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At least 1,549 records · Page 86

Scanning He+ Ion Beam Microscopy and Metrology

The CD-SEM has been the tool of choice for the imaging and metrology of semiconductor devices for the past three decades but now, with critical dimensions at the nanometer scale, electron beam instruments can no longer deliver adequate performance. A scanning microscope using a He+ ion beam offers superior resolution and depth of field, and provides enhanced imaging contrast. Device metrology performed using ion beam imaging produces data which is comparable to or better than that from a conventional CD-SEM although there are significant differences in the experimental conditions required and in the details of image formation. The charging generated by a He+ beam, and the sample damage that it can cause, require care in operation but are not major problems.

36 MATERIALS SCIENCE↗

Refined tip preparation by electrochemical etching and ultrahigh vacuum treatment to obtain atomically sharp tips for scanning tunneling microscope and atomic force microscope

A modification of the common electrochemical etching setup is presented. The described method reproducibly yields sharp tungsten tips for usage in the scanning tunneling microscope and tuning fork atomic force microscope. In situ treatment under ultrahigh vacuum (p {<=}10{sup -10} mbar) conditions for cleaning and fine sharpening with minimal blunting is described. The structure of the microscopic apex of these tips is atomically resolved with field ion microscopy and cross checked with field emission.

36 MATERIALS SCIENCE↗

Scanning tunneling microscopic studies of laser-induced modifications of Si(001)-(2 x 1) surface

Scanning tunneling microscopic studies of Si(001)-2 x 1 surfaces excited with 532-nm laser pulses of intensities below melting and ablation thresholds have revealed two different modes of structural modifications, strongly depending on the intensity of laser lights. The excitation below 100 mJ/cm{sup 2} causes bond rupture at individual dimer-sites leading to the formation of vacancies selectively on the outermost layer. The bond rupture, which shows a strongly site-sensitive rate, forms efficiently vacancy-strings elongated along the surface dimer-rows. Selective removal of surface dimers results in the exposure of flat and defect-less underlying layer as reported previously, which is resistive to the excitation at this range of intensity. At intensities above 100 mJ/cm{sup 2}, on the other hand, the excitation forms not only vacancies but also ad-dimers on terraces. The number density of ad-dimers is in proportion to the square of that for vacancies, indicating strongly that silicon atoms released by laser-induced bond rupture are associated with each other to form ad-dimers. The repeated irradiations at this range of intensities induce anisotropic growth of ad-dimer islands and of vacancy clusters on terrace regions, leading to multiply terraced structure. The primary processes of the structural modifications are discussed based on the quantitative analyses of the growth of vacancy and ad-dimer under excitation.

36 MATERIALS SCIENCE↗

Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Neel temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.

36 MATERIALS SCIENCE↗

Note: A scanning electron microscope sample holder for bidirectional characterization of atomic force microscope probe tips

A novel sample holder that enables atomic force microscopy (AFM) tips to be mounted inside a scanning electron microscopy (SEM) for the purpose of characterizing the AFM tips is described. The holder provides quick and easy handling of tips by using a spring clip to hold them in place. The holder can accommodate two tips simultaneously in two perpendicular orientations, allowing both top and side view imaging of the tips by the SEM.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

36 MATERIALS SCIENCE↗

Scanning secondary-electron microscopy on ferroelectric domains and domain walls in YMnO{sub 3}

Ferroelectric domain structures in YMnO{sub 3} single crystals on the hexagonal polar surface have been investigated by scanning electron microscopy in secondary electron emission mode. The experimental results demonstrate that the domain, as well as domain walls, can be clearly revealed under the operation voltages ranging from 0.6 to 3 kV. Evolution of domain contrasts arising from electron-beam irradiation can be mainly explained by the pyroelectric effect and related charging process. A rich variety of microstructure features of ferroelectric domains can be clearly revealed in YMnO{sub 3} by this high-resolution technique.

36 MATERIALS SCIENCE↗

Sub-0.1 nm-resolution quantitative scanning transmission electron microscopy without adjustable parameters

Atomic-resolution imaging in the scanning transmission electron microscope (STEM) constitutes a powerful tool for nanostructure characterization. Here, we demonstrate the quantitative interpretation of atomic-resolution high-angle annular dark-field (ADF) STEM images using an approach that does not rely on adjustable parameters. We measure independently the instrumental parameters that affect sub-0.1 nm-resolution ADF images, quantify their individual and collective contributions to the image intensity, and show that knowledge of these parameters enables a quantitative interpretation of the absolute intensity and contrast across all accessible spatial frequencies. The analysis also provides a method for the in-situ measurement of the STEM's effective source distribution.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Correlating whisker growth and grain structure on Sn-Cu samples by real-time scanning electron microscopy and backscattering diffraction characterization

Whiskers/hillocks grow out of Pb-free Sn coatings used in electronics manufacturing. To determine which grains form whiskers/hillocks, we use scanning electron microscopy and backscattering diffraction to simultaneously monitor the surface morphology and grain structure. To reduce surface roughness, we developed a ''peel-off'' method to prepare ultra-flat samples that were measured repeatedly while whiskers/hillocks formed. We find grains that form into whiskers/hillocks are present in the as-deposited film (i.e., not re-nucleated) and many have horizontal grain boundaries beneath them. Grain rotation during whisker/hillock formation means that measurements performed after the features grow do not indicate their initial grain orientations.

36 MATERIALS SCIENCE↗

Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes

We demonstrate x-ray scanning coherent diffraction microscopy (ptychography) with 10 nm spatial resolution, clearly exceeding the resolution limits of conventional hard x-ray microscopy. The spatial resolution in a ptychogram is shown to depend on the shape (structure factor) of a feature and can vary for different features in the object. In addition, the resolution and contrast are shown to increase with increasing coherent fluence. For an optimal ptychographic x-ray microscope, this implies a source with highest possible brilliance and an x-ray optic with a large numerical aperture to generate the optimal probe beam.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study

We report on molecular beam epitaxy growth of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}. In situ scanning tunneling microscopy/spectroscopy shows that Bi growth mode changes from quasi bilayer-by-bilayer to step-flow with increasing substrate temperature. Bilayer Bi(111) exhibits an electron donor behavior, causing an 80 meV downshift of the Dirac point of Bi{sub 2}Te{sub 3}. Local work function difference between the bilayer films and Bi{sub 2}Te{sub 3} films is measured to be 390 meV. Based on the observations, we propose a schematic energy-band diagram which reveals band bending effect at the Bi/Bi{sub 2}Te{sub 3} interface. Our work paves a way to explore the exotic topological properties of bilayer islands and thin films of Bi.

36 MATERIALS SCIENCE↗

In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy

Using our new in situ high resolution scanning electron microscope, which is integrated into the UNILAC ion beamline at the Helmholtzzentrum fuer Schwerionenforschung (GSI) in Darmstadt, Germany, we investigated the swift heavy ion induced dewetting of a thin iron oxide layer on Si. Besides heterogeneous hole nucleation at defects and spontaneous (homogeneous) hole nucleation, we could clearly identify a dewetting mechanism, which is similar to the spinodal dewetting observed for liquid films. Instead of being due to capillary waves, it is based on a stress induced surface instability. The latter results in the formation of a wavy surface with constant dominant wave-length and increasing amplitude during ion irradiation. Dewetting sets in as soon as the wave-troughs reach the film-substrate interface. Inspection of the hole radii and rim shapes indicates that removal of the material from the hole area occurs mainly by plastic deformation at the inner boundary and ion induced viscous flow in the peripheral zone due to surface tension.

36 MATERIALS SCIENCE↗

End station for nanoscale magnetic materials study: Combination of scanning tunneling microscopy and soft X-ray magnetic circular dichroism spectroscopy

We have constructed an end station for nanoscale magnetic materials study at the soft X-ray beamline HiSOR BL-14 at Hiroshima Synchrotron Radiation Center. An ultrahigh-vacuum scanning tunneling microscope (STM) was installed for an in situ characterization of nanoscale magnetic materials in combination with soft X-ray magnetic circular dichroism (XMCD) spectroscopy experiment. The STM was connected to the XMCD experimental station via damper bellows to isolate it from environmental vibrations, thus achieving efficient spatial resolution for observing Si(111) surface at atomic resolution. We performed an in situ experiment with STM and XMCD spectroscopy on Co nanoclusters on an Au(111) surface and explored its practical application to investigate magnetic properties for well-characterized nanoscale magnetic materials.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Effect of residual chips on the material removal process of the bulk metallic glass studied by in situ scratch testing inside the scanning electron microscope

Research on material removal mechanism is meaningful for precision and ultra-precision manufacturing. In this paper, a novel scratch device was proposed by integrating the parasitic motion principle linear actuator. The device has a compact structure and it can be installed on the stage of the scanning electron microscope (SEM) to carry out in situ scratch testing. Effect of residual chips on the material removal process of the bulk metallic glass (BMG) was studied by in situ scratch testing inside the SEM. The whole removal process of the BMG during the scratch was captured in real time. Formation and growth of lamellar chips on the rake face of the Cube-Corner indenter were observed dynamically. Experimental results indicate that when lots of chips are accumulated on the rake face of the indenter and obstruct forward flow of materials, materials will flow laterally and downward to find new location and direction for formation of new chips. Due to similar material removal processes, in situ scratch testing is potential to be a powerful research tool for studying material removal mechanism of single point diamond turning, single grit grinding, mechanical polishing and grating fabrication.

36 MATERIALS SCIENCE↗

Three-dimensional imaging of copper pillars using x-ray tomography within a scanning electron microscope: A simulation study based on synchrotron data

While microelectronic devices are frequently characterized with surface-sensitive techniques having nanometer resolution, interconnections used in 3D integration require 3D imaging with high penetration depth and deep sub-micrometer spatial resolution. X-ray tomography is well adapted to this situation. In this context, the purpose of this study is to assess a versatile and turn-key tomographic system allowing for 3D x-ray nanotomography of copper pillars. The tomography tool uses the thin electron beam of a scanning electron microscope (SEM) to provoke x-ray emission from specific metallic targets. Then, radiographs are recorded while the sample rotates in a conventional cone beam tomography scheme that ends up with 3D reconstructions of the pillar. Starting from copper pillars data, collected at the European Synchrotron Radiation Facility, we build a 3D numerical model of a copper pillar, paying particular attention to intermetallics. This model is then used to simulate physical radiographs of the pillar using the geometry of the SEM-hosted x-ray tomography system. Eventually, data are reconstructed and it is shown that the system makes it possible the quantification of 3D intermetallics volume in copper pillars. The paper also includes a prospective discussion about resolution issues.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.

36 MATERIALS SCIENCE↗

Elevated temperature, nano-mechanical testing in situ in the scanning electron microscope

A general nano-mechanical test platform capable of performing variable temperature and variable strain rate testing in situ in the scanning electron microscope is described. A variety of test geometries are possible in combination with focused ion beam machining or other fabrication techniques: indentation, micro-compression, cantilever bending, and scratch testing. The system is intrinsically displacement-controlled, which allows it to function directly as a micro-scale thermomechanical test frame. Stable, elevated temperature indentation/micro-compression requires the indenter tip and the sample to be in thermal equilibrium to prevent thermal displacement drift due to thermal expansion. This is achieved through independent heating and temperature monitoring of both the indenter tip and sample. Furthermore, the apex temperature of the indenter tip is calibrated, which allows it to act as a referenced surface temperature probe during contact. A full description of the system is provided, and the effects of indenter geometry and of radiation on imaging conditions are discussed. The stabilization time and temperature distribution throughout the system as a function of temperature is characterized. The advantages of temperature monitoring and thermal calibration of the indenter tip are illustrated, which include the possibility of local thermal conductivity measurement. Finally, validation results using nanoindentation on fused silica and micro-compression of <100> silicon micro-pillars as a function of temperature up to 500 Degree-Sign C are presented, and procedures and considerations taken for these measurements are discussed. A brittle to ductile transition from fracture to splitting then plastic deformation is directly observed in the SEM for silicon as a function of temperature.

36 MATERIALS SCIENCE↗