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At least 1,549 records · Page 86

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NASA NTRS1986

Etching Silicon Films With Xenon Difluoride

Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

Hecht, M. H.↗

NASA NTRS2000

Quantum Corrections to the 'Atomistic' MOSFET Simulations

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Asenov, Asen↗

NASA NTRS1985

Millimeter-scale variations of stable isotope abundances in carbonates from banded iron-formations in the Hamersley Group of Western Australia

Several diamond drill cores from formations within the Hamersley Group of Western Australia have been studied for evidence of short-range variations in the isotopic compositions of the carbonates. For a set of 32 adjacent microbands analyzed in a specimen from the Marra Mamba Iron Formation, carbon isotope compositions of individual microbands ranged from -2.8 to -19.8 per mil compared to PDB and oxygen isotope compositions ranged from 10.2 to 20.8 per mil compared to SMOW. A pattern of alternating abundances was present, with the average isotopic contrasts between adjacent microbands being 3.0 per mil for carbon and 3.1 per mil for oxygen. Similar results were obtained for a suite of 34 microbands (in four groups) from the Bruno's Band unit of the Mount Sylvia Formation. Difficulties were experienced in preparing samples of single microbands from the Dales Gorge Member of the Brockman Iron Formation, but overall isotopic compositions were in good agreement with values reported by previous authors. Chemical analyses showed that isotopically light carbon and oxygen were correlated with increased concentrations of iron. The preservation of these millimeter-scale variations in isotopic abundances is interpreted as inconsistent with a metamorphic origin for the isotopically light carbon in the BIF carbonates. A biological origin is favored for the correlated variations in 13C and Fe, and it is suggested that the 13C-depleted carbonates may derive either from fermentative metabolism or from anaerobic respiration. A model is presented in which these processes occur near the sediment-water interface and are coupled with an initial oxidative precipitation of the iron.

NASA Program Exobiology↗

NASA NTRS2019

Low-Loss Microstrip Transmission Line Fabricated with Improved Liftoff Process

The µ-Spec integrated spectrometer operating at ~500 GHz, employs thin film superconducting Nb microstrip transmission lines deposited directly on a thin (450 nm) single-crystal silicon dielectric. This single-crystal silicon layer is chosen as the dielectric layer due to its low intrinsic loss, with the goal of achieving both high- efficiency and precise phase control in a compact spectrometer architecture. To avoid roughening or etching through the thin single-crystal silicon dielectric a liftoff technique was developed for patterning these microstrip transmission lines and ground plane structures. This two- layer liftoff process was designed for use with sputter deposition and resulted in a US patent. Although this original technique provided precise control of linewidth, results of initial prototype spectrometer devices and separate diagnostic co-planer waveguide resonator devices showed that unexpected loss was being introduced due to the lift-off process. This extra loss was believed to be due to the “tails” (thin tapered regions) at the edge of the metal traces resulting from the sputtering process, as well as an amorphous oxide layer at the Nb-Si interface. We have since demonstrated an improved lift-off technique, which provides a clean metal-Si interface and removes the loss-inducing tails by a two-step selective etching method. This results in a decrease in microwave loss by more than an order of magnitude when measured in co-planar waveguide microwave resonator structures. We present these microwave test results and also SEM and TEM images of the microstrip interfaces and edge profiles before and after application of the improved process.

Hess, Larry A.↗

DOE OSTI2015

Reduction-oxidation Enabled Glass-ceramics to Stainless Steel Bonding Part II interfacial bonding analysis

Among glass-ceramic compositions modified with a variety of oxidants (AgO, FeO, NiO, PbO, SnO, CuO, CoO, MoO 3 and WO 3 ) only CuO and CoO doped glass-ceramics showed existence of bonding oxides through reduction-oxidation (redox) at the GC-SS interface. The CuO-modified glass-ceramics demonstrate the formation of a continuous layer of strong bonding Cr 2 O 3 at the interface in low partial oxygen (PO 2 ) atmosphere. However, in a local reducing atmosphere, the CuO is preferentially reduced at the surface of glass-ceramic rather than the GC-SS interface for redox. The CoO-modified glass-ceramics demonstrate improved GC-SS bonding. But the low mobility of Co ++ ions in the GC limited the amount of CoO that can diffuse to and participate in redox at the interface.

Dai, Steve Xunhu↗

DOE OSTI2022

Rare-earth doped thermal barrier coating bond coat for thermally grown oxide luminescence sensing

A thermal barrier coated component, such as a turbine blade formed from a superalloy substrate, includes a thermal barrier coating applied onto the substrate. A metallic bond coat layer is on the substrate and includes rare-earth luminescent dopants. A ceramic top coat layer is on the bond coat layer. A temperature sensing thermally grown oxide (TGO) layer is formed at the interface of the bond coat layer and ceramic top coat layer. The temperature sensing TGO layer includes grown rare-earth luminescent ions migrated from the metallic bond coat layer in an amount sufficient to enable luminescence sensing of the TGO layer for real-time phosphor thermometry temperature measurements at the TGO layer.

Fouliard, Quentin↗

DOE OSTI2023

Method for forming a temperature sensing layer within a thermal barrier coating

Fouliard, Quentin↗

DOE OSTI2014

Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (∼10{sup 4} A/W 450 nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Epitaxial growth of VO{sub 2} by periodic annealing

We report the growth of ultrathin VO{sub 2} films on rutile TiO{sub 2} (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO{sub 2} via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Giant switchable Rashba effect in oxide heterostructures

One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Adsorption and activation of CO 2 on Pt/CeOx/TiO 2 (110): Role of the Pt-CeO x interface

The adsorption and dissociation of CO 2 on TiO 2 (110), CeO x /TiO 2 (110) and Pt/CeO x /TiO 2 (110) surfaces has been examined using Ambient Pressure X-ray Photoelectron Spectroscopy (AP-XPS). The substrates under study exhibited different degrees of complexity which were tested for the binding of the adsorbate and the cleavage of C-O bonds. The surfaces were prepared by depositing CeO x (0.1 ML) onto TiO 2 (110) to form a mixed oxide support, onto which Pt nanoparticles (0.2 ML) were deposited. This configuration yields a complex set of interfaces between metal and oxides and we have systematically titrated the active role of each component (Pt 4f, Ce 3d and Ti 2p regions) and the arising surface intermediates (C 1s and O 1s regions). CO 2 barely bonds to stoichiometric TiO 2 (110). It heals oxygen vacancies of this oxide surface (CO 2,gas → CO gas + O a ) and does not form stable carbonates. A stable carbonate was seen upon adsorption of CO 2 on CeO x /TiO 2 (110) and on this type of substrate the adsorbate also removed O vacancies leading to the oxidation of Ti 3+ and Ce 3+ sites. Pt nanoparticles dispersed on CeO x /TiO 2 (110) were highly effective for the binding and dissociation of CO 2 , with the formation of CO 3 , CO, C and CH x species on the Pt/CeO x /TiO 2 (110) system. The results of theoretical calculations based on density-functional theory (DFT) show that Pt/CeOx/TiO2(110) binds CO2 much stronger than surfaces of bulk platinum {(111), (100), (110)} or other late transition metals. On a Pt-CeO x interface, the molecule adsorbs with a bent configuration (~ 130° O-C-O bond angle) and with a substantial elongation (~ 0.1 Å) of the C-O bonds, facilitating its transformation into high value chemicals.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Heteroepitaxial registry and band structures at the polar-to-polar STO/ZnO($000\bar{1}$) interfaces

The interface between ZnO and SrTiO 3 (STO) provides a paradigm for combining perovskite oxides and wurtzite-structure semiconductors. However, the heteroepitaxial and energy band structures of the polar-to-polar STO/ZnO($000\bar{1}$) interfaces has rarely been studied. In this study, it is shown that the STO films prepared on the ZnO($000\bar{1}$) substrate by pulsed laser deposition possess [011]STO and [111]STO azimuth orientations, which exhibit three- and two-fold rotation domains respectively, as demonstrated by X-ray diffraction and transmission electron microscopy. The band structures of the STO(011)/ZnO($000\bar{1}$) and STO(111)/ZnO($000\bar{1}$) interfaces are bending downward as shown in the I-V characteristic spectra and first principle calculations. These results are different from the single orientation ZnO films grown on STO-(011) and -(111) substrate, as reported in previous literatures, showing the heteroepitaxial asymmetry between STO/ZnO and ZnO/STO interfaces. This work presents an approach towards the physical modeling of combinations between perovskite oxides and wurtzite-structure semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

Interface Engineered Room‐Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Not Available

36 MATERIALS SCIENCE↗

NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗

DOE OSTI2015

High-resolution chemical analysis by STEM-EELS of nanosized oxide particles in a mechanically-alloyed FeCrAl intermetallic

The chemical composition of nanosized oxides has been analysed in a mechanically-alloyed (MA) iron–chromium–aluminium intermetallic containing yttria additions using an aberration-corrected, high-resolution scanning transmission electron microscope (STEM). The oxide particles are seen to contain yttrium and oxygen only, but very little of the matrix metallic elements, while the matrix in the immediate vicinity shows a very low iron content. Possible reasons for the change of matrix composition outside the particle-matrix interface are discussed. - Highlights: • High-resolution chemical analysis of oxide particles was performed using STEM-EELS. • Oxide particles contain Y and O but essentially no elements from the Fe–Cr–Al matrix. • The matrix immediately outside the particles appears to be depleted in Fe. • Diffusion of Y during particle growth possibly transports vacancies to the interface.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact

We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps with a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Vibrational sum frequency generation spectroscopy reveals the inertness of chromium oxide (001) surfaces

Nanoengineered metal oxides such as Cr(III)-oxide (chromia) films have diverse potential applications in corrosion inhibition, remediation, energy generation, catalysis, data storage, and biological and environmental systems. Concerns about material degradation or oxidation to toxic chromate necessitate an understanding of chromia/aqueous interfaces, beginning with their hydroxylation and hydration behavior. Vibrational sum-frequency generation spectroscopy (vSFG) provides specific molecular-level information about water at the oxide/aqueous junction with high surface selectivity. To overcome the strong absorber problem typical of certain metal oxides in the UV–visible range during nonlinear optical studies, we employed molecular beam epitaxy to deposit transparent, epitaxial nanofilms of Cr 2 O 3 with (001) crystalline orientation on sapphire (Al 2 O 3 (001)) substrates, as confirmed by atomic force microscopy and X-ray diffraction. vSFG spectra of the air and water interfaces of the Cr 2 O 3 (001) films reveal hydroxyl features corresponding to both dissociated and molecular water on the surface. In contrast to the dangling hydroxyls found on the bare Al 2 O 3 (001) substrate, the hydroxyl groups on the deposited Cr 2 O 3 (001) nanofilm do not readily undergo isotopic H/D exchange when exposed to varying forms of D 2 O under ambient conditions. When considering the chemistries of the corresponding trivalent cations in aqueous solution, the finding is at variance with their similar acidities and proton exchange dynamics but consistent with markedly slower inner-sphere water ligand exchange of hexaquo Cr 3+ . This finding challenges the idea that proton and water exchange at the water/Cr₂O₃(001) interface are solely correlated, driven by the strength of metal-bridging oxygen bonds and surface hydroxyl distribution, without direct causation.

Boamah-Agyemang, Mavis D. [Pacific Northwest Natio↗