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At least 1,567 records · Page 87

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exploring the origins of the indentation size effect at submicron scales

Significance Downscaling material structure into ever-decreasing levels for modern technological advancements demands small-scale mechanical characterizations of materials, such as nanoindentation. Thus, a comprehensive understanding of indentation size effect (ISE) has a far-reaching impact, but such understanding remains incomplete at the submicron scale despite a decades-long quest since the 1980s. Here, we explored the origins of this effect experimentally by linking dislocation behavior evolution with nanoindentation mechanical data at various depths. Importantly, the dislocation behavior is found to be strongly depth dependent and gives rise to subgrain formation progressively. Aided by subgrain boundaries, the ISE mechanism transitions from dislocation source starvation to dislocation interaction as indentation depth increases. The critical mechanism transition elucidates the distinctive ISE behavior at the submicron scale.

36 MATERIALS SCIENCE↗

Investigation of the effect of structural defects from hydride precipitation on superconducting properties of high purity SRF cavity Nb using magneto-optical and electron imaging methods

Abstract Nb is an elemental superconductor with a critical temperature of 9.3 K and is widely used to fabricate superconducting radiofrequency (SRF) cavities for particle accelerators. However, microstructural defects in Nb, such as grain boundaries (GBs) and dislocations, can act as pinning centers for magnetic flux that can degrade SRF cavity performance. Hydrogen contamination is also detrimental to SRF cavity performance due to the formation of normal conducting hydrides during cool down. In this study, disc shaped Nb bi-crystals extracted from high-purity large-grain Nb slices were investigated to study the effects of GBs, hydrogen, and dislocations on superconducting properties. Grain orientation and GB misorientation were measured using Laue x-ray diffraction and electron backscattered diffraction (EBSD) analyses. Cryogenic magneto-optical imaging was used to directly observe magnetic flux penetration below T c = 9.3 K. Damage caused by low temperature precipitation of hydrides and their dissolution upon reheating after cryogenic cycles was examined using electron channeling contrast imaging, and EBSD. The relationships between hydride formation, dislocation content, GBs, cryo-cooling, heat treatment (HT), and flux penetration indicate that both GB character and hydrogen content affect magnetic flux penetration. Such flux penetration could be facilitated by dislocation structures and low angle GBs resulting from hydride precipitation and HT.

36 MATERIALS SCIENCE↗

Bulk transport paths through defects in floating zone and Al flux grown SmB 6

We investigate the roles of disorder on low-temperature transport in SmB 6 crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arise from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. In this work, we consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB 6 .

36 MATERIALS SCIENCE↗

Mechanisms of defect formation in ingots of 4H silicon carbide polytype

The methods of optical microscopy and X-ray diffractometry have been used to study the features of defect structure in ingots of the SiC-4H polytype; the ingots have featured different diameters and have been grown by the modified Lely method on seeds with deviations of several degrees from the exact orientation (0001)C in the direction Left-Pointing-Angle-Bracket 112-bar0 Right-Pointing-Angle-Bracket (off-cut (0001) seeds). The slip bands observed in the crystals are extended along the [112-bar0] direction and correspond to the secondary slip system of threading dislocations a/3 Left-Pointing-Angle-Bracket 112-bar0 Right-Pointing-Angle-Bracket (1-bar100) for hexagonal close packing (HCP) crystals. Low-angle dislocation boundaries directed along [11-bar00] accommodate the disorientation of neighboring domains, which results from their mutual rotation around the [0001] axis. Enlargement of ingots leads to some increase in the dislocation density, mainly due to threading edge dislocations. The average density of micropipes is in the range of 5-20 cm{sup -2} and practically remains unchanged as the ingot size is increased.

36 MATERIALS SCIENCE↗

Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon

The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanism of Plastic Collapse of Nanosized Crystals with BCC Lattice under Uniaxial Compression

Within the dislocation–kinetic approach, based on the nonlinear kinetic equation for dislocation density, an attempt is made to consider the problem of a catastrophic plastic collapse of defect-free nanocrystals of metals with bcc lattice under their uniaxial compression with a constant deformation rate. Solutions of this equation were found in the form of moving waves, describing the dislocation multiplication process as the wave moves along the crystal from a local dislocation source. Comparison of the theory with the results of experiments on defect-free Mo nanocrystals showed that their ultrahigh strength at the initial stage of deformation is associated with a low rate of rise of crystal plastic deformation in comparison with the growth of its elastic component. The subsequent plastic collapse of crystal is caused by a sharp increasing the plastic component, ending with reaching the equality of elastic and plastic deformation rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Substructure of Intermetallic Thin-Film Cu{sub 3}Sn

The crystalline structure of intermetallic Cu{sub 3}Sn synthesized by successively condensing thin layers of copper and tin on a substrate at 150°C has been studied. Cu{sub 3}Sn compound exists in a very narrow homogeneity range and has a long-period close-packed ordered D0{sub 19} superstructure. It has been found that the crystal lattice exhibits many slip traces associated with dislocation motion. The dislocation motion is due to the stressed state of the crystal, which can be characterized as uniform extension. Electron micrographs show that slip traces in the Cu{sub 3}Sn crystal are parallel to the ( 1-bar 1-bar 21) and (11 2-bar 1) planes belonging to pyramidal slip system II, which is a main slip system along with pyramidal and basal ones. Slip traces result from the motion of partial dislocations, as indicated by the amount of slip, which is equal to half the interplanar distance. Since the crystal is ordered, slip is accomplished by a pair of superpartial dislocations and a slip trace may be a superstructural or complex stacking fault.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantifying irradiation defects in zirconium alloys: a comparison between transmission electron microscopy and whole-pattern diffraction line-profile analysis - 2016-0089

Irradiation-induced dislocations significantly affect the mechanical properties of zirconium alloys, altering slip and influencing creep and growth. Thus, the quantitative characterization of irradiation defects as a function of fluence, cold work, and/or thermal treatments is important for models that attempt to predict their impact on properties. Whole-pattern diffraction line-profile analysis (DLPA) is a well-established modern tool for microstructure characterization based on first-principle physical models for dislocation density measurements in plastically deformed materials. However, applying these DLPA methods directly to irradiated materials yields higher than expected dislocation density values compared with historical transmission electron microscopy (TEM) measurements and past line-broadening analysis studies calibrated to TEM observations. In an effort to understand these differences, a new microstructural model was developed for DLPA to specifically address dislocation structures consisting of elliptical - and -component loops. To compare the refined DLPA method with TEM measurements, high-resolution neutron diffraction patterns on nonirradiated and irradiated Zr-2.5Nb samples were collected with the Neutron Powder Diffractometer instrument at the Los Alamos Neutron Science Center and were evaluated. High-resolution TEM measurements were performed at the Reactor Materials Testing Laboratory, Queen's University, for comparison with the DLPA results. The capabilities and inherent uncertainties of both the refined DLPA and TEM methods are compared and discussed in detail. We show that the differences between the density values provided by DLPA and TEM are inherent to the methods and can be reconciled with the interpretation of the data. (authors)

36 MATERIALS SCIENCE↗

Gradient Plasticity Model and its Implementation into MARMOT

The influence of strain gradient on deformation behavior of nuclear structural materials, such as body-centered cubic (bcc) iron alloys has been investigated. We have developed and implemented a dislocation based strain gradient crystal plasticity material model. A mesoscale crystal plasticity model for inelastic deformation of metallic material, bcc steel, has been developed and implemented numerically. Continuum Dislocation Dynamics (CDD) with a novel constitutive law based on dislocation density evolution mechanisms was developed to investigate the deformation behaviors of single crystals, as well as polycrystalline materials by coupling CDD and crystal plasticity (CP). The dislocation density evolution law in this model is mechanism-based, with parameters measured from experiments or simulated with lower-length scale models, not an empirical law with parameters back-fitted from the flow curves.

continuous dislocation dynamics↗

Fundamental Study of Fatigue Crack Initiation at Grain and Twin Boundaries in Austentic Stainless Steel (Final Technical Report)

The overarching goal of this project was to understand the dislocation-based mechanisms driving fatigue crack initiation at grain and twin boundaries. The hypothesis of the work is that dislocation structures equivalent to persistent slip bands (PSBs) form in the boundaries, leading to local stress concentrations and fatigue crack initiation. The sub-goals associated with this work include: • Understanding the evolution of the dynamic stress state and dislocation density surrounding PSB/grain boundary interactions. This will require the development of new techniques that couple high resolution electron backscatter diffraction (HREBSD) with in situ scanning electron microscopy (SEM) deformation. • Uncover the mechanisms by which dislocations are accommodated in grain and twin boundaries during fatigue. The proposed approach here is to conduct in situ transmission electron microscopy (TEM) deformation experiments on fatigued samples. • Establish correlations between microstructure, deformation accommodation, and crack initiation across time and length scales. This work primarily focuses on understanding fatigue crack initiation in austenitic stainless steels, though promising work by an undergraduate researcher extended the work to high purity Al.

42 ENGINEERING↗

An effect of the networks of the subgrain boundaries on spectral responses of thick CdZnTe detectors

CdZnTe (CZT) crystals used for nuclear-radiation detectors often contain high concentrations of subgrain boundaries and networks of poligonized dislocations that can significantly degrade the performance of semiconductor devices. These defects exist in all commercial CZT materials, regardless of their growth techniques and their vendor. We describe our new results from examining such detectors using IR transmission microscopy and white X-ray beam diffraction topography. We emphasize the roles on the devices performances of networks of subgrain boundaries with low dislocation densities, such as poligonized dislocations and mosaic structures. Specifically, we evaluated their effects on the gamma-ray responses of thick, >10 mm, CZT detectors. Our findings set the lower limit on the energy resolution of CZT detectors containing dense networks of subgrain boundaries, and walls of dislocations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Microstructural creep, fatigue and creep-fatigue modeling of Nickel-based superalloy Inconel 617 at high temperature - 18506

Inconel 617 is a solution strengthened nickel-based alloy which has been considered as one of the leading structural material for the intermediate heat exchangers (IHX) in very high temperature reactor (VHTR). In order to gain understanding of the creep and fatigue deformation mechanisms and their interactions in alloy 617 operating in the VHTR environment, a computational model that operates at the microstructural scale has been developed for creep, fatigue and creep-fatigue modeling of alloy 617. This model is based on an isothermal, large deformation crystal plasticity finite element (CPFE) formulation and idealizes the deformation in the crystal lattice as collective glide and climb of dislocations. A recently developed glide resistance evolution equation by the authors that can capture the intermediate softening observed in both fatigue and creep-fatigue cycles of Inconel 617 at high temperature is adopted for the dislocation glide formulation. Dislocation climb is incorporated to account for the interactions between dislocations and local point defects at high temperature. The CP equations are solved incrementally as the constitutive relationship in the context of FE analysis on fully resolved microstructure reconstructed from experiment data. Model parameters are calibrated and verified using experimental tests. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

A mesh-independent method for planar three-dimensional crack growth in finite domains: A mesh-independent method for crack growth in 3D finite domains

The discrete crack mechanics (DCM) method is a dislocation-based crack modeling technique where cracks are constructed using Volterra dislocation loops. The method allows for the natural introduction of displacement discontinuities, avoiding numerically expensive techniques. Mesh dependence in existing computational modeling of crack growth is eliminated by utilizing a superposition procedure. The elastic field of cracks in finite bodies is separated into two parts: the infinite-medium solution of discrete dislocations and an finite element method solution of a correction problem that satisfies external boundary conditions. In the DCM, a crack is represented by a dislocation array with a fixed outer loop determining the crack tip position encompassing additional concentric loops free to expand or contract. Solving for the equilibrium positions of the inner loops gives the crack shape and stress field. The equation of motion governing the crack tip is developed for quasi-static growth problems. Additionally, convergence and accuracy of the DCM method are verified with two- and three-dimensional problems with well-known solutions. Crack growth is simulated under load and displacement (rotation) control. In the latter case, a semicircular surface crack in a bent prismatic beam is shown to change shape as it propagates inward, stopping as the imposed rotation is accommodated.

42 ENGINEERING↗

In Situ TEM Investigation of ZnO Nanowires during Sodiation and Lithiation Cycling

The development of sodium-ion batteries has drawn lots of attention recently due to the low-cost and eco-friendly sodium source. However, a fundamental understanding of the sodiation behavior for commonly used electrode materials is still limited. Here, combining in situ transmission electron microscopy, aberration-corrected scanning transmission electron microscopy, and ex situ battery cycling tests, the lithiation and sodiation behavior of ZnO nanowires is investigated. The findings show a direct correlation between the mechanical behavior of the lithiated/sodiated ZnO nanowires and their electrochemical cyclability. The mechanical brittleness of LiZn and the formation of nanocracks lead to the poor cyclability of Li-ion batteries with a ZnO anode. However, the sodiated ZnO nanowires show profuse dislocation plasticity. The observed high-density dislocations offer the sodiated ZnO anode more ductility and subsequently better cyclability than its Li-ion counterpart. The results reveal the importance of understanding the correlation between mechanical properties of battery electrodes and their cycling abilities.

Asayesh-Ardakani, Hasti↗

Three-dimensional nonlocal anisotropic elasticity: a generalized continuum theory of Ångström-mechanics

In this paper, based on Eringen’s theory of nonlocal anisotropic elasticity, the three-dimensional nonlocal anisotropic elasticity of generalized Helmholtz type is developed. The derivation of a new three-dimensional nonlocal anisotropic kernel, which is the Green function of the three-dimensional anisotropic Helmholtz equation, enables to capture anisotropic length scale effects by means of a length scale tensor, which is a symmetric tensor of rank two. The derived nonlocal kernel function possesses up to six internal characteristic lengths on the Ångström-scale. The presented theory of nonlocal elasticity possesses the appropriate property to be a generalized continuum theory of Ångström-mechanics, since the range of its validity and applicability is up to the Ångström-scale. The connection between the theory of nonlocal anisotropic elasticity and lattice theory is established. The tensor function of nonlocal elastic moduli as well as the nonlocal kernel function is given in terms of the Hessian matrix in the lattice approach. In the framework of the considered theory, the modeling of dislocations in anisotropic materials taking into consideration anisotropic dislocation core effects is presented. Important dislocation key formulas, namely the anisotropic Peach–Koehler stress formula, the Peach–Koehler force and the anisotropic Blin’s formula, are derived. A major tool used in deriving the expression of anisotropic Blin’s formula is Kirchner’s so-called FF-tensor, which is here generalized toward nonlocal anisotropic elasticity. The main feature and advantage of the derived fields, compared with the corresponding ones in classical anisotropic elasticity, is that they are free of singularities. Numerical applications to straight dislocations in bcc Fe are given, revealing the ability and advantage of the considered theory to describe adequately nonsingular anisotropic stress and self-energy fields capturing the effects of anisotropy on the Ångström-scale.

42 ENGINEERING↗

Temperature and radiation effects on brittle versus ductile fracture behavior in miscible phase boundaries: insight from atomistic simulations

Temperature- and irradiation-assisted failure mechanisms in miscible phase boundaries are clarified via atomistic calculations. We first establish the temperature-dependent brittle-to-ductile transition in U–Zr miscible phase boundaries. Our results confirm that these boundaries are mostly brittle at low temperatures and ductile at elevated temperatures. We then investigate the changes induced by irradiation on the fracture mechanisms in such phase boundaries. The irradiation-induced defect accumulation follows a multi-stage process that starts with the accumulation of isolated small dislocation loops before transitioning to the saturation and growth of larger dislocation loops and end up with a reorganization into forest dislocations. The accumulation of loops is the primary feature to participate in the delineation between brittle and ductile interfacial fracture in irradiated phase boundaries. At low damage levels, radiation defect interactions with the crack tip are limited and U–Zr miscible boundaries fail through the emission of dislocations ahead of the crack tip followed by brittle cleavage in agreement with the classical Griffith’s criterion for crack stability. At higher damage levels, the failure mode transitions from brittle crack growth to ductile void growth. In this case, the microcrack tip is blunted by the high density of pre-existing, radiation-induced defects in the vicinity of the crack. This interaction leads to the development and growth of a cavity at the interface as opposed to interfacial cleavage.

36 MATERIALS SCIENCE↗