfaces with and without PDTs led to a proposed mechanism whereby K drives structural transformation at 350 degrees C that is locked in at room temperature even after K is rinsed away. 4) Published recipes for KF and RbF PDTs. Literature to date did not provide enough detail to quickly reproduce experimental results. 5) Identified most important parameters (RbF cell temperature and lamp setpoint temperature) and set boundaries for successful RbF PDTs. The purpose of Task 2: Cell-level Reliability was to overcome the largest challenges to investor confidence and long product lifetime in CIGS-based photovoltaic products: metastability, shading-induced hot spots, and potential-induced degradation (PID). Key findings were made in each of these areas by studying CIGS reliability at the cell level: 1) Published NREL's cell-level reliability testing procedures along with challenges that were encountered while developing them. These were also distributed to the community through an MRS conference presentation. 2) Decreased metastability by adding a CdS hole-injection layer between the CIGS and Zn(O,S) in the device stack. It also improved device performance. Materials other than CdS can be used for the same purpose. 3) Reduced front-glass PID by replacing soda-lime glass with low-Na borosilicate glass. 4) Found that PID depends on leakage current and light/electrical bias. This will help labs avoid test-specific degradation. 5) Discovered that CIGS can suffer from two different types of PID with different mechanisms. Front is slower and leads to shunting ZnO. Back is faster and degrades the p-n junction. 6) Holding cells at open circuit slows PID compared to short circuit. This affects testing protocols for glass/glass modules.

14 SOLAR ENERGY↗
DOE OSTI2022

Two–Photon Printing of Shape–Memory Microstructures and Metasurfaces via Radical–Mediated Thiol–Vinyl Hydrothiolation

Shape-memory resists capable of high-resolution curing into arbitrarily designed structures are increasingly demanded for soft robotics, optical sensors, microscale manufacturing, and biomedicine. Amorphous, shape-memory thiol-vinyl networks were printed using two-photon polymerization (2PP) curing of a simple resin formulated with commercially available reagents. The ability to print high-resolution feature sizes down to 200 nm is attributed to the use of radicalmediated, thiol-vinyl step-growth polymerization that quickly crosslinks the resin, limiting diffusive transport. The thermomechanical behavior of the 2PP-cured material analyzed in compression, tension and three-point bending is similar to the behavior of the UV-polymerized samples. To demonstrate the ability to design, field, and test 4D responsive microstructures, an array of nine springs with coil diameters of 330 μm was printed. Following compressive shapefixing, printed arrays can release 11 μJ of stored elastic strain energy when reheated. Further, a new concept of dichroic-memory of a metamaterial device is demonstrated by printing a twisted woodpile structure with circular dichroism as characterized by Mueller Matrix ellipsometry. Furthermore, our results demonstrate how combining high-resolution 2PP curing with stimuli-responsive molecular architectures can further the engineering of responsive microstructures and metamaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Oxygen nonstoichiometry and thermo-chemical stability of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}}

The oxygen nonstoichiometry of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}} has been the topic of various reports in the literature, but has been exclusively measured at high oxygen partial pressures, pO{sub 2}, and/or elevated temperatures. For applications of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}}, such as solid oxide fuel cell cathodes or oxygen permeation membranes, knowledge of the oxygen nonstoichiometry and thermo-chemical stability over a wide range of pO{sub 2} is crucial, as localized low pO{sub 2} could trigger failure of the material and device. By employing coulometric titration combined with thermogravimetry, the oxygen nonstoichiometry of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}} was measured at high and intermediate pO{sub 2} until the material decomposed (at log(pO{sub 2}/bar) Almost-Equal-To -4.5 at 1073 K). For a gradually reduced sample, an offset in oxygen content suggests that La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}} forms a 'super-reduced' solid solution before decomposing. When the sample underwent alternate reduction-oxidation, a hysteresis-like pO{sub 2} dependence of the oxygen content in the decomposition pO{sub 2} range was attributed to the reversible formation of ABO{sub 3} and A{sub 2}BO{sub 4} phases. Reduction enthalpy and entropy were determined for the single-phase region and confirmed interpolated values from the literature. - Graphical abstract: Oxygen nonstoichiometry (shown as 3-{delta}) of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}} as a function of pO{sub 2} at 773-1173 K. The experimental data were obtained by thermogravimetric analysis (TG) and coulometric titration (measured either by a simple reduction (CT1) or a 'two-step-forward one-step-back' reduction-oxidation (CT2) procedure). D1 and D2 denote the decomposition pO{sub 2}. The solid lines are the fit to the thermogravimetry and CT1 data. The dashed lines represent the non-equilibrium region where the sample shows a super-reduced state. Highlights: Black-Right-Pointing-Pointer Oxygen nonstoichiometry of La{sub 0.6}Sr{sub 0.4}CoO{sub 3-{delta}} at intermediate temperatures and p(O2). Black-Right-Pointing-Pointer Experimental confirmation of previously interpolated reduction enthalpy. Black-Right-Pointing-Pointer Decomposition p(O2) assessed by coulometric titration. Black-Right-Pointing-Pointer Hysteresis-like p(O2) dependence of oxygen content at decomposition p(O2).

36 MATERIALS SCIENCE↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗
DOE OSTI2013

Ultrafast switching in wetting properties of TiO{sub 2}/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation

We have demonstrated dark hydrophilicity of single crystalline rutile TiO{sub 2}(100) thin films, in which rapid switching from a hydrophobic to a hydrophilic surface was achieved using nanosecond excimer laser irradiation. The TiO{sub 2}/YSZ/Si(001) single crystalline heterostructures were grown by pulsed laser deposition and were subsequently irradiated by a single pulse of a KrF excimer laser at several energies. The wettability of water on the surfaces of the samples was evaluated. The samples were hydrophobic prior to laser annealing and turned hydrophilic after laser annealing. Superhydrophilic surfaces were obtained at higher laser energy densities (e.g., 0.32 J.cm{sup -2}). The stoichiometries of the surface regions of the samples before and after laser annealing were examined using XPS. The results revealed the formation of oxygen vacancies on the surface, which are surmised to be responsible for the observed superhydrophilic behavior. According to the AFM images, surface smoothening was greater in films that were annealed at higher laser energy densities. The samples exhibited hydrophobic behavior after being placed in ambient atmosphere. The origin of laser induced wetting behavior was qualitatively understood to stem from an increase of point defects near the surface, which lowered the film/water interfacial energy. This type of rapid hydrophobic/hydrophilic switching may be used to facilitate fabrication of electronic and photonic devices with novel properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of Zr{sup 4+} substitution on ferroelectric and dielectric properties of BaTiO{sub 3} ceramics

A lead-free system, BaTi{sub (1−x)}Zr{sub x}O{sub 3}, with x varying from 0.00 to 0.15 (in steps of 0.05), were prepared by solid state reaction method. X-ray diffraction study confirms the perovskite-type tetragonal structure with, a = 4.003 Å and c = 3.998 Å for pure BaTiO{sub 3} and a = 4.027 Å and c = 4.023 Å for pure BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. Microstructure changes, with Zr{sup 4+} in BaTi{sub (1−x)}Zr{sub x}O{sub 3}, are studied using scanning electron microscopy (SEM). Dielectric constant measurements show the maximum dielectric constant value (~ 9445) for a composition, BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. P-E loop measurements support ferroelectric nature for all the samples and maximum polarization value (~10.55 µC/cm{sup 2}) with squareness ratio ~0.6, at electric field 7.11 kV/cm, is obtained for BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} composition. All the measured properties suggest that the BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} may be suitable for memory device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Game Theoretic Orchestration for Cooperation among Power Distribution System Applications

The evolving transformation with the proliferation of distributed energy resources and advanced metering, necessitates advanced distribution systems to integrate and orchestrate a large number of grid-edge devices while also serving multiple system-level objectives such as resilience, decarbonization, equity and other system mandates. The parallel deployment and control of resources towards achieving diverse objectives may lead to conflicts between applications that want to control overlapping sets of device setpoints, potentially leading to oscillatory behavior and suboptimal performance. This work aims at leveraging game theoretic framework to drive cooperative behavior among competitive applications. The work proposes a weighted-consensus based game design to facilitate conflict resolution through consensus-building iterations for modular platform. Simulation-based evaluation on a sample test system demonstrates the performance the proposed deconfliction strategy in resolving operational conflicts and achieving close-to-optimal trade off among the applications. Results also compare the proposed strategy with a distribution optimization approach and illustrate it effectiveness in diverse apps regardless of their design while also incentivizing apps with flexible design.

Advanced distribution operations, cooperation, app↗
DOE OSTI2026

SDN-Based Smart Cyber Switching (SCS) for Cyber Restoration of a Digital Substation

In recent years, critical infrastructure and power grids have increasingly been targets of cyber-attacks, causing widespread and extended blackouts. Digital substations are particularly vulnerable to such cyber incursions, jeopardizing grid stability. This paper addresses these risks by proposing a cybersecurity framework that leverages software-defined networking (SDN) to bolster the resilience of substations based on the IEC- 61850 standard. The research introduces a strategy involving smart cyber switching (SCS) for mitigation and concurrent intelligent electronic device (CIED) for restoration, ensuring ongoing operational integrity and cybersecurity within a substation. The SCS framework improves the physical network’s behavior (i.e., leveraging commercial SDN capabilities) by incorporating an adaptive port controller (APC) module for dynamic port management and an intrusion detection system (IDS) to detect and counteract malicious IEC-61850-based sampled value (SV) and generic object-oriented system event (GOOSE) messages within the substation’s communication network. The framework’s effectiveness is validated through comprehensive simulations and a hardware-in-the-loop (HIL) testbed, demonstrating its ability to sustain substation operations during cyber-attacks and significantly improve the overall resilience of the power grid.

Liu, Chen-Ching (ORCID:0000000289417958)↗
DOE OSTI2013

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L.↗