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At least 1,567 records · Page 87

Quantization of interface currents

At the interface of two two-dimensional quantum systems, there may exist interface currents similar to edge currents in quantum Hall systems. It is proved that these interface currents are macroscopically quantized by an integer that is given by the difference of the Chern numbers of the two systems. It is also argued that at the interface between two time-reversal invariant systems with half-integer spin, one of which is trivial and the other non-trivial, there are dissipationless spin-polarized interface currents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic islands and singular currents at rational surfaces in three-dimensional magnetohydrodynamic equilibria

Using the recently developed multiregion, relaxed MHD (MRxMHD) theory, which bridges the gap between Taylor's relaxation theory and ideal MHD, we provide a thorough analytical and numerical proof of the formation of singular currents at rational surfaces in non-axisymmetric ideal MHD equilibria. These include the force-free singular current density represented by a Dirac δ-function, which presumably prevents the formation of islands, and the Pfirsch-Schlüter 1/x singular current, which arises as a result of finite pressure gradient. An analytical model based on linearized MRxMHD is derived that can accurately (1) describe the formation of magnetic islands at resonant rational surfaces, (2) retrieve the ideal MHD limit where magnetic islands are shielded, and (3) compute the subsequent formation of singular currents. The analytical results are benchmarked against numerical simulations carried out with a fully nonlinear implementation of MRxMHD.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current

To analyze the charge pumping (CP) sequence in detail, the source/drain electron current and the substrate hole current under the CP mode of transistors are simultaneously monitored in the time domain. Peaks are observed in both the electron and hole currents, which are, respectively, attributed to the electron emission from the interface defects and to the recombination with holes. The peak caused by the electron emission is found to consist of two components, strongly suggesting that the present time-domain measurement can enable us to resolve different kinds of interface defects. Investigating the correlation between the number of emitted and recombined electrons reveals that only one of the two components contributes to the CP current for the gate-pulse fall time from 6.25 × 10{sup −4} to 1.25 × 10{sup −2} s.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕ{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Long-pulse production of high current negative ion beam by using actively temperature controlled plasma grid for JT-60SA negative ion source

The temperature control system of the large-size plasma grid has been developed to realize the long pulse production of high-current negative ions for JT-60SA. By using this prototype system for the JT-60SA ion source, 15 A negative ions has been sustained for 100 s for the first time, which is three times longer than that obtained in JT-60U. In this system, a high-temperature fluorinated fluid with a high boiling point of 270 degree Celsius is circulated in the cooling channels of the plasma grids (PG) where a cesium (Cs) coverage is formed to enhance the negative ion production. Because the PG temperature control had been applied to only 10% of the extraction area previously, the prototype PG with the full extraction area (110 cm × 45 cm) was developed to increase the negative ion current in this time. In the preliminary results of long pulse productions of high-current negative ions at a Cs conditioning phase, the negative ion production was gradually degraded in the last half of 100 s pulse where the temperature of an arc chamber wall was not saturated. From the spectroscopic measurements, it was found that the Cs flux released from the wall might affect to the negative ion production, which implied the wall temperature should be kept low to control the Cs flux to the PG for the long-pulse high-current production. The obtained results of long-pulse production and the PG temperature control method contributes the design of the ITER ion source.

43 PARTICLE ACCELERATORS↗

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

36 MATERIALS SCIENCE↗

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Meson exchange current (MEC) models in neutrino interaction generators

Understanding of the so-called 2 particle-2 hole (2p-2h) effect is an urgent program in neutrino interaction physics for current and future oscillation experiments. Such processes are believed to be responsible for the event excesses observed by recent neutrino experiments. The 2p-2h effect is dominated by the meson exchange current (MEC), and is accompanied by a 2-nucleon emission from the primary vertex, instead of a single nucleon emission from the charged-current quasi-elastic (CCQE) interaction. Current and future high resolution experiments can potentially nail down this effect. For this reason, there are world wide efforts to model and implement this process in neutrino interaction simulations. In these proceedings, I would like to describe how this channel is modeled in neutrino interaction generators.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Instability of current sheets with a localized accumulation of magnetic flux

The longstanding problem of whether a current sheet with curved magnetic field lines associated with a small “normal” B{sub z} component is stable is investigated using two-dimensional electromagnetic particle-in-cell simulations, employing closed boundary conditions analogous to those normally assumed in energy principle calculations. Energy principle arguments [Sitnov and Schindler, Geophys. Res. Lett. 37, L08102 (2010)] have suggested that an accumulation of magnetic flux at the tailward end of a thin current sheet could produce a tearing instability. Two classes of such current sheet configurations are probed: one with a monotonically increasing B{sub z} profile and the other with a localized B{sub z} “hump.” The former is found to be stable (in 2D) over any reasonable time scale, while the latter is prone to an ideal-like instability that shifts the hump peak in the direction of the curvature normal and erodes the field on the opposite side. The growth rate of this instability is smaller by an order of magnitude than previous suggestions of an instability in an open system. An example is given that suggests that such an unstable hump configuration is unlikely to be produced by external driving of a current sheet with no B{sub z} accumulation even in the presence of open boundary conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Numerical studies of electron cyclotron wave current drive on HL-2A tokamak

The electron cyclotron wave (ECW) current drive (CD) for the HL-2A tokamak is investigated numerically with a new ray-tracing and Fokker-Planck code. The code is benchmarked with other well-tested linear and quasilinear codes and is then used to study the electron cyclotron current drive on the HL-2A tokamak. The wave propagation, power deposition, and driven-current profiles are presented. The effect of electron trapping is also assessed. It is found that quasilinear effects are negligible at the present ECW power levels and that when both waves are injected at an angle of 20° on the plasma equatorial plane, the CD efficiency for the HL-2A saturates at ∼0.029 × 10{sup 20 }A/W/m{sup 2} and ∼0.020 × 10{sup 20 }A/W/m{sup 2} for the 0.5 MW/68 GHz first harmonic ordinary (O1) and 1 MW/140 GHz second harmonic extraordinary (X2) modes, respectively. The effects of the plasma density, temperature, and wave-launching position on the driven current are also investigated analytically and numerically.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. From the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Static property and current-driven precession of 2π-vortex in nano-disk with Dzyaloshinskii-Moriya interaction

An interesting type of skyrmion-like spin texture, 2π-vortex, is obtained in a thin nano-disk with Dzyaloshinskii-Moriya interaction. We have simulated the existence of 2π-vortex by micromagnetic method. Furthermore, the spin polarized current is introduced in order to drive the motion of 2π-vortex in a nano-disk with diameter 2 R = 140 nm. When the current density matches with the current injection area, 2π-vortex soon reaches a stable precession (3∼4 ns). The relationship between the precession frequency of 2π-vortex and the current density is almost linear. It may have potential use in spin torque nano-oscillators.

36 MATERIALS SCIENCE↗

Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation

Strong spin-orbit coupling in non-magnetic heavy metals has been shown to lead to large spin currents flowing transverse to a charge current in such a metal wire. This in turn leads to the buildup of a net spin accumulation at the lateral surfaces of the wire. Spin-orbit torque effects enable the use of the accumulated spins to exert useful magnetic torques on adjacent magnetic layers in spintronic devices. We report the direct detection of spin accumulation at the free surface of nonmagnetic metal films using magnetization-induced optical surface second harmonic generation. The technique is applied to probe the current induced surface spin accumulation in various heavy metals such as Pt, β-Ta, and Au with high sensitivity. The sensitivity of the technique enables us to measure the time dynamics on a sub-ns time scale of the spin accumulation arising from a short current pulse. The ability of optical surface second harmonic generation to probe interfaces suggests that this technique will also be useful for studying the dynamics of spin accumulation and transport across interfaces between non-magnetic and ferromagnetic materials, where spin-orbit torque effects are of considerable interest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modeling of high harmonic fast wave current drive on EAST tokamak

High harmonic fast waves (HHFW) are among the candidates for non-inductive current drive (CD), which is essential for long-pulse or steady-state operation of tokamaks. Current driven with HHFW in EAST tokamak plasmas is numerically studied. The HHFW CD efficiency is found to increase non-monotonically with the wave frequency, and this phenomenon is attributed to the multi-pass absorption of HHFW. The sensitivity of CD efficiency to the value of the parallel refraction index of the launched wave is confirmed. The quasilinear effects, assessed as significant in HHFW current drive with the GENRAY/CQL3D package, cause a significant increase in CD efficiency as RF power is increased, which is very different from helicon current drive. Simulations for a range of toroidal dc electric fields, in combination with a range of fast wave powers, are also presented and indicate that the presence of the DC field can also enhance the CD efficiency.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High current DC negative ion source for cyclotron

A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H{sup −} beam of 10 mA and D{sup −} beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H{sup −} beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H{sup −} current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H{sup −} production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H{sup −} current dependence on the arc power.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetectors

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F 1 F 2 |=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specific dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗