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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC

Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal perfection than do 3C-SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3C-SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3C-SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Migration of defect clusters and xenon-vacancy clusters in uranium dioxide

The possible transition states, minimum energy paths and migration mechanisms of defect clusters and xenon-vacancy defect clusters in uranium dioxide have been investigated using the dimer and the nudged elastic-band methods. The nearby O atom can easily hop into the oxygen vacancy position by overcoming a small energy barrier, which is much lower than that for the migration of a uranium vacancy. A simulation for a vacancy cluster consisting of two oxygen vacancies reveals that the energy barrier of the divacancy migration tends to decrease with increasing the separation distance of divacancy. For an oxygen interstitial, the migration barrier for the hopping mechanism is almost three times larger than that for the exchange mechanism. Xe moving between two interstitial sites is unlikely a dominant migration mechanism considering the higher energy barrier. A net migration process of a Xe-vacancy pair containing an oxygen vacancy and a xenon interstitial is identified by the NEB method. We expect the oxygen vacancy-assisted migration mechanism to possibly lead to a long distance migration of the Xe interstitials in UO2. The migration of defect clusters involving Xe substitution indicates that Xe atom migrating away from the uranium vacancy site is difficult.

Defect clusters↗
DOE OSTI2014

Defects in Epitaxial Lift-Off Thin Si Films/Wafers and Their Influence on the Solar Cell Performance

In this paper, we will describe the nature of defects and impurities in thick epitaxial-Si layers and their influence on the cell efficiency. These wafers have very low average dislocation density. Stacking faults (SFs) are the main defect in epi layers. They can occur in many configurations - be isolated, intersecting, and nested. When nested, they can be accompanied by formation of coherent twins resulting in dendritic growth, with pyramids protruding out of the wafer surface. Such pyramids create large local stresses and punch out dislocations. The main mechanism of dislocation formation is through pyramids. Stacking faults degrade solar cell performance. Analyses of the solar cells have revealed that the nested SFs have a controlling effect on the solar cell performance. A well-controlled growth can minimize defect generation and produce wafers that can yield cell efficiencies close to 20%.

14 SOLAR ENERGY↗
DOE OSTI2014

Universality of phase transition dynamics: topological defects from symmetry breaking

In the course of a non-equilibrium continuous phase transition, the dynamics ceases to be adiabatic in the vicinity of the critical point as a result of the critical slowing down (the divergence of the relaxation time in the neighborhood of the critical point). This enforces a local choice of the broken symmetry and can lead to the formation of topological defects. The Kibble-Zurek mechanism (KZM) was developed to describe the associated nonequilibrium dynamics and to estimate the density of defects as a function of the quench rate through the transition. During recent years, several new experiments investigating formation of defects in phase transitions induced by a quench both in classical and quantum mechanical systems were carried out. At the same time, some established results were called into question. We review and analyze the Kibble-Zurek mechanism focusing in particular on this surge of activity, and suggest possible directions for further progress.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

In-situ X-ray Nanocharacterization of Defect Kinetics in Chalcogenide Solar Cell Materials

For decades the optimization of polycrystalline absorbers has been done using an Edisonian approach, where trial and error and complex design of experiments in large parameter spaces have driven efficiencies to the record values we see today – CIGS at 22.5%, 22.1% for CdTe, 21.3% for high purity multi-crystalline silicon. Appropriate growth parameters are critical to ensure good quality crystals with low concentration of structural defects - low dislocation density and large grain sizes. However, to bridge the gap between the efficiencies today and the fundamental Shockley-Queisser limit for these materials a much more fundamental understanding of the role and interaction between composition, structure, defect density and electrical properties is required. In recent years multiple novel characterization techniques have shown the potential that nanoscale characterization can have in deciphering the composition of grain boundaries in materials like CIGS and CdTe. However, high resolution has come at the cost of small sampling areas and number of specimens, making it extremely difficult to draw conclusions based on the characteristic small sampling sizes. The missing links thus far have been: (1) the lack of statistical meaningfulness of the nanosclae studies and (2) the direct correlation of compositional variations to electrical performance with nanoscale resolution. In this work we present the use of synchrotron-based nano-X-ray fluorescence microscopy (nano-XRF), x-ray absorption nanospectroscopy (nano-XAS) coupled with nano-x-ray beam induced current (nano-XBIC) as ideal tools for investigating elemental, chemical and electrical properties of large areas of solar cell materials at the sub-micron scale with very high sensitivity. We show how the technique can provide statistical valuable information regarding the elemental segregation in CIGS and the direct correlation to current collection. For example, we demonstrate that Cu and Ga (and with that, CGI and GGI) correlate positively, and In negatively with charge collection efficiency for cells with low Ga content, both at grain boundaries and in grain cores. For cells with high Ga content, the charge collection efficiency depends to much lesser extent on the elemental distribution. The objective is three folded: (1) develop an x-ray in-situ microscopy capability to simulate growth and processing conditions, (2) apply it to elucidate performance-governing defect kinetics in chalcogenide solar cell materials, and (3) to study approaches to engineer materials from the nanoscale up. The development of these capabilities will enable experimental characterization to take place under actual processing and operating conditions and it will have impact well beyond the proposed research, enabling future studies on a large variety of materials system where electronic properties depend on underlying structural or chemical inhomogeneities.

14 SOLAR ENERGY↗
DOE OSTI2019

Molecular and Structural Probes of Defect States in Quantum Dots for Photoconversion

The objective of this research on quantum confined nanocrystals is to develop a fundamental understanding of the chemical properties of ligand-nanocrystal interfaces that will enable the control of defect-driven charge recombination in these systems. With this control, quantum confined nanocrystals may represent a cost effective means of absorbing light over the full solar spectrum for the production of electricity and fuels from sunlight. New spectroscopic techniques will be developed in this project that allow a direct correlation of molecular structural information about the ligand-nanocrystal interactions with the corresponding density and energetic distribution of surface defects and the influence that these defects have on charge transport and recombination. The insight that is gained will provide a molecular basis for the rational development of novel pathways for the of use quantum dots in systems for solar energy transduction.

14 SOLAR ENERGY↗
DOE OSTI2021

Localized Defect Detection from Spatially Mapped, In-Situ Process Data With Machine Learning

In powder bed fusion additive manufacturing, machines are often equipped with in-situ sensors to monitor the build environment as well as machine actuators and subsystems. The data from these sensors offer rich information about the consistency of the fabrication process within a build and across builds. This information may be used for process monitoring and defect detection; however, little has been done to leverage this data from the machines for more than just coarse-grained process monitoring. In this work we demonstrate how these inherently temporal data may be mapped spatially by leveraging scan path information. We then train a XGBoost machine learning model to predict localized defects—specifically soot–using only the mapped process data of builds from a laser powder bed fusion process as input features. The XGBoost model offers a feature importance metric that will help to elucidate possible relationships between the process data and observed defects. Finally, we analyze the model performance spatially and rationalize areas of greater and lesser performance.

3D printing↗
DOE OSTI2022

Towards Ab-Initio Simulations of Crystalline Defects at the Exascale Using Spectral Quadrature Density Functional Theory

Defects in crystalline solids play a crucial role in determining properties of materials at the nano, meso- and macroscales, such as the coalescence of vacancies at the nanoscale to form voids and prismatic dislocation loops or diffusion and segregation of solutes to nucleate precipitates, phase transitions in magnetic materials via disorder and doping. First principles Density Functional Theory (DFT) simulations can provide a detailed understanding of these phenomena. However, the number of atoms needed to correctly simulate these systems is often beyond the reach of many widely used DFT codes. The aim of this article is to discuss recent advances in first principles modeling of crystal defects using the spectral quadrature method. The spectral quadrature method is linear scaling with respect to the number of atoms, permits spatial coarse-graining, and is capable of simulating non-periodic systems embedded in a bulk environment, which allows the application of appropriate boundary conditions for simulations of crystalline defects. In this article, we discuss the state-of-the-art in ab-initio modeling of large metallic systems of the order of several thousand atoms that are suitable for utilizing exascale computing resourses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on the V-defect distribution, the electroluminescence properties, and the external quantum efficiency. Increasing the relative thickness of In in the InGaN/GaN superlattice and the total superlattice thickness correlate with a reduction of active region defects and increased external quantum efficiencies. The highest measured on-chip EQE was 0.15% and based on Monte-Carlo ray tracing simulations for light extraction we project this would correspond to a flip-chip EQE of ~2.5%.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented GaAs has the potential to reduce substrate costs for III-V epitaxy; however, it creates regularly faceted surfaces that may complicate the growth of high-quality III-V optoelectronic devices. We leverage the anisotropic growth rate of HVPE to planarize these faceted GaAs substrates, reducing the surface roughness and degree of faceting. We observe degraded solar cell performance and material quality in sample areas where facets are not completely removed. We used dark lock-in thermography and photoluminescence to identify recombination in areas that were not fully planarized. We used cathodoluminescence to identify the presence of extended defects in these regions, which are correlated with bandgap fluctuations in the material. We hypothesize that these defects were created by strain from compositional fluctuations in ternary alloys grown on the faceted surfaces. This work elucidates the potential issues of solar cells grown on faceted surfaces and builds understanding toward realizing high performance III-V photovoltaics with the cost-reduction potential of controlled spalling.

14 SOLAR ENERGY↗
NASA NTRS2003

Patterns of software defect data on spacecraft

The identification of patterns of software defect data yields insights into improving the quality of both operational and future spacecraft. This paper describes the results of applying this technique to both post-launch and pre-launch spacecraft. It then describes four key challenges that remain to achieving fuller utilization of defect analysis in future systems.

software defect defect analysis defect data↗
DOE OSTI2018

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Abstract Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current‐retention dilemma of cation‐based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure‐defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current‐retention dilemma will instruct the future implementation of high‐density 3D integration of RS memory immune to crosstalk issues.

Zhao, Xiaolong↗
DOE OSTI2018

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Lastly, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites is increased locally by orders of magnitude. Here, local acceptor and donor doping in Er(Mn,Ti)O3 is demonstrated, facilitated by the controlled splitting of anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, it is shown that the oxygen defects can readily be moved through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. These findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

He, Jiali↗
DOE OSTI2018

Pristine or Highly Defective? Understanding the Role of Graphene Structure for Stable Lithium Metal Plating

The role of graphene host structure/chemistry in plating–stripping in lithium metal anodes employed for lithium metal batteries is first examined in this study. Structural and chemical defects are bad, since highly defective graphene promotes unstable solid electrolyte interphase (SEI) growth. This consumes the fluoroethylene carbonate (FEC) additive in the carbonate electrolyte and is correlated with rapid decay in Coulombic efficiency (CE) and formation of filament-like Li dendrites. A unique flow-aided sonication exfoliation method is employed to synthesize “defect-free” graphene (df-G), allowing for a direct performance comparison with conventional reduced graphene oxide (r-GO). At cycle 1, the r-GO is better electrochemically wetted by Li than df-G, indicating that initially it is more lithiophilic. With cycling, the nucleation overpotential with r-GO becomes higher than with df-G, indicating less facile plating reactions. The df-G yields state-of-the-art electrochemical performance, with the post cycled metal surface being relatively smooth and dendrite-free. Conversely, r-GO templates have CE rapidly degrade from the onset, with extensive dendrites after cycling. Severe SEI growth and associated FEC depletion with r-GO are further confirmed by electrochemical impedance analysis and surface science methods. Finally, a new design rule is provided for Li metal templates: An ideal host must be noncatalytic toward SEI formation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Blue Light Emitting Defective Nanocrystals Composed of Earth‐Abundant Elements

Abstract Copper‐based ternary (I–III–VI) chalcogenide nanocrystals (NCs) are compositionally‐flexible semiconductors that do not contain lead (Pb) or cadmium (Cd). Cu‐In‐S NCs are the dominantly studied member of this important materials class and have been reported to contain optically‐active defect states. However, there are minimal reports of In‐free compositions that exhibit efficient photoluminescence (PL). Here, we report a novel solution‐phase synthesis of ≈4 nm defective nanocrystals (DNCs) composed of copper, aluminum, zinc, and sulfur with ≈20 % quantum yield and an attractive PL maximum of 450 nm. Extensive spectroscopic characterization suggests the presence of highly localized electronic states resulting in reasonably fast PL decays (≈1 ns), large vibrational energy spacing, small Stokes shift, and temperature‐independent PL linewidth and PL lifetime (between room temperature and ≈5 K). Furthermore, density functional theory (DFT) calculations suggest PL transitions arise from defects within a CuAl 5 S 8 crystal lattice, which supports the experimental observation of highly‐localized states. The results reported here provide a new material with unique optoelectronic characteristics that is an important analog to well‐explored Cu‐In‐S NCs.

Hansen, Eric C.↗
DOE OSTI2020

Refractive Imaging of Air Shock Above Microscale Defects in Pentaerythritol Tetranitrate (PETN) Films

Physical vapor deposition (PVD) of high explosives can produce energetic samples with unique microstructure and morphology compared to traditional powder processing techniques, but challenges may exist in fabricating explosive films without defects. Deposition conditions and substrate material may promote microcracking and other defects in the explosive films. Here, we investigate effects of engineered microscale defects (gaps) on detonation propagation and failure for pentaerythritol tetranitrate (PETN) films using ultra-high-speed refractive imaging and hydrocode modelling. Observations of the air shock above the gap reveal significant instabilities during gap crossing and re-ignition.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Exact correlators on the Wilson loop in $$ \mathcal{N}=4 $$ SYM: localization, defect CFT, and integrability

We compute a set of correlation functions of operator insertions on the 1/8 BPS Wilson loop in N=4 SYM by employing supersymmetric localization, OPE and the Gram-Schmidt orthogonalization. These correlators exhibit a simple determinant structure, are position-independent and form a topological subsector, but depend nontrivially on the ’t Hooft coupling and the rank of the gauge group. When applied to the 1/2 BPS circular (or straight) Wilson loop, our results provide an infinite family of exact defect CFT data, including the structure constants of protected defect primaries of arbitrary length inserted on the loop. At strong coupling, we show precise agreement with a direct calculation using perturbation theory around the AdS 2 string worldsheet. We also explain the connection of our results to the “generalized Bremsstrahlung functions” previously computed from integrability techniques, reproducing the known results in the planar limit as well as obtaining their finite N generalization. Furthermore, we show that the correlators at large N can be recast as simple integrals of products of polynomials (known as Q-functions) that appear in the Quantum Spectral Curve approach. This suggests an interesting interplay between localization, defect CFT and integrability.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗