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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Nickel Interlayer for Improved Silver Complex Inks Metallization in GaAs Photovoltaic Devices

Large areas of III-V photovoltaic panels are essential to supplying operational energy for a growing demand of satellites of strategic importance to the United States military, covering a range of applications. High fabrication costs and low manufacturing throughput are key barriers to meeting the necessary supply, which can in turn jeopardize mission success. At the device level, metallization based on printing of complex metal inks has attracted significant research interest due to its potential to substantially reduce processing costs and increase throughput while achieving electrical performance comparable to those of conventional metallization schemes. For GaAs photovoltaic devices, however, reliable electrical contacting remains challenging due to the formation of an interfacial oxide layer at the metal-semiconductor interface. This oxide barrier severely limits current extraction from the PV absorber, resulting in unacceptably high contact resistance. In this study, we report the introduction of a reactive nickel (Ni) interfacial layer between the silver metal fingers and the GaAs substrate to suppress oxide formation while maintaining a low-resistance electrical interface, and show performance data from fully fabricated GaAs devices incorporating the Ni interlayer. These results demonstrate the potential of reactive Ni ink as an effective interfacial layer for improved electrical contacting in low-cost PV metallization schemes.

14 SOLAR ENERGY↗
DOE OSTI2026

A Relief Zone Architecture for Enhanced Durability of Ultrathin Membranes in Electrochemical Conversion Devices

Premature cell failures in electrochemical conversion systems often result when membrane electrode assemblies (MEAs) are prepared with ultra-thin (= 15 micrometer-thick) polymer electrolyte membranes (PEMs). These high-performance PEMs are susceptible to mechanical degradation from stress concentrations arising from component and device-level integration. Herein, a relief zone was developed to mitigate mechanical degradation by alleviating excess and non-uniform compression across the active area. Relief zones, created through the ablation of carbonaceous diffusion material achieves a seamless adaptation across a range of MEA dimensions and electrochemical applications without need for costly hardware modifications. This concept was demonstrated using fuel cells as a case study. Accelerated stress test (AST) validations yielded a 6-fold improvement for MEAs prepared with relief zones (i.e., lifetime approximately 1500 h) compared to those fabricated using conventional edge-protection techniques, showcasing the utility of this technique in decoupling integration and device-level engineering effects from intrinsic material limitations for durable electrochemical devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Multi-device Studies of Pedestal Physics and Confinement in the I-mode Regime

This paper describes joint ITPA studies of the I-mode regime, which features an edge thermal barrier but with L-mode-like particle and impurity transport, and without ELMs. The regime has been demonstrated on Alcator C-Mod, ASDEX Upgrade and DIII-D tokamaks, over a wide range of device parameters and pedestal conditions, including low collisionality. Access to I-mode is independent of heating method (neutral beam injection, ICRH and/or ECRH). Normalized energy confinement H98y,2 ≥ 1 has been achieved for a range of 3≤q95≤4.9 and scales favourably with power. Changes in turbulence in the pedestal region accompany the transition from L-mode to I-mode. The L-I threshold increases with plasma density and current, and with device size, but weakly with BT. The upper limit of power for I-modes increases with toroidal field, and is largest on Alcator C-Mod at B > 5 T. Issues for extrapolation to ITER and other future fusion devices are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Metamaterial-Inspired Vacuum Electron Devices and Accelerators

Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. Furthermore, MTM-inspired devices have promising applications in areas such as radar, communication, electronic warfare, microwave heating, and imaging.

43 PARTICLE ACCELERATORS↗
NASA NTRS1968

Electronic load for testing power generating devices

Instrument tests various electric power generating devices by connecting the devices to the input of the load and comparing their outputs with a reference voltage. The load automatically adjusts until voltage output of the power generating device matches the reference.

Friedman, E. B.↗
NASA NTRS1972

Flexible thermal device

Fabrication of expansion joint, vibration isolator device with sufficient cross sectional area for high thermal conductivity is discussed. Device consists of multiple layers of metal foil which may be designed to meet specific applications. Thermodynamic properties of the device and illustration of construction are provided.

Wallace, S. D.↗
NASA NTRS1971

Study of bonding methods for flip chip and beam leaded devices

The results are presented of a comprehensive study and evaluation for the bonding of flip chip and beam leaded devices onto hybrid microcircuit substrates used in high reliability space applications. The program included the evaluation of aluminum flip chips, solder (silver/tin) bump chips, gold beam leaded devices, and aluminum beam leaded devices.

Rudd, H. C.↗
NASA NTRS1972

Hardening electronic devices against very high total dose radiation environments

The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.

Buchanan, B.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1971

Suppression of combustion oscillations with mechanical damping devices

Nonarray absorbing devices were investigated for use in rocket thrust chambers as instability suppressors. A theory for designing absorbing devices suitable for rocket application is derived, and a nonarray computer program is developed. The experimental program used to verify the theory is discussed. It is concluded that individual acoustical devices can be designed for maximum energy absorption, and it is recommended that single resonators be designed so that the ratio of the aperture diameter to the product of the quarter-wave length and cavity backing depth is less than one.

Source record↗
NASA NTRS1972

Evaluation of electroexplosive devices by nondestructive test techniques and impulsive waveform firings

Special requirements of the space industry for more detailed knowledge of the quality and reliability of each electroexplosive device (EED) selected for use aboard a spacecraft are described. Statistical methods do not practically demonstrate the high reliability needed. To close this gap, nondestructive test techniques and instrumentation for 1-W/1-A no-fire devices have been developed. Several lots of squibs have been evaluated using these techniques and instrumentation. They yield data as to the quality and normal behavior of each electroexplosive device without firing or degrading the unit. Performance data were obtained by initiating the EED's with an impulsive waveform and sensing the initiation characteristics, sensitivity, and output.

Menichelli, V. J.↗
NASA NTRS1972

A new device for communication systems

A communication device and modulation capability were developed for the transmission of digital data or voices from point to point. This device is a fast-switching phase coherent frequency synthesizer. When this synthesizer is appropriately incorporated in a communication system it can provide interference resistance, multiple-user capability, user identification, ranging, navigation, Doppler correction, and digitized communication (voice and data). The application of this device to aircraft/airport complex and law enforcement communications is discussed.

Beck, R. R.↗
NASA NTRS1973

A fluidic device for measuring constituent masses of a flowing binary gas mixture

A continuous reading mass flow device was developed to measure the component flow of a binary gas mixture. The basic components of the device are a fluidic humidity sensor and a specially designed flow calorimeter. These components provide readings of gas mixture ratio, mixture heat capacity, heat dissipated by the calorimeter and the gas temperature rise across the calorimeter. These parameter values, applied in the general definitions of specific heat capacity and the heat capacity of a gas mixture, produce calculated component flow rates of the mixture being metered. A test program was conducted to evaluate both the steady state and dynamic performance of the device.

Prokopius, P. R.↗
NASA NTRS1972

Optical to optical interface device

The development, fabrication, and testing of a preliminary model of an optical-to-optical (noncoherent-to-coherent) interface device for use in coherent optical parallel processing systems are described. The developed device demonstrates a capability for accepting as an input a scene illuminated by a noncoherent radiation source and providing as an output a coherent light beam spatially modulated to represent the original noncoherent scene. The converter device developed under this contract employs a Pockels readout optical modulator (PROM). This is a photosensitive electro-optic element which can sense and electrostatically store optical images. The stored images can be simultaneously or subsequently readout optically by utilizing the electrostatic storage pattern to control an electro-optic light modulating property of the PROM. The readout process is parallel as no scanning mechanism is required. The PROM provides the functions of optical image sensing, modulation, and storage in a single active material.

Oliver, D. S.↗
NASA NTRS1972

Development of termination and utilization concepts for flat conductor cables. Volume 1: Development of low profile flat conductor cable connecting device and permanent splice

The development of low-profile flat conductor cable (FCC) connecting device and FCC permanent splice methods are discussed. The design goal for the low-profile connecting device was to mate and unmate FCC harness to a typical spacecraft component with a maximum height of 3/8 in. The results indicate that the design, fabrication, and processing of the low-profile connecting device are feasible and practical. Some redesign will be required to achieve the goal of 3/8 in. Also, failures were experienced subsequent to salt spray and humidity exposure. Five different FCC permanent splice methods were considered. Subsequent to evaluation of these five methods, two design concepts were chosen for development tests.

Source record↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1973

Noncontacting devices to indicate deflection and vibration of turbopump internal rotating parts

The research is reported which was conducted to develop devices for measuring vibrations and deflections of parts, such as impellers, shafts, turbine wheels, and inducers in operating turbopumps. Three devices were developed to the breadboard stage: ultrasonic Doppler transducer, flash X-rays, and light-pipe reflectance. It was found that the X-ray technique is applicable to the shaft assembly and the turbine seal of the J-2 pump, and the light-pipe-reflectance device appears to be ideal for cryogenic pump sections.

Hamilton, D. B.↗