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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,567 records · Page 87
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Phase diagram of hopping conduction mechanisms in polymer nanofiber network

Network formation by nanofiber crosslinking is usually in polymer materials as application in organic semiconductor devices. Electron hopping transport mechanisms depend on polymer morphology in network. Conducting polymers morphology in a random network structure is modeled by a quasi-one-dimensional system coupled of chains or fibers. We observe the varying hopping conduction mechanisms in the polyaniline nanofibers of the random network structure. The average diameter d of the nanofibers is varied from approximately 10 to 100 nm. The different dominant hopping mechanisms including Efros-Shklovskii variable-range hopping (VRH), Mott VRH, and nearest-neighbor hopping are dependent on temperature range and d in crossover changes. The result of this study is first presented in a phase diagram of hopping conduction mechanisms based on the theories of the random network model. The hopping conduction mechanism is unlike in normal semiconductor materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators

We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Magnetostrictive Fe{sub 73}Ga{sub 27} nanocontacts for low-field conductance switching

The electrical conductance G of magnetostrictive nanocontacts made from Galfenol (Fe{sub 73}Ga{sub 27}) can be reproducibly switched between “on” and “off” states in a low magnetic field of ∼20–30 mT at 10 K. The switching behavior is in agreement with the magnetic field dependence of the magnetostriction inferred from the magnetization behavior, causing a positive magnetostrictive strain along the magnetic field. The repeated magnetic-field cycling leads to a stable contact geometry and to a robust contact configuration with a very low hysteresis of ∼1 mT between opening and closing the contact due to a training effect. Non-integral multiples of the conductance quantum G{sub 0} observed for G > G{sub 0} are attributed to electron backscattering at defect sites in the electrodes near the contact interface. When the contact is closed either mechanically or by magnetic field, the conductance shows an exponential behavior below G{sub 0} due to electron tunneling. This allows to estimate the magnetostriction λ = 4 × 10{sup −5} at 10 K. The results demonstrate that such magnetostrictive devices are suitable for the remote control of the conductance by low magnetic fields in future nanotechnology applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Highly conductive grain boundaries in copper oxide thin films

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Role of low-energy phonons with mean-free-paths >0.8 μm in heat conduction in silicon

Despite recent progress in the first-principles calculations and measurements of phonon mean-free-paths (ℓ), contribution of low-energy phonons to heat conduction in silicon is still inconclusive, as exemplified by the discrepancies as large as 30% between different first-principles calculations. In this study, we investigate the contribution of low-energy phonons with ℓ>0.8 μm by accurately measuring the cross-plane thermal conductivity (Λ cross ) of crystalline silicon films by time-domain thermoreflectance (TDTR), over a wide range of film thicknesses 1≤ h f ≤ 10 μm and temperatures 100 ≤ T ≤ 300 K. We employ a dual-frequency TDTR approach to improve the accuracy of our Λ cross measurements. We find from our Λ cross measurements that phonons with ℓ>0.8 μm contribute 53 W m -1 K -1 (37%) to heat conduction in natural Si at 300 K while phonons with ℓ>3 μm contribute 523 W m -1 K -1 (61%) at 100 K, >20% lower than first-principles predictions of 68 W m -1 K -1 (47%) and 717 W m -1 K -1 (76%), respectively. Using a relaxation time approximation (RTA) model, we demonstrate that macroscopic damping (e.g., Akhieser s damping) eliminates the contribution of phonons with mean-free-paths >20 μm at 300 K, which contributes 15 W m -1 K -1 (10%) to calculated heat conduction in Si. Thus, we propose that omission of the macroscopic damping for low-energy phonons in the first-principles calculations could be one of the possible explanations for the observed differences between our measurements and calculations. Finally, our work provides an important benchmark for future measurements and calculations of the distribution of phonon mean-free-paths in crystalline silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Basal-plane thermal conductivity of nanocrystalline and amorphized thin germanane

Recently, we synthesized Germanane (GeH), a hydrogen-terminated layered germanium structure. We employed a four-probe thermal transport measurement method to obtain the basal-plane thermal conductivity of thin exfoliated GeH flakes and correlated the measurement results with the crystal structure. Furthermore, the obtained thermal conductivity increases with increasing temperature, suggesting that extrinsic grain boundary and defect scattering dominate intrinsic phonon-phonon scattering. Annealing a polycrystalline GeH sample at 195 C caused it to become amorphous, reducing the room-temperature thermal conductivity from 0.53± 0.03 W m -1 K -1 , which is close to the value calculated for 3.3 nm grain size, to 0.29± 0.02 W m -1 K -1 , which approaches the calculated amorphous limit in the basal plane thermal conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thermal conductivity of ternary III-V semiconductor alloys: The role of mass difference and long-range order

Thermal transport in bulk ternary III-V arsenide (III-As) semiconductor alloys was investigated using equilibrium molecular dynamics with optimized Albe-Tersoff empirical interatomic potentials. Existing potentials for binary AlAs, GaAs, and InAs were optimized to match experimentally obtained acoustic-phonon dispersions and temperature-dependent thermal conductivity. Calculations of thermal transport in ternary III-Vs commonly employ the virtual-crystal approximation (VCA), where the structure is assumed to be a random alloy and all group-III atoms (cations) are treated as if they have an effective weighted-average mass. Here, we showed that it is critical to treat atomic masses explicitly and that the thermal conductivity obtained with explicit atomic masses differs considerably from the value obtained with the average VCA cation mass. The larger the difference between the cation masses, the poorer the VCA prediction for thermal conductivity. The random-alloy assumption in the VCA is also challenged because X-ray diffraction and transmission electron microscopy show order in InGaAs, InAlAs, and GaAlAs epilayers. We calculated thermal conductivity for three common types of order (CuPt-B, CuAu-I, and triple-period-A) and showed that the experimental results for In 0.53 Ga 0.47 As and In 0.52 Al 0.48 As, which are lattice matched to the InP substrate, can be reproduced in molecular dynamics simulation with 2% and 8% of random disorder, respectively. Based on our research, thermal transport in ternary III-As alloys appears to be governed by the competition between mass-difference scattering, which is much more pronounced than the VCA suggests, and the long-range order that these alloys support.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Impurity-derived p -type conductivity in cubic boron arsenide

Cubic boron arsenide (c-BAs) exhibits an ultrahigh thermal conductivity (κ) approaching 1300 Wm -1 K -1 at room temperature. However, c-BAs is believed to incorporate high concentrations of crystal imperfections that can both quench κ and act as sources of unintentional p-type conductivity. Although this behavior has been attributed to native defects, we show here, using optical and magnetic resonance spectroscopies together with first-principles calculations, that unintentional acceptor impurities such as silicon and/or carbon are more likely candidates for causing the observed conductivity. These results also clarify that the true low-temperature bandgap of c-BAs is 0.3 eV higher than the widely reported value of ~1.5 eV. Low-temperature photoluminescence measurements of c-BAs crystals reveal impurity-related recombination processes (including donor-acceptor pair recombination), and electron paramagnetic resonance experiments show evidence for effective mass-like shallow acceptors. Our hybrid density functional calculations indicate that native defects are incapable of giving rise to such signals. Instead, we find that group-IV impurities readily incorporate on the As site and act as shallow acceptors. Finally, such impurities can dominate the electrical properties of c-BAs, and their influence on phonon scattering must be considered when optimizing thermal conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. In this work, we measure the thermal conductivity of crystalline AlN by the 3 ω method, finding that it ranges from 674 ± 56 Wm –1 K –1 at 100 K to 186 ± 7 Wm –1 K –1 at 400 K, with a value of 237 ± 6 Wm –1 K –1 at room temperature. We compare these data with analytical models and first-principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find that Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths (MFPs), over ~7 μ m at room temperature, and 50% by phonons with MFPs over ~0.3 μ m. Consequently, the effective thermal conductivity of AlN is strongly reduced in submicrometer thin films or devices due to phonon-boundary scattering.

42 ENGINEERING↗
DOE OSTI2020

Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN

The impact of impurities on the thermal conductivity of halide vapor phase epitaxy gallium nitride (GaN) was studied. Phonon resonances with impurities, modeled as Lorentz oscillators, were used to explain the much lower thermal conductivity than predicted by the Debye–Callaway model. The resonance energies for the oscillators were determined by Raman spectroscopy for Mn and by mass difference approximation for C and Fe. Employing the obtained resonance energies and proportionality factors extracted as fitting parameters, the modified model showed a good agreement with the experimental data. While the doping decreased thermal conductivity for all temperatures, the room temperature values started decreasing significantly once the doping levels approached ~10 19 cm -3 . Consequently, required doping levels to achieve certain GaN-based devices may reduce the thermal conductivity of GaN by as much as 1/3.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hall conductance and the statistics of flux insertions in gapped interacting lattice systems

We study charge transport for zero-temperature infinite-volume gapped lattice systems in two dimensions with short-range interactions. We show that the Hall conductance is locally computable and is the same for all systems that are in the same gapped phase. Here, we provide a rigorous version of Laughlin’s flux-insertion argument, which shows that for short-range entangled systems, the Hall conductance is an integer multiple of e 2 / h . We show that the Hall conductance determines the statistics of flux insertions. For bosonic short-range entangled systems, this implies that the Hall conductance is an even multiple of e 2 / h . Finally, we adapt a proof of quantization of the Thouless charge pump to the case of infinite-volume gapped lattice systems in one dimension.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Quantum bath augmented stochastic nonequilibrium atomistic simulations for molecular heat conduction

Classical molecular dynamics (MD) has been shown to be effective in simulating heat conduction in certain molecular junctions since it inherently takes into account some essential methodological components which are lacking in the quantum Landauer-type transport model, such as many-body full force-field interactions, anharmonicity effects and nonlinear responses for large temperature biases. However, the classical MD reaches its limit in the environments where the quantum effects are significant (e.g. with low-temperatures substrates, presence of extremely high frequency molecular modes). Here, we present an atomistic simulation methodology for molecular heat conduction that incorporates the quantum Bose–Einstein statistics into an “effective temperature” in the form of a modified Langevin equation. We show that the results from such a quasi-classical effective temperature MD method deviates drastically when the baths temperature approaches zero from classical MD simulations and the results converge to the classical ones when the bath approaches the high-temperature limit, which makes the method suitable for full temperature range. In addition, we show that our quasi-classical thermal transport method can be used to model the conducting substrate layout and molecular composition (e.g. anharmonicities, high-frequency modes). Anharmonic models are explicitly simulated via the Morse potential and compared to pure harmonic interactions to show the effects of anharmonicities under quantum colored bath setups. Finally, the chain length dependence of heat conduction is examined for one-dimensional polymer chains placed in between quantum augmented baths.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Generalized Procedure for Improved Accuracy of Thermal Contact Resistance Measurements for Materials With Arbitrary Temperature-Dependent Thermal Conductivity

Thermal contact resistance (TCR) is most commonly measured using one-dimensional steady-state calorimetric techniques. In the experimental methods we utilized, a temperature gradient is applied across two contacting beams and the temperature drop at the interface is inferred from the temperature profiles of the rods that are measured at discrete points. During data analysis, thermal conductivity of the beams is typically taken to be an average value over the temperature range imposed during the experiment. Our generalized theory is presented and accounts for temperature-dependent changes in thermal conductivity. The procedure presented enables accurate measurement of TCR for contacting materials whose thermal conductivity is any arbitrary function of temperature. For example, it is shown that the standard technique yields TCR values that are about 15% below the actual value for two specific examples of copper and silicon contacts. Conversely, the generalized technique predicts TCR values that are within 1% of the actual value. The method is exact when thermal conductivity is known exactly and no other errors are introduced to the system.

42 ENGINEERING↗
DOE OSTI2019

Atomistic basis of opening and conduction in mammalian inward rectifier potassium (Kir2.2) channels

Potassium ion conduction through open potassium channels is essential to control of membrane potentials in all cells. To elucidate the open conformation and hence the mechanism of K + ion conduction in the classic inward rectifier Kir2.2, we introduced a negative charge (G178D) at the crossing point of the inner helix bundle, the location of ligand-dependent gating. This “forced open” mutation generated channels that were active even in the complete absence of phosphatidylinositol-4,5-bisphosphate (PIP 2 ), an otherwise essential ligand for Kir channel opening. Crystal structures were obtained at a resolution of 3.6 Å without PIP 2 bound, or 2.8 Å in complex with PIP 2 . The latter revealed a slight widening at the helix bundle crossing (HBC) through backbone movement. MD simulations showed that subsequent spontaneous wetting of the pore through the HBC gate region allowed K + ion movement across the HBC and conduction through the channel. Further simulations reveal atomistic details of the opening process and highlight the role of pore-lining acidic residues in K + conduction through Kir2 channels.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

A molecular dynamics simulation study of thermal conductivity anisotropy in β-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (β-HMX)

Molecular dynamics (MD) simulations were used to predict the thermal conductivity of β-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (β-HMX) along directions normal to the (011), (110), and (010) crystal planes. These directions were selected based on the measured morphological importance of the corresponding crystal surfaces. A reverse non-equilibrium MD approach was used wherein a constant heat flux is imposed along a prescribed direction and the resulting steady-state temperature gradient determined. The coefficient of thermal conductivity λ is the quotient of heat flux and temperature gradient (i.e. Fourier's law). Finite-size effects and sensitivity to imposed heat flux were investigated. The results reveal a modest dependence of the conductivity on crystal orientation, significant finite-size effects, and low sensitivity to imposed flux so long as the Fourier's law analysis is limited to the spatial interval in the simulation cell for which the temperature gradient is constant. Infinite-length thermal conductivities were estimated by linear regression of λ -1 (L) versus reciprocal cell length L -1 for each direction. The predicted values are systematically larger, but within a factor of two, than most published experimental determinations, the latter of which were obtained for pressed-powder or composite samples rather than oriented single crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

High current carrying and thermal conductive copper-carbon conductors

The surging demand for miniaturized compact devices has generated the need for new metal conductors with high current carrying ampacity, electric and thermal conductivity. Herein, we report carbon-metal conductors that exhibit a high breakdown current density (39% higher than copper) and electrical conductivity (e.g. 63% higher than that of copper at 363 K) in a broad temperature range. The mechanistic studies of thermal conductivity through first-principle modeling show that the multilayer graphene percolation networks efficiently decrease the electron-phonon coupling in the copper-graphene composites, even if phonon modes are activated at a high temperature. These results imply that the copper-based composites have the potential to be the next generation metal conductor with high electrical and thermal conductivity, as well as excellent current-carrying ampacity. More importantly, the developed composite can be deployed in the ink form, making it possible to be utilized by the microelectronic fabrication process.

Zhang, Wei↗