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At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Experimental investigations on channelized coplanar waveguide

A new variant of coplanar waveguide (CPW) which was termed channelized coplanar waveguide (CCPW) is presented. Measured propagation characteristics for CCPW such as epsilon(eff) and unloaded Q as a function of geometrical parameters and frequency are presented. The measured and modeled epsilon(eff) are also compared. Equivalent circuit model element values are presented for a CCPW open circuit and a CCPW right angle bend. A CCPW matched T-junction, matched 1:3 junction, and a novel coax-to-CCPW in-phase, N-way, radial power divider are also demonstrated.

Simons, Rainee N.↗
NASA NTRS1989

Gallium arsenide solar cell radiation damage study

A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response.

Maurer, R. H.↗
NASA NTRS1989

Concepts for thin-film GaAs concentrator cells

The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

Spitzer, M. B.↗
NASA NTRS1990

Mobility power flow analysis of an L-shaped plate structure subjected to distributed loading

An analytical investigation based in the Mobility Power Flow (MPF) method is presented for the determination of the vibrational response and power flow for two coupled flat plate structures in an L-shaped configuration, subjected to distributed excitation. The principle of the MPF method consists of dividing the global structure into a series of subsystems coupled together using mobility functions. Each separate subsystem is analyzed independently to determine the structural mobility functions for the junction and excitation locations. The mobility functions, together with the characteristics of the junction between the subsystems, are then used to determine the response of the global structure and the MPF. In the considered coupled plate structure, MPF expressions are derived for distributed mechanical excitation which is independent of the structure response. However using a similar approach with some modifications excitation by an acoustic plane wave can be considered. Some modifications are required to deal with the latter case are necessary because the forces (acoustic pressure) acting on the structure are dependent on the response of the structure due to the presence of the scattered pressure.

Cuschieri, J. M.↗
NASA NTRS1990

MBE HgCdTe heterostructure detectors

HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

Schulman, Joel N.↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗
NASA NTRS1991

Space Photovoltaic Research and Technology, 1989

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Source record↗
NASA NTRS1991

Determination of series resistance of indium phosphide solar cells

The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

Jain, Raj K.↗
NASA NTRS1990

Future mission opportunities and requirements for advanced space photovoltaic energy conversion technology

The variety of potential future missions under consideration by NASA will impose a broad range of requirements on space solar arrays, and mandates the development of new solar cells which can offer a wide range of capabilities to mission planners. Major advances in performance have recently been achieved at several laboratories in a variety of solar cell types. Many of those recent advances are reviewed, the areas are examined where possible improvements are yet to be made, and the requirements are discussed that must be met by advanced solar cell if they are to be used in space. The solar cells of interest include single and multiple junction cells which are fabricated from single crystal, polycrystalline and amorphous materials. Single crystal cells on foreign substrates, thin film single crystal cells on superstrates, and multiple junction cells which are either mechanically stacked, monolithically grown, or hybrid structures incorporating both techniques are discussed. Advanced concentrator array technology for space applications is described, and the status of thin film, flexible solar array blanket technology is reported.

Flood, Dennis J.↗
NASA NTRS1991

Planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths

Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

Bishop, W. L.↗
NASA NTRS1991

Flight test and numerical simulation of transonic flow around YAV-8B Harrier II wing

A computational fluid dynamics (CFD) method is used to study the aerodynamics of the YAV-8B Harrier II wing in the transonic region. A numerical procedure is developed to compute the flow field around the complicated wing-pylon-fairing geometry. The surface definition of the wing and pylons were obtained from direct measurement using theodolite triangulation. A thin-layer Navier-Stokes code with the Chimera technique is used to compute flow solutions. The computed pressure distributions at several span stations are compared with flight test data and show good agreement. Computed results are correlated with flight test data that show the flow is severely separated in the vicinity of the wing-pylon junction. Analysis shows that shock waves are induced by pylon swaybrace fairings, that the flow separation is much stronger at the outboard pylon and that the separation is caused mainly by the crossflow passing the geometry of wing-pylon junction.

Gea, Lie-Mine↗
NASA NTRS1990

X-ray spectroscopic instrumentation for the 21st century

Several technologies being developed for high resolution X-ray spectroscopy are compared to determine the most suitable applications for each. Nondispersive cryogenic technology is considered by means of devices such as microcalorimeters and superconducting tunnel-junction detectors, and dispersive technologies are represented by crystal diffractors, transmission gratings and reflection gratings. Calorimeters and superconducting tunnel-junction conductors are found to be suitable for high energies while reflection gratings are more effective at lower energies. In general, however, the selected technology depends primarily on the particular implementation. Parameters such as launch capability, constraints, and scientific drivers are the guiding forces for selecting a particular device.

Kahn, Steven M.↗
NASA NTRS1992

Double-Current-Confined CSP Laser

Improved channeled-substrate-planar (CSP) lasers that emit at wavelengths between 860 and 880 nm grown by liquid-phase epitaxy (LPE). Exhibit record high output powers and efficiencies, attained without sacrifice of desirable characteristics of lasers. In fabrication, second reverse-bias p/n junction incorporated to reduce required current. By incorporating two reverse-bias junctions in CSP structure, one doubly confines current. Lasers used eventually as sources of light in intersatellite communications systems and, specifically, NASA Advanced Communications Technology Satellite (ACTS) System.

Connolly, John C.↗
NASA NTRS1991

Measurement of frequency response in short thermocouple wires

Experimental measurements are made for the steady-state frequency response of a supported thermocouple wire. In particular, the effects of axial heat conduction are demonstrated for both a supported one material wire (type K) and a two material wire (type T) with unequal material properties across the junction. The data for the amplitude ratio and phase angle are correlated to within 10 percent with the theoretical predictions of Fralick and Forney (1991). This is accomplished by choosing a natural frequency omega(sub n) for the wire data to correlate the first order response at large gas temperature frequencies. It is found that a large bead size, however, will increase the amplitude ratio at low frequencies but decreas the natural frequency of the wire. The phase angle data are also distorted for imperfect junctions.

Forney, L. J.↗
NASA NTRS1992

Monolithic and mechanical multijunction space solar cells

High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

Jain, Raj K.↗
NASA NTRS1992

Atla Regio, Venus: Geology and origin of a major equatorial volcanic rise

Regional volcanic rises form a major part of the highlands in the equatorial region of Venus. These broad domical uplands, 1000 to 3000 km across, contain centers of volcanism forming large edifices and are associated with extension and rifting. Two classes of rises are observed: (1) those that are dominated by tectonism, acting as major centers for converging rifts such as Beta Regio and Alta Regio, and are termed tectonic junctions; and (2) those forming uplands characterized primarily by large-scale volcanism forming edifices. Western Eistla Regio and Bell Regio, where zones of extension and rifting are less developed. Within this second class of features the edifices are typically found at the end of a single rift, or are associated with a linear belt of deformation. We examine the geologic characteristics of the tectonic junction at Alta Regio, concentrating on documenting the styles of volcanism and assessing mechanisms for the formation of regional topography.

Senske, D. A.↗
NASA NTRS1992

A fixed tuned broadband matching structure for submillimeter SIS receivers

We have designed, fabricated, and tested a quasi-optical spiral antenna mixer with a Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral antenna to couple to the radiation field, as previously done with Pb based devices, as well as a newly designed matching circuit. This matching circuit is a relatively complex structure requiring several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device predicted the measured bandwidth to within 8 percent, making scale model measurements unnecessary. We have obtained a good match from 210 GHz to 460 GHz between the antenna and a relatively large area (1.25 by 1.25 sq microns) tunnel junction with omega R(sub N) C approx. = 2 - 4.4. This compares to simple inductive stubs that attain only a few percent of total bandwidth in the submillimeter band or inductively tuned SIS arrays with an upper limit of operating frequencies well below the submillimeter band. Noise temperatures were measured at 345 GHz, 426 GHz, and 492 GHz yielding double sideband noise temperatures at 200 K, 220 K, and 500 K, respectively.

Buettgenbach, Thomas H.↗
NASA NTRS1992

Onset of dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits.

Javadi, H. H. S.↗