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1,535 records · Page 86

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO 2 -Based Neuromorphic Devices

In order to make neuromorphic functions in memristive devices more efficient, information about the structural properties of filament formation at the micro- and mesoscopic scales is necessary. Despite extensive research on VO 2 , a key material due to its filament formation, local operando structural measurements remain challenging and often involve destructive specimen preparation and long rastering times, greatly limiting the scope of experimental studies. Utilizing dark-field X-ray microscopy (DFXM), a fullfield imaging modality, structural signatures of the filament formation process operando are revealed in VO 2 devices. DFXM experiments illustrate that rutile filaments contain isolated monoclinic clusters, indicating structural nonuniformity interior to the filament. The formation of the rutile phase beneath device electrodes was shown to precede filament development, followed by the formation of filament paths guided by nucleation sites within the device. Finally, a medium-term (<30 min) memory mechanism is observed in VO 2 , mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.↗

Postfault Operation of Three-Level Inverter Driven Six-Phase PMSM With Enhanced Torque–Speed Region

This article presents an open-switch postfault operational technique with enhanced torque–speed region for three-level (3L) active neutral point clamped (ANPC) inverter-driven symmetrical six-phase (SSP) permanent magnet synchronous machines (PMSMs). Maximum torque (MT), minimum loss (ML), and single three-phase (STP) operations are commonly used for the postfault operations of six-phase drives. The maximum possible torque and speed in these operations are generally limited by voltage, current ratings, and the neutral point configuration of the motor. To enhance the postfault torque and speed operating region, the torque and speed limits in different postfault operational techniques are determined based on the voltage, current constraints, and neutral point configuration of the SSP-PMSM. In this work, a unified postfault operation is proposed that increases the postfault operational limits by combining MT, ML, and STP operations and modifying the neutral point configuration of the SSP-PMSM. In addition, a technique is also presented that modifies the pulsewidth modulation technique to enable full torque operation below 0.5 p.u. speed. The proposed postfault operational technique enables full-speed (1 p.u.) operation by operating in STP mode and full torque operation (1 p.u.) below 0.5 p.u. speed. Furthermore, the postfault operational technique is experimentally validated using a Gallium Nitride (GaN) device-based3L-ANPC inverter-driven SSP-PMSM.

42 ENGINEERING↗

Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory

Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of V⁢O𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in V⁢O 𝑥 further support the thermodynamic coexistence of multiple V⁢O 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.

Electrical conductivity↗

Definition of Capabilities Needed for a Single Event Effects Test Facility

The Federal Aviation Administration (FAA) is contemplating new regulations mandating testing of the vulnerability of flight-critical avionics to single event effects (SEE). A limited number of high-energy neutron test facilities currently serve the SEE industrial and institutional research community. The FAA recognizes that existing facilities have insufficient test capacity to meet new demand from such mandates; it desires more flexible irradiation capabilities to test complete, large systems and would like capabilities to address greater concerns for thermal neutrons. For this reason, the FAA funded this study by Spallation Neutron Source (SNS) staff with the ultimate aim of developing options for SEE test facilities using high-energy neutrons at the SNS complex. After an investigation of current SEE test practices and assessment of future testing requirements, three concepts were identified covering a range of test functionality, neutron flux levels, and fidelity to the atmospheric neutron spectrum. The costs and times required to complete each facility were also estimated. SEE testing is generally performed by accelerating the event rate to a point where the effects are still dominated by single events and double event causes of failures are negligible. In practice, acceleration factors of as high as 10 6 are applicable for component testing, whereas for systems testing acceleration factors of 10 4 seem to be the upper limit. It is strongly desirable that the irradiation facility be tunable over a large range of high-energy neutron fluxes of 10 2 - 10 4 n/cm²/s for systems testing and from 10 4 - 10 7 n/cm²/s for components testing. The most capable, most flexible, and highest-test-capacity option is a new stand-alone target station named the High-Energy neutron Test Station (HETS). It is also the most expensive option, with a cost to complete of approximately $100 million. Dual test enclosures would allow for simultaneous testing activity effectively doubling overall test capacity per HETS operating hour. Using about 1 kilowatt (kW) of proton power extracted from the accelerator before injection in the accumulator ring, its operation would be unnoticeable by neutron scattering users at the SNS target station. The H beam laser stripping technique would allow for control of beam power on the HETS target independent from power delivered to the SNS. Large systems with frontal areas of up to 1 x 2 m² could be accommodated with integral high-energy flux values (above 10 megaelectron-volt, or MeV) to at most 10 4 n/cm²/s; components could also be tested with flux levels to at most 10 7 n/cm²/s on beam sizes of up to 0.2 x 0.2 m². Selectable moderating material and neutron filters would allow tailoring of the neutron spectrum to user demands; charged particle deflectors could be switched to allow or deflect protons, pions, and muons. It is estimated that HETS would take 5 years to complete after award of contract, including engineering design and construction. Commissioning would take at least another 6 months. Interference with SNS principal operations was not considered in the construction time estimate; connection of the proton transport line and tunnel from the accelerator high energy beam transport (HEBT) and construction around existing site utilities would require careful planning and coordination with beam operations at the SNS. A high-energy (HE) neutron test facility using an available beam line on the SNS target station is a technically and financially attractive option. Inspired by the new ChipIR instrument on the ISIS TS 2 spallation source in the UK, a similar facility could be placed on an unused beam line in the SNS instrument hall [e.g., on beam line 8 (both A and B channels would be needed) or on beam line 10]. The performance would approach that of an HETS (~80%), but it would be operationally more limited, with only a single user at a time. Space is more limited, so the maximum system size would be about half of that in an HETS. Flexibility to tailor the spectrum would be somewhat more limited. While this concept was not as fully developed and characterized, preliminary work indicates very high HE flux levels should be possible, with ample thermal neutrons as well. Flux control would be more difficult than at HETS because proton power on target be whatever the SNS was operating at for neutron scattering. Neutron attenuation devices would have to be employed with as-yet undetermined control resolution. However, no new buildings would be needed, and the necessary utilities are already present in the SNS Experiment Hall. The estimated cost for a beam line option is around $15 million; the time to complete would be 3 years after award of contract, plus at least 6 months for commissioning. Interference of construction activities with SNS operations should be negligible. This option would require negotiation with the Department of Energy Basic Energy Sciences (BES) office -- the primary stakeholder of SNS -- for an application outside the usual scope of neutron scattering sciences. Furthermore, these presently open beam lines are highly desirable locations for proposed neutron scattering instruments and obtaining one of them for an SEE test facility will come only with persuasive and timely arguments to SNS leadership and the DOE BES. The third option is a tunnel extension/target cave facility providing the most basic system-level irradiation capability with minimal flexibility. Again not as well developed a concept as HETS, it would use a laser-stripping technique like an HETS, redirecting protons to a tunnel similar to the initial HETS proton transport tunnel. Indeed, this concept is intended to be upgradable to a full HETS facility. Only a small fraction of a watt of proton power would be used in this basic configuration, though. An uncooled target and primitive shielding arrangement would provide beam on modestly sized systems that must be placed in close proximity to the target. The neutron fluence would be less uniform over the system than with the HETS or the beam line option. A data acquisition room and support area would be located on the ground level; access to the target cave would be via elevator and/or stairway. As a result of the required excavation, new tunnel construction, shielding, data acquisition building, utilities, and other items, the estimated cost is $30 million. The time to complete is expected be more than 3 years; here again construction interference with SNS operations has not been accounted for, but it could have a significant impact.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗